126results about How to "Improve surface morphology" patented technology

The present invention provides a method of manufacturing a nitride semiconductor capable of improving the crystallinity and the surface state of the nitride semiconductor crystal formed on top of a high-temperature AlN buffer layer. An AlN buffer layer is formed on top of a growth substrate, and then nitride semiconductor crystals are grown on top of the AlN buffer layer. In a stage of manufacturing the nitride semiconductor, the crystal of the AlN buffer layer is grown at a high temperature of 900° C. or higher. In addition, an Al-source material of the AlN buffer layer is started to be supplied first to a reaction chamber and continues to be supplied without interruption, and then a N-source material is supplied intermittently.

An electrochemical test device for determining the presence or concentration of an analyte in an aqueous fluid sample comprises a substrate comprising a non-conductive material; a working electrode comprising a conductive film formed at least with carbon nanotubes, the working electrode having a first electrode area, a first lead and a first contact pad; a counter electrode comprising a conductive film formed at least with carbon nanotubes; a reagent capable of reacting with the analyte to produce a measurable change in potential which can be correlated to the presence or concentration of the analyte in the fluid sample, the reagent overlaying at least a portion of the first electrode area of the working electrode; and a reference electrode comprising a conductive coating formed at least with carbon nanotubes, the reference electrode having a third electrode area at least a portion of which is overlaid with a reference material.

A sensor system that detects a current representative of a compound in a liquid mixture features a multi or three electrode strip adapted for releasable attachment to signal readout circuitry. The strip comprises an elongated support which is preferably flat adapted for releasable attachment to the readout circuitry; a first conductor and a second and a third conductor each extend along the support and comprise means for connection to the circuitry. The circuit is formed with single-walled or multi walled nanotubes conductive traces and may be formed from multiple layers or dispersions containing, carbon nanotubes, carbon nanotubes / antimony tin oxide, carbon nanotubes / platinum, or carbon nanotubes / silver or carbon nanotubes / silver-chloride. An active electrode formed from a separate conductive carbon nanotubes layer or suitable dispersion, positioned to contact the liquid mixture and the first conductor, comprises a deposit of an enzyme capable of catalyzing a reaction involving the compound and preferably an electron mediator, capable of transferring electrons between the enzyme-catalyzed reaction and the first conductor. A reference electrode also formed from a conductive carbon nanotube layer or suitable dispersion is positioned to contact the mixture and the second conductor. The system includes circuitry adapted to provide an electrical signal representative of the current which is formed from printing conductive inks made with nano size particles such as conductive carbon or carbon / platinum or carbon / silver, or carbon nanotubes / antimony tin oxide to form a conductive carbon nanotube layers. The multiple-electrode strip is manufactured, by then applying the enzyme and preferably the mediator onto the electrode. Alternatively the electrode can have a carbon nanotubes / antimony tin oxide, carbon nanotubes / platinum, or carbon nanotubes / silver or carbon nanotubes / silver-chloride surface and or a conductive carbon or silver ink surface connecting leg. The carbon nanotube solution is first coated and patterned into electro shapes and the conductive carbon nanotubes, carbon or silver ink can be attached by printing the ink to interface with the carbon nanotube electro surface. A platinum electrode test strip is also disclosed that is formed from either nano platinum distributed in the carbon nanotube layer or by application or incorporation of platinum to the carbon nanotube conductive ink.

Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs. Ordinary one-surface polishing having the steps of gluing a wafer with a surface on a flat disc, bringing another surface in contact with a lower turntable, pressing the disc, rotating the disc, revolving the turntable and whetting the lower surface, cannot remedy the inherent distortion. The Distortion worsens morphology of epitaxial wafers, lowers yield of via-mask exposure and invites cracks on surfaces. Nitride crystals are rigid but fragile. Chemical / mechanical polishing has been requested in vain. Current GaN wafers have roughened bottom surfaces, which induce contamination of particles and fluctuation of thickness. Circular nitride wafers having a diameter larger than 45 mm are made and polished. Gross-polishing polishes the nitride wafers in a pressureless state with pressure less than 60 g / cm2 by lifting up the upper turntable for remedying distortion. Distortion height H at a center is reduced to H≦12 μm. Minute-polishing is a newly-contrived CMP which polishes the nitride wafers with a liquid including potassium hydroxide, potassium peroxodisulfate and powder, irradiates the potassium peroxodisulfate with ultraviolet rays. The CMP-polished top surface has roughness RMS of 0.1 nm≦RMS≦5 nm or more favorably 0.1 nm≦RMS≦0.5 nm. The CMP-polished bottom surface has roughness RMS of 0.1 nm≦RMS≦5000 nm or more favorably 0.1 nm≦RMS≦2 nm. TTV is less than 10 μm.