The invention provides a quantum dot electroluminescence device. The quantum dot electroluminescence device comprises a substrate, an anode, hole transport layers, a quantum dot luminescence layer, an electron transport layer and a cathode, wherein the anode is arranged on the substrate; the hole transport layers are arranged on the anode; the quantum dot luminescence layer is arranged on the hole transport layers; the electron transport layer is arranged on the quantum dot electroluminescence layer; the cathode is arranged on the electron transport layer; and the hole transport layers are P-type doped hole transport layers and / or the electron transport layer is an N-type doped electron transport layer. The invention also provides a manufacturing method of the quantum dot electroluminescence device. A gradient doping effect is formed in the hole transport layers, different band bending degrees of an interface are caused, a ladder energy level is formed, namely HOMO energy level is gradually increased from the anode to the quantum dot luminescence layer in sequence, and then the energy barrier of holes from the injection of the anode to the quantum dot luminescence layer is reduced, so that the luminescence efficiency of the device is improved.