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6970980 results about "Engineering" patented technology

Engineering is the use of scientific principles to design and build machines, structures, and other items, including bridges, tunnels, roads, vehicles, and buildings. The discipline of engineering encompasses a broad range of more specialized fields of engineering, each with a more specific emphasis on particular areas of applied mathematics, applied science, and types of application. See glossary of engineering.

Pixel structure of active matrix organic light-emitting diode and method for fabricating the same

A pixel structure of an active matrix organic light-emitting diode (AMOLED) includes an organic light-emitting diode (OLED), a data line, at least one scan line, at least one switch thin film transistor (TFT), at least one driving TFT and at least one storage capacitor with two transparent electrodes. Since both the electrodes of the transparent storage capacitor are formed by transparent material, the aperture ratio of the pixel and the area of the capacitor largely increase and can reach 50%˜95% of a pixel area. Thus, the display quality of an AMOLED panel can be improved.
Owner:IND TECH RES INST

Oxide semiconductor thin film transistor and method of manufacturing the same

Provided is a thin film transistor comprising a channel layer comprised of an oxide semiconductor containing In, M, Zn, and O, M including at least one selected from the group consisting of Ga, Al, and Fe. The channel layer is covered with a protective film.
Owner:CANON KK

Surgical instrument having an articulating end effector

An articulating surgical instrument is shown, which comprises a shaft and an end effector. The shaft has a longitudinal axis, and the end effector is operationally coupled, preferably mechanically coupled, to the shaft at an articulation pivot. The instrument also comprises a first band, and in some embodiments, a second band, each operationally connected to the end effector and extending through at least a portion of the shaft. An articulation control applies a force in a direction substantially transverse to the longitudinal axis, wherein the force, when applied in one direction, is translated through the first band to the end effector to effect rotation of the end effector relative to the shaft about the articulation pivot in a first rotational direction, and when the force is applied in the opposite direction, is translated through the second band to the end effector to effect rotation of the end effector relative to the shaft about the articulation pivot in a second rotational direction.
Owner:ETHICON ENDO SURGERY INC

Indium oxide-based thin film transistors and circuits

In electronic displays or imaging units, the control of pixels is achieved by an array of transistors. These transistors are in a thin film form and arranged in a two-dimensional configuration to form switching circuits, driving circuits or even read-out circuits. In this invention, thin film transistors and circuits with indium oxide-based channel layers are provided. These thin film transistors and circuits may be fabricated at low temperatures on various substrates and with high charge carrier mobilities. In addition to conventional rigid substrates, the present thin film transistors and circuits are particularly suited for the fabrication on flexible and transparent substrates for electronic display and imaging applications. Methods for the fabrication of the thin film transistors with indium oxide-based channels are provided.
Owner:SHIH YI CHI +3

Semiconductor apparatus and method of manufacturing the same

It is an object of the present invention to provide a technology of controlling a threshold voltage of a thin film transistor in which an amorphous oxide film is applied to a channel layer. There is provided a semiconductor apparatus including a plurality of kinds of transistors, each of the plurality of kinds of transistors including a channel layer made of an amorphous oxide containing a plurality of kinds of metal elements; and threshold voltages of the plurality of kinds of transistors are different from one another by changing an element ratio of the amorphous oxide.
Owner:CANON KK

Organic electroluminescent display device and manufacturing method thereof

The present invention provides an organic EL display device having a planarizing layer, which is prevented from being distorted. The above organic EL display device has a planarizing layer, which retains 5% or less the oligomer used to form this layer.
Owner:CANON KK

Thin film transistor, method of manufacturing the same, and flat panel display having the same

A thin film transistor (TFT), a method of manufacturing the TFT, and a flat panel display comprising the TFT are provided. The TFT includes a gate, a gate insulating layer that contacts the gate, a channel layer that contacts the gate insulating layer and faces the gate with the gate insulating layer therebetween, a source that contacts an end of the channel layer; and a drain that contacts an other end of the channel layer, wherein the channel layer is an amorphous oxide semiconductor layer, and each of the source and the drain is a conductive oxide layer comprising an oxide semiconductor layer having a conductive impurity in the oxide semiconductor layer. A low resistance metal layer can further be included on the source and drain. A driving circuit of a unit pixel of a flat panel display includes the TFT.
Owner:SAMSUNG ELECTRONICS CO LTD

Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor

Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.
Owner:SAMSUNG ELECTRONICS CO LTD

Semiconductor device and method for manufacturing the same, and electric device

It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique is used to form a wiring in a contact hole having a comparatively long diameter, the wiring in accordance with the shape of the contact hole is formed, and the wiring portion of the contact hole is likely to have a depression compared with other portions. A penetrating opening is formed by irradiating a light-transmitting insulating film with laser light having high intensity and a pulse high in repetition frequency. A plurality of openings having a minute contact area is provided instead of forming one penetrating opening having a large contact area to have an even thickness of a wiring by reducing a partial depression and also to ensure contact resistance.
Owner:SEMICON ENERGY LAB CO LTD

Semiconductor device and display device

When a signal inputted to a pixel is erased by setting potentials of a gate terminal and a source terminal of a driving transistor to be equal, a current slightly flows through the driving transistor in some cases, which leads to occur a display defect. The invention provides a display device which improves the yield while suppressing the increase in manufacturing cost. When a potential of a scan line for erasure is raised, a potential of the gate terminal of the driving transistor is raised accordingly. For example, the scan line and the gate terminal of the driving transistor are connected through a rectifying element.
Owner:SEMICON ENERGY LAB CO LTD

Color el display and method for producing the same

One embodiment of the present invention is a color EL display characterized in that at least color filters, a thin film transistor circuit, an organic EL layer, and a common electrode are laminated in this order on a transparent substrate. Another embodiment of the invention is a method for producing a color EL display comprising the steps of forming color filters or a transparent substrate; forming a thin film transistor circuit; forming an organic EL layer; and forming a common electrode, wherein process temperatures of the steps of forming the thin film transistor circuit and subsequent steps are 200° C. or less.
Owner:TOPPAN PRINTING CO LTD

Semiconductor device, electronic device, and method of manufacturing semiconductor device

To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.
Owner:SEMICON ENERGY LAB CO LTD

Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications

A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate insulator includes room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage.
Owner:MASSACHUSETTS INST OF TECH

ZnO thin film transistor and method of forming the same

A zinc oxide (ZnO) thin film transistor (TFT) and method of forming the same are provided. The ZnO may include a ZnO semiconductor channel, a conductive ZnO gate forming an electric field around the ZnO semiconductor channel, an ZnO gate insulator interposed between the conductive ZnO gate and the ZnO semiconductor channel and an insulating ZnO passivation layer on the ZnO semiconductor channel, the conductive ZnO gate and the ZnO gate insulator to protect the ZnO semiconductor channel, the conductive ZnO gate, and the ZnO gate insulator. A thin film transistor (TFT) may be formed by forming a semiconductor channel, forming a conductive gate having an electric field around the semiconductor channel, forming a gate insulator between the conductive gate and the semiconductor channel, and forming an insulating passivation layer on the semiconductor channel, the conductive gate and the gate insulator.
Owner:SAMSUNG ELECTRONICS CO LTD

Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer

A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.
Owner:CANON KK

Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof

A method of manufacturing a transmission type liquid crystal display is disclosed including preparing a color filter; forming a substantially transparent semiconductor circuit on a surface of the color filter while position adjustment between the color filter and the semiconductor circuit is performed; and forming a transmission type liquid crystal display element on one side of the substantially transparent semiconductor circuit, wherein there is no color filter on the one side.
Owner:TOPPAN PRINTING CO LTD

Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby

A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300° C. during fabrication.
Owner:EASTMAN KODAK CO

Surgical stapling instrument incorporating an E-beam firing mechanism

A surgical severing and stapling instrument clamps, suitable for laparoscopic and endoscopic clinical procedures, clamps tissue within an end effector of an elongate channel pivotally opposed by an anvil. An E-beam firing bar moves distally through the clamped end effector to sever tissue and to drive staples on each side of the cut. The E-beam firing bar affirmatively spaces the spaces the anvil from the elongate channel to assure properly formed closed staples, especially when an amount of tissue is clamped that is inadequate to space the end effector. In particular, an upper pin of the firing bar longitudinally moves through an anvil slot and a channel clot is captured between a lower cap and a middle pin of the firing bar to assure a minimum spacing.
Owner:CILAG GMBH INT

Articulating surgical stapling instrument incorporating a two-piece E-beam firing mechanism

A surgical severing and stapling instrument, suitable for laparoscopic and endoscopic clinical procedures, clamps tissue within an end effector of an elongate channel pivotally opposed by an anvil. An E-beam firing bar moves distally through the clamped end effector to sever tissue and to drive staples on each side of the cut. The E-beam firing bar affirmatively spaces the anvil from the elongate channel to assure properly formed closed staples, especially when an amount of tissue is clamped that is inadequate to space the end effector. In particular, an upper pin of the firing bar longitudinally moves through an anvil slot and a channel slot is captured between a lower cap and a middle pin of the firing bar to assure a minimum spacing. Forming the E-beam from a thickened distal portion and a thinned proximal strip enhances manufacturability and facilitates use in such articulating surgical instruments.
Owner:ETHICON ENDO SURGERY INC +1

Mode-based graphical user interfaces for touch sensitive input devices

A user interface method is disclosed. The method includes detecting a touch and then determining a user interface mode when a touch is detected. The method further includes activating one or more GUI elements based on the user interface mode and in response to the detected touch.
Owner:APPLE INC

Surgical stapling instrument having a spent cartridge lockout

A surgical instrument for laparoscopic and endoscopic clinical procedures simultaneously severs and staples tissue clamped in an end effector comprising an elongate channel, which holds a staple cartridge, and a pivotally attached anvil. An E-beam firing bar engages the channel and selectively engages the anvil during distal firing movements, wherein the tissue is severed and stapled driven upward from the staple cartridge to form against the anvil. In particular, a wedge integral to the staple cartridge is driven distally by a middle pin of the firing bar to effect stapling. A lockout mechanism of the staple cartridge responds to the presence of the wedge sled in its unfired position to allow the firing bar to fire. Otherwise, the lockout mechanism prevents firing when the staple cartridge is spent.
Owner:CILAG GMBH INTERNATIONAL

Surgical instrument with a lateral-moving articulation control

InactiveUS6981628B2Complicate amountComplicate directionSuture equipmentsStapling toolsEngineeringTarsal Joint
An articulating surgical instrument suited for endoscopic use includes a lateral articulation control into a handle portion that provides an intuitive visual and tactile indication to the clinician as to the amount and direction of articulation of an end effector at a distal end of a shaft. Lateral movement of a lateral control actuator is converted into a longitudinal motion or a rotational motion transferred by the shaft to an articulation mechanism. A version of a lateral articulation control for a rotationally driven articulation mechanism incorporates an articulation backdrive lockout that prevents forces on the end effector from causing the selected amount of articulation from being changed.
Owner:CILAG GMBH INT

Surgical stapling instrument having a firing lockout for an unclosed anvil

A surgical instrument for laparoscopic and endoscopic clinical procedures simultaneously severs and staples tissue clamped in an end effector comprising an elongate channel, which holds a staple cartridge, and a pivotally attached anvil. An E-beam firing bar engages the channel and selectively engages the anvil during distal firing movements, wherein the tissue is severed and stapled driven upward from the staple cartridge to form against the anvil. In particular an upper pin of the firing bar is disengaged from the anvil before firing. A ramped transition from an anvil to an anvil slot avoids misfiring when the end effector has clamped too much tissue, yet assists in successfully clamping a slightly excess amount of tissue.
Owner:CILAG GMBH INT

Surgical stapler

InactiveUS6032849AFacilitates convenient removalEasy to engageSuture equipmentsStapling toolsPERITONEOSCOPEEngineering
A surgical device is described herein that can be used to fire different types and sizes of disposable loading units. In a preferred embodiment, the device applies parallel rows of surgical fasteners to body tissue and concomitantly forms an incision between the rows of staples during an endoscopic or laparoscopic surgical procedure. The device can be utilized with disposable loading units configured to apply linear rows of staples measuring from about 15 mm in length to about 60 mm in length and can be used to fire disposable loading units containing surgical clips and individual staples.
Owner:TYCO HEALTHCARE GRP LP
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