2625 results about "Hole injection layer" patented technology

Disclosed are compositions for an organic electroluminescent device favorably used for forming a hole injection layer and a hole transport layer of the organic electroluminescent device by a wet film forming method. The compositions for the organic electroluminescent device, which are composite solutions prepared by dissolving hole transport materials such as aromatic diamine compounds and an electron acceptor such as tri(pentafluorophenyl)boron in a solvent that contains an ether solvent and / or an ester solvent whose water solubility at 25° C. is 1 weight % or less in the solvent, with a concentration of 10 weight % or higher in the compositions.

An organic electroluminescent device includes an anode electrode layer; a cathode electrode layer opposed to the anode electrode layer; a hole injection layer provided adjacent to the anode electrode layer an organic structure including at least one light-emissive layer_or at least one light-emissive unit having at least one light-emissive layer; between the anode electrode layer and the cathode electrode layer. At least one of the anode electrode layer and the cathode electrode layer is transparent. The hole injection layer includes a mixed layer of a metal oxide and an organic compound. The mixed layer is formed upon co-deposition of the metal oxide and the organic compound.

Compositions are provided comprising aqueous dispersions of polythienothiophenes and colloid-forming polymeric acids. Films from invention compositions are useful as hole injection layers in organic electronic devices, including electroluminescent devices, such as, for example, organic light emitting diodes (OLED) displays, as hole extraction layers in organic optoelectronic devices, such as organic photovoltaic devices, and in combination with metal nanowires or carbon nanotubes in applications such as drain, source, or gate electrodes in thin film field effect transistors.

Methods of making top-emitting or bottom-emitting full-color OLED flat panel using micro-cavity structure for primary colors are disclosed. The primary colors are realized by setting a different thickness for the hole injection layer of the OLEDs for each primary color, while keeping the thickness of the hole transport layer, the emission layer, the electron transport layer the same for all the OLEDs. Steps for predetermining the respective thickness of the hole injection layer for each primary color are also disclosed.

The present invention relates to a spiro-compound for an electroluminescence display device and an electroluminescence display device including the same. More particularly, the present invention relates to a spiro-compound comprising at least one selected from the group consisting of a compound represented as the following Formulae 1 and 2 and an electroluminescence display device including the same: In the above Formulae 1 and 2, the definition of the substituents is the same as in the specification. The spiro-compounds represented by the above Formulae 1 and 2 are applicable to any one of a hole injection layer (HIL), a hole transport layer (HTL), an electroluminescent layer, an electron transport layer (ETL), and an electron injection layer (EIL) of the electroluminescence display device. The spiro-compound can realize various colors with low energy, emit blue light even at a low voltage, and have an advantage of excellently increasing luminance and luminous efficiency.

An organic EL device has a hole injecting electrode (2), an electron injecting electrode (6), an organic layer participating in a light emitting function disposed between the electrodes. The organic layer includes a light emitting layer (4) comprising a conjugated polymer. The device further includes an inorganic insulative hole injecting layer (3) or an inorganic insulative electron injecting layer (5). The device can take advantage of both organic and inorganic materials, and has an improved efficiency, an extended effective life, and a low cost.

An organic light emitting device structure is provided, which comprises: (a) a substrate; (b) a first electrode disposed over the substrate; (c) a polymeric layer comprising a conductive polymer disposed over the first electrode; (d) an organic layer consisting essentially of small molecule material disposed over and in direct contact with said polymeric layer; (e) a second electrode disposed over the organic layer; and (f) a thin film encapsulation region disposed over the second electrode. An organic light emitting device is also provided, which comprises: (a) a polymer layer comprising a hole injecting conductive polymer and (b) a small molecule layer comprising an emissive small molecule material. In certain embodiments, the small molecule layer further comprises a small molecule hole injection layer.

A hole injection layer, a hole transport layer, a blue light emitting layer, an orange light emitting layer, an electron transport layer, an electron injection layer, and a cathode are formed in this order on an anode. The blue light emitting layer is composed of a host material doped with an assisting dopant and a luminescent dopant emitting blue light. A material used for the hole transport layer is used for the assisting dopant. The orange light emitting layer is composed of a host material doped with a luminescent dopant emitting orange light.

An organic electroluminescence device includes: an anode; a cathode opposed to the anode; and a plurality of emitting units including at least a first emitting unit and a second emitting unit. The plurality of emitting units each includes: an emitting layer; and an intermediate unit between the first emitting unit and the second emitting unit. The intermediate unit includes an electron injecting layer, a zinc oxide layer and a hole injecting layer in this sequence from the anode. The electron injecting layer contains an electron donating material and is adjacent to the first emitting unit. The hole injecting layer contains an organic electron accepting material and is adjacent to the second emitting unit.

An organic electroluminescent device comprises an anode, a hole injection layer as CFx formed on the anode, a first hole transport layer formed on the hole injection layer and the first hole transport layer doped with a P-type dopant, a second hole transport layer formed on the first hole transport layer, a light emitting layer formed on the second hole transport layer, an electron transport layer formed on the light emitting layer, and a cathode formed on the electron transport layer. According to the structure of the organic electroluminescent device disclosed in the present invention, the hole injection layer and the first hole transport layer provide the function of increasing the efficiency of the hole injection so as to improve the operating life and stability of the device.

In an organic electroluminescent element in which a light emitting layer is disposed between a hole injection electrode and an electron injection electrode, and a hole injection layer is provided between the hole injection electrode and the light emitting layer, and an electron transport layer is provided between the electron injection electrode and the light emitting layer, the organic electroluminescent element is characterized in that a fluorocarbon layer is provided between the hole injection layer and the light emitting layer, and the electron transport layer is formed from a phenanthroline compound.

Top-emitting organic light-emitting diode devices include a reflective, opaque, and conductive anode layer including a metal or metal alloy or both formed over a transparent or an opaque substrate, a plurality of hole-injecting layers including a bilayer structure having a layer including an oxide and a layer including a fluorinated carbon disposed over the reflective, opaque, and conductive anode, a plurality of organic layers formed over the plurality of hole-injecting layers and including an emissive layer having electroluminescent material and a reflective, semitransparent and conductive cathode include a metal or metal alloy or both provided over the plurality of organic layers, and the plurality of the hole-injecting layers being configured to reduce the drive voltage, and the reflectivity of the anode, the transparency of the cathode, and the thickness of the organic layers between the electrodes being selected to change the internal reflection of light.

A top-emission-type organic EL device comprising a substrate and at least a light-reflective anode, a bole-injection layer comprising first and second hole-injection layers, a hole-transport layer, a light-emitting layer, an electron-transport layer, and a light-transmitting cathode, which are sequentially laminated on the substrate, wherein the light-reflective anode side of hole-injection layer (the first hole-injection layer) is doped with a metallic oxide.

An organic light emitting device having a cathode, an anode and an organic layer structure disposed between the cathode and the anode, the organic layer structure comprising a hole injection layer doped with a p-type dopant, a hole transport layer, an emissive layer and an electron transport layer doped with an n-type dopant, wherein all of the layers in the organic layer structure are substantially made from the same organic host material. In particular, the organic host material is a bipolar organic material such as a derivative of fused aromatic rings. The emissive layer can be doped with a fluorescent dye or a phosphorescent dye.

An organic light emitting display device may include: a substrate having first, second and third pixel regions. A first electrode layer may be formed in each of the first, second and third pixel regions on the substrate. A hole injection layer may be formed over an entire surface of the substrate on the first electrode layers. A first hole transport layer may be formed on the first electrode layers in the first, second and third pixel region. A second hole transport layer may be formed on the first hole transport layer in any two adjacent pixel regions among the first, second and third pixel regions. A third hole transport layer may be formed on the second hole transport layer in any one of the two adjacent pixel region. A first, second and third organic emission layers may be formed on the first, second and third hole transport layer. A second electrode layer may be formed on the first, second and third organic emission layers. An OLED configured in this or a similar manner benefits from uniform operating characteristics and reducing tac time.

The invention claims an organic electroluminescence device with stable luminescence, which comprises a substrate, a first electrode layer, a functional layer and a second electrode. The first electrode layer is arranged on the surface of the substrate; the functional layer is arranged on the first electrode layer and the second electrode is arranged above the functional layer, wherein the functional layer at least comprises an electron injection layer, an electronic transmission layer, a luminous layer, a hole transmission layer and a hole injection layer; the luminous layer is a compound doping luminous layer consisting of a double-layer doping luminous layer; the double-layer doping luminous layer respectively uses electronic transmission materials and hole transmission materials as a main material. By adopting the conventional phosphorescence dyes and fluorescent dyes with excellent performance as doping object materials in the luminous layer, through adjusting the thickness and the components of the luminous layer, the invention prepares the organic electroluminescence device with stable luminescence and high performance to meet the use requirement on information display and illumination.

The invention discloses a nitride luminescent device and a production method thereof, which relate to a semiconductor luminescent device and provide a nitride luminescent device with an asymmetric coupled multi-quantum well structure being the active area. The device at least comprises an n-type electron injection layer, a p-type hole injection layer and a multi-quantum well active layer which is sandwiched between the n-type electron injection layer and the p-type hole injection layer, and the active layer is composed of asymmetric coupled quantum well structures. The barrier layer of the quantum well is thinner, thus being easy to realize the tunneling of current carriers; transition energy between ground-state energy level in the quantum wells is gradually changed; the quantum wells with high transition energy are close to the p-type hole injection layer; and the quantum wells with low transition energy are close to the n-type electron injection layer. The active area structure can enhance the tunneling transportation of the holes in the quantum well active area, simultaneously block the tunneling transportation of electrons in the quantum well active area, improve the uneven distribution of current carriers in the active area of the nitride luminescent device, reduce electron leakage and energy band filling effect, and realize high-efficiency luminescence.

In a light-emitting element including an EL layer between a pair of electrodes, a structure is formed in which the EL layer includes at least a first layer having a hole-injecting property (a hole-injecting layer) and a second layer having a hole-transporting property (a hole-transporting layer) between the electrode functioning as an anode and a third layer having a light-emitting property (a light-emitting layer), and the absolute value of the highest occupied molecular orbital level (HOMO level) of the second layer is larger than that of the first layer, so that the injection amount of holes from the electrode side which functions as an anode is suppressed, and thus luminous efficiency of the light-emitting element is increased.

A quantum dot light-emitting device includes a substrate, a first electrode, a hole injection layer (“HIL”), a hole transport layer (“HTL”), an emitting layer, an electron transport layer (“ETL”), a plurality of nanoplasmonic particles buried in the ETL, and a second electrode.

The invention discloses a CsPbX3 inorganic perovskite quantum dot light-emitting diode (LED) prepared through a solution method. ITO glass is spin-coated with a PEDOT:PSS hole injection layer, then a hole transmission layer and metal halide perovskite quantum dots are spin-coated, and an electron transmission layer is deposited through heat evaporation or magnetron sputtering; afterwards, metal electrodes of the LED are deposited through heat evaporation, and the CsPbX3 inorganic perovskite quantum dot LED which gives out light evenly is obtained. The light-emitting color of the prepared quantum dot LED can be adjusted by changing the halogen ratio of a quantum dot light-emitting layer material and can cover the entire visible spectrum range.

An object of the present invention is to provide an organic light-emitting display device using a number of organic light-emitting elements that emit lights of different colors, wherein the life of the organic light-emitting elements that emits light of a color having a short life can be prolonged. According to the present invention, a hole injection layer 7, an α-NPD vapor deposited film 8, an n doped electron transportation layer 11 and a p doped hole transportation layer 12, which are patterned to the same size as B sub-pixels, a DNA vapor deposited film 13, an electron injection layer 14 and an upper electrode 15 are formed on a lower electrode 5 in a B sub-pixel. The α-NPD vapor deposited film 8 and the DNA vapor deposited film 13 function as a blue light-emitting layer and exhibit the same properties as when a blue light-emitting element made up of a lower electrode 5, a hole injection layer 7, an α-NPD vapor deposited film 8 and an n doped electron transportation layer 11 and a blue light-emitting element made up of a p doped hole transportation layer 12, a DNA vapor deposited film 13, an electron injection layer 14 and an upper electrode 15 are connected in series. Therefore, it becomes possible to lower the value of a current required for certain brightness, and thus, the life can be prolonged.

The invention relates to a GaN-based light emitting diode and a preparation method thereof. An initial growth layer, a GaN buffer layer, an n-type electronic injection layer, a quantum well structure electronic emission layer, a quantum well structure light emitting active layer, a p-type AlInGaN electronic stopping layer and a p-type cavity injection layer are grown on an epitaxial substrate of the light emitting diode sequentially; in the quantum well structure of the electronic emission layer, the width of a forbidden band of the AlInGaN quantum well layer in the emission layer is greater than that of the forbidden band of the AlInGaN quantum well in the light emitting active layer; and the AlInGaN quantum well layer of the quantum well structure electronic emission layer is triangular. The GaN-based light emitting diode has the advantages that the quantum well structure electronic emission layer can improve the efficiency of an electronic injection light emitting active layer effectively; and by the triangular quantum well structure of the electronic emission layer, the polarization effect of the epitaxial substrate of the light emitting diode can be reduced, and the working voltage of the light emitting diode is decreased.

Compositions for use in hole transporting layers (HTLs) or hole injection layers (HILs) are provided, as well as methods of making the compositions and devices fabricated from the compositions. OLED devices can be made. The compositions comprise at least one conductive conjugated polymer, at least one semiconducting matrix component that is different from the conductive conjugated polymer, and an optional dopant, and are substantially free of an insulating matrix component.

In an organic EL device, a hole injection electrode (anode) made of a transparent electrode. A first hole injection layer made of CuPc, a second hole injection layer made of CFx, a hole transport layer and alight emitting layer each made of an organic material are formed in this order on the hole injection electrode. An electron injection electrode (cathode) is further formed on the light emitting layer. The first hole injection layer made of CuPc absorbs ultraviolet light, so that the organic EL device can be prevented from deterioration by the ultraviolet light. The second hole injection layer made of CFx promotes injection of holes, so that the initial drive voltage can be reduced.

Bidentate ligand, iridium complex and electro-generated phosphorescent device of iridium complex are disclosed. The bidentate contains cavity transmission group carbazole, the chemical formula of the iridium complex is Ir(C^N)2 (acac), acac= acetyl acetone. The electro-luminescent device consists of conductive glass lining bottom, cavity injecting layer, luminescent layer and cathodic layer. The doping material of luminescent layer is iridium complex of bidentate ligand. Its advantages include to balance transmission ability of current carrier, and to improve brightness and efficiency of device for organic electro-luminescent domain.

An organic light-emitting diode device and a method of manufacturing the organic light-emitting diode device are disclosed. The organic light-emitting diode device includes a thin film transistor, an anode electrode electrically connected to the thin film transistor, a hole injection layer formed on the anode electrode, an etch-out buffer layer formed on the hole injection layer, the etch-out buffer layer having a first hole that exposes the hole injection layer, a barrier rib formed on the etch-out buffer layer, the barrier rib having a second hole that overlaps the first hole, an organic emission layer formed on a portion of the hole injection layer which is exposed through the first hole and second hole, and a cathode electrode formed on the organic emission layer.

A white organic light emitting device includes: first and second electrodes formed to face each other on a substrate; a first stack configured with a hole injection layer, a first hole transportation layer, a first light emission layer and a first electron transportation layer which are stacked between the first and second electrodes; a second stack configured with a second hole transportation layer, a second light emission layer, a third light emission layer, a second electron transportation layer and an electron injection layer which are stacked between the first stack and the second electrode; and a charge generation layer interposed between the first and second stacks and configured to adjust a charge balance between the two stacks.

The invention belongs to the field of electroluminescent devices and particularly relates to a novel quantum dot luminescent device. The novel quantum dot luminescent device comprises an ITO anode, a hole injection layer, a hole transmission layer, a quantum dot luminescent layer, an electron transmission layer, an Al cathode and an insulating layer, wherein the insulating layer is arranged between the hole transmission layer and the quantum dot luminescent layer. The material of the insulating layer can be one or more of polymethyl methacrylate, calcium oxide, aluminum oxide, silicon oxide or gallium oxide and the like. Through the arrangement of the insulating layer, on one hand, injection of holes and electrons is effectively balanced; and on the other hand, the electric neutrality of quantum dots is ensured, so that the luminescence property of a blue-green quantum dot light-emitting diode is improved.