26186results about How to "Avoid cracking" patented technology

An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.

An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.

An inductive power transfer (IPT) pad and system for the charging of electric and hybid electric vehicles. The batter of such a vehicle can be selectively coupled to a high power electrical supply for fast charging or a lower power electrical supply for charging using IPT. The batteries of the vehicles are used in a system to control the load demand in an electricity network through variations of the frequency of power supplied.

The substrate processing apparatus according to the present invention is aimed to stably and efficiently perform a deposition process on a substrate W. The substrate processing apparatus supports the substrate W in a position facing a heater portion and thus rotates a holding member holding the substrate W. Furthermore, the heating portion houses a SiC heater and a heat reflecting member in an internal portion of a quartz bell jar made of transparent quartz, and depressurizes an internal space of a processing vessel and an internal space of the quartz bell jar at the same time; thereby allowing the thickness of the quartz bell jar to be thinner, and thus improving thermal conductivity of heat from the SiC heater and preventing contamination by the SiC heater.

A gas inlet manifold for a plasma chamber having a perforated gas distribution plate suspended by flexible side walls. The flexible suspension minimizes mechanical stress due to thermal expansion of the gas distribution plate. In another aspect, the suspension provides thermal isolation between the gas distribution plate and other components of the chamber.

The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film. As a result, a crack due to stress hardly occurs.

A multi-layered semiconductor structure with free areas limiting the placement of test keys. First and second scribe lines intersect to define one corner point of a die. The first and second scribe lines are part of the multilayered structure and at least one layer of the multi-layer structure is a low-k dielectric layer. Free area A1 is defined on the first scribe line and is defined by the equation A1=D1×S1, where D1 is the distance from the corner point of the die toward the main area of the die, and S1 is the width of the first scribe line. Free area AS is defined at the intersection of the first scribe line and the second scribe line adjacent the die and is defined by the equation AS=S1×S2, where S2 is the width of the second scribe line.

A method of long bone strengthening and a composite implant for such strengthening. Also disclosed is a kit for building a composite implant in-situ in long bones. In an exemplary embodiment of the invention, the implant comprises a plurality of rigid tensile rods, in matrix of cement and surrounded by a partially porous bag.

A stack package comprises a substrate having a circuit pattern; at least two semiconductor chips stacked on the substrate, having a plurality of through-via interconnection plugs and a plurality of guard rings which surround the respective through-via interconnection plugs, and connected with each other by the medium of the through-via interconnection plugs; a molding material for molding an upper surface of the substrate including the stacked semiconductor chips; and solder balls mounted to a lower surface of the substrate.

The invention relates to an auxiliary material for casting a mould, in particular to a casting mould water-based coating formulation for a sand mould or an expendable pattern casting (EPC), and a process for preparing the same. The casting mould water-based coating formulation consists of refractory powder, a suspending agent, a bonding agent, a surfactant, a defoaming agent, a corrosion remover and water. The process comprises the following steps: adding the suspending agent to the water directly, and mixing and dispersing the mixture in a high speed dispersion machine; adding auxiliary agents including the defoaming agent, the surfactant, the corrosion remover, and the like to the water, and mixing the auxiliary agents; adding the refractory powder to the mixture to be mixed; and adding the bonding agent to the mixture to be mixed, and then adding water to adjust the coating until the coating has the thickness in a using state to obtain the finished product. The coating prepared by the process has the effects that the coating ensures that a high-density low-viscosity coating has excellent suspension property and storage stability, a coating layer is not easy to crack after drying, the coating is advantageous to improve the capacity of the coating to resist high temperature metal corrosion, and the like.

A honeycomb structured body in which a plurality of porous ceramic members are combined with one another by interposing an adhesive layer, each of the porous ceramic members having a plurality of cells placed in parallel with one another in a longitudinal direction with a cell wall therebetween and an outer edgewall on the outer edge surface thereof, wherein the thickness of the outer edge wall of the porous ceramic member is greater than the thickness of the cell wall, and each of the porous ceramic members has a filling body which is provided so as to fill in at least one corner portion of at least one outermost cell of the porous ceramic members.

A computer disk drive (22) having a write head (52) which includes a coil (38), a photoresist insulation layer (66) formed on the coil (38), and an insulation shell layer (102) which is formed on the photoresist insulation layer (66). In the first preferred embodiment (100), the top pole (42) of the write head (52) is formed on the insulation shell layer (102).In the second preferred embodiment (200), the disk drive write gap (76) is formed on the insulation shell layer (102) and the top pole (42) of the write head (52) is formed on the write gap (76).The insulation shell layers (102) in both embodiments are preferably made of dielectric materials (103).Methods of fabrication for these embodiments are also disclosed.

By providing a non-contact means and / or a non-contact space between electric connecting members and an underlaying material and / or a substrate material and / or a rear material, the temporal degradation of a solar cell module can be prevented which is caused by a contact between the electric connecting members for the module and the underlaying material and / or the substrate material and / or the rear material.

It is an object of the present invention to provide a manufacturing apparatus that reduces a manufacturing cost by enhancing efficiency in the use of an EL material and that is provided with a vapor deposition apparatus which is one of manufacturing apparatuses superior in uniformity in forming an EL layer and in throughput in the case of manufacturing a full-color flat panel display using emission colors of red, green, and blue. According to one feature of the invention, a mask having a small opening with respect to a desired vapor deposition region is used, and the mask is moved accurately. Accordingly, a desired vapor deposition region is vapor deposited entirely. In addition, a vapor deposition method is not limited to movement of a mask, and it is preferable that a mask and a substrate move relatively, for example, the substrate may be moved at a μm level with the mask fixed.

A packaging assembly for semiconductor devices and a method for making such packaging is described. The invention provides a non-Pb bump design during a new flip-chip method of packaging. The design uses special conductive materials in a stud form, rather than a solder ball containing Pb. This configuration maintains a desirable solder thickness between the die and the leadframe and forms a high standoff by restricting solder wettabilty on the leadframe side. This configuration also absorbs any stress and protects the die from cracking. The invention also provides methods for making such semiconductor packages.

A method of forming a crack prevention ring at the exterior edge of an integrated circuit to prevent delamination and cracking during the separation of the integrated circuits into individual die. The crack prevention ring extends vertically into a semiconductor workpiece to at least a metallization layer of the integrated circuit. The crack prevention ring may be formed simultaneously with the formation of test pads of the integrated circuits. The crack prevention ring may be partially or completely filled with conductive material. An air pocket may be formed within the crack prevention ring beneath a passivation layer of the integrated circuit. The crack prevention ring may be removed during the singulation process. An optional seal ring may be formed between the crack prevention ring and the integrated circuit.

A needle fixture of a probe card and a needle fixing method in semiconductor inspection equipment include a needle fixture of a probe card in semiconductor inspection equipment including a printed circuit board; a needle fixture installed in the printed circuit board; a resin unit affixing a probe needle to the needle fixture using an adhesive; and a separation preventer for preventing separation of the resin unit from the needle fixture, wherein the separation preventer includes: a plurality of notches formed along a bottom surface of the needle fixture; and the adhesive filling the plurality of notches.

A flip chip-type nitride semiconductor light emitting diode includes a light transmittance substrate, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer and a mesh-type DBR reflecting layer. The mesh-type DBR reflecting layer has a plurality of open regions. The mesh-type DBR reflecting layer is composed of first and second nitride layers having different Al content. The first and second nitride layers are alternately stacked several times to form the mesh-type DBR reflecting layer. An ohmic contact layer is formed on the mesh-type DBR reflecting layer and on the p-type nitride semiconductor layer.

An AlN layer having a surface of a texture structure is formed on a sapphire substrate. Then, a growth suppressing material layer is formed on the AlN layer so that the AlN layer is partially exposed to the outside. Then, group III nitride compound semiconductor layers are grown on the AlN layer and on the growth suppressing material layer by execution of an epitaxial lateral overgrowth method. Thus, a group III nitride compound semiconductor device is produced. An undercoat layer having convex portions each shaped like a truncated hexagonal pyramid is formed on a substrate. Group III nitride compound semiconductor layers having a device function are laminated successively on the undercoat layer.

A thermally enhanced semiconductor package with EMI (electric and magnetic interference) shielding is provided in which a chip is mounted on and electrically connected to a surface of a substrate, and a thermally conductive member is stacked on the chip and electrically coupled to the surface of the substrate by bonding wires. An encapsulant is formed and encapsulates the chip, thermally conductive member, and bonding wires. A plurality of solder balls are implanted on an opposite surface of the substrate. The thermally conductive member is grounded via the bonding wires, substrate, and solder balls, and provides an EMI shielding effect for the chip to protect the chip against external electric and magnetic interference. The thermally conductive member has a coefficient of thermal expansion similar to that of the chip, and reduces thermal stress exerted on the chip and enhances mechanical strength of the chip to thereby prevent chip cracks.

A method of growing an AlGaN semiconductor material utilizes an excess of Ga above the stoichiometric amount typically used. The excess Ga results in the formation of band structure potential fluctuations that improve the efficiency of radiative recombination and increase light generation of optoelectronic devices, in particular ultraviolet light emitting diodes, made using the method. Several improvements in UV LED design and performance are also provided for use together with the excess Ga growth method. Devices made with the method can be used for water purification, surface sterilization, communications, and data storage and retrieval.

An article of manufacture and method of making and implanting the article made of a polyolefin star or linear copolymer are disclosed in which the polyolefin copolymer is biostable and crack-resistant when implanted in vivo. The polyolefin copolymer is the reaction product of a rubbery component which when homopolymerized produces a polymer having a low level of hardness, and a hardening component which when homopolymerized produces a polymer having a high level of hardness. The polyolefin copolymer is elastomeric, has a hardness intermediate the low and high levels of hardness, and has a backbone in which the majority of polymer linkages along the copolymer chain are alternating quaternary and secondary carbon atoms.

The pore forming material for a porous body of the present invention comprises organic polymer particles and inorganic particles. As the embodiment thereof, there may be mentioned one having a structure in which the inorganic particles are contained in the organic polymer particles, and an aggregate body of the organic polymer particles and the inorganic particles. The inorganic particles may be inorganic micro-balloons, and the organic polymer particles may be organic micro-balloons.

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

A method for producing reinforced titanium alloy wire, comprising forming a billet of titanium alloy with grains of a precipitated discontinuous reinforcement material such as TiB and / or TiC. The billet may be formed by the hot consolidation of a titanium alloy powder formed by gas atomization. The billet is then hot formed to reduce it to rod or coil form. The rod or coil is then subjected to successive cold drawing operations to form a reinforced titanium alloy wire of reduced diameter. The cold drawing includes periodic annealing operations under low oxygen conditions to relieve work hardening and to recrystallize the reinforcement material grains to reduce the size thereof.

The present invention provides a flip chip-type nitride semiconductor light emitting diode. The nitride semiconductor light emitting diode comprises a light transmittance substrate, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer and a mesh-type DBR reflecting layer. The mesh-type DBR reflecting layer has a plurality of open regions. The mesh-type DBR reflecting layer is composed of first and second nitride layers having different Al content. The first and second nitride layers are alternately stacked several times to form the mesh-type DBR reflecting layer. An ohmic contact layer is formed on the mesh-type DBR reflecting layer and on the p-type nitride semiconductor layer.

The invention discloses an entrance guard control method and an entrance guard control system. The method provided by the invention comprises the following steps of: obtaining a door-opening request and a user account number which are input by a user by an entrance guard switch apparatus and sending the door-opening request and the user account number to an entrance guard managing system at the far end; storing a corresponding relation between the user account number and a user mobile terminal sign by the entrance guard managing system; responding the entrance guard managing system to the door-opening request to generate a password and a check code which correspond to the user account number; sending the password to a mobile terminal corresponding to the user account number and sending the check code to the entrance guard switch apparatus according to the corresponding relation between the user account number and the user mobile terminal sign; obtaining the password input by the user by the entrance guard switch apparatus; utilizing the check code to check the password and executing a door-opening operation after the check is passed. The technical scheme provided by the invention is as follows: the entrant does not need to carry a key substitution and also does not need to remember complicated password so that the system provided by the invention is convenient for user to use and the problem of losing the password is not existed; and the password is not easy to be cracked so that the safety is high.

The invention discloses a touch screen mobile phone based on fingerprint identification and a login unlocking method for the touch screen mobile phone. A fingerprint acquirer is arranged behind a touch screen sensing controller. When the touch screen mobile phone is logged in and unlocked, the login unlocking method comprises the following steps of: 1, judging whether a fingerprint sample needs to be set, and if so, providing a fingerprint input frame on a touch screen, collecting fingerprint data acquired in the fingerprint input frame and storing the fingerprint data as the fingerprint sample, otherwise, entering into the step 2 for checking; 2, collecting the fingerprint data acquired in the fingerprint input frame provided on the touch screen, comparing the fingerprint data acquired in the fingerprint input frame with the fingerprint sample, judging whether the fingerprint data is matched with the fingerprint sample, and if the fingerprint data is matched with the fingerprint sample, entering a system of the mobile phone, otherwise, stepping into the step 3; 3, judging whether the number of checking times reaches a preset checking time upper limit, and if the number of checking times reaches the preset checking time upper limit, entering into the step 4, otherwise, returning to the step 2 for rechecking; and 4, indicating a user to input a personal identification number (PIN) code of the mobile phone, judging whether the PIN code of the mobile phone is correct, and if the PIN code of the mobile is correct, entering into the system of the mobile phone, otherwise, forbidding the user to enter into the system of the mobile phone.