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471 results about "Thin film semiconductors" patented technology
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Fused nanocrystal thin film semiconductor and method
A thin film semiconductor and a method of its fabrication use induced crystallization and aggregation of a nanocrystal seed layer to form a merged-domain layer. The nanocrystal seed layer is deposited onto a substrate surface within a defined boundary. A reaction temperature below a boiling point of a reaction solution is employed. A thin film metal-oxide transistor and a method of its production employ the thin film semiconductor as a channel of the transistor. The merged-domain layer exhibits high carrier mobility.
Owner:HEWLETT PACKARD DEV CO LP
Process for atomic layer deposition
ActiveUS20080182358A1Suitable for processingAllowed to operateAdditive manufacturing apparatusSemiconductor/solid-state device manufacturingZincAtomic layer deposition
The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising at least first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate and wherein the third gaseous material is inert with respect to reacting with the first or second gaseous materials.
Owner:EASTMAN KODAK CO
Electronic device, organic electroluminescence device, and organic thin film semiconductor device
InactiveUS20080106191A1Easy to manufactureImprove reliabilityCellsDischarge tube luminescnet screensSolid state electrolyteElectrolysis
An electronic device includes a substrate, a functional element formed on the substrate, an electrolytic element provided on at least one of a side of the substrate on which the functional element is formed and a side of the substrate opposite to the side on which the functional element is formed, configured including a solid-state electrolyte layer and a pair of electrodes for holding the solid-state electrolyte layer in between, and capable of applying electrolysis to water, and a sealing member for sealing the functional element and the electrolytic element.
Owner:SEIKO EPSON CORP
Electro-optical device and method for manufacturing the same
InactiveUS7115902B1High carrier mobilityDegree of improvementSolid-state devicesSemiconductor devicesLiquid-crystal displaySemiconductor chip
An electro-optical device and a method for manufacturing the same are disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided thereon a plurality of gate wires, a plurality of source (drain) wires, and a pixel matrix comprising thin film transistors, and a second substrate facing the first substrate, wherein, among the peripheral circuits having established on the first substrate and being connected to the matrix wirings for the X direction and the Y direction, only a part of said peripheral circuits is constructed from thin film semiconductor devices fabricated by the same process utilized for an active device, and the rest of the peripheral circuits is constructed from semiconductor chips. The liquid crystal display device according to the present invention is characterized by that the peripheral circuits are not wholly fabricated into thin film transistors, but only those portions having a simple device structure, or those composed of a small number of devices, or those comprising an IC not easily available commercially, or those comprising an expensive integrated circuit, are fabricated by thin film transistors. According to the present invention, an electro-optical device is provided at an increased production yield with a reduced production cost.
Owner:SEMICON ENERGY LAB CO LTD
Thin film semiconductor device and fabrication method therefor
InactiveUS7488980B2Restraining aspect ratioSmall sizeTransistorSemiconductor/solid-state device detailsInsulation layerEngineering
A relaying pad is formed in a predetermined portion in an insulation layer of the single-crystal thin film device, in a region where the single-crystal thin film device is formed. The relaying pad is for providing connection wiring through the insulator substrate. With this configuration it is possible to prevent an increase in an aspect ratio of a contact hole formed in an insulation layer in a region in which a transferred device is formed, the semiconductor device including a substrate on which the transferred device and a deposited device coexist.
Owner:SHARP KK
Electro-optical device
InactiveUS7067844B2High carrier mobilityDegree of improvementTransistorStatic indicating devicesLiquid-crystal displaySemiconductor chip
An electro-optical device is disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer) having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided thereon a plurality of gate wires, a plurality of source (drain) wires, and a pixel matrix comprising thin film transistors, and a second substrate facing the first substrate, wherein, among the peripheral circuits having established on the first substrate and being connected to the matrix wiring for the X direction and the Y direction, only a part of said peripheral circuits is constructed from thin film semiconductor devices fabricated by the same process utilized for an active device, and the rest of the peripheral circuits are constructed from semiconductor chips. The liquid crystal display device according to the present invention is characterized in that the peripheral circuits are not wholly fabricated into thin film transistors, but only those portions having a simple device structure, or those composed of a small number of devices, or those comprising an IC not easily available commercially, or those comprising an expensive integrated circuit, are fabricated by thin film transistors. According to the present invention, an electro-optical device is provided at an increased production yield with a reduced production cost.
Owner:SEMICON ENERGY LAB CO LTD
Oxynitride laminate "blocking layer" for thin film semiconductor devices
Channel doping is an effective method for controlling Vth, but if Vth shifts to the order of -4 to -3 V when forming circuits such as a CMOS circuit formed from both an n-channel TFT and a P-channel TFT on the same substrate, then it is difficult to control the Vth of both TFTs with one channel dope. In order to solve the above problem, the present invention forms a blocking layer on the back channel side, which is a laminate of a silicon oxynitride film (A) manufactured from SiH4, NH3, and N2O, and a silicon oxynitride film (B)manufactured from SiH4and N2O. By making this silicon oxynitride film laminate structure, contamination by alkaline metallic elements from the substrate can be prevented, and influence by stresses, caused by internal stress, imparted to the TFT can be relieved.
Owner:SEMICON ENERGY LAB CO LTD
Precursor ink for producing IB-IIIA-VIA semiconductors
InactiveUS20090260670A1Overcome disadvantagesFinal product manufacturePV power plantsIndiumSemiconductor thin films
Copper indium diselenide, copper indium gallium diselenide, and other IB-IIIA-VIA compounds are produced by the liquid deposition on a substrate of a precursor-containing ink, followed by heating to produce the desired material. The precursor containing ink is a mixture of three parts. The first part is plurality of particulates of metal compounds of IB, IIIA. The second part is chalcogen source of selenium, sulfur, or organic chalcogen compounds dissolved in a liquid organic solvent. The third part solution function as viscosity adjustment, as introduction of dopant of sodium ion and / or as ink stabilizer. The precursor ink can be coated on substrate at room temperature and it can be transferred into copper indium (gallium) chalcogenide semiconductor thin film upon baking and a chalcogenization process. The resulting thin film semiconducting material can be incorporated into photovoltaic and other electronic devices.
Owner:LI XIAO CHANG CHARLES
IC card
InactiveUS20050045729A1FunctionalLow costSemiconductor/solid-state device detailsSolid-state devicesElectricityDisplay device
The present invention provides an IC card that can realize high function without increasing the size of an IC chip, and that can realize cost reduction. The IC card comprises a first single crystal integrated circuit, a second integrated circuit, and a display device. The second integrated circuit and the display device are each formed from a thin film semiconductor film, over a plastic substrate, and the first single crystal integrated circuit is mounted on the plastic substrate so as to be electrically connected to the second integrated circuit.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and manufacturing method thereof
InactiveUS20050130389A1Less shieldingAvoid signal attenuationTransistorLine/current collector detailsDevice materialIntegrated circuit
A semiconductor device typified by a wireless tag, which has improved mechanical strength, can be formed by a more simple process at a low cost and prevent radio waves from being shielded, and a manufacturing method of the semiconductor device. According to the invention, a wireless tag includes a thin film integrated circuit formed of an isolated TFT having a thin film semiconductor film. The wireless tag may be attached directly to an object, or attached to a flexible support such as plastic and paper before being attached to an object. The wireless tag of the invention may include an antenna as well as the thin film integrated circuit. The antenna allows to communicate signals between a reader / writer and the thin film integrated circuit, and to supply a power source voltage from the reader / writer to the thin film integrated circuit.
Owner:SEMICON ENERGY LAB CO LTD
Thin film transistor
InactiveUS6849872B1Intuitive effectInhibit deteriorationTransistorSolid-state devicesNitrideSemiconductor device
An improved type thin film semiconductor device and a method for forming the same are described. That is, in a thin film semiconductor device such as TFT formed on an insulating substrate, it is possible to prevent the intrusion of a mobile ion from a substrate or other parts, by forming the first blocking film comprising a silicon nitride, an aluminum oxide, an aluminum nitride, a tantalum oxide, and the like, under the semiconductor device through an insulating film used in a buffering, and then, by forming the second blocking film on TFT, and further, by covering TFT with the first and second blocking films.
Owner:SEMICON ENERGY LAB CO LTD
Thin-film semiconductor device and method of manufacturing the same
InactiveUS20050202595A1Efficient separationImprove featuresSemiconductor/solid-state device detailsSolid-state devicesDevice materialPhysical chemistry
A thin-film semiconductor device with a reduced influence on a device formation layer in separation and a method of manufacturing the device are provided. The manufacturing method includes the step of preparing a member having a semiconductor film with a semiconductor element and / or semiconductor integrated circuit on a separation layer, the separation step of separating the member at the separation layer by a pressure of a fluid, and the chip forming step of, after the separation step, forming the semiconductor film into chips.
Owner:CANON KK
Introducing catalytic and gettering elements with a single mask when manufacturing a thin film semiconductor device
InactiveUS6348368B1TransistorSemiconductor/solid-state device manufacturingAbnormal growthsDevice material
In a method of manufacturing a semiconductor device, after a lateral growth region 107 is formed by using a catalytic element 105 for facilitating crystallization of silicon, the catalytic element is gettered into a phosphorus added region 108 by a heat treatment. Thereafter, a gate insulating film 113 is formed to cover active layers 110 to 112 formed, and in this state, a thermal oxidation step is carried out. By this, the characteristics of an interface between the active layers and the gate insulating film can be improved while abnormal growth of a metal oxide is prevented.
Owner:SEMICON ENERGY LAB CO LTD
Electro-optical device and method for manufacturing the same
InactiveUS20070018165A1High carrier mobilityDegree of improvementSolid-state devicesNon-linear opticsLiquid-crystal displaySemiconductor chip
An electro-optical device and a method for manufacturing the same are disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided thereon a plurality of gate wires, a plurality of source (drain) wires, and a pixel matrix comprising thin film transistors, and a second substrate facing the first substrate, wherein, among the peripheral circuits having established on the first substrate and being connected to the matrix wirings for the X direction and the Y direction, only a part of said peripheral circuits is constructed from thin film semiconductor devices fabricated by the same process utilized for an active device, and the rest of the peripheral circuits is constructed from semiconductor chips. The liquid crystal display device according to the present invention is characterized by that the peripheral circuits are not wholly fabricated into thin film transistors, but only those portions having a simple device structure, or those composed of a small number of devices, or those comprising an IC not easily available commercially, or those comprising an expensive integrated circuit, are fabricated by thin film transistors. According to the present invention, an electro-optical device is provided at an increased production yield with a reduced production cost.
Owner:SEMICON ENERGY LAB CO LTD
Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same
The present invention is related to a thin film semiconductor which can be regarded as substantially a single crystal and a semiconductor device comprising an active layer formed by the thin film semiconductor. At least a concave or convex pattern is formed intentionally on a insulating film provided in contact with the lower surface of an amorphous silicon film, whereby at least a site is formed in which a metal element for accelerating crystallization can be segregated. Therefore, a crystal nuclei is selectively formed in a portion where the concave or convex pattern is located, which carries out controlling a crystal diameter. Thus, a crystalline silicon film is obtained. A crystallinity of the crystalline silicon film is improved by the irradiation of a laser light or an intense light having an energy equivalent to that of the laser light, whereby a monodomain region in which no grain boundary substantially exit is formed.
Owner:SEMICON ENERGY LAB CO LTD
Thin film solar cell
InactiveUS20080078444A1Good choiceImprovement factorPhotovoltaic energy generationSemiconductor devicesHigh energyUltraviolet
Optimal structures for high efficiency thin film silicon solar energy conversion devices and systems are disclosed. Thin film silicon active layer photoelectron conversion structures using ion implantation are disclosed. Thin film semiconductor devices optimized for exploiting the high energy and ultraviolet portion of the solar spectrum at the earths surface are also disclosed. Solar cell fabrication using high oxygen concentration single crystal silicon substrates formed using in preference the CZ method are used advantageously. Furthermore, the present invention discloses optical coatings for advantageous coupling of solar radiation into thin film solar cell devices via the use of rare-earth metal oxide (REOx), rare-earth metal oxynitride (REOxNy) and rare-earth metal oxy-phosphide (REOxPy) glasses and or crystalline material. The rare-earth metal is chosen from the group commonly known in the periodic table of elements as the lanthanide series.
Owner:IQE
Method for making thin-film semiconductors based on I-III-VI2 compounds, for photovoltaic applications
InactiveUS7026258B2Final product manufactureSemiconductor/solid-state device manufacturingElectrochemistryChemical measurement
The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe2; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.
Owner:ELECTRICITE DE FRANCE +1
Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus
InactiveUS20020119609A1Reduce in quantityQuality improvementTransistorFrom solid stateElectrical conductorCrystal orientation
In an MIS field effect transistor having a gate electrode formed on a first semiconductor layer which is a polycrystalline silicon film on an insulating substrate through a gate insulating film, a channel region formed in the semiconductor layer and a source region and a drain region arranged on both sides of the channel region, a thin film semiconductor device has a main orientation of at least the channel region of {110} with respect to the surface of the gate insulating film. Further, a polycrystalline semiconductor film having a main orientation of the surface almost perpendicular to a direction for connecting the source and drain regions of {100} is preferably used in the channel of a semiconductor device. According to the present invention, a semiconductor device having a high-quality polycrystalline semiconductor film whose grain boundary, grain size and crystal orientation can be controlled and whose film roughness and crystal defects formed by crystallization have been reduced can be obtained on the insulating substrate.
Owner:PANASONIC LIQUID CRYSTAL DISPLAY CO LTD +1
Photovoltaic device and manufacturing method thereof
InactiveUS20050109388A1Increase costLow costFinal product manufacturePhotovoltaic energy generationProduction ratePolycrystalline silicon
There is provided a photovoltaic device in which at least one pin-junction is formed in a thin film semiconductor deposited on a substrate, the substrate including: a base including polycrystalline silicon; and a polycrystalline silicon layer formed on the base by liquid phase growth, in which at least a part of a surface of the polycrystalline silicon layer has unevenness composed of facet surfaces. The photovoltaic device prevents a reduction in photoelectric conversion efficiency due to the absence of preferable unevenness, an increase in cost due to the use of an expensive material, and a reduction in throughput in the photovoltaic device, and has a preferable characteristic and high productivity.
Owner:CANON KK
Process for making doped zinc oxide
ActiveUS20090081826A1Suitable for processingAllowed to operateAdditive manufacturing apparatusConductive materialIndiumZinc
The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate, wherein the third gaseous material is inert and wherein a volatile indium-containing compound is introduced into the first reactive gaseous material or a supplemental gaseous material.
Owner:EASTMAN KODAK CO
Thin film semiconductor device and method for producing the same
Owner:SEIKO EPSON CORP
Substrate release methods and apparatuses
InactiveUS20100022074A1Reduce harmMinimize complexitySemiconductor/solid-state device manufacturingSemiconductor devicesPorous semiconductorsCrystalline semiconductor
The present disclosure relates to methods and apparatuses for fracturing or breaking a buried porous semiconductor layer to separate a 3-D thin-film semiconductor semiconductor (TFSS) substrate from a 3-D crystalline semiconductor template. The method involves forming a sacrificial porous semiconductor layer on the 3-D features of the template. A variety of techniques may be used to fracture and release the mechanically weak porous semiconductor layer without damaging the TFSS substrate layer or the template layer such as pressure variations, thermal stress generation, and mechanical bending. The methods also allow for processing three dimensional features not possible with current separation processes. Optional cleaning and final lift-off steps may be performed as part of the release step or after the release step.
Owner:BEAMREACH SOLAR INC
Electro-optical device which comprises thin film transistors and method for manufacturing the same
InactiveUS7576360B2High yieldSolid-state devicesNon-linear opticsLiquid-crystal displaySemiconductor chip
Owner:SEMICON ENERGY LAB CO LTD
Flexible substrate with electronic devices and traces
InactiveUS7977170B2Improved laminationSolid-state devicesSemiconductor/solid-state device manufacturingPlastic materialsMetallic coating
A method of manufacturing an electronic device (10) provides a substrate (20) that has a plastic material and has a metallic coating on one surface. A portion of the metallic coating is etched to form a patterned metallic coating. A particulate material (16) is embedded in at least one surface of the substrate. A layer of thin-film semiconductor material is deposited onto the substrate (20).
Owner:EASTMAN KODAK CO
Thin Film Semi-Conductor-on-Glass Solar Cell Devices
InactiveUS20080308143A1Inhibit transport and deleterious actionLower performance requirementsSemiconductor/solid-state device manufacturingPhotovoltaic energy generationAlkali ionsRare earth
The present invention relates to semiconductor devices suitable for electronic, optoelectronic and energy conversion applications. In a particular form, the present invention relates to the fabrication of a thin film solar cells and thin film transistors through the advantageous combination of semiconductors, insulators, rare-earth based compounds and amorphous and / or ceramic and / or glass substrates. Crystalline or polycrystalline thin film semiconductor-on-glass formation using alkali ion impurity barrier layer(s) are disclosed. Example embodiment of crystalline or polycrystalline thin film semiconductor-on-glass formation using rare-earth based material as impurity barrier layer(s) is disclosed. In particular, thin film silicon-on-glass substrate is disclosed as the alternate embodiment, with impurity barrier designed to inhibit transport of deleterious alkali species from the glass into the semiconductor thin film.
Owner:IQE
Fused nanocrystal thin film semiconductor and method
A thin film semiconductor and a method of its fabrication use induced crystallization and aggregation of a nanocrystal seed layer to form a merged-domain layer. The nanocrystal seed layer is deposited onto a substrate surface within a defined boundary. A reaction temperature below a boiling point of a reaction solution is employed. A thin film metal-oxide transistor and a method of its production employ the thin film semiconductor as a channel of the transistor. The merged-domain layer exhibits high carrier mobility.
Owner:HEWLETT PACKARD DEV CO LP
Thin-film semiconductor device and method of manufacturing the same
InactiveUS7029950B2Improve featuresEfficient separationSemiconductor/solid-state device detailsSolid-state devicesIntegrated circuitSemiconductor device
A thin-film semiconductor device with a reduced influence on a device formation layer in separation and a method of manufacturing the device are provided. The manufacturing method includes the step of preparing a member having a semiconductor film with a semiconductor element and / or semiconductor integrated circuit on a separation layer, the separation step of separating the member at the separation layer by a pressure of a fluid, and the chip forming step of, after the separation step, forming the semiconductor film into chips.
Owner:CANON KK
Semiconductor radio frequency switch with body contact
ActiveUS8723260B1Improve balanceImprove linearityTransistorSolid-state devicesCapacitanceReverse body bias
The present disclosure relates to a radio frequency (RF) switch that includes multiple body-contacted field effect transistor (FET) elements coupled in series. The FET elements may be formed using a thin-film semiconductor device layer, which is part of a thin-film semiconductor die. Conduction paths between the FET elements through the thin-film semiconductor device layer and through a substrate of the thin-film semiconductor die may be substantially eliminated by using insulating materials. Elimination of the conduction paths allows an RF signal across the RF switch to be divided across the series coupled FET elements, such that each FET element is subjected to only a portion of the RF signal. Further, each FET element is body-contacted and may receive reverse body biasing when the RF switch is in an OFF state, thereby reducing an OFF state drain-to-source capacitance of each FET element.
Owner:QORVO US INC
Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing
InactiveUS20100300518A1Eliminate and reduce disadvantageEliminate and reduce and problemFinal product manufactureSemiconductor/solid-state device manufacturingOptoelectronicsPorous semiconductors
A method for the fabrication of a three-dimensional thin-film semiconductor substrate with selective through-holes is provided. A porous semiconductor layer is conformally formed on a semiconductor template comprising a plurality of three-dimensional inverted pyramidal surface features defined by top surface areas aligned along a (100) crystallographic orientation plane of the semiconductor template and a plurality of inverted pyramidal cavities defined by sidewalls aligned along the (111) crystallographic orientation plane of the semiconductor template. An epitaxial semiconductor layer is conformally formed on the porous semiconductor layer. The epitaxial semiconductor layer is released from the semiconductor template. Through-holes are selectively formed in the epitaxial semiconductor layer with openings between the front and back lateral surface planes of the epitaxial semiconductor layer to form a partially transparent three-dimensional thin-film semiconductor substrate.
Owner:BEAMREACH SOLAR INC
Glass ceramic and method of producing the same
ActiveUS20050096208A1High surface precisionThickness variationTransistorGlass tempering apparatusSolar cellGlass-ceramic
A glass ceramic comprises (in wt.-% on oxide basis): SiO2 35 to 60, B2O3>4 to 10, P2O5 0 to 10, Al2O3 16.5 to 40, TiO2 1 to 10, Ta2O5 0 to 8, Y2O3 0 to 6, ZrO21 to 10, MgO 6 to 20, CaO 0 to 10, SrO 0 to 4, BaO 0 to 8, ZnO 0 to 4, SnO2+CeO2 0 to 4, SO42−+Cl− 0 to 4, wherein the total content (SnO2+CeO2+S042−+Cl−) is between 0.01 and 4 wt.-%. The glass ceramic may be processed by the float glass method, may be transparent and is, inter alia, suitable as a substrate for thin film semiconductors, in particular for display applications, solar cells etc.
Owner:SCHOTT AG
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