490results about How to "Uniform characteristics" patented technology

A gas supply mechanism includes a gas introduction member having gas inlet portions through which a gas is introduced into a processing chamber, a processing gas supply unit, a processing gas supply path, branch paths, an additional gas supply unit and an additional gas supply path. The gas inlet portions includes inner gas inlet portions for supplying the gas toward a region where a target substrate is positioned in the chamber and an outer gas inlet portion for introducing the gas toward a region outside an outermost periphery of the target substrate. The branch paths are connected to the inner gas inlet portions, and the additional gas supply path is connected to the outer gas inlet portion.

Field emission display and method for fabricating the same, the field emission display including a cathode array having a cathode electrode formed on a substrate, insulating layers and carbon nanotube films for use as emitter electrodes formed alternately on the cathode electrode, and a gate electrode formed on the insulating layer, thereby permitting fabrication of a large sized cathode plate at a low cost because the film is formed by screen printing and exposure, which can reduce the cumbersome steps in fabrication of the related art Spindt emitter tip, and both a low voltage and a high voltage FEDs because the carbon nanotube film used as the emitter has a low work function, with an easy and stable electron emission capability.

Thin film transistors including an oxide semiconductor containing indium, gallium, and zinc are easily arranged in a matrix over a large substrate and have small characteristic variations. With amplifier circuits and driver circuits of display elements which include the thin film transistors including an oxide semiconductor containing indium, gallium, and zinc with small characteristic variations, intensity distribution of light received by the photodiodes arranged in a matrix is converted into electrical signals with high reproducibility and output, and the display elements arranged in a matrix can be uniformly driven.

A finFET-based non-volatile memory device on a semiconductor substrate includes source and drain regions, a fin body, a charge trapping stack and a gate. The fin body extends between the source and the drain region as a connection. The charge trapping stack covers a portion of the fin body and the gate covers the charge trapping stack at the location of the fin body. The fin body has a corner-free shape for at least ¾ of the circumference of the fin body which lacks distinct crystal faces and transition zones in between the crystal faces.

A system, method, and apparatus for ultrasonic detection of flaws or defects in oil field tubulars utilizing composite transducers. An array of composite transducers are utilized to detect anomalies in the tubulars, such as transverse, wall or longitudinal defects. The use of the composite transducers allow for a greater inspection area over traditional transducers thereby reducing the number of channels needed for inspection of the tubulars.

PCT No. PCT / EP98 / 02965 Sec. 371 Date Jan. 14, 1999 Sec. 102(e) Date Jan. 14, 1999 PCT Filed May 20, 1998 PCT Pub. No. WO98 / 52879 PCT Pub. Date Nov. 26, 1998An object of the present invention is to provide a synthetic silica glass optical material which exhibits excellent transmittance as well as durability for high output power vacuum ultraviolet rays, being emitted from, for example, ArF excimer lasers and Xe2 excimer lamps, and to provide a method for producing the same. A synthetic silica glass optical material for high output power vacuum ultraviolet rays made from ultra high purity synthetic silica glass for use in the wavelength region of from 165 to 195 nm, containing OH groups at a concentration of from 5 to 300 wtppm with a fluctuation width in OH group concentration ( DELTA OH / cm) of 10 wtppm or less, containing hydrogen molecules at a concentration of from 1x1017 to 1x1019 molecule / cm3 with a fluctuation width in hydrogen molecule concentration ( DELTA H2 / cm) of 1x1017 molecule / cm3 or lower, and containing chlorine at a concentration of 50 wtppm or lower. Also claimed is a method for producing the same.

A FET exhibiting excellent uniformity and productivity and having a low noise figure and high associated gain as high-frequency performance, a semiconductor chip having this FET and a semiconductor device having the semiconductor chip. The FET includes a GaAs substrate on which are built up an i-type GaAs layer, an i-type InGaAs two-dimensional electron gas layer and an n-type AlGaAs electron supply layer. A gate electrode is provided on and in linear Schottky contact with the n-type AlGaAs electron supply layer. A n-type InGaP etching stop layer and then an n-type GaAs contact layer at the same lateral position are built up on the n-type AlGaAs electron supply layer, these being spaced away from both sides of the gate electrode. A source electrode and a drain electrode are provided on the n-type GaAs contact layer and are spaced away from edges of the contact layer as electrodes that make band-shaped ohmic contact.

A battery assembly includes single-battery cells, and thermally-conductive members. The thermally-conductive members are formed of a soft material as a plated configuration. The soft material exhibits thermal conductivity and electric insulatability. The single-battery cells, and the thermally-conductive members are adhered to each other, and are disposed one after another alternately in a row, thereby interposing the thermally-conducive members between the single-cell batteries. The thermally-conductive members include a radiation surface respectively from which heat that the single-battery cells produce radiates. The single-battery cells are cooled indirectly by cooling the radiation surfaces of the thermally-conductive members.

In the solid-state image sensor including 4-Tr-pixels, a source follower transistor SF-Tr, a rest transistor RST and a select transistor Select are made common between pixels Pn, Pn+1 adjacent in the column direction, and a transfer transistor TG1 and a transfer transistor TG2 are formed in region which respectively positioned on the same side with respect to the photodiode PD1 and the photodiode PD2, and the source follower transistor SF-Tr, the reset transistor RST and the select transistor Select made common are formed in regions positioned on the side in the row direction with respect to the photodiode PD1 and the photodiode PD2.

A fin type field effect transistor includes a semiconductor substrate, an active fin, a first hard mask layer pattern, a gate insulation layer pattern, a first conductive layer pattern, and source / drain regions. The active fin includes a semiconductor material and is formed on the substrate and extends in a direction away from a major surface of the substrate. The first hard mask layer pattern is formed on a distal surface of the active fin from the substrate. The gate insulation layer is formed on a sidewall portion of the active fin. The first conductive layer pattern includes a metal silicide and is formed on surfaces of the substrate and the gate insulation layer pattern, and on a sidewall of the first hard mask pattern. The source / drain regions are formed in the active fin on opposite sides of the first conductive layer pattern.

The invention provides a knowledge management system particularly suited for use in the integrated circuit design environment. The system allows administrators to define standardized component types. Instantiated components versions comprise “deliverables” and “attributes.” Deliverables comprise a file or directory of files or groups of files or directories that perform a common function and are characterized by the system in a standardized manner. Attributes comprise metadata describe the component version. By the abstraction of design files into deliverables, the systems can work with design files originating from any source and having different structures and still make those design files available by other designers in a uniform manner for efficient reuse of pre-qualified components. Tasks in the design flow can be tracked in the system. The system may also include a communications application, an issue tracking application, and an audit trail application.

An n-channel transistor or a p-channel transistor provided with a second gate electrode for controlling a threshold voltage in addition to a normal gate electrode is used for a complementary logic circuit. In addition, an insulated gate field-effect transistor with an extremely low off-state current is used as a switching element to control the potential of the second gate electrode. A channel formation region of the transistor which functions as a switching element includes a semiconductor material whose band gap is wider than that of a silicon semiconductor and whose intrinsic carrier density is lower than that of silicon.

A power supply apparatus is provided, that supplies a bus voltage VBUS to a detachable device. A DC / DC converter generates a DC voltage VOUT used as the bus voltage VBUS. A USB controller receives the DC voltage VOUT as a power supply voltage, and detects whether or not the device is connected. The DC / DC converter generates the DC voltage VOUT such that (i) when the device is detected, the DC voltage VOUT has a specified voltage level, and such that (ii) when the device is not detected, the DC voltage VOUT has a voltage level that is lower than the specified voltage level and that is higher than a minimum operating voltage level required to operate the USB controller.

A semiconductor oxidation apparatus is provided with a sealable oxidation chamber defined by walls, a base provided within the oxidation chamber and configured to support a semiconductor sample, a supply part configured to supply water vapor into the oxidation chamber to oxidize a specific portion of the semiconductor sample, a monitoring window provided in one of the walls of the oxidation chamber and disposed at a position capable of confronting the semiconductor sample supported on the base, a monitoring part provided outside the oxidation chamber and capable of confronting the semiconductor sample supported on the base via the monitoring window, and an adjusting part configured to adjust a distance between the base and the monitoring part.

A thin film transistor array substrate having a high charge mobility and that can raise a threshold voltage, and a method of fabricating the thin film transistor array substrate are provided. The thin film transistor array substrate includes: an insulating substrate; a gate electrode formed on the insulating substrate; an oxide semiconductor layer comprising a lower oxide layer formed on the gate electrode and an upper oxide layer formed on the lower oxide layer, such that the oxygen concentration of the upper oxide layer is higher than the oxygen concentration of the lower oxide layer; and a source electrode and a drain electrode formed on the oxide semiconductor layer and separated from each other.

Output of a gyro sensor is read at intervals of control time ts, time integration is carried out, an integrated value is computed, and an amount of change in an integrated value is determined from a difference between the calculated integrated value and an integrated value of a previous time. Thereafter, on the basis of the amount of change and a delay time determined by a shaking correcting module and the control time, an addition value (an acceleration value of an integrated value of the current time) is computed in order to obtain an amount of movement of a shift lens which can compensate tilting of an optical axis of a lens. After the computed addition value is added to the integrated value of the current time, a control value for moving the shift lens is computed by using the integrated value after addition.

To obtain an optical element capable of obtaining uniform anti reflection characteristics over the whole optical surface having a finite curvature of the optical element, a plurality of convex optical pieces having an anti reflection function are provided on a surface having the finite curvature of the optical element independently along a normal direction of the surface having the finite curvature of the optical element.

Disclosed is an electron-emitting device, an electron source, and an image-forming apparatus that have uniform electron-emitting characteristics, emit electron beams whose diameters are small, have simple constructions, and are easy to be manufactured. The electron-emitting device comprising: a first electrode arranged on a surface of a substrate; an insulating layer arranged on the first electrode; a second electrode arranged on the insulating layer; and an electron-emitting film arranged on the second electrode, where the second electrode has two side surfaces that oppose each other in a direction parallel to the surface of the substrate, and the electron-emitting film is arranged so as to be shifted toward one of the two side surfaces.

A semiconductor device includes: a first memory cell, a bit line and a second memory cell. The first memory cell has a first stack structure including a first memory layer between a first heater electrode and a first ovonic threshold switching device. The bit line is on the first memory cell. The second memory cell is on the bit line, and has a second stack structure including a second memory layer between a second ovonic threshold switching device and a second heater electrode. The first and second stack structures are symmetrical with respect to the bit line.

An optical amplifier is provided for performing amplification of optical signals of two wavelength bands, where deterioration in the optical SN ratio relative to one wavelength band is reduced, with a simple construction which can deal with restrictions on installation space, power consumption and the like. To this end, the present optical amplifier has a C / L band optical amplifying section for amplifying respective optical signals of a C band and an L band, a demultiplexer for demultiplexing output light from the C / L band optical amplifying section into the C band and the L band, an L band optical amplifying section for amplifying L band optical signals which have been demultiplexed by the demultiplexer, and a multiplexer for multiplexing the C band optical signals which have been demultiplexed by the demultiplexer and the L band optical signals which have been amplified by the L band optical amplifying section. The construction is such that a part of excitation light of a 1480 nm band used in the C / L band optical amplifying section is supplied via an input terminal to a Raman amplification producing medium of a transmission path, and Raman amplified L band optical signals are input to the C / L band optical amplifying section.

A semiconductor device includes a first conductive layer, a second conductive layer spaced from the first conductive layer, a variable resistance layer interposed between the first and second conductive layers, and an impurity-doped layer provided over a side surface of the variable resistance layer. The variable resistance layer has a smaller width than the first and the second conductive layers.

A compound semiconductor laser of a III group nitride semiconductor of the present invention includes a first cladding layer 104 of a first conduction type formed on a substrate 101, an active layer 106 formed on the first cladding layer, a second cladding layer 108 of a second conduction type formed on the active layer 106, and a buried layer 110 formed on the second cladding layer 108, the buried layer having an opening portion for constricting a current in a selected region of the active layer, wherein an upper portion of the second cladding layer 108 has a ridge portion, the ridge portion residing in the opening portion of the buried layer 110, and the buried layer 110 does not substantially absorb light output from the active layer 106, and the buried layer has a refractive index which is approximately identical with that of the second cladding layer 108.

In a drive circuit of light emission device arrays each having at least one light emission device, at least one of the light emission diode arrays is pulse-driven with a pulse of phase different from the other light emission device arrays. While the at least one light emission device array driven with a different phase is OFF, a processing circuit acquires the luminiferous level of each of the other light emission device arrays by using the at least one light emission device array which is OFF as a light reception device. Furthermore, a control circuit controls the drive level of the drive circuit for the light emission device arrays which are ON.

A gas supply mechanism includes a gas introduction member having gas inlet portions through which a gas is introduced into a processing chamber, a processing gas supply unit, a processing gas supply path, branch paths, an additional gas supply unit and an additional gas supply path. The gas inlet portions includes inner gas inlet portions for supplying the gas toward a region where a target substrate is positioned in the chamber and an outer gas inlet portion for introducing the gas toward a region outside an outermost periphery of the target substrate. The branch paths are connected to the inner gas inlet portions, and the additional gas supply path is connected to the outer gas inlet portion.

To respond to variation of characteristics of light-curable liquid. In order to do that, ink information that is recorded in a contact ROM of an ink cartridge is read out, and adjustment is performed based on the read-out ink information.

A control circuit is employed for controlling a wireless power receiving apparatus that receives an electric power signal from a wireless power transmission apparatus. An electric power detection unit detects the received electric power PRX received by the wireless power receiving apparatus. A control unit generates a control signal CE for controlling the electric power PTX to be transmitted by the wireless power transmission apparatus. When the received electric power PRX detected by the electric power detection unit falls despite the control signal CE not indicating an instruction to lower the electric power PTX to be transmitted, an abnormal state judgment unit judges that an abnormal state has occurred.

A fruorine-free mold flux for the continuous casting of steel and method for producing the same relates to a mold flux for the continuous casting of new steel grade, which accord with the requirement of protecting natural environment. The characteristic is in that the mold flux contains the fellowing compositions and performance range: 23-40% SiO2, 20-4-% CaO, 0.5-10% MgO, 0.5-10% Al2O3, 0.5-10% MnO2, 2-15% Na2O, 5-15% B2O3, and 0.5-10% C; the melting point is 800-1200 DEG C, the viscosity is 0.2-5 pt, and the crystallizer rate is 0.1-30%. The advantages of the invention are in that the fruorine-free mold flux can alternatively act the role of the fluorine component, according with the continuous casting conditions (steel grade, casting speed, and the like). In this way, uniform fusing characteristic, fluidity and viscosity are improved or promoted, and the mold flux is contributed to the improvement of the operational stability and the product quality with the smooth workability in the continuous casting process by singly or in combination use.

An external circuit element RSET is connected in use to an SET terminal. A synchronous rectification controller generates a pulse signal S1 based on a control time determined according to the state of the SET terminal. A driver switches on and off the synchronous rectification transistor according to the pulse signal S1. An abnormal state detection circuit is capable of detecting an open-circuit state and / or a short-circuit state that can occur in the SET terminal. When the abnormal state detection circuit detects such an open-circuit state and / or short-circuit state, the abnormal state detection circuit asserts a detection signal S11. When the detection signal S11 is asserted, a primary-side controller arranged on the primary side of the DC / DC converter is instructed to suspend the switching operation of a switching transistor.