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40435results about How to "Increase production capacity" patented technology

Oil and gas reservoir production analysis apparatus and method

A petroleum reservoir production modeling apparatus and method is disclosed which incorporates a complete (from reservoir to wellhead) production systems analysis system for the evaluation of petroleum reservoir production performance, using industry accepted techniques of analysis. A computer generated model facilitates the determination of well and formation properties in a computerized methodology, efficiently, reliably and accurately, thereby facilitating subsequent changes in wellbore properties to maximize well production. The method includes a rigorous analytic reservoir inflow performance model for a variety of well types and reservoir outer boundary conditions and drainage area shapes, and uses industry accepted production analysis techniques. These techniques accepted in the industry include material balance, decline curve analysis, and non-linear minimization procedures. Field-recorded production data is evaluated to obtain estimates of the well or formation properties. Statistical techniques are used to minimize or eliminate the effects of outlier (i.e. noise) points in the data.
Owner:SCHLUMBERGER TECH CORP

Atomic layer deposition equipment

Provided atomic layer deposition equipment comprises a reaction chamber and a gas source; the reaction chamber is inside provided with a gas distribution plate arranged at the top, a base disc and a rotary driving mechanism; the upper surface of the base disc and the lower surface of the gas distribution plate are mutually superposed; multiple sub-spaces uniformly distributed along the circumferential direction of the reaction chamber at intervals are formed between the upper surface of the base disc and the lower surface of the gas distribution plate, the multiple sub-spaces are successively arranged according to the operation sequence, and each sub-space is corresponding to one operation in a process of performing once technology on a base chip; and the rotary driving mechanism is used to drive the base disc to rotate relatively to the gas distribution plate so as to enable the base disc to drive all base chips thereon to be successively placed into the multiple sub-spaces for technological processing according to the operation sequence. The provided atomic deposition equipment is capable of processing multiple base chips at the same time by using different operations, thereby improving the technological efficiency and further improving the production power.
Owner:BEIJING NAURA MICROELECTRONICS EQUIP CO LTD

Method for manufacturing semiconductor device

ActiveUS20100035379A1Small photocurrentLow parasitic capacitanceSolid-state devicesSemiconductor/solid-state device manufacturingOxide semiconductorResist
To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.
Owner:SEMICON ENERGY LAB CO LTD

Process for forming high resistivity thin metallic film

A process for forming metallic nitride film by atomic layer deposition (ALD), which comprises steps for feeding into a reaction space vapor phase alternated pulses of metal source material and silicon source material in a plurality of cycles, and feeding into the reaction space vapor phase pulses of nitrogen source material. wherein a nitrogen source pulse is fed intermittently in selected cycles such that a ratio of nitrogen source pulses to silicon source pulses is less than 1:1 and a ratio of nitrogen source pulses to metal source pulses is less than 1:1, the ratio selected to produce the thin film with a resistivity between 1,000 μΩcm and 15,000 μΩcm.
Owner:ASM JAPAN

Sublevel shrinkage caving stage open stope afterwards filling mining method

The invention discloses a sublevel shrinkage caving stage open afterwards filling mining method. In the earlier stage of stoping, caved ores are utilized to support surrounding rocks on a top tray, and in the later stage of stoping, a goaf area is filled with fillers to control ground pressure so as to achieve safe and efficient mining. Ore blocks are mined in two steps, mining blocks in step two are stoped after the mining blocks in step one are stoped and filled. After the ores are completely let out, the goaf area is filled with the fillers to control the ground pressure. Because the stoping modes of sublevel ore caving, sublevel shrinkage, final ore drawing and empty area afterwards filling are adopted, the mining method has large one-time filling amount and low cost; the method adopts middle-deep hole drilling and blasting and carry scraper ore removal, and the device has high level and large production capacity; the method has the advantages of large production capacity of the sublevel caving method and the stage open stope method, high recovery rate of the filling method, and earth surface protection; the safety is good, and drilling, ore removal and other operations are all carried out in a sublevel drilling and ore removal approach roadway; and the ores can be removed in advance, and the ores can be removed partially after the first sublevel is ready.
Owner:NORTHEASTERN UNIV +1
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