36117results about "Special surfaces" patented technology

In a process for producing an oriented inorganic crystalline film, a non-monocrystalline film containing inorganic crystalline particles is formed on a substrate by a liquid phase technique using a raw-material solution which contains a raw material and an organic solvent, where the inorganic crystalline particles have a layered crystal structure and are contained in the raw material. Then, the non-monocrystalline film is crystallized by heating the non-monocrystalline film to a temperature equal to or higher than the crystallization temperature of the non-monocrystalline film so that part of the inorganic crystalline particles act as crystal nuclei.

One embodiment of the present invention is a color EL display characterized in that at least color filters, a thin film transistor circuit, an organic EL layer, and a common electrode are laminated in this order on a transparent substrate. Another embodiment of the invention is a method for producing a color EL display comprising the steps of forming color filters or a transparent substrate; forming a thin film transistor circuit; forming an organic EL layer; and forming a common electrode, wherein process temperatures of the steps of forming the thin film transistor circuit and subsequent steps are 200° C. or less.

A ZnO-based transparent conductive film has practicable moisture resistance, desired characteristics of a transparent conductive film, and excellent economy. The transparent conductive film is produced by growing ZnO doped with a group III element oxide on a substrate and has a region with a crystal structure in which a c-axis grows along a plurality of different directions. The transparent conductive film produced by growing ZnO doped with a group III element oxide on a substrate has a ZnO (002) rocking curve full width at half maximum of about 13.5° or more.

ZnO is doped with a group III element oxide so that the ratio of the group III element oxide in the transparent conductive film is about 7% to about 40% by weight.

The transparent conductive film is formed on the substrate with a SiNx thin film provided therebetween.

The transparent conductive film is formed on the substrate by a thin film formation method with a bias voltage applied to the substrate.

An electrode array for use in an electrochemical device is provided. The electrode array includes at least one electrode material and at least one insulating material arranged in a spiral configuration. The electrode array is manufactured by forming a composite stack of the at least one electrode material and the at least one insulating material, such that the insulating material(s) surrounds the electrode material(s) after which the stack is rolled into a spiral roll. The spiral roll can be cut, sliced, and/or dissected in numerous ways to form the electrode array of the preferred embodiments. Optionally, the sections can be further processed by machining, polishing, etching, or the like, to produce a curvature or stepped configuration.

Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.

A method for forming a metal compound film includes alternate irradiation of an organometal compound and oxygen or nitrogen radicals to deposit monoatomic layers of the metal compound. The organometal compound includes zirconium, hafnium, lanthanide compounds. The resultant film includes little residual carbon and has excellent film characteristic with respect to leakage current.

A method for forming a metal interconnect on a substrate is provided. The method includes depositing a refractory metal-containing barrier layer having a thickness less than about 20 angstroms on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound. The method also includes depositing a seed layer on at least a portion of the barrier layer, and depositing a second metal layer on at least a portion of the seed layer. The barrier layer provides adequate barrier properties and allows the grain growth of the metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

Described here are embodiments of processes and systems for the continuous manufacturing of implantable continuous analyte sensors. In some embodiments, a method is provided for sequentially advancing an elongated conductive body through a plurality of stations, each configured to treat the elongated conductive body. In some of these embodiments, one or more of the stations is configured to coat the elongated conductive body using a meniscus coating process, whereby a solution formed of a polymer and a solvent is prepared, the solution is continuously circulated to provide a meniscus on a top portion of a vessel holding the solution, and the elongated conductive body is advanced through the meniscus. The method may also comprise the step of removing excess coating material from the elongated conductive body by advancing the elongated conductive body through a die orifice. For example, a provided elongated conductive body 510 is advanced through a pre-coating treatment station 520, through a coating station 530, through a thickness control station 540, through a drying or curing station 550, through a thickness measurement station 560, and through a post-coating treatment station 570.

A method for making a disposable absorbent core comprises depositing absorbent particulate polymer material from a plurality of reservoirs in a printing roll onto a substrate disposed on a grid of a support which includes a plurality of cross bars extending substantially parallel to and spaced from one another so as to form channels extending between the plurality of cross bars. The plurality of reservoirs in the first peripheral surface are arranged in an array comprising rows extending substantially parallel to and spaced from one another. The support and printing roll are arranged such that the plurality of cross bars are substantially parallel to the rows of the plurality of reservoirs and the absorbent particulate polymer material is deposited on the substrate in a pattern such that the absorbent particulate polymer material collects in rows on the first substrate formed between the first plurality of cross bars. A thermoplastic adhesive material is deposited on the absorbent particulate polymer material and the substrate to cover the absorbent particulate polymer material on the substrate and form an absorbent layer. A disposable absorbent article and apparatus for making an absorbent article are also disclosed.

Described here are embodiments of processes and systems for the continuous manufacturing of implantable continuous analyte sensors. In some embodiments, a method is provided for sequentially advancing an elongated conductive body through a plurality of stations, each configured to treat the elongated conductive body. In some of these embodiments, one or more of the stations is configured to coat the elongated conductive body using a meniscus coating process, whereby a solution formed of a polymer and a solvent is prepared, the solution is continuously circulated to provide a meniscus on a top portion of a vessel holding the solution, and the elongated conductive body is advanced through the meniscus. The method may also comprise the step of removing excess coating material from the elongated conductive body by advancing the elongated conductive body through a die orifice. For example, a provided elongated conductive body 510 is advanced through a pre-coating treatment station 520, through a coating station 530, through a thickness control station 540, through a drying or curing station 550, through a thickness measurement station 560, and through a post-coating treatment station 570.

Disclosed is an exposure apparatus which includes a projection optical system for projecting a pattern of a reticle onto a substrate, wherein the substrate is exposed through a liquid medium kept at least in a portion between the substrate and an optical element of the projection optical system which optical element is nearest to the substrate, a supplying system for supplying a liquid medium, a collecting system for collecting a liquid medium, and an exhausting system for removing a bubble in the liquid medium through a bubble removing material having such property that it passes a gas but it does not pass a liquid.

Methods and structures relating to the formation of mixed SAMs for preventing undesirable growth or nucleation on exposed surfaces inside a reactor are described. A mixed SAM can be formed on surfaces for which nucleation is not desired by introducing a first SAM precursor having molecules of a first length and a second SAM precursor having molecules of a second length shorter than the first. Examples of exposed surfaces for which a mixed SAM can be provided over include reactor surfaces and select surfaces of integrated circuit structures, such as insulator and dielectric layers.

This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

Disclosed are compositions for an organic electroluminescent device favorably used for forming a hole injection layer and a hole transport layer of the organic electroluminescent device by a wet film forming method. The compositions for the organic electroluminescent device, which are composite solutions prepared by dissolving hole transport materials such as aromatic diamine compounds and an electron acceptor such as tri(pentafluorophenyl)boron in a solvent that contains an ether solvent and/or an ester solvent whose water solubility at 25° C. is 1 weight % or less in the solvent, with a concentration of 10 weight % or higher in the compositions.

Methods of forming garments having one or more stretchable conductive ink patterns. Described herein are method of making garments (including compression garments) having one or more highly stretchable conductive ink pattern formed of a composite of an insulative adhesive, a conductive ink, and an intermediate gradient zone between the adhesive and conductive ink. The conductive ink typically includes between about 40-60% conductive particles, between about 30-50% binder; between about 3-7% solvent; and between about 3-7% thickener. The stretchable conductive ink patterns may be stretched more than twice their length without breaking or rupturing.

Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.