1464 results about "Celsius Degree" patented technology

Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.

Embodiments of the present invention generally provide deposition processes for a silicon-containing dielectric layer using an improved microwave-assisted CVD chamber. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power of about 500 milliWatts / cm2 to about 5,000 milliWatts / cm2 at a frequency of about 1 GHz to about 10 GHz.

The virtual intelligence shoe with a podiatric analysis system provided with a portable pair of shoe-like body types thereof, into two of which a miniature electronic module and an enclosed sensor mat are permanently embedded in the shoe-like with a mechanical air package enclosing the electronic module to serve as a shock absorption. A miniature electronic module comprises a transmitting circuit with pressure resistance, shoe temperature and warning buzzer for full memory capacity, which receives the variable pressure and temperature voltage signals, convert them into resistance (ohm) and Celsius, respectively. The electrical signals can be emitted in an infrared light signal. An enclosed sensor mat constitutes a thin, flexible, planar, resilient, and dielectric material that arrays seventy-four positions at strategic geometrical pattern to produce the precision of collecting data exerted by a foot or feet continuously and instantaneously in static and dynamic event during the full weight bearing in various activities. The conjunction of a pair of shoe-like body types, a digital foot scanner, a portable infrared light-receiving unit and a central integrator (servers) form a podiatric analysis system for enabling accurate information. An obtained information of each individual can be stored and analyzed for diagnostic means with respect to the foot or feet maladies. The virtual intelligence shoe with a podiatric analysis system is an unconventional, which can ultimately be used by anyone and capable to produce consistent foot or feet information to implement the changes in the foot or feet biomechanics by altering the shoes, orthoses or other modes. In a preferred form, a pair of shoe-like body types is virtually applied to any type of foot or feet maladies and worn daily as if they were conventional shoes under various terrain conditions.

A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V / III ratio in a range of from about 1 to about 105, nitrogen source material partial pressure in a range of from about 1 to about 103 torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 500 microns per hour. The III-V nitride homoepitaxial microelectronic device structures are usefully employed in device applications such as UV LEDs, high electron mobility transistors, and the like.

Atomic layer deposition is enhanced using plasma. Plasma begins prior to flowing a second precursor into a chamber. The second precursor reacts with a first precursor to deposit a layer on a substrate. The layer may include at least one element from each of the first and second precursors. The layer may be TaN, and the precursors may be TaF5 and NE3. The plasma may begin during purge gas flow between a pulse of the first precursor and a pulse of the second precursor. Thermal energy assists the reaction of the precursors to deposit the layer on the substrate. The thermal energy may be greater than generally accepted for ALD (e.g., more than 300 degrees Celsius).

Embodiments of the present invention generally relate to methods for forming a SiGe layer. In one embodiment, a seed SiGe layer is first formed using plasma enhanced chemical vapor deposition (PECVD), and a bulk SiGe layer is formed directly on the PECVD seed layer also using PECVD. The processing temperature for both seed and bulk SiGe layers is less than 450 degrees Celsius.

RF / MRI compatible leads include at least one conductor that turns back on itself at least twice in a lengthwise direction, and can turn back on itself at least twice at multiple locations along its length. The at least one electrical lead can be configured so that the lead heats local tissue less than about 10 degrees Celsius (typically about 5 degrees Celsius or less) or does not heat local tissue when a patient is exposed to target RF frequencies at a peak input SAR of at least about 4 W / kg and / or a whole body average SAR of at least about 2 W / kg. Related devices and methods of fabricating leads are also described.

Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.

A method of filling a feature in a substrate with tungsten without forming a seam is presented. The tungsten is deposited by a thermal chemical vapor deposition (CVD) process using hydrogen (H2) and tungsten hexafluoride (WF6) precursor gases. The H2 to WF6 flow rate ratio is greater than 40 to 1, such as from 40 to 1 to 100 to 1. The substrate temperature during deposition is less than 300 degrees Celsius (° C.) and the processing pressure during deposition is greater than 300 Torr.

An assembly for protecting biological tissue from the effects of heating. The assembly contains a conductor in contact with the biological tissue and forming an electrical circuit comprising the biological tissue. The assembly contains a device for modifying the impedance of the electrical circuit such that, at a frequency of from about 10 megahertz to about 150 megahertz, such impedance is at least about 0.5 ohms per centimeter of length of said conductor. The assembly also contains a device for limiting the flow of current through the biological tissue such that, when the assembly is exposed to an alternating current electromagnetic field at a frequency of 64 megahertz and a magnetic field strength of 1.5 Tesla for 15 minutes, the temperature of the biological tissue does not exceed 42 degrees Celsius.

A catheter includes a cryoablation tip with an electrically-driven ablation assembly for heating tissue. The cryoablation tip may be implemented with a cooling chamber through which a controllably injected coolant circulates to lower the tip temperature, and having an RF electrode at its distal end. The RF electrode may be operated to warm cryogenically-cooled tissue, or the coolant may be controlled to conductively cool the tissue in coordination with an RF treatment regimen, allowing greater versatility of operation and enhancing the lesion size, speed or placement of multi-lesion treatment or single lesion re-treatment cycles. In one embodiment a microwave energy source operates at a frequency to extend beyond the thermal conduction depth, or to penetrate the cryogenic ice ball and be absorbed in tissue beyond an ice boundary, thus extending the depth and / or width of a single treatment locus. In another embodiment, the cooling and the application of RF energy are both controlled to position the ablation region away from the surface contacted by the electrode, for example to leave surface tissue unharmed while ablating at depth or to provide an ablation band of greater uniformity with increasing depth. The driver or RF energy source may supply microwave energy at a frequency effective to penetrate the ice ball which develops on a cryocatheter, and different frequencies may be selected for preferential absorption in a layer of defined thickness at depth in the nearby tissue. The catheter may operate between 70 and minus 70 degrees Celsius for different tissue applications, such as angioplasty, cardiac ablation and tissue remodeling, and may preset the temperature of the tip or adjacent tissue, and otherwise overlay or delay the two different profiles to tailor the shape or position where ablation occurs or to speed up a treatment cycle.

Fabrication methods for capacitive-micromachined ultrasound transducers (“cMUT”) and cMUT imaging array systems are provided. cMUT devices fabricated from low process temperatures are also provided. In an exemplary embodiment, a process temperature can be less than approximately 300 degrees Celsius. A cMUT fabrication method generally comprises depositing and patterning materials on a substrate (400). The substrate (400) can be silicon, transparent, other materials. In an exemplary embodiment, multiple metal layers (405, 410, 415) can be deposited and patterned onto the substrate (400); several membrane layers (420, 435, 445) can be deposited over the multiple metal layers (405, 410, 415); and additional metal layers (425, 430) can be disposed within the several membrane layers (420, 435, 445). The second metal layer (410) is preferably resistant to etchants used to etch the third metal layer (415) when forming a cavity (447). Other embodiments are also claimed and described.

The present invention relates to film layers and compositions having improved hot tack properties. The compositions comprise at least one ethylene / α-olefin interpolymer, wherein the ethylene / α-olefin interpolymer may have, for example, a Mw / Mn from about 1.7 to about 3.5, at least one melting point, Tm, in degrees Celsius, and a density, d, in grams / cubic centimeter, wherein the numerical values of Tm and d correspond to the relationship: Tm>−2002.9+4538.5(d)−2422.2(d)2.

Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature that is less than 300 degrees Celsius is disclosed. The precursors for the remote plasma CVD process include tris(dimethylamino)silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS) or hexamethylcyclotrisilazane (HMCTZ).

A system and method for the formation of novel small particles, thin films, and coatings of solid state metal boride material. The metal boride materials may be formed using aerosol methods and / or spray pyrolysis to form a generally uniform, thin film coating of boride compound spheres. Boride solutions or compounds are sprayed via a gas nebulizer in a reactor containing a substrate and heated to approximately 900° Celsius. The boride compounds form uniform, spherical particles of approximately one micrometer in diameter. The boride compounds are extremely strong, non-reactive, dense, and, when prepared as films or coating, adhere very well to substrates, such as metals.

One disclosed embodiment of the present invention is a device comprising: a housing; electronic components contained within said housing; and a heat absorption medium sealed within said housing for regulating the temperature of said device, wherein said heat absorption medium undergoes a state change at a state change temperature of 36° Celsius or greater, and wherein said device is a medical implant.

A shoe sole is composed of particles of Ethylene Vinyl Acetate and the particles are connected with each other with gaps defined between the particles so as to form irregular surface of the shoe sole. The sole is made by filling the particles to 77% to 87% of volume of a cavity in a mold set, wherein an angle 40 to 50 degrees is clamped between a spinning axis of the cavity and an axis to which the mold set is rotated about. The mold set is then heated to 140 to 160 degrees Celsius and spins the mold set about the spinning axis 22 to 32 minutes. After cooling the mold set, the shoe sole is formed and is removed from the cavity.

The present invention provides systems and methods of forming an epitaxial film on a substrate. After heating in a process chamber, the substrate is exposed to a silicon source and at least one of SiH2(CH3)2, SiH(CH3)3, Si(CH3)4, 1,3-disilabutane, and C2H2, at a temperature of greater than about 250 degrees Celsius and a pressure greater than about 1 Torr so as to form an epitaxial film on at least a portion of the substrate. Then, the substrate is exposed to an etchant so as to etch the epitaxial film and any other films formed during the deposition. The deposition and etching may be repeated until a film of a desired thickness is achieved. Numerous other aspects are disclosed.

The present invention relates to film layers and compositions having improved hot tack properties. The compositions comprise at least one ethylene / α-olefin interpolymer, wherein the ethylene / α-olefin interpolymer may have, for example, a Mw / Mn from about 1.7 to about 3.5, at least one melting point, Tm, in degrees Celsius, and a density, d, in grams / cubic centimeter, wherein the numerical values of Tm and d correspond to the relationship:Tm>−2002.9+4538.5(d)−2422.2(d)2.

A power system adapted for supplying power in a high temperature environment is disclosed. The power system includes a rechargeable energy storage that is operable in a temperature range of between about seventy degrees Celsius and about two hundred and fifty degrees Celsius coupled to a circuit for at least one of supplying power from the energy storage and charging the energy storage; wherein the energy storage is configured to store between about one one hundredth (0.01) of a joule and about one hundred megajoules of energy, and to provide peak power of between about one one hundredth (0.01) of a watt and about one hundred megawatts, for at least two charge-discharge cycles. Methods of use and fabrication are provided. Embodiments of additional features of the power supply are included.

A combined cycle system includes, a pre-steam-methane-reformer operating at a temperature of less than about 800 degrees Celsius to reform a mixed fuel stream to generate a first reformate stream, a water-gas-shift reactor to convert carbon monoxide in the first reformate stream to carbon dioxide and form a second reformate stream, a carbon dioxide removal unit for removing carbon dioxide from the second reformate stream and form a carbon dioxide stream and a third reformate stream; wherein less than about 50 percent of the carbon contained in the mixed fuel stream is recovered as carbon dioxide by the removal unit, a gas turbine unit for generating power and an exhaust stream, and a steam generator unit configured to receive the exhaust stream, wherein the heat of the exhaust stream is transferred to a water stream to generate the steam for the mixed fuel stream and for a steam turbine.

The present invention pertains to methods for forming high quality thin interface oxide layers suitable for use with high-k gate dielectrics in the manufacture of semiconductor devices. An ambient that contains oxygen and a reducing agent is utilized to grow the layers. The oxygen facilitates growth of the layers, while the reducing agent simultaneously counteracts that growth. The rate of growth of the layers can thus be controlled by regulating the partial pressure of the reducing agent, which is the fraction of the reducing agent in the gas phase times the total pressure. Controlling and slowing the growth rate of the layers facilitates production of the layers to thicknesses of about 10 Angstroms or less at temperatures of about 850 degrees Celsius or more. Growing the layers at high temperatures facilitates better bonding and production of higher quality layers, which in turn yields better performing and more reliable resulting products.

Cosmetic method and apparatus are provided that can provide cooling and / or freezing of skin tissue proximal to the skin surface to generate an appearance of lightening or reduced pigmentation in the skin. The skin can be cooled to a temperature of less than about −5 degrees Celsius for a duration of about one minute or less, using a plurality of cooled contact surfaces, each having a width between about 2 mm and about 20 mm. A cooling arrangement can be provided to provide controlled heat removal from the skin tissue being treated. A sensor can optionally be provided to detect freezing of tissue proximal to the cooled surfaces.

A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer of improved epitaxial quality deposited on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on a corresponding III-V nitride material substrate, by depositing the III-V nitride homoepitaxial layer by a VPE process using Group III source material and nitrogen source material under process conditions including V / III ratio in a range of from about 1 to about 10<5>, nitrogen source material partial pressure in a range of from about 1 to about 10<3 >torr, growth temperature in a range of from about 500 to about 1250 degrees Celsius, and growth rate in a range of from about 0.1 to about 10<2 >microns per hour. The III-V nitride homoepitaxial microelectronic device structures are usefully employed in device applications such as UV LEDs, high electron mobility transistors, and the like.

A manufacturing method of modified hydrophilic Polyurethane memory foam and products thereof are disclosed. The starting material of the foam includes hydrophilic PU prepolymer, acrylic emulsion polymer and second polyether polyol. The hydrophilic PU prepolymer consists of a first polyether polyol and isocyanate. The molecular weight of the first polyether polyol ranges from 600 to 2000 and the first polyether polyol contains at least 40 mole % of -EO— where the content of the -EO— ranges from 20 to 99.9 wt %. The foaming agent is carbon dioxide produced by the reaction of isocyanate and the water. After foaming process, there is a heating step for dehydration. The foam has specific high hydrophilic polymer structure with features of shock absorbing, uniform pressure relief, moisture absorbency and heat absorbing so as to provide users dry and cool feelings. It wouldn't become rigid below 10 degrees Celsius.

A field emission device and method of forming a field emission device are provided in accordance with the present invention. The field emission device is comprised of a substrate (12) having a deformation temperature that is less than about six hundred and fifty degrees Celsius and a nano-supported catalyst (22) formed on the substrate (12) that has active catalytic particles that are less than about five hundred nanometers. The field emission device is also comprised of a nanotube (24) that is catalytically formed in situ on the nano-supported catalyst (22), which has a diameter that is less than about twenty nanometers.

This invention involves an electronic cigarette atomizer, including an oil-guiding element and a heating wire wound around the oil-guiding element; the oil-guiding element is a strip of fiber textile, which is derived from fibers via weaving and glue-removing processes. The invention further provides an electronic cigarette, including an atomizer, a nozzle at one end of the atomizer and a battery assembly at the other end thereof, the atomizer including the oil-guiding element and heating wire around it, the oil-guiding element being a strip of fiber textile, being derived from fibers via weaving and glue-removing process. The oil-guiding element of the invention is the strip of fiber textile via weaving and glue-putting process, the fibers are closely combined which effectively avoids loosened slim fibers inhaled into the human body, is more helpful to users' health; moreover the fiber textile has a heat-resistance up to 400 degrees Celsius, and better security.

A catheter includes a cryoablation tip with an electrically-driven ablation assembly for heating tissue. The cryoablation tip may be implemented with a cooling chamber through which a controllably injected coolant circulates to lower the tip temperature, and having an RF electrode at its distal end. The RF electrode may be operated to warm cryogenically-cooled tissue, or the coolant may be controlled to conductively cool the tissue in coordination with an RF treatment regimen, allowing greater versatility of operation and enhancing the lesion size, speed or placement of multi-lesion treatment or single lesion re-treatment cycles. In one embodiment a microwave energy source operates at a frequency to extend beyond the thermal conduction depth, or to penetrate the cryogenic ice ball and be absorbed in tissue beyond an ice boundary, thus extending the depth and / or width of a single treatment locus. In another embodiment, the cooling and the application of RF energy are both controlled to position the ablation region away from the surface contacted by the electrode, for example to leave surface tissue unharmed while ablating at depth or to provide an ablation band of greater uniformity with increasing depth. The driver or RF energy source may supply microwave energy at a frequency effective to penetrate the ice ball which develops on a cryocatheter, and different frequencies may be selected for preferential absorption in a layer of defined thickness at depth in the nearby tissue. The catheter may operate between 70 and minus 70 degrees Celsius for different tissue applications, such as angioplasty, cardiac ablation and tissue remodeling, and may preset the temperature of the tip or adjacent tissue, and otherwise overlay or delay the two different profiles to tailor the shape or position where ablation occurs or to speed up a treatment cycle.

A rechargeable lithium-selenium cell comprising a cathode having a cathode active material selected from Se or SexSy (x / y ratio=0.01 to 100), an anode having an anode active material, a porous separator electronically separating the anode and the cathode, a non-flammable quasi-solid electrolyte in contact with the cathode and the anode, wherein the electrolyte contains a lithium salt dissolved in a first organic liquid solvent with a lithium salt concentration sufficiently high (at least 2.0 M, more preferably >3.0 M) so that the electrolyte exhibits a vapor pressure less than 0.01 kPa when measured at 20° C., a flash point at least 20 degrees Celsius higher than the flash point of the first organic liquid solvent alone, a flash point higher than 150° C., or no flash point. This battery cell is non-flammable and safe, has a long cycle life, high capacity, and high energy density.

This invention discloses an inductor that includes a conducting wire composed of an alloy having temperature coefficients of resistance (TCR) approximately 0.0002 milliohm per Celsius degree or is lower. The inductive coil has a winding configuration provided for enclosure in a substantially rectangular box with a mid-plane extended along an elongated direction of the rectangular box wherein the conducting wire interesting at least twice near said mid-plane.