1457 results about "Celsius Degree" patented technology

Embodiments of the present invention generally provide deposition processes for a silicon-containing dielectric layer using an improved microwave-assisted CVD chamber. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power of about 500 milliWatts / cm2 to about 5,000 milliWatts / cm2 at a frequency of about 1 GHz to about 10 GHz.

Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.

A method of filling a feature in a substrate with tungsten without forming a seam is presented. The tungsten is deposited by a thermal chemical vapor deposition (CVD) process using hydrogen (H2) and tungsten hexafluoride (WF6) precursor gases. The H2 to WF6 flow rate ratio is greater than 40 to 1, such as from 40 to 1 to 100 to 1. The substrate temperature during deposition is less than 300 degrees Celsius (° C.) and the processing pressure during deposition is greater than 300 Torr.

An assembly for protecting biological tissue from the effects of heating. The assembly contains a conductor in contact with the biological tissue and forming an electrical circuit comprising the biological tissue. The assembly contains a device for modifying the impedance of the electrical circuit such that, at a frequency of from about 10 megahertz to about 150 megahertz, such impedance is at least about 0.5 ohms per centimeter of length of said conductor. The assembly also contains a device for limiting the flow of current through the biological tissue such that, when the assembly is exposed to an alternating current electromagnetic field at a frequency of 64 megahertz and a magnetic field strength of 1.5 Tesla for 15 minutes, the temperature of the biological tissue does not exceed 42 degrees Celsius.

A catheter includes a cryoablation tip with an electrically-driven ablation assembly for heating tissue. The cryoablation tip may be implemented with a cooling chamber through which a controllably injected coolant circulates to lower the tip temperature, and having an RF electrode at its distal end. The RF electrode may be operated to warm cryogenically-cooled tissue, or the coolant may be controlled to conductively cool the tissue in coordination with an RF treatment regimen, allowing greater versatility of operation and enhancing the lesion size, speed or placement of multi-lesion treatment or single lesion re-treatment cycles. In one embodiment a microwave energy source operates at a frequency to extend beyond the thermal conduction depth, or to penetrate the cryogenic ice ball and be absorbed in tissue beyond an ice boundary, thus extending the depth and / or width of a single treatment locus. In another embodiment, the cooling and the application of RF energy are both controlled to position the ablation region away from the surface contacted by the electrode, for example to leave surface tissue unharmed while ablating at depth or to provide an ablation band of greater uniformity with increasing depth. The driver or RF energy source may supply microwave energy at a frequency effective to penetrate the ice ball which develops on a cryocatheter, and different frequencies may be selected for preferential absorption in a layer of defined thickness at depth in the nearby tissue. The catheter may operate between 70 and minus 70 degrees Celsius for different tissue applications, such as angioplasty, cardiac ablation and tissue remodeling, and may preset the temperature of the tip or adjacent tissue, and otherwise overlay or delay the two different profiles to tailor the shape or position where ablation occurs or to speed up a treatment cycle.

Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature that is less than 300 degrees Celsius is disclosed. The precursors for the remote plasma CVD process include tris(dimethylamino)silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS) or hexamethylcyclotrisilazane (HMCTZ).

The present invention relates to film layers and compositions having improved hot tack properties. The compositions comprise at least one ethylene / α-olefin interpolymer, wherein the ethylene / α-olefin interpolymer may have, for example, a Mw / Mn from about 1.7 to about 3.5, at least one melting point, Tm, in degrees Celsius, and a density, d, in grams / cubic centimeter, wherein the numerical values of Tm and d correspond to the relationship:Tm>−2002.9+4538.5(d)−2422.2(d)2.

A power system adapted for supplying power in a high temperature environment is disclosed. The power system includes a rechargeable energy storage that is operable in a temperature range of between about seventy degrees Celsius and about two hundred and fifty degrees Celsius coupled to a circuit for at least one of supplying power from the energy storage and charging the energy storage; wherein the energy storage is configured to store between about one one hundredth (0.01) of a joule and about one hundred megajoules of energy, and to provide peak power of between about one one hundredth (0.01) of a watt and about one hundred megawatts, for at least two charge-discharge cycles. Methods of use and fabrication are provided. Embodiments of additional features of the power supply are included.

A combined cycle system includes, a pre-steam-methane-reformer operating at a temperature of less than about 800 degrees Celsius to reform a mixed fuel stream to generate a first reformate stream, a water-gas-shift reactor to convert carbon monoxide in the first reformate stream to carbon dioxide and form a second reformate stream, a carbon dioxide removal unit for removing carbon dioxide from the second reformate stream and form a carbon dioxide stream and a third reformate stream; wherein less than about 50 percent of the carbon contained in the mixed fuel stream is recovered as carbon dioxide by the removal unit, a gas turbine unit for generating power and an exhaust stream, and a steam generator unit configured to receive the exhaust stream, wherein the heat of the exhaust stream is transferred to a water stream to generate the steam for the mixed fuel stream and for a steam turbine.

The present invention pertains to methods for forming high quality thin interface oxide layers suitable for use with high-k gate dielectrics in the manufacture of semiconductor devices. An ambient that contains oxygen and a reducing agent is utilized to grow the layers. The oxygen facilitates growth of the layers, while the reducing agent simultaneously counteracts that growth. The rate of growth of the layers can thus be controlled by regulating the partial pressure of the reducing agent, which is the fraction of the reducing agent in the gas phase times the total pressure. Controlling and slowing the growth rate of the layers facilitates production of the layers to thicknesses of about 10 Angstroms or less at temperatures of about 850 degrees Celsius or more. Growing the layers at high temperatures facilitates better bonding and production of higher quality layers, which in turn yields better performing and more reliable resulting products.

Cosmetic method and apparatus are provided that can provide cooling and / or freezing of skin tissue proximal to the skin surface to generate an appearance of lightening or reduced pigmentation in the skin. The skin can be cooled to a temperature of less than about −5 degrees Celsius for a duration of about one minute or less, using a plurality of cooled contact surfaces, each having a width between about 2 mm and about 20 mm. A cooling arrangement can be provided to provide controlled heat removal from the skin tissue being treated. A sensor can optionally be provided to detect freezing of tissue proximal to the cooled surfaces.

A rechargeable lithium-selenium cell comprising a cathode having a cathode active material selected from Se or SexSy (x / y ratio=0.01 to 100), an anode having an anode active material, a porous separator electronically separating the anode and the cathode, a non-flammable quasi-solid electrolyte in contact with the cathode and the anode, wherein the electrolyte contains a lithium salt dissolved in a first organic liquid solvent with a lithium salt concentration sufficiently high (at least 2.0 M, more preferably >3.0 M) so that the electrolyte exhibits a vapor pressure less than 0.01 kPa when measured at 20° C., a flash point at least 20 degrees Celsius higher than the flash point of the first organic liquid solvent alone, a flash point higher than 150° C., or no flash point. This battery cell is non-flammable and safe, has a long cycle life, high capacity, and high energy density.