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7850results about How to "Improve photoelectric conversion efficiency" patented technology

Electric conductive silver paste and manufacturing method thereof

The invention discloses electric conductive silver paste and a manufacturing method of the electric conductive silver paste. The electric conductive silver paste comprises, by mass percentage, 35 - 65 % of micron-sized silver powder, 1-10 % of nanometer-sized silver powder of or 1-20 % of nanometer-sized silver and other metal alloy powder, and 1-10 % of an organic carrier; for ceramics, solar cell silver paste comprises 2-15 % of unleaded glass powder, each component is manufactured in parts, weighed, mixed and stirred or mixed and rapidly scattered, and ultrasonic-vibrated or fine adjusted of viscosity of solvent, and therefore the electric conductive silver paste is obtained. Due to the fact that the nanometer-sized silver powder or the nanometer-sized silver alloy powder is mixed with the micron-sized silver powder, intensity of conductivity and a circuit is improved, adhesive force of crushing resistance and a base plate is improved, at the same time unleaded slurry good in thixotropy, low in contacting resistance and low in piece-needed slurry amount replaces lead slurry materials, the electric conductive silver paste is used for manufacturing crystalline silicon solar cells, improves photoelectric conversion efficiency, accords with environmental-protection ideas, and can be produced in large scales continuously.
Owner:SHENZHEN CHENGGONG CHEM

Photoelectric conversion element

A solid type dye-sensitized photoelectric conversion element which is excellent in photoelectric conversion efficiency and which can be manufactured at a low cost is disclosed. The photoelectric conversion element can be applied to a so-called wet type solar cell which does not use any electrolyte. The solar cell comprises a first electrode 3, a second electrode 6 arranged opposite to the first electrode 3, an electron transport layer 4 arranged between the first electrode 3 and the second electrode 6, a dye layer D which is in contact with the electron transport layer 4, a hole transport layer 5 arranged between the electron transport layer 4 and the second electrode 6 and being in contact with the dye layer D, and a barrier layer 8, and these elements are provided on a substrate 2. The barrier layer 8 constitutes short-circuit preventing or suppressing means for preventing or suppressing short-circuit between the first electrode 3 and the hole transport layer 5. The porosity of the barrier layer is made smaller than that of the electron transport layer 4. The barrier layer is formed into a film-like shape and arranged between the fist electrode 4 and the electron transport layer 4. The solar cell can accomplish excellent photoelectric conversion efficiency by the provision of such a barrier layer 8.
Owner:SEIKO EPSON CORP

Thin Film Solar Cell Having Photo-Luminescent Medium Coated Therein And Method For Fabricating The Same

A thin film solar cell having a photo-luminescent medium coated therein and a method for fabricating the same are provided. The thin film solar cell at least includes a transparent layer, a front electrode layer, a photoconductive layer, and a back electrode layer, which are sequentially stacked in that order from a light incident surface of the thin film solar cell. The transparent layer is a cover glass or a transparent substrate. The thin film solar cell further includes a photo-luminescent medium disposed on outer surface or inner surface of the transparent layer for absorbing the rest short wavelength light contained in the incident light and is then excited to emit a long wavelength light which can be effectively absorbed by the photoconductive layer. In such a way, the spectrum of the incident light is shifted, and thus an improved energy conversion efficiency is achieved.
Owner:NEXPOWER TECH

Method for manufacturing solar cell and solar cell, and method for manufacturing semiconductor device

The present invention is a method for manufacturing a solar cell by forming a p-n junction in a semiconductor substrate having a first conductivity type, wherein, at least: a first coating material containing a dopant and an agent for preventing a dopant from scattering, and a second coating material containing a dopant, are coated on the semiconductor substrate having the first conductivity type so that the second coating material may be brought into contact with at least the first coating material; and, a first diffusion layer formed by coating the first coating material, and a second diffusion layer formed by coating the second coating material the second diffusion layer having a conductivity is lower than that of the first diffusion layer are simultaneously formed by a diffusion heat treatment; a solar cell manufactured by the method; and a method for manufacturing a semiconductor device. It is therefore possible to provide the method for manufacturing the solar cell, which can manufacture the solar cell whose photoelectric conversion efficiency is improved at low cost and with a simple and easy method by suppressing surface recombination in a portion other than an electrode of a light-receiving surface and recombination within an emitter while obtaining ohmic contact; the solar cell manufactured by the method; and the method for manufacturing the semiconductor device.
Owner:SHIN-ETSU HANDOTAI CO LTD +2

Photoelectric conversion element and solid-state imaging device

A photoelectric conversion element is provided and includes: a pair of electrodes; a photoelectric conversion layer between the pair of electrodes; and a charge-blocking layer between one of the pair of the electrodes and the photoelectric conversion layer. The charge-blocking layer is capable of suppressing injection of a charge from the one of the pair of electrodes into the photoelectric conversion layer upon application of a voltage across the pair of electrodes, and the charge-blocking layer contains an insulating material and an electrically conductive material.
Owner:FUJIFILM CORP

Method of manufacturing photoelectric conversion device

A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.
Owner:SEMICON ENERGY LAB CO LTD
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