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2622 results about "Hole injection layer" patented technology

Among them, the hole injection layer (HIL) is a key part for the overall performances of QD-LEDs, as it not only serves as a buffered channel to reduce the hole injection barrier, but also modifies the surface of the electrode and helps suppress the leakage current.

Organic electroluminescent device

An organic electroluminescent device includes an anode electrode layer; a cathode electrode layer opposed to the anode electrode layer; a hole injection layer provided adjacent to the anode electrode layer an organic structure including at least one light-emissive layer_or at least one light-emissive unit having at least one light-emissive layer; between the anode electrode layer and the cathode electrode layer. At least one of the anode electrode layer and the cathode electrode layer is transparent. The hole injection layer includes a mixed layer of a metal oxide and an organic compound. The mixed layer is formed upon co-deposition of the metal oxide and the organic compound.
Owner:MITSUBISHI HEAVY IND LTD +1

Fabrication of full-color OLED panel using micro-cavity structure

Methods of making top-emitting or bottom-emitting full-color OLED flat panel using micro-cavity structure for primary colors are disclosed. The primary colors are realized by setting a different thickness for the hole injection layer of the OLEDs for each primary color, while keeping the thickness of the hole transport layer, the emission layer, the electron transport layer the same for all the OLEDs. Steps for predetermining the respective thickness of the hole injection layer for each primary color are also disclosed.
Owner:ITC LIMITED

Organic light-emitting device with improved layer structure

An organic light emitting device having a cathode, an anode and an organic layer structure disposed between the cathode and the anode, the organic layer structure comprising a hole injection layer doped with a p-type dopant, a hole transport layer, an emissive layer and an electron transport layer doped with an n-type dopant, wherein all of the layers in the organic layer structure are substantially made from the same organic host material. In particular, the organic host material is a bipolar organic material such as a derivative of fused aromatic rings. The emissive layer can be doped with a fluorescent dye or a phosphorescent dye.
Owner:CHINA STAR OPTOELECTRONICS INT HK

Organic electroluminescence device with stable luminescence and preparation method thereof

The invention claims an organic electroluminescence device with stable luminescence, which comprises a substrate, a first electrode layer, a functional layer and a second electrode. The first electrode layer is arranged on the surface of the substrate; the functional layer is arranged on the first electrode layer and the second electrode is arranged above the functional layer, wherein the functional layer at least comprises an electron injection layer, an electronic transmission layer, a luminous layer, a hole transmission layer and a hole injection layer; the luminous layer is a compound doping luminous layer consisting of a double-layer doping luminous layer; the double-layer doping luminous layer respectively uses electronic transmission materials and hole transmission materials as a main material. By adopting the conventional phosphorescence dyes and fluorescent dyes with excellent performance as doping object materials in the luminous layer, through adjusting the thickness and the components of the luminous layer, the invention prepares the organic electroluminescence device with stable luminescence and high performance to meet the use requirement on information display and illumination.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Nitride luminescent device and production method thereof

The invention discloses a nitride luminescent device and a production method thereof, which relate to a semiconductor luminescent device and provide a nitride luminescent device with an asymmetric coupled multi-quantum well structure being the active area. The device at least comprises an n-type electron injection layer, a p-type hole injection layer and a multi-quantum well active layer which is sandwiched between the n-type electron injection layer and the p-type hole injection layer, and the active layer is composed of asymmetric coupled quantum well structures. The barrier layer of the quantum well is thinner, thus being easy to realize the tunneling of current carriers; transition energy between ground-state energy level in the quantum wells is gradually changed; the quantum wells with high transition energy are close to the p-type hole injection layer; and the quantum wells with low transition energy are close to the n-type electron injection layer. The active area structure can enhance the tunneling transportation of the holes in the quantum well active area, simultaneously block the tunneling transportation of electrons in the quantum well active area, improve the uneven distribution of current carriers in the active area of the nitride luminescent device, reduce electron leakage and energy band filling effect, and realize high-efficiency luminescence.
Owner:XIAMEN UNIV

Organic light-emitting display device

An object of the present invention is to provide an organic light-emitting display device using a number of organic light-emitting elements that emit lights of different colors, wherein the life of the organic light-emitting elements that emits light of a color having a short life can be prolonged. According to the present invention, a hole injection layer 7, an α-NPD vapor deposited film 8, an n doped electron transportation layer 11 and a p doped hole transportation layer 12, which are patterned to the same size as B sub-pixels, a DNA vapor deposited film 13, an electron injection layer 14 and an upper electrode 15 are formed on a lower electrode 5 in a B sub-pixel. The α-NPD vapor deposited film 8 and the DNA vapor deposited film 13 function as a blue light-emitting layer and exhibit the same properties as when a blue light-emitting element made up of a lower electrode 5, a hole injection layer 7, an α-NPD vapor deposited film 8 and an n doped electron transportation layer 11 and a blue light-emitting element made up of a p doped hole transportation layer 12, a DNA vapor deposited film 13, an electron injection layer 14 and an upper electrode 15 are connected in series. Therefore, it becomes possible to lower the value of a current required for certain brightness, and thus, the life can be prolonged.
Owner:PANASONIC LIQUID CRYSTAL DISPLAY CO LTD +1

GaN-based light emitting diode and preparation method thereof

The invention relates to a GaN-based light emitting diode and a preparation method thereof. An initial growth layer, a GaN buffer layer, an n-type electronic injection layer, a quantum well structure electronic emission layer, a quantum well structure light emitting active layer, a p-type AlInGaN electronic stopping layer and a p-type cavity injection layer are grown on an epitaxial substrate of the light emitting diode sequentially; in the quantum well structure of the electronic emission layer, the width of a forbidden band of the AlInGaN quantum well layer in the emission layer is greater than that of the forbidden band of the AlInGaN quantum well in the light emitting active layer; and the AlInGaN quantum well layer of the quantum well structure electronic emission layer is triangular. The GaN-based light emitting diode has the advantages that the quantum well structure electronic emission layer can improve the efficiency of an electronic injection light emitting active layer effectively; and by the triangular quantum well structure of the electronic emission layer, the polarization effect of the epitaxial substrate of the light emitting diode can be reduced, and the working voltage of the light emitting diode is decreased.
Owner:SUN YAT SEN UNIV

Novel quantum dot luminescent device

The invention belongs to the field of electroluminescent devices and particularly relates to a novel quantum dot luminescent device. The novel quantum dot luminescent device comprises an ITO anode, a hole injection layer, a hole transmission layer, a quantum dot luminescent layer, an electron transmission layer, an Al cathode and an insulating layer, wherein the insulating layer is arranged between the hole transmission layer and the quantum dot luminescent layer. The material of the insulating layer can be one or more of polymethyl methacrylate, calcium oxide, aluminum oxide, silicon oxide or gallium oxide and the like. Through the arrangement of the insulating layer, on one hand, injection of holes and electrons is effectively balanced; and on the other hand, the electric neutrality of quantum dots is ensured, so that the luminescence property of a blue-green quantum dot light-emitting diode is improved.
Owner:HENAN UNIVERSITY
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