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444results about How to "Few defect" patented technology
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Semiconductor light emitting element, and its manufacturing method
InactiveUS6303405B1Quality improvementImprove electricitySolid-state devicesSemiconductor/solid-state device manufacturingLaser lightHeat stress
A semiconductor light emitting element of nitride compound semiconductors excellent in cleavability, heat radiation and resistance to leakage is made by epitaxially grow a nitride compound semiconductor layers on a substrate of sapphire, for example, and thereafter separating the substrate. For separating the substrate, there are a technique using a abruption mechanism susceptible to a stress such as a "lift-off layer" and a recesses on a substrate. A technique using laser light to cause a local dense heat stress at the abruption mechanism is effective. A nitride compound semiconductor obtained by separating the substrate may be used as a new substrate to epitaxially grow high-quality nitride compound semiconductors thereon.
Owner:ALPAD CORP
Methods of atomic layer deposition of hafnium oxide / erbium oxide bi-layer as advanced gate dielectrics
InactiveUS20130313656A1Improve electrical performanceFew defectSemiconductor/solid-state device manufacturingChemical vapor deposition coatingGate dielectricHafnium
Provided is a two-step ALD deposition process for forming a gate dielectric involving an erbium oxide layer deposition followed by a hafnium oxide layer deposition. Hafnium oxide can provide a high dielectric constant, high density, large bandgap and good thermal stability. Erbium oxide can act as a barrier against oxygen diffusion, which can lead to increasing an effective oxide thickness of the gate dielectric and preventing hafnium-silicon reactions that may lead to higher leakage current.
Owner:INTERMOLECULAR
Rechargeable lithium/water, lithium/air batteries
InactiveUS20070221265A1Improve protectionEasy to controlFinal product manufacturePV power plantsHigh energyOptoelectronics
Electrochemical cells, and more specifically, rechargeable batteries comprising lithium anodes for use in water and / or air environments, as well as non-aqueous and non-air environments, are presented. In one embodiment, an electrochemical cell includes an anode comprising lithium and a multi-layered structure positioned between the anode and an electrolyte of the cell. A multi-layered structure can include at least a first single-ion conductive material layer (e.g., a lithiated metal layer), and at least a first polymeric layer positioned between the anode and the single-ion conductive material. The invention also can provide an electrode stabilization layer positioned within the electrode, i.e., between one portion and another portion of an electrode, to control depletion and re-plating of electrode material upon charge and discharge of a battery. Advantageously, electrochemical cells comprising combinations of structures described herein are not only compatible with environments that are typically unsuitable for lithium, but the cells may be also capable of displaying long cycle life, high lithium cycling efficiency, and high energy density.
Owner:SION POWER CORP
Process for production of semiconductor substrate
InactiveUS7148119B1Improve productivityLow costSemiconductor/solid-state device detailsSolid-state devicesPorous layerSemiconductor
A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.
Owner:CANON KK
Electrode protection in both aqueous and non-aqueous electrochemical cells, including rechargeable lithium batteries
ActiveUS20070224502A1Preventing electronic communicationAvoid communicationFinal product manufactureElectrode carriers/collectorsHigh energyConductive materials
Electrode protection in electrochemical cells, and more specifically, electrode protection in both aqueous and non-aqueous electrochemical cells, including rechargeable lithium batteries, are presented. In one embodiment, an electrochemical cell includes an anode comprising lithium and a multi-layered structure positioned between the anode and an electrolyte of the cell. A multi-layered structure can include at least a first single-ion conductive material layer (e.g., a lithiated metal layer), and at least a first polymeric layer positioned between the anode and the single-ion conductive material. The invention also can provide an electrode stabilization layer positioned within the electrode, i.e., between one portion and another portion of an electrode, to control depletion and re-plating of electrode material upon charge and discharge of a battery. Advantageously, electrochemical cells comprising combinations of structures described herein are not only compatible with environments that are typically unsuitable for lithium, but the cells may be also capable of displaying long cycle life, high lithium cycling efficiency, and high energy density.
Owner:SION POWER CORP
Process for imagewise opening and filling color display components and color displays manufactured thereof
InactiveUS6972893B2Maintain structural integrityWider materialStatic indicating devicesElectrographic processes using photoelectrophoresisDisplay deviceEngineering
Owner:E INK CALIFORNIA
Methods of forming graphene by graphite exfoliation
ActiveUS20130102084A1Promote recoveryEasy to manufactureMaterial nanotechnologyElectrolysis componentsGraphiteSolar cell
Methods of forming graphene by graphite exfoliation, wherein the methods include: providing a graphite sample having atomic layers of carbon; introducing a salt and a solvent into the space between the atomic layers; expanding the space between the atomic layers using organic molecules and ions from the solvent and the salt; and separating the atomic layers using a driving force to form one or more sheets of graphene; the graphene produced by the methods can be used to form solar cells, to perform DNA analysis, and for other electrical, optical and biological applications.
Owner:NAT UNIV OF SINGAPORE
Process for imagewise opening and filling color display components and color displays manufactured thereof
InactiveUS7385751B2Wider materialWider processElectrographic processes using photoelectrophoresisElectrographic process apparatusDisplay deviceEngineering
Owner:E INK CALIFORNIA
Graphene sheet, graphene base including the same, and method of preparing the graphene sheet
ActiveUS20110104442A1Large sizeFew defectMaterial nanotechnologyDecorative surface effectsGrapheneMaterials science
Owner:SAMSUNG ELECTRONICS CO LTD
Group III nitride compound semiconductor devices and method for fabricating the same
InactiveUS20060060866A1Avoid problemsQuality improvementLaser detailsSemiconductor laser structural detailsThreading dislocationsDislocation
A sapphire substrate 1 is etched so that each trench has a width of 10 μm and a depth of 10 μm were formed at 10 μm of intervals in a stripe pattern. Next, an AlN buffer layer 2 having a thickness of approximately 40 nm is formed mainly on the upper surface and the bottom surface of the trenches of the substrate 1. Then a GaN layer 3 is formed through vertical and lateral epitaxial growth. At this time, lateral epitaxial growth of the buffer layer 21, which was mainly formed on the upper surface of the trenches, filled the trenches and thus establishing a flat top surface. The portions of the GaN layer 3 formed above the top surfaces of the mesas having a depth of 10 μm exhibited significant suppression of threading dislocation in contrast to the portions formed above the bottoms of the trenches.
Owner:TOYODA GOSEI CO LTD
Substrate based unmolded package including lead frame structure and semiconductor die
InactiveUS7061077B2Easy to makeIncrease contrastSemiconductor/solid-state device detailsSolid-state devicesSemiconductor chipEngineering
Owner:SEMICON COMPONENTS IND LLC
Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
ActiveUS20060228648A1Wide spectrum of molecular designReduce molecular weightOrganic chemistryPhotosensitive materialsResistSulfonate
Sulfonate salts have the formula: CF3—CH(OCOR)—CF2SO3−M+ wherein R is C1-C20 alkyl or C6-C14 aryl, and M+ is a lithium, sodium, potassium, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and method for producing resist pattern
ActiveUS20120052443A1Great DOFFew defectPhotosensitive materialsRadiation applicationsAliphatic hydrocarbonMethyl group
A resist composition contains; a resin having a structural unit derived from a compound represented by the formula (a); and an acid generator.wherein R1 represents a hydrogen atom or a methyl group; R2 represents an optionally substituted C1 to C18 aliphatic hydrocarbon group; A1 represents an optionally substituted C1 to C6 alkanediyl group or a group represented by the formula (a-g1);wherein s represents 0 or 1; A10 and A12 independently represent an optionally substituted C1 to C5 aliphatic hydrocarbon group; A11 represents a single bond or an optionally substituted C1 to C5 aliphatic hydrocarbon group; X10 and X11 independently represents an oxygen atom, a carbonyl group, a carbonyloxy group or an oxycarbonyl group; provided that a total number of the carbon atom of A10, A11, A12, X10 and X11 is 6 or less.
Owner:SUMITOMO CHEM CO LTD
Analytical Software Design System
ActiveUS20080263506A1Improve effectivenessExpand coverageSoftware designRequirement analysisSystems designMathematical model
An analytical software design system arranged to receive informal system design specifications and to convert them into verified design specifications for use in creating source code and carrying out implementation testing of the source code is described. The system comprises a verified black box specification generator arranged to process the received informal system design specifications to create formal specifications; to generate from the formal specifications mathematical models representing the system behaviour; to analyse the mathematical models to determine if they have the required behaviour; to adjust the formal specifications until the required behaviour is achieved; and to derive the required verified design specifications from the mathematical models.
Owner:COCOTEC LTD
Coating method and planographic printing plate
InactiveUS20050005794A1Low costImprove uniformityPretreated surfacesPhotomechanical coating apparatusPlanographic printingMaterials science
The present invention provides a method of coating a coating solution comprising: providing a web; providing a coating solution; coating the coating solution on at least one surface of the web; and drying the coating solution to form a coated layer, wherein a temperature of the web is maintained at 35° C. or more during coating. According to the coating method, a multi-layered planographic printing plate can be manufactured at low energy cost and running cost.
Owner:FUJIFILM HLDG CORP +1
Method for linear friction welding and product made by such method
A process for joining a base for an airfoil to a disk for an integrally bladed rotor stage in a gas turbine engine includes providing a disk having a radially outer rim with a slot defined therein by a recessed surface, and further includes providing a base having a longitudinally extending root portion facing opposite a longitudinally extending support portion for supporting the airfoil. The root portion has a root surface and the support portion has an outer surface. The process further includes bringing the root surface of the root portion into contact with the recessed surface bounding the slot, applying pressure and relative movement between the base and the rim to achieve during welding, substantial contiguity between the root surface and the recessed surface over the area of the recessed surface, resulting in a substantially continuous linear friction weld between the base and the rim.
Owner:UNITED TECH CORP
Apparatus for fabricating reinforced composite materials
A mold tool for forming a reinforced matrix composite part for a gas turbine engine, comprising a body. The body comprises a body surface capable of receiving a first portion of a composite preform. A first endplate and second endplate are attached to the body and include a substantially planar surface disposed perpendicular to the body surface. A first and second set of plates are attached to the first and second endplate adjacent to the body surface and have a geometries that includes a first and second cavity bounded by the first and second plate and first and second endplate. The first and second cavities have a volume sufficient to receive a second portion of a composite preform. The second cavity is in fluid communication with the first cavity, which is in fluid communication with a vacuum source.
Owner:GENERAL ELECTRIC CO
Semiconductor substrate and its production method, semiconductor device comprising the same and its production method
InactiveUS6768175B1High crystallinityFew defectSemiconductor/solid-state device testing/measurementSolid-state devicesSilicon oxideSoi substrate
When a SOI substrate is produced a first silicon layer epitaxially grown on the insulating underlay is ion implanted to make deep part of interface of the silicon layer amorphous, and then annealed to recrystallize. Next, the silicon layer is heat treated to oxidize part of the surface side, and after the silicon oxide is removed by etching, a silicon layer is epitaxially grown on the remaining first silicon layer to form a second silicon layer. Subsequently, the second silicon layer is again ion implanted to make deep part of interface amorphous, then annealing is performed to recrystallize. With this method, a SOI substrate, which is very small in crystal defect density of the silicon layer and good in surface flatness, can be produced. Therefore, on the semiconductor substrate an electronic device or optical device having high device performance and reliability can be realized.
Owner:ASAHI KASEI KK
Self-grown monopoly compact grit
InactiveUS6616725B2Strong and more resilientProduced cost-effectivelyPigmenting treatmentOther chemical processesBoron nitrideSolvent
A self-grown monopoly compact grit and high pressure, high temperature process for preparing the same. The high pressure, high temperature sintered / synthesized monopoly compact grit is used in various industrial tools such as saw blades, grinding wheels, cutting tools and drill bits. Further, the monopoly compact grit of the present invention is produced from a seed of a mono-crystal of diamond or cubic boron nitride surrounded by either a self-grown crystal layer or an integrally bonded poly-crystalline sintered compact layer. The self-grown crystal layer is a new grown crystal structure where the seed crystal grows into a new phase through a normal diamond or cubic boron nitride synthesis process in the presence of a catalyst metal solvent. The compact layer is composed of about 50 to about 90 volume percent of diamond or cubic boron nitride, a typical binder material, which is a catalyst for crystal-to-crystal bonding, and a cementing agent which is a binding agent capable of forming stable carbide and nitride bonds.
Owner:CHO HYUN SAM +2
Automated Conformance and Interoperability Test Lab
ActiveUS20130297973A1Easy to useImprove individual medical outcomeError detection/correctionMedical equipmentTest proceduresTest fixture
A set of self-service testing tools and processes used to conduct gateway to gateway testing. The system includes a test harness comprising a collection of software and test data configured to test a program unit by running it under varying conditions and monitoring its behavior and outputs. The test harness allows for the automation of tests, and can call functions with supplied parameters and analyze results to a desired value.
Owner:AEGIS NET
Acid stable membranes for nanofiltration
InactiveUS20030121857A1Good rejectionImprove permeabilityGeneral water supply conservationUltrafiltrationNanofiltrationOrganic compound
Semi-permeable membranes are described that allow for the efficient processing of many liquid based feed solutions, particularly those that contain acids. The membranes of this invention are able to process such feeds with high permeate rates while maintaining excellent retention of dissolved metals, cations, and organic compounds, even in the presence of hot concentrated acids. The semi-permeable membranes of this invention are able to conduct such separations for a useful period of time due to their chemical stability towards acids and their ability to permeate acids.
Owner:GE OSMONICS INC
Image processing apparatus and image processing method
ActiveUS20080232692A1Few defectPrecise processingImage enhancementImage analysisImaging processingSubject matter
The image processing apparatus comprises: an image correction unit which applies a correction processing to the digital image data; a subject detection unit which detects a human subject from an input image data; a skin color setting unit which sets skin color information based on the detected human subject; a skin color extraction unit which extracts pixels having a skin color similar to a skin color represented by the set skin color information from the digital image data; an area setting unit which sets mask information used to apply correction only to an area to be corrected; and an image output unit which produces output image data based on the inputted digital image data, the corrected image data and the mask information. In a case where the human subject is not detected, skin color information is set using the pre-defined skin color information.
Owner:FUJIFILM CORP
Light emitting element and light emitting device and method of manufacturing light emitting element
InactiveUS20060243967A1Solve low luminous efficiencyIncrease layer thicknessSolid-state devicesSemiconductor/solid-state device manufacturingHigh concentrationSimple Organic Compounds
It is an object of the present invention to provide a light emitting element with high luminous efficiency, less defects, and low voltage, and a light emitting device having such a light emitting element. It is another object of the invention to provide a method of manufacturing such a light emitting element in simpler manner compared with a conventional manner. A light emitting element of the present invention includes a pair of electrodes, a layer containing a composite material, and a light emitting region; wherein the layer containing a composite material contains an organic compound and an inorganic compound; the light emitting region contains a material having a high light emitting property and a material having a high carrier transporting property, and a region containing high concentration of the material having a high light emitting property and a region containing high concentration of the material having a high carrier transporting property are alternately stacked in the light emitting region.
Owner:SEMICON ENERGY LAB CO LTD
Multi functional pump for pumping molten metal
ActiveUS7507365B2Easy to pumpMaximize molten metal dischargeSpecific fluid pumpsPump componentsImpellerProgrammable logic controller
Owner:THUT BRUNO H
Electrode protection in both aqueous and non-aqueous electrochemical cells, including rechargeable lithium batteries
ActiveUS20090291353A1Improve protectionEasy to controlFinal product manufacturePrimary cellsHigh energyConductive materials
Electrode protection in electrochemical cells, and more specifically, electrode protection in both aqueous and non-aqueous electrochemical cells, including rechargeable lithium batteries, are presented. In one embodiment, an electrochemical cell includes an anode comprising lithium and a multi-layered structure positioned between the anode and an electrolyte of the cell. A multi-layered structure can include at least a first single-ion conductive material layer (e.g., a lithiated metal layer), and at least a first polymeric layer positioned between the anode and the single-ion conductive material. The invention also can provide an electrode stabilization layer positioned within the electrode, i.e., between one portion and another portion of an electrode, to control depletion and re-plating of electrode material upon charge and discharge of a battery. Advantageously, electrochemical cells comprising combinations of structures described herein are not only compatible with environments that are typically unsuitable for lithium, but the cells may be also capable of displaying long cycle life, high lithium cycling efficiency, and high energy density.
Owner:SION POWER CORP
Method of manufacturing cmc articles having small complex features
InactiveUS20090165924A1Easy to manufactureImprove productivityBlade accessoriesEfficient propulsion technologiesTurbineGas turbines
A method for forming a ceramic matrix composite (CMC) component for gas turbine engines. The method contemplates replacing a plurality of plies with insert material. The insert material can be partially cured or pre-cured and applied in place of a plurality of small plies or it may be inserted into cavities of a component in the form of a paste or a ply. The insert material is isotropic, being formed of a combination of matrix material and chopped fibers, tow, cut plies or combinations thereof. The use of the insert material allows for features such as thin edges with thicknesses of less than about 0.030 inches and small radii such as found in corners. The CMC components of the present invention replace small ply inserts cut to size to fit into areas of contour change or thickness change, and replace the small ply inserts with a fabricated single piece discontinuously reinforced composite insert, resulting in fewer defects, such as wrinkles, and better dimensional control.
Owner:GENERAL ELECTRIC CO
Luminescence display apparatus and method for fabricating the same
InactiveUS20050168135A1Few defectExcellent gradation controllabilityTransistorDischarge tube luminescnet screensActive matrixBlock structure
A luminescence display apparatus including a light blocking structure having a function of reflecting light propagating through the dielectric layer and / or of attenuating light propagating through the dielectric layer, that surrounds a EL element for separating a pixel driving TFT from the EL element. Self-emitted light or external light be attenuated before reaching the TFT by using the light blocking structure to reduce the photo leakage of the TFT to provide the active matrix organic EL display apparatus having the less defects and the excellent gradation controllability.
Owner:NEC CORP
Synthetic staple fibers for an air-laid nonwoven fabric
InactiveUS7560159B2Few defectQuality improvementSynthetic fibresFilament/thread formingMetallurgyNonwoven fabric
Owner:TEJIN FIBERS LTD
Three-dimensional quantum well transistor and fabrication method
ActiveUS20140203243A1Reduce resistanceImprove thermal stabilitySemiconductor/solid-state device manufacturingSemiconductor devicesQuantum wellEpitaxial material
Three dimensional quantum well transistors and fabrication methods are provided. A quantum well layer, a barrier layer, and a gate structure can be sequentially formed on an insulating surface of a fin part. The gate structure can be formed over the barrier layer and across the fin part. The QW layer and the barrier layer can form a hetero-junction of the transistor. A recess can be formed in the fin part on both sides of the gate structure to suspend a sidewall spacer. A source and a drain can be formed by growing an epitaxial material in the recess and the sidewall spacer formed on both sidewalls of the gate electrode can be positioned on surface of the source and the drain.
Owner:SEMICON MFG INT (SHANGHAI) CORP
Method for heat treatment of silicon wafer and silicon wafer
InactiveUS6245311B1Microroughness and haze can be decreasedFew defectSiliconSemiconductor/solid-state device manufacturingElectricityWafering
There is disclosed a method for heat treatment of a silicon wafer performed in a reducing atmosphere containing hydrogen by utilizing a rapid thermal annealer, wherein the heat treatment comprises a plurality of steps each of which is performed with a differently defined heat treatment condition. In this method, the heat treatment comprising a plurality of steps may be continuously performed without taking out the wafer from an RTA apparatus. The method of the present invention can, in particular, reduce COP density of the silicon wafer surface, reduce its microroughness and haze, and thus improve electric characteristics such as oxide dielectric breakdown voltage and mobility of carriers.
Owner:SHIN-ETSU HANDOTAI CO LTD
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