2619 results about "Hole injection layer" patented technology

The present invention relates to a spiro-compound for an electroluminescence display device and an electroluminescence display device including the same. More particularly, the present invention relates to a spiro-compound comprising at least one selected from the group consisting of a compound represented as the following Formulae 1 and 2 and an electroluminescence display device including the same: In the above Formulae 1 and 2, the definition of the substituents is the same as in the specification. The spiro-compounds represented by the above Formulae 1 and 2 are applicable to any one of a hole injection layer (HIL), a hole transport layer (HTL), an electroluminescent layer, an electron transport layer (ETL), and an electron injection layer (EIL) of the electroluminescence display device. The spiro-compound can realize various colors with low energy, emit blue light even at a low voltage, and have an advantage of excellently increasing luminance and luminous efficiency.

A hole injection layer, a hole transport layer, a blue light emitting layer, an orange light emitting layer, an electron transport layer, an electron injection layer, and a cathode are formed in this order on an anode. The blue light emitting layer is composed of a host material doped with an assisting dopant and a luminescent dopant emitting blue light. A material used for the hole transport layer is used for the assisting dopant. The orange light emitting layer is composed of a host material doped with a luminescent dopant emitting orange light.

Compositions are provided comprising aqueous dispersions of polythienothiophenes and colloid-forming polymeric acids. Films from invention compositions are useful as hole injection layers in organic electronic devices, including electroluminescent devices, such as, for example, organic light emitting diodes (OLED) displays, as hole extraction layers in organic optoelectronic devices, such as organic photovoltaic devices, and in combination with metal nanowires or carbon nanotubes in applications such as drain, source, or gate electrodes in thin film field effect transistor.

A top-emission-type organic EL device comprising a substrate and at least a light-reflective anode, a bole-injection layer comprising first and second hole-injection layers, a hole-transport layer, a light-emitting layer, an electron-transport layer, and a light-transmitting cathode, which are sequentially laminated on the substrate, wherein the light-reflective anode side of hole-injection layer (the first hole-injection layer) is doped with a metallic oxide.

The invention discloses a nitride luminescent device and a production method thereof, which relate to a semiconductor luminescent device and provide a nitride luminescent device with an asymmetric coupled multi-quantum well structure being the active area. The device at least comprises an n-type electron injection layer, a p-type hole injection layer and a multi-quantum well active layer which is sandwiched between the n-type electron injection layer and the p-type hole injection layer, and the active layer is composed of asymmetric coupled quantum well structures. The barrier layer of the quantum well is thinner, thus being easy to realize the tunneling of current carriers; transition energy between ground-state energy level in the quantum wells is gradually changed; the quantum wells with high transition energy are close to the p-type hole injection layer; and the quantum wells with low transition energy are close to the n-type electron injection layer. The active area structure can enhance the tunneling transportation of the holes in the quantum well active area, simultaneously block the tunneling transportation of electrons in the quantum well active area, improve the uneven distribution of current carriers in the active area of the nitride luminescent device, reduce electron leakage and energy band filling effect, and realize high-efficiency luminescence.

A quantum dot light-emitting device includes a substrate, a first electrode, a hole injection layer (“HIL”), a hole transport layer (“HTL”), an emitting layer, an electron transport layer (“ETL”), a plurality of nanoplasmonic particles buried in the ETL, and a second electrode.

The invention discloses a CsPbX3 inorganic perovskite quantum dot light-emitting diode (LED) prepared through a solution method. ITO glass is spin-coated with a PEDOT:PSS hole injection layer, then a hole transmission layer and metal halide perovskite quantum dots are spin-coated, and an electron transmission layer is deposited through heat evaporation or magnetron sputtering; afterwards, metal electrodes of the LED are deposited through heat evaporation, and the CsPbX3 inorganic perovskite quantum dot LED which gives out light evenly is obtained. The light-emitting color of the prepared quantum dot LED can be adjusted by changing the halogen ratio of a quantum dot light-emitting layer material and can cover the entire visible spectrum range.

Compositions for use in hole transporting layers (HTLs) or hole injection layers (HILs) are provided, as well as methods of making the compositions and devices fabricated from the compositions. OLED devices can be made. The compositions comprise at least one conductive conjugated polymer, at least one semiconducting matrix component that is different from the conductive conjugated polymer, and an optional dopant, and are substantially free of an insulating matrix component.