483results about How to "Uniform characteristics" patented technology

A system, method, and apparatus for ultrasonic detection of flaws or defects in oil field tubulars utilizing composite transducers. An array of composite transducers are utilized to detect anomalies in the tubulars, such as transverse, wall or longitudinal defects. The use of the composite transducers allow for a greater inspection area over traditional transducers thereby reducing the number of channels needed for inspection of the tubulars.

The invention provides a knowledge management system particularly suited for use in the integrated circuit design environment. The system allows administrators to define standardized component types. Instantiated components versions comprise “deliverables” and “attributes.” Deliverables comprise a file or directory of files or groups of files or directories that perform a common function and are characterized by the system in a standardized manner. Attributes comprise metadata describe the component version. By the abstraction of design files into deliverables, the systems can work with design files originating from any source and having different structures and still make those design files available by other designers in a uniform manner for efficient reuse of pre-qualified components. Tasks in the design flow can be tracked in the system. The system may also include a communications application, an issue tracking application, and an audit trail application.

A semiconductor oxidation apparatus is provided with a sealable oxidation chamber defined by walls, a base provided within the oxidation chamber and configured to support a semiconductor sample, a supply part configured to supply water vapor into the oxidation chamber to oxidize a specific portion of the semiconductor sample, a monitoring window provided in one of the walls of the oxidation chamber and disposed at a position capable of confronting the semiconductor sample supported on the base, a monitoring part provided outside the oxidation chamber and capable of confronting the semiconductor sample supported on the base via the monitoring window, and an adjusting part configured to adjust a distance between the base and the monitoring part.

A thin film transistor array substrate having a high charge mobility and that can raise a threshold voltage, and a method of fabricating the thin film transistor array substrate are provided. The thin film transistor array substrate includes: an insulating substrate; a gate electrode formed on the insulating substrate; an oxide semiconductor layer comprising a lower oxide layer formed on the gate electrode and an upper oxide layer formed on the lower oxide layer, such that the oxygen concentration of the upper oxide layer is higher than the oxygen concentration of the lower oxide layer; and a source electrode and a drain electrode formed on the oxide semiconductor layer and separated from each other.

To obtain an optical element capable of obtaining uniform anti reflection characteristics over the whole optical surface having a finite curvature of the optical element, a plurality of convex optical pieces having an anti reflection function are provided on a surface having the finite curvature of the optical element independently along a normal direction of the surface having the finite curvature of the optical element.

A semiconductor device includes: a first memory cell, a bit line and a second memory cell. The first memory cell has a first stack structure including a first memory layer between a first heater electrode and a first ovonic threshold switching device. The bit line is on the first memory cell. The second memory cell is on the bit line, and has a second stack structure including a second memory layer between a second ovonic threshold switching device and a second heater electrode. The first and second stack structures are symmetrical with respect to the bit line.

An optical amplifier is provided for performing amplification of optical signals of two wavelength bands, where deterioration in the optical SN ratio relative to one wavelength band is reduced, with a simple construction which can deal with restrictions on installation space, power consumption and the like. To this end, the present optical amplifier has a C / L band optical amplifying section for amplifying respective optical signals of a C band and an L band, a demultiplexer for demultiplexing output light from the C / L band optical amplifying section into the C band and the L band, an L band optical amplifying section for amplifying L band optical signals which have been demultiplexed by the demultiplexer, and a multiplexer for multiplexing the C band optical signals which have been demultiplexed by the demultiplexer and the L band optical signals which have been amplified by the L band optical amplifying section. The construction is such that a part of excitation light of a 1480 nm band used in the C / L band optical amplifying section is supplied via an input terminal to a Raman amplification producing medium of a transmission path, and Raman amplified L band optical signals are input to the C / L band optical amplifying section.

A thin film transistor (TFT), a method of manufacturing the TFT, and a flat panel display comprising the TFT are provided. The TFT includes a gate, a gate insulating layer that contacts the gate, a channel layer that contacts the gate insulating layer and faces the gate with the gate insulating layer therebetween, a source that contacts an end of the channel layer; and a drain that contacts an other end of the channel layer, wherein the channel layer is an amorphous oxide semiconductor layer, and each of the source and the drain is a conductive oxide layer comprising an oxide semiconductor layer having a conductive impurity in the oxide semiconductor layer. A low resistance metal layer can further be included on the source and drain. A driving circuit of a unit pixel of a flat panel display includes the TFT.

A compound semiconductor laser of a III group nitride semiconductor of the present invention includes a first cladding layer 104 of a first conduction type formed on a substrate 101, an active layer 106 formed on the first cladding layer, a second cladding layer 108 of a second conduction type formed on the active layer 106, and a buried layer 110 formed on the second cladding layer 108, the buried layer having an opening portion for constricting a current in a selected region of the active layer, wherein an upper portion of the second cladding layer 108 has a ridge portion, the ridge portion residing in the opening portion of the buried layer 110, and the buried layer 110 does not substantially absorb light output from the active layer 106, and the buried layer has a refractive index which is approximately identical with that of the second cladding layer 108.

A heater for changing a projection distance protrusion value by thermal expansion accompanying electric-power-distributed heating is embedded in a head having a reading element and a recording element. A clearance control information measurement unit measures and saves, at desired correction timing, clearance control information including a clearance required for controlling the clearance between the reading element and the recording medium, heater projection sensitivity protrusion sensitivity, projection distance protrusion value transition time, recording current projection distance protrusion value, and a temperature correction coefficient. The clearance control unit varies the electric power distributed to the heater and changes the projection distance protrusion value of the head, thereby controlling the clearance to a target clearance upon reproduction and recording.

A gas supply mechanism includes a gas introduction member having gas inlet portions through which a gas is introduced into a processing chamber, a processing gas supply unit, a processing gas supply path, branch paths, an additional gas supply unit and an additional gas supply path. The gas inlet portions includes inner gas inlet portions for supplying the gas toward a region where a target substrate is positioned in the chamber and an outer gas inlet portion for introducing the gas toward a region outside an outermost periphery of the target substrate. The branch paths are connected to the inner gas inlet portions, and the additional gas supply path is connected to the outer gas inlet portion.

A fruorine-free mold flux for the continuous casting of steel and method for producing the same relates to a mold flux for the continuous casting of new steel grade, which accord with the requirement of protecting natural environment. The characteristic is in that the mold flux contains the fellowing compositions and performance range: 23-40% SiO2, 20-4-% CaO, 0.5-10% MgO, 0.5-10% Al2O3, 0.5-10% MnO2, 2-15% Na2O, 5-15% B2O3, and 0.5-10% C; the melting point is 800-1200 DEG C, the viscosity is 0.2-5 pt, and the crystallizer rate is 0.1-30%. The advantages of the invention are in that the fruorine-free mold flux can alternatively act the role of the fluorine component, according with the continuous casting conditions (steel grade, casting speed, and the like). In this way, uniform fusing characteristic, fluidity and viscosity are improved or promoted, and the mold flux is contributed to the improvement of the operational stability and the product quality with the smooth workability in the continuous casting process by singly or in combination use.