10373 results about "Amount of substance" patented technology

The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising at least first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate and wherein the third gaseous material is inert with respect to reacting with the first or second gaseous materials.

A small diameter flexible electrode designed for subcutaneous in vivo amperometric monitoring of glucose is described. The electrode is designed to allow “one-point” in vivo calibration, i.e., to have zero output current at zero glucose concentration, even in the presence of other electroreactive species of serum or blood. The electrode is preferably three or four-layered, with the layers serially deposited within a recess upon the tip of a polyamide insulated gold wire. A first glucose concentration-to-current transducing layer is overcoated with an electrically insulating and glucose flux limiting layer (second layer) on which, optionally, an immobilized interference-eliminating horseradish peroxidase based film is deposited (third layer). An outer (fourth) layer is biocompatible.

Disclosed are bioluminescent bioreporter integrated circuit devices that detect selected analytes in fluids when implanted in the body of an animal. The device comprises a bioreporter that has been genetically engineered to contain a nucleic acid segment that comprises a cis-activating response element that is responsive to the selected substance operably linked to a gene encoding a bioluminescent reporter polypeptide. In preferred embodiments, the target analyte is glucose, glucagons, or insulin. Exposure of the bioreporter to the target substance causes the response element to up-regulate the nucleic acid sequence encoding the reporter polypeptide to produce a luminescent response that is detected and quantitated. In illustrative embodiments, the bioreporter device is encapsulated on an integrated circuit that is capable of detecting the emitted light, processing the resultant signal, and then remotely reporting the results. Also disclosed are controlled drug delivery systems capable of being directly or indirectly controlled by the detection device that provide drugs such as insulin to the animal in reponse to the amount of target analyte present in the body fluids.

A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.

In one embodiment of the invention, a method of manufacturing a semiconductor device comprises the steps of: a) providing an organic semiconductor layer; b) depositing a reactive species on a portion of the organic semiconductor layer; and c) reacting the reactive species with the portion of the organic layer to form a dielectric layer.

Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O₂, and/or a halogen-containing gas, such as NF₃. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.

A silicon nitride film is formed on a substrate in a reaction chamber by introducing trisilane and a reactive nitrogen species into the chamber in separate pulses. A carbon precursor gas is also flowed into the chamber during introduction of the trisilane and/or during introduction of the reactive nitrogen species, or in pulses separate from the trisilane and reactive nitrogen species pulses. The carbon is used as a dopant in the silicon nitride film and advantageously allows a high stress silicon nitride film to be formed.

Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer overlying at least a portion of the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods may also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may also include removing the acidic vapor from the semiconductor processing chamber. Systems to deposit a silicon oxide layer on a substrate are also described.

Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical/ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.

Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH₃)₃—N.

A method for creating an organically capped Group IV semiconductor nanoparticle is disclosed. The method includes flowing a Group IV semiconductor precursor gas into a chamber. The method also includes generating a set of Group IV semiconductor precursor radical species from the Group IV semiconductor precursor gas with a laser pyrolysis apparatus, wherein the set of the Group IV semiconductor precursor radical species nucleate to form the Group IV semiconductor nanoparticle; and flowing an organic capping agent precursor gas into the chamber. The method further includes generating a set of organic capping agent radical species from the organic capping agent precursor gas, wherein the set of organic capping agent radical species reacts with a surface of the Group IV semiconductor nanoparticle and forms the organically capped Group IV semiconductor nanoparticle.

Techniques for cold implantation of carbon-containing species are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation including a cooling device for cooling a target material to a predetermined temperature, and an ion implanter for implanting the target material with a carbon-containing species at the predetermined temperature to improve at least one of strain and amorphization.

A class of biological sensing devices that include a substrate comprising an array of carbon nanotubes (CNTs) to which are chemically attached biological molecules is disclosed. The attached biological molecules are capable of electrical conductivity that is responsive to chemical changes occurring as a result of their interaction with target species. A means for means for using DNA as a material of potential in molecular electronic sensor devices, being primarily based on molecular electron-transfer reaction processes between DNA-binding donors and acceptors is also disclosed, including composition, method of manufacture and their use are described.

A system and method for providing intermediate reactive species to a reaction chamber are disclosed. The system includes an intermediate reactive species formation chamber fluidly coupled to the reaction chamber to provide intermediate reactive species to the reaction chamber. A pressure control device can be used to control an operating pressure of the intermediate reactive species formation chamber, and a heater can be used to heat the intermediate reactive species formation chamber to a desired temperature.

A method for etching a target layer on a substrate by a dry etching process includes at least one etching cycle, wherein an etching cycle includes: depositing a halogen-containing film using reactive species on the target layer on the substrate; and etching the halogen-containing film using a plasma of a non-halogen etching gas, which plasma alone does not substantially etch the target layer, to generate etchant species at a boundary region of the halogen-containing film and the target layer, thereby etching a portion of the target layer in the boundary region.

A method and apparatus are provided for the determination of levels of carotenoids and similar chemical compounds in biological tissue such as living skin. The method and apparatus provide a noninvasive, rapid, accurate, and safe determination of carotenoid levels which in turn can provide diagnostic information regarding cancer risk, or can be a marker for conditions where carotenoids or other antioxidant compounds may provide diagnostic information. Such early diagnostic information allows for the possibility of preventative intervention. The method and apparatus utilize the technique of resonance Raman spectroscopy to measure the levels of carotenoids and similar substances in tissue. In this technique, laser light is directed upon the area of tissue which is of interest. A small fraction of the scattered light is scattered inelastically, producing the carotenoid Raman signal which is at a different frequency than the incident laser light, and the Raman signal is collected, filtered, and measured. The resulting Raman signal can be analyzed such that the background fluorescence signal is subtracted and the results displayed and compared with known calibration standards.