56results about How to "Inhibition of abnormal growth" patented technology

A photo-electricity generating device is produced through the steps of: immersing an electrode and an electroconductive substrate in an aqueous solution comprising nitrate ions and zinc ions, supplying a current passing through a gap between the electrode and the electroconductive substrate to form a first zinc oxide layer on the electroconductive substrate, etching the first zinc oxide layer, and forming a semiconductor layer on the zinc oxide layer. The zinc oxide layer may preferably be formed in two zinc oxide layers under different electrudeposition conditions. In this case, the etching step may preferably be performed between steps for forming these zinc oxide layers. The zinc oxide layer is provided with an unevenness at its surface suitable for constituting a light-confining layer of a resultant photo-electricity generating device.

An integrated optical device comprising a first semiconductor optical element provided on a first region of the main face of a substrate and a second semiconductor optical element provided on a second region and optically coupled to the first semiconductor optical element is fabricated. A first III-V compound semiconductor layer containing Al element is formed on the main face. A second III-V compound semiconductor layer for forming the first semiconductor optical element is then formed on the first III-V compound semiconductor layer. An etching mask M is formed on the first region. The end point of the dry etching is detected by using the etching mask M to dry-etch the second III-V compound semiconductor layer while detecting Al element. The first semiconductor optical element is thus formed. The second semiconductor optical element is formed on the second region.

The invention relates to a producing method of a polycrystalline diamond complex valve base of a pressure reducing valve, which is as follows: polycrystalline diamond complex (PDC) is formed by the high-pressure, high-temperature and original-site sintering of diamond powder on an basal body made of wolfram (W)-cobalt (Co) hard alloy, and the valve base made of the polycrystalline diamond complex is made by specific processing technology. Compared with the prior art, the polycrystalline diamond complex valve base of a pressure reducing valve has abrasion resistance, flushing-corrosion resistance and long service life, and in particular solves the bottleneck problem limiting the long-period and stable running of the producing device.

The invention discloses an anti-reduction dielectric ceramic material matched with a copper inner electrode and sintered under high frequency and low temperature. The dielectric ceramic material can be used for manufacturing multi-layer ceramic capacitors made of copper inner electrodes. The dielectric ceramic material comprises main crystal phase, modified additives and sintering fluxing agents,wherein the structure of the main crystal phase is MgxBa(1-x)ZrySi(1-y)O3, x is not less than 0.8 and not more than 0.95 and y is not less than 0.05 and not more than 0.2; the modified additive is one or more of MnO2, CaO, Li2O, Bi2O3 and TiO2; and the sintering fluxing agent is one or more of B2O3, SiO2, ZnO, CuO, K2O and BaO. The dielectric ceramic material meets the EIA standard, conforms to COG characteristic, has the characteristics of uniformity, uniform grain size distribution, high dispersibility and good forming process, conforms to the environment protection requirement and has excellent dielectric property.

The invention discloses a NiCuZn ferrite material and a preparation method thereof. The ferrite material comprises a main component and an additive. The main component is composed of 47-49 mol% of Fe2O3, 15-22 mol% of NiO, 25-30 mol% of ZnO, 4-7 mol% of CuO and 0.1-0.5 mol% of Co2O3. The additive is composed of A and B, wherein A accounts for 0.1-0.5 wt% of the whole material, and B accounts for 0.1-0.5 wt% of the whole material. A is BBSZ glass; and B is one or two of Ta2O5, SiO2 and SnO2. The nickel-zinc ferrite soft magnetic material disclosed by the invention has the characteristics of high initial permeability and low loss; under the frequency of 13.56 MHz, mu' is greater than 150, and mu' is less than 2; and the nickel-zinc ferrite soft magnetic material is very suitable for producing NFC (near field communication) ferrite magnetic sheets by an LTCC (low temperature co-fired ceramic) running technique.

The invention relates to the technical field of electrolytic copper foils, in particular to an additive for electrolytic copper foil, an ultra-low peak HVLP copper foil and a preparation method of theultra-low peak HVLP copper foil. The additive comprises at least four of an acid copper throwing agent, a terahydrozoline thioketone, a monosodium salt, a 3,3'-dithiobis-1-propanesulfonicacidisodiumsalt, a collagen and a cowhide polypeptide as well as chloridion. The additive for the electrolytic copper foil, the ultra-low peak HVLP copper foil and the preparation method of the ultra-low peak HVLP copper foil have the advantages of low roughness, excellent mechanical property and good oxidation resistance.

The invention discloses a polycrystal silicon preparation method, which comprises the steps of: introducing a small amount of N2O into a reaction chamber body as a doping gas when carrying out a polycrystal silicon deposition process, so that the N2O reacts with SiH4 serving as a process gas to generate SiO2; and doping polycrystal silicon, wherein excessive part of the SiH4 continues to decompose to generate polycrystal silicon. The presence of the SiO2 inhibits abnormal grain growth in the polycrystal silicon deposition process, thus size of polycrystal silicon grains can be reduced, grain uniformity can be increased and surface evenness can be improved, thereby eliminating the problem of polycrystal silicon particle production.

The invention discloses a lead-free compact strontium postasium niobate textured ceramic and a preparation method thereof. The preparation method of the lead-free compact strontium postasium niobate textured ceramic comprises the following steps: using acicular strontium postasium niobate microcrystalline powder, a sintering aid, an organic solvent and a binder as raw materials, synthesizing acicular ceramic strontium postasium niobate microcrystalline powder by adopting a molten-salt growth method; mixing the acicular strontium postasium niobate microcrystalline powder with the sintering aid, the organic solvent and the binder to obtain slurry with certain viscosity; casting the slurry into films; obtaining biscuit sample wafers through laminating, hot isostatic pressing and cutting of the films; after debinding, sintering to finally obtain the lead-free compact strontium postasium niobate textured ceramic. The lead-free compact strontium postasium niobate textured ceramic and the preparation method have the advantages that the process is simple; the formulation deviation is small; the lead-free compact strontium postasium niobate textured ceramic is good in repeatability and stability; existing chip-type electronic component producing equipment can be used; the lead-free compact strontium postasium niobate textured ceramic and the preparation method are easy to industrialize.

The invention provides a manufacturing method of a low-voltage and high-energy zinc oxide resistor disc. The manufacturing method comprises the following steps of: adding the following materials except for the main material zinc oxide in mole percentage: 0.2-0.6% of antimony trixoide, 0.8-1.5% of titanium dioxide, 0.5-1.3% of bismuth trioxide, 0.8-2.1% of cobalt sesquioxide, 0.6-1.3% of manganese carbonate, 0.001-0.003% of silver nitrate, 0.3-0.6% of stannic oxide and 0.001-0.006% of boric acid; and then, stirring and grinding the added materials, mixing the added materials with the main material, dispersing and grinding the mixture, carrying out spray granulation, treating water in the mixture, forming a blank, removing a binding agent and sintering to prepare a finished product, removing the binding agent in the pressed blank at the temperature of 420 DEG C, sintering at the temperature of 1050-1150 DEG C, and preserving the heat for 3-6h, wherein the reaction time for removing the binding agent is 20h. The resistor disc prepared by using the manufacturing method provided by the invention is low in potential gradient and high in flow capacity.

Provided is an aluminum alloy conductor wire for use as a conductor in electrical wiring that has improved pressure-bonding reliability while ensuring excellent strength. This aluminum alloy conductor wire has a composition that contains 0.1-1.0 mass% of Mg, 0.1-1.20 mass% of Si, 0.01-1.40 mass% of Fe, 0-0.100 mass% of Ti, 0-0.030 mass% of B, 0-1.00 mass% of Cu, 0-0.50 mass% of Ag, 0-0.50 mass% of Au, 0-1.00 mass% of Mn, 0-1.00 mass% of Cr, 0-0.50 mass% of Zr, 0-0.50 mass% of Hf, 0-0.50 mass% of V, 0-0.50 mass% of Sc, 0-0.50 mass% of Co, and 0-0.50 mass% of Ni, the balance being Al and unavoidable impurities, the grain diameter being 0.5-5.0 [mu]m, and the density of compounds that contain Fe being 1-300 / 10,000 [mu]m<2>.

The invention relates to spinel castables for a coal water slurry gasification furnace and a using method thereof. The spinel castables comprise, by weight, 55-72% of magnesium aluminate spinel particles, 0-15% of tabular corundum particles, 4-10% of magnesium aluminate spinel fine powder, 2-5% of magnesium aluminate spinel micro powder, 4-6% of alpha-Al2O3 micro powder, 0.5-1.5% of Y2O3 micro powder, 0.5-1.5% of CeO2 micro powder, 0.2-1% of TiO2 micro powder, 1-7% of pure calcium aluminate cement, 2-12% of CMA cement, 0.03-0.1% anti-explosion fibers, and 0.1-0.3% of FS series water reducer. The using method comprises the steps of pouring water which accounts for 4.8-6.2%, by weight, of the castables in the castables, stirring evenly, and carrying out forming, conservation, demoulding and baking. Products prepared through the spinel castables for the coal water slurry gasification furnace have the advantages of being environmentally friendly, good in coal slag permeation resistance and anti-corrosion performance, capable of saving energy, high in strength and good in thermal shock stability, and thus demands of the production of the coal water slurry gasification furnace are met.

The invention provides a Korean drug compound extract for preventing and treating diabetic nephropathy as well as a preparation method and application of the Korean drug compound extract. The extract mainly comprises the following active ingredients in parts by weight: 100 parts of total polysaccharides, 5-15 parts of general flavones and 3-12 parts of total saponins. The extract comprises the following raw medicinal materials in parts by weight: 2-4 parts of radix puerariae, 2-4 parts of scutellaria baicalensis, 2-4 parts of Chinese yam, 2-4 parts of ligusticum, 1-2 parts of schisandra chinensis, 1-2 parts of platycodon grandiflorum, 1-2 parts of rattletop, 1-2 parts of radix angelicae and 1-2 parts of tuber of dwarf lilyturf. The preparation method comprises the following steps: extracting the raw medicinal materials by taking 20-40% of ethanol as a solvent; refining the extracting solution by adopting a ZTC 1+1 natural clarifying agent, wherein the usage amount of the component B is 5-9%; eluting the refined solution through macroporous resin by using 10-50% of ethanol and 3-5BV; and concentrating and drying the eluent, thereby obtaining the extract. Experiments prove that the extract disclosed by the invention has pharmacological activity and drug action for preventing and treating diabetic nephropathy.

The invention discloses a styrene-based compound, which is at least a 5-(4-(4-(3,5-dyhydroxystyryl)phenoxyl)styryl)-1,3-benzenediol compound of the following structural formula. The invention also discloses a preparation method and application of the 5-(4-(4-(3,5-dyhydroxystyryl)phenoxyl)styryl)-1,3-benzenediol compound of the structural formula. The 5-(4-(4-(3,5-dyhydroxystyryl)phenoxyl)styryl)-1,3-benzenediol compound disclosed by the invention is used for inhibiting the abnormal growth of B-cells by lowering AKT / mTOR signal conduction. The formula is shown in the specification.

A semiconductor device having a substrate and, superimposed thereon, a ferroelectric capacitor. The ferroelectric capacitor is composed of an inferior electrode and, sequentially superimposed thereon, a ferroelectric film and a superior electrode. The superior electrode is composed of a first layer of oxide whose stoichiometric composition is represented by the chemical formula AOx1 in which x1 is a composition parameter and whose actual composition is represented by the chemical formula AOx2 in which x2 is a composition parameter and, sequentially superimposed on the first layer, a second layer of oxidewhose stoichiometric composition is represented by the chemical formula BOy1 in which y1 is a composition parameter and whose actual composition is represented by the chemical formula BOy2 in which y2 is a composition parameter and a metal layer. The second layer has a proportion of oxidation higher than that of the first layer. The composition parameters x1, x2, y1 and y2 satisfy the relationship y2 / y1 > x2 / x1. The second layer at its interface with the metal layer is provided with an interfacial layer of stoichiometric compositionwith an increased oxidation proportion.

The invention relates to the field of traditional Chinese medicinal starters and health foods, in particular to an antioxidant and antineoplastic traditional Chinese medicinal starter and a preparation method thereof. The traditional Chinese medicinal starter is prepared from radix pseudostellariae, semen coicis, agaricus bisporus, wolfberry fruit, fiveleaf gynostemma herb, radix ginseng, radix rubiae, fructus gardeniae, selenium, chromium and zinc through the process steps of aerobic culture, extraction, fermentation, sterilization, purification, concentration and the like, and is preferablyin an oral liquid dosage form. Through addition of the inorganic trace elements of selenium and zinc into the agaricus bisporus, and aseptic culture, inorganic selenium and inorganic zinc are effectively converted into organic selenium and organic zinc, the organic selenium and organic zinc are enriched in agaricus bisporus sporocarp, the agaricus bisporus sporocarp is fermented together with Chinese medicinal herbs, and the fermentation product is extracted to obtain mixed microparticles which organically combine fungal polysaccharides with trace elements. The mixed microparticles have good oxidation resistance and cancer cell growth inhibition function. As proved by tests, compared with existing products, the traditional Chinese medicinal starter is remarkably reduced in toxic and side effects, and is greatly improved in antioxidant and anti-tumor effects.

The invention relates to a preparation method of a self-reinforced silicon carbide ceramic material, and belongs to the technical field of ceramic material preparation, and the preparation method comprises the following steps: weighing alpha-SiC powder, beta-SiC powder, B4C powder and carbon according to a mass percentage of (92-94%): (1-3%): (1-3%): (2-4%); performing uniform mixing, drying and sieving the raw materials, and performing compression molding to obtain a biscuit; placing the biscuit in a vacuum tube furnace to be subjected to carbonization treatment, wherein the carbonization temperature ranges from 600 DEG C to 900 DEG C; and carrying out pressureless sintering on the carbonized sample, and performing cooling to obtain the self-reinforced silicon carbide ceramic material. According to the method, beta-SiC powder with different particle sizes is compounded into alpha-SiC powder, so the solid-phase pressureless sintering silicon carbide ceramic material with high density, high strength, high hardness and uniform structure is prepared, and the comprehensive performance of the pressureless sintering silicon carbide ceramic material is improved.

A film forming method is provided with a substrate placing step wherein a substrate is placed in a process chamber in an airtight status; a first film forming step wherein the process chamber is supplied with water vapor and a material gas including an organic compound of copper, and an adhered layer of copper is formed on the substrate; an exhaust step wherein the water vapor and the material gas in the process chamber are exhausted; and a second film forming step wherein the process chamber is resupplied with only the material gas and a copper film is further formed on the adhered layer.

A polycrystalline diamond sintered material tool includes: a cemented carbide substrate, which is mainly composed of WC and includes Co; and a diamond layer containing a metal catalyst made of Co provided on the cemented carbide substrate. The average layer thickness of a Co rich layer formed in an interface between the cemented carbide substrate and the diamond layer is 30 μm or less. CMAX / CDIA is 2 or less when CDIA is an average content of Co included in the diamond layer and CMAX is a peak value of a CO content in the Co rich layer. D / DO is less than 2 when D is an average grain size of WC particles in a region from the interface between the cemented carbide substrate and the diamond layer to 50 μm toward an inside of the cemented carbide substrate; and DO is an average grain size of WC particles.

The present invention provides a technology for suppressing occurrence of abnormality on a surface of a silicon film other than a single crystal film formed on a wafer. A silicon film is formed on a wafer in step S1 and an oxide film functioning as an abnormality suppression film for suppressing the surface abnormality is formed on the silicon surface on the wafer formed in step S10. The abnormality suppression film is formed by the surface oxidation of the polycrystalline silicon using chemical solution such as ozone water or hydrogen peroxide solution. After forming the abnormality suppression film on the silicon surface, the abnormality suppression film, for example, an abnormal growth suppression film is removed according to need, and then the process of patterning the silicon film and forming an insulating oxide film is performed.

The invention belongs to the technical field of ferrites, and particularly relates to a ferrite magnetic material which comprises main components, auxiliary components and additives, the main components comprise Fe2O3, Mo2O3, Yb2O3, NiO and ZnO, and the auxiliary components comprise WO3 and Nd2O3. Based on the main component amount, the content of Fe2O3 in the main components is 48-52 mol%, the content of Mo2O3 in the main components is 16-24 mol%, the content of Yb2O3 in the main components is 12-20 mol%, the content of NiO in the main components is 9-15 mol%, and the content of ZnO in the main components is 6-10 mol%. Based on the weight of the main components, the content of WO3 is 0.1-1wt%, and the content of Nd2O3 is 0.1-1wt%. The additives are composed of V2O5, SiO2 and CuO. The ferrite material disclosed by the invention has higher magnetic conductivity and lower magnetic loss at the same time under 13.56 MHz, and meets the application requirements of NFC.

The invention discloses a preparation method of a heterogeneous core-shell structure toughening agent, an aluminum oxide ceramic material as well as a preparation method and application. The preparation method of the heterogeneous core-shell structure toughening agent comprises the following steps: 1) preparing rare earth metal nitrate, deionized water and absolute ethyl alcohol into a rare earth cation mixed solution with a certain concentration; (2) pouring nano aluminum oxide powder into the rare earth cation mixed solution, fully mixing and then carrying out ball milling; then, drying the obtained suspension in a vacuum oven to remove water and ethanol; and 3) grinding and refining the dried powder, sieving, and calcining in a muffle furnace to obtain the heterogeneous core-shell structure toughening agent. Raw materials of the aluminum oxide ceramic material contain a heterogeneous core-shell structure toughening agent. The prepared toughening agent can effectively improve the toughness, strength and the like of the aluminum oxide ceramic material, the material processing performance is good, and the ceramic product yield is greatly improved.

An integrated optical device comprising a first semiconductor optical element provided on a first region of the main face of a substrate and a second semiconductor optical element provided on a second region and optically coupled to the first semiconductor optical element is fabricated. A first III-V compound semiconductor layer containing Al element is formed on the main face. A second III-V compound semiconductor layer for forming the first semiconductor optical element is then formed on the first III-V compound semiconductor layer. An etching mask M is formed on the first region. The end point of the dry etching is detected by using the etching mask M to dry-etch the second III-V compound semiconductor layer while detecting Al element. The first semiconductor optical element is thus formed. The second semiconductor optical element is formed on the second region.

The invention relates to a crystalline light transmitting porcelain plate painting showing structure and a preparation process thereof. The showing structure comprises a lamp box with an opening in the upper portion; a light source is arranged in the lamp box; a power source switch is arranged on the outer side of the lamp box; a glass plate layer for closing is fixedly arranged on the lamp box opening, and a porcelain plate painting adheres to the glass plate layer through a light transmitting shadowless glue layer; and the lower surface of the glass plate layer is subjected to etching and multi-angle polishing to form refracting faces different in curvature so that light ray can be irradiated to the refracting faces to form different refracting paths, and then the light source is projected to the porcelain plate painting through the glass plate layer and the shadowless glue layer at multiple angle to achieve different light transmitting effects, wherein the refracting faces are formed by combining curved surfaces and inclined surfaces. According to the crystalline light transmitting porcelain plate painting showing structure and the preparation process thereof, by arranging the lamp box and adhering the porcelain plate painting to a glass plate above the lamp box through shadowless glue, the showing structure is fine and smooth in porcelain, a bone porcelain plate blank is thin, weight is small, good light transmitting performance is achieved, a foggy feeling is achieved, and very high artistic quality is achieved.

A semiconductor device includes: a semiconductor substrate; a semiconductor element formed on the semiconductor substrate and containing a gate electrode; impurity diffusion layers formed at both sides, in a cross-section in a gate length direction of the gate electrode, of a region on which the semiconductor element is formed of the semiconductor substrate; first silicide films formed respectively at the surface of the impurity diffusion layers, composed of a silicide compound of a first metal; and a second silicide film, formed at least at the surface of the gate electrode, composed of a silicide compound of a second metal different to the first metal. The silicide compound of the second metal has a silicidation temperature lower than the silicidation temperature of the silicide compound of the first metal.

The invention discloses anti-corrosion Ta and Cr containing zinc alloy applicable to active steel hot dipping zinc plating and a processing process thereof. The zinc alloy is prepared from the following ingredients in percentage by weight: 0.5 to 0.8 weight percent of Sr, 0.4 to 0.5 weight percent of Rh, 1.2 to 1.5 weight percent of Ta, 2.0 to 3.0 weight percent of Cr, 1.0 to 2.0 weight percent ofNi, 0.5 to 0.8 weight percent of Ge and the balance of zinc. The zinc alloy is favorable for the development of the zinc alloy for the active steel high-alloy hot dipping zinc plating; the excessiveroughening and the growth of compounds between the metals of zinc plating layers can be greatly reduced; the loose phase growth is obviously delayed.

A film forming method is provided with a substrate placing step wherein a substrate is placed in a process chamber in an airtight status; a first film forming step wherein the process chamber is supplied with water vapor and a material gas including an organic compound of copper, and an adhered layer of copper is formed on the substrate; an exhaust step wherein the water vapor and the material gas in the process chamber are exhausted; and a second film forming step wherein the process chamber is resupplied with only the material gas and a copper film is further formed on the adhered layer.

The invention discloses a mildew-proof environment-friendly water-based color paste suitable for color mixing of an automatic color mixer and a preparation method of the mildew-proof environment-friendly water-based color paste. The color paste comprises: 12.0 to 48.0 parts by weight of a pigment; 6.0 to 12.0 parts by weight of a cosolvent; 2.0-6.5 parts of a wetting agent, 4.0-15.0 parts of a dispersing agent, 0.5-1.5 parts of a mildew-proof bactericide composition, 0.1-0.5 part of a pH value regulator, 0.2-1.0 part of a defoaming agent, 0.5-4.0 parts of a thickening agent and 10.0-30.0 partsof water; wherein the mildew-proof bactericide composition comprises a first mildew-proof bactericide and a second mildew-proof bactericide, and the effective component of the first mildew-proof bactericide is a pyrithione mildewproof bactericide. The mildew-proof environment-friendly water-based color paste is safe and environment-friendly, has broad-spectrum and long-acting mildewproof and antibacterial effects, and is suitable for being used in an automatic color mixer.

The invention discloses a NiCuZn ferrite material and a preparation method thereof. The ferrite material comprises a main component and an additive. The main component is composed of 47-49 mol% of Fe2O3, 15-22 mol% of NiO, 25-30 mol% of ZnO, 4-7 mol% of CuO and 0.1-0.5 mol% of Co2O3. The additive is composed of A and B, wherein A accounts for 0.1-0.5 wt% of the whole material, and B accounts for 0.1-0.5 wt% of the whole material. A is BBSZ glass; and B is one or two of Ta2O5, SiO2 and SnO2. The nickel-zinc ferrite soft magnetic material disclosed by the invention has the characteristics of high initial permeability and low loss; under the frequency of 13.56 MHz, mu' is greater than 150, and mu' is less than 2; and the nickel-zinc ferrite soft magnetic material is very suitable for producing NFC (near field communication) ferrite magnetic sheets by an LTCC (low temperature co-fired ceramic) running technique.

The invention discloses a high temperature resistant boron nitride-cerium feldspar ceramic matrix composite material and a preparation method thereof, and relates to the technical field of preparationof ceramic matrix composite materials. The preparation method comprises the steps of S1, weighing cerium feldspar powder to be mixed with hexagonal boron nitride powder to obtain a raw material; S2,ball-milling the raw material to obtain ball-milled powder; S3, stirring and drying the ball-milled powder to obtain raw material powder; S4, placing the raw material powder into a graphite mold, andcold-pressing is performed to obtain a bulk material; S5, performing discharge plasma sintering on the bulk material to obtain the high temperature resistant boron nitride-cerium feldspar ceramic matrix composite material. The preparation method of the high temperature resistant boron nitride-cerium feldspar ceramic matrix composite material has the advantages that the prepared boron nitride-cerium feldspar ceramic matrix composite material not only has good mechanical and processability performance by introducing boron nitride into cerium feldspar, but also has good dielectric and high temperature resistance performance.

The invention provides a positive electrode material of a metal halide battery. The positive electrode material of the metal halide battery is characterized in that a two-dimensional flaky material graphene and / or MXene are / is introduced into the positive electrode material of an existing metal halide battery in order to replace part of excessive electro-active metal. According to the positive electrode material of the metal halide battery, the replaced substance is introduced, so that the quantity of added electro-active metal in positive electrode components is decreased; and moreover, the replaced substance is good in heat and electricity conducting performances, so that high electricity and heat conducting performances are kept in a positive electrode cavity of the battery at medium- and low-temperature of 150-250 DEG C, and as a result, the effective utilization rate of the electro-active metal is increased; and meanwhile, the contact probability of electro-active metal particlesis decreased, so that the abnormal growth of the electro-active metal particles and alkali halide in circulating process can be inhibited, and as a result, the cycle life of the battery is obviously prolonged.