4315results about How to "Prevent degradation" patented technology

Provided is a method of producing a light-emitting apparatus having a field effect transistor for driving an organic EL device, the field effect transistor including an oxide semiconductor containing at least one element selected from In and Zn, the method including the steps of: forming a field effect transistor on a substrate; forming an insulating layer; forming a lower electrode on the insulating layer; forming an organic layer for constituting an organic EL device on the lower electrode; forming an upper electrode on the organic layer; and after the step of forming the semiconductor layer of the field effect transistor and before the step of forming the organic layer, performing heat treatment such that an amount of a component that is desorbable as H2O from the field effect transistor during the step of forming the organic layer is less than 10−5 g / m2.

An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. A third passivation film 45 is disposed under an EL element 203 which comprises a pixel electrode (anode) 46, and EL layer 47 and a cathode 48, to make a structure in which heat generated by the EL element 203 is radiated. Further, the third passivation film 45 prevents alkali metals within the EL element 203 from diffusing into the TFTs side, and prevents moisture and oxygen of the TFTs side from penetrating into the EL element 203. More preferably, heat radiating effect is given to a fourth passivation film 50 to make the EL element 203 to be enclosed by heat radiating layers.

An electrically heated smoking system includes a shell and a replaceable mouthpiece. The shell includes an electric power supply and electric circuitry. The mouthpiece includes a liquid storage portion and a capillary wick having a first end and a second end. The first end of the wick extends into the liquid storage portion for contact with liquid therein. The mouthpiece also includes a heating element for heating the second end of the capillary wick, an air outlet, and an aerosol forming chamber between the second end of the capillary wick and the air outlet. When the shell and mouthpiece are engaged or connected, the heating element is in electrical connection with the power supply via the circuitry, and a flowpath for air is defined from at least one air inlet to the air outlet via the aerosol forming chamber. In use, liquid is transferred from the liquid storage portion towards the heating element by capillary action in the wick. Liquid at the second end of the capillary wick is vaporized by the heating element. The supersaturated vapor created, is mixed and carried in the air flow from the at least one air inlet to the aerosol forming chamber. In the aerosol forming chamber, the vapor condenses to form an aerosol, which is carried towards the air outlet.

Disclosed is a heat treatment unit 4 serving as a heat treatment apparatus, which includes a chamber 42 for containing a wafer W on which a low dielectric constant interlayer insulating film is formed, a formic acid supply device 44 for supplying gaseous formic acid into the chamber 42, and a heater 43 for heating the wafer W in the chamber 42 which is supplied with formic acid by the formic acid supply device 44.

Zeolite catalysts and systems and methods for preparing and using zeolite catalysts having the CHA crystal structure are disclosed. The catalysts can be used to remove nitrogen oxides from a gaseous medium across a broad temperature range and exhibit hydrothermal stable at high reaction temperatures. The zeolite catalysts include a zeolite carrier having a silica to alumina ratio from about 15:1 to about 256:1 and a copper to alumina ratio from about 0.25:1 to about 1:1.

The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin film transistor comprises a first gate electrode and a second electrode being in contact with the first gate electrode and a gate insulating film. Further, the LDD is formed by using the first gate electrode as a mask, and source and drain regions are formed by using the second gate electrode as the mask. Then, the LDD overlapping with the second gate electrode is formed. This structure provides the thin film transistor with high reliability.

The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film. As a result, a crack due to stress hardly occurs.

A semiconductor device in which degradation due to permeation of water and oxygen can be limited, e.g., a light emitting device having an organic light emitting device (OLED) formed on a plastic substrate, and a liquid crystal display using a plastic substrate. A layer to be debonded, containing elements, is formed on a substrate, bonded to a supporting member, and debonded from the substrate. A thin film is thereafter formed on the debonded layer. The debonded layer with the thin film is adhered to a transfer member. Cracks caused in the debonded layer at the time of debonding are thereby repaired. As the thin film in contact with the debonded layer, a film having thermal conductivity, e.g., film of aluminum nitride or aluminum nitroxide is used. This film dissipates heat from the elements and has the effect of preventing deformation and change in quality of the transfer member, e.g., a plastic substrate.

A transistor formed on a monocrystalline Si wafer is temporarily transferred onto a first temporary supporting substrate. The first temporarily supporting substrate is heat-treated at high heat so as to repair crystal defects generated in a transistor channel of the monocrystalline Si wafer when transferring the transistor. The transistor is then made into a chip and transferred onto a TFT substrate. In order to transfer the transistor which has been once separated from the monocrystalline Si wafer, a different method from a stripping method utilizing ion doping is employed.

Disclosed are Bacillus thuringiensis strains comprising novel crystal proteins which exhibit insecticidal activity against lepidopteran insects. Also disclosed are novel B. thuringiensis genes and their encoded crystal proteins, as well as methods of making and using transgenic cells comprising the novel nucleic acid sequences of the invention.

Control systems and methodologies are disclosed for controlling a process having one or more motorized pumps and an associated motor drives, which comprise selecting a desired operating point within an allowable range of operation about a process setpoint according to performance characteristics associated with a plurality of components in the process, and controlling the system according to the desired operating point. The control system comprises a motor drive providing electrical power to a motor in a controlled fashion according to a control signal, and a controller providing the control signal to the motor drive according to a desired operating point within an allowable range of operation about a process setpoint. The controller selects the desired operating point according to one or more performance characteristics or criteria associated with a plurality of components in the process, such as cost, throughput, lifetime, or the like. Also disclosed are methods and systems for diagnosing operating conditions in a pump or other motorized device.

Provided is a method of producing a light-emitting apparatus having a field effect transistor for driving an organic EL device, the field effect transistor including an oxide semiconductor containing at least one element selected from In and Zn, the method including the steps of: forming a field effect transistor on a substrate; forming an insulating layer; forming a lower electrode on the insulating layer; forming an organic layer for constituting an organic EL device on the lower electrode; forming an upper electrode on the organic layer; and after the step of forming the semiconductor layer of the field effect transistor and before the step of forming the organic layer, performing heat treatment such that an amount of a component that is desorbable as H2O from the field effect transistor during the step of forming the organic layer is less than 10−5 g / m2.

It is an object to provide a semiconductor device in which power consumption can be reduced. It is another object to provide a highly reliable semiconductor device using a programming cell, such as a programmable logic device (PLD). In accordance with a change in a configuration of connections between basic blocks, power supply voltage furnishing to the basic blocks is changed. That is, when the structure of connections between the basic blocks is such that a basic block does not contribute to a circuit, the supply of the power supply voltage to this basic block is stopped. Further, the supply of the power supply voltage to the basic blocks is controlled using a programming cell formed using a field effect transistor whose channel formation region is formed using an oxide semiconductor, the field effect transistor having extremely low off-state current or extremely low leakage current.

The present arrangement provides a method of treating an oxidized layer of metal nitride, including oxidizing a layer (2) of metal oxide at the surface of a first layer (1) of nitride of said metal using a plasma of an oxidizing species with an oxidation number that is greater than that of oxygen in order to form a metallic layer (3) of a compound based on said metal; and reducing the metallic layer (3) formed in step i) using a plasma of hydrogen and nitrogen to form a second layer (4) of nitride of said metal.

A catheter system utilizing one or more sensors is described. The catheter can be used as part of an embolic coil system, guidewire system, or combined embolic coil / guidewire system where the devices interact with the catheter system. A variable detachment embolic coil system and guidewire system are also described.

A mobile station according to the present invention that is capable of connecting simultaneously to a plurality of base stations comprises a reception radio portion and TPC bit detecting portions, for receiving and detecting TPC bits (transmission power control signals) from the plurality of base stations during soft handover; a combining portion, for combining the detected TPC bits to determine a combination signal; and a transmission power control deciding portion, for controlling the transmission power of the mobile station based on the combination signal determined by the combining portion. A method according to the present invention governs use of the mobile station hereof.

A light emitting device package and a back light unit for liquid crystal display using the same wherein a fan is used to forcibly cool an LED package and a back light unit for LCD to increase the heat radiation efficiency and to prevent the degradation of the device.

The present invention provides a method of manufacturing a nitride semiconductor capable of improving the crystallinity and the surface state of the nitride semiconductor crystal formed on top of a high-temperature AlN buffer layer. An AlN buffer layer is formed on top of a growth substrate, and then nitride semiconductor crystals are grown on top of the AlN buffer layer. In a stage of manufacturing the nitride semiconductor, the crystal of the AlN buffer layer is grown at a high temperature of 900° C. or higher. In addition, an Al-source material of the AlN buffer layer is started to be supplied first to a reaction chamber and continues to be supplied without interruption, and then a N-source material is supplied intermittently.

There are provided a sealing insulating film that is formed on a substrate and melted at a first heating temperature to have a flowability, and external terminals that are formed on the substrate, and connected to other electronic device at a second heating temperature higher than the first heating temperature, and surrounded by the sealing insulating film.

An apparatus for accurately infusing fluids into a patient at specific rates over an extended period of time. The apparatus is of a low profile, laminate construction having a stored energy source in the form of a distendable membrane, which in cooperation with the base of the apparatus defines one or more fluid reservoirs each having a fluid inlet and a fluid outlet. The apparatus further includes a novel, conformable ullage made of formable materials. The conformable ullage uniquely conforms to the shape of elastomeric membrane as the membrane returns to its less distend configuration and in so doing can move between a central chamber and a toroidal chamber formed in the cover of the apparatus. This arrangement will satisfy even the most stringent medicament delivery tolerance requirements and will elegantly overcome the limitations of materials selection encountered in devices embodying solely rigid ullage construction. Additionally, the infusion cannula of the apparatus is connected to the base in a novel manner which permits expeditious subdermal delivery to the patient via a cannula which extends generally perpendicularly relative to the base.

A method is provided for an equalization strategy for compensating channel distortions in a dual-polarization optical transport system wherein the received signal includes a complex signal of a first transmitted polarization component and a complex signal of a second transmitted polarization component. In a first step, a blind self-recovery mode used a blind adaptation algorithm in calculating and modifying multiple complex equalizer transfer function coefficients to enable recovery of only the complex signal of the first transmitted polarization component. By recovering only a single polarization component in the first step the degenerate case of recovering only a single transmitted signal at both polarization component outputs of an equalizer is prevented. In a second step, equalization is performed in a training mode for calculating and modifying the multiple complex equalizer transfer function coefficients to enable recovery of the complex signals of the first and second transmitted polarization components. In a third step, equalization is performed in a data directed mode for continuing to calculate and modify the multiple complex equalizer transfer function coefficients to ensure continued recovery of the complex signals of the first and second transmitted polarization components. The method is suited for a digital signal processing implementation in a coherent receiver when a modulation scheme used on a transmitted signal is quadriphase-shift keying (QPSK). In other embodiments, the method can be used with modulation schemes such as binary PSK, M-ary PSK where M>4, or Quadrature Amplitude Modulation (QAM).

A catheter system utilizing one or more sensors is described. The catheter can be used as part of an embolic coil system, guidewire system, or combined embolic coil / guidewire system where the devices interact with the catheter system. A variable detachment embolic coil system and guidewire system are also described.

During rain, including a light source (5) for radiating light such that the light is transmitted through a vehicle window (2), a light receiving element (6) for sensing an optical signal when the light radiated from the light source (5) is reflected from the raindrop fallen on the vehicle window (2) and performing a photoelectric transduction, and a receiver (9) for receiving the photoelectrically transduced signal from the light receiving element (6) and judging the level of rainfall. The light source (5) and the light receiving element (6) are inclined with respect to the surface of the vehicle window (2) such that the light of the light source (5) directly reflected from the vehicle window (2) exits to the outside of the light receiving element (6) and the light reflected from a raindrop (8) on the vehicle window (2) is received by the light receiving element (6) to operate a vehicle wiper.

Diamond-bonded constructions include a diamond-bonded body having a thermally stable region extending a distance below a diamond-bonded body surface. The thermally stable region comprises a matrix phase of bonded-together diamond crystals, and interstitial regions comprising a reaction product. The reaction product is formed by reaction between the diamond crystals and a reactive material. The reactant is a carbide former and the reaction product is a carbide. The diamond-bonded body includes a further diamond region extending from the thermally stable region that comprises the matrix phase and a Group VIII metal disposed within interstitial regions of the matrix phase. The thermally stable region is substantially free of a catalyst material used to initially form the diamond-bonded body. The diamond-bonded body may include a material layer formed from the reaction product that is disposed on a surface of the diamond-bonded body thermally stable region.

A method of forming an oxide film comprising the steps of; (A) generating a water vapor atmosphere in a process chamber in a state where partitioning means is closed, and transferring a substrate into a substrate transfer portion, (B) opening the partitioning means after the transfer of the substrate into the substrate transfer portion is completed, and transferring the substrate into the process chamber having the water vapor atmosphere, (C) thermally oxidizing a semiconductor layer on the surface of the substrate in the process chamber having the water vapor atmosphere, to form an oxide film having a predetermined thickness on the surface of the semiconductor layer, and (D) changing the atmosphere in the process chamber into an inert gas atmosphere, then transferring the substrate out of the process chamber, closing the partitioning means and transferring the substrate out of the substrate transfer portion.

Methods are presented for fabricating transistor gate structures, wherein upper and lower metal suicides are formed above a gate dielectric. In one example, the lower silicide is formed by depositing a thin first silicon-containing material over the gate dielectric, which is implanted and then reacted with a first metal by annealing to form the lower silicide. A capping layer can be formed over the first metal prior to annealing, to prevent oxidation of the metal prior to silicidation, and a barrier layer can be formed over the lower silicide to prevent reaction with subsequently formed silicon material. In another example, the lower silicide is a multilayer silicide structure including a plurality of metal silicide sublayers.

A process for the heterotrophic or predominantly heterotrophic production of whole-celled or extracted microbial products with a high concentration of omega-3 highly unsaturated fatty acids, producible in an aerobic culture under controlled conditions using biologically pure cultures of heterotrophic single-celled fungi microorganisms of the order Thraustochytriales. The harvested whole-cell microbial product can be added to processed foods as a nutritional supplement, or to fish and animal feeds to enhance the omega-3 highly unsaturated fatty acid content of products produced from these animals. The lipids containing these fatty acids can also be extracted and used in nutritional, pharmaceutical and industrial applications.