4251results about "Photomechanical coating apparatus" patented technology

A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.

In a coating and developing apparatus that forms a resist film on substrates such as semiconductor wafers, and develops substrates exposed by an aligner, times after the aligner unloads substrates until heating units (PEB) start heating the substrates are kept uniform. Exposed wafers are prevented from being left stagnant in an interface portion disposed between a region in which resist is coated and developed and the aligner. In the region in which resist is coated and developed, a first transferring means that successively executes transportation cycles to transfer substrates from upstream side modules to downstream side modules in a flow of processes of substrates. N heating units (PEB) are disposed (n is for example 5). Exposed wafers loaded into the heating units (PEB) are unloaded by the first transferring means after (n−1) cycles including the transferring cycle of the first transferring means have elapsed.

Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.

A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and carbon. The dielectric layer may comprise a first dielectric layer comprising silicon, carbon, and nitrogen, and a second layer of nitrogen-free silicon and carbon containing material in situ on the first dielectric layer, and a third dielectric layer comprising silicon, oxygen, and carbon on the second dielectric layer.

Solution processible hardmasks are described that can be formed from aqueous precursor solutions comprising polyoxometal clusters and anions, such as polyatomic anions. The solution processible metal oxide layers are generally placed under relatively thin etch resist layers to provide desired etch contrast with underlying substrates and / or antireflective properties. In some embodiments, the metal oxide hardmasks can be used along with an additional hardmask and / or antireflective layers. The metal oxide hardmasks can be etched with wet or dry etching. Desirable processing improvements can be obtained with the solution processible hardmasks.

A substrate processing apparatus comprising a wet processing station with a resist coating device for coating a resist on a substrate and / or a development processing device for developing the resist on the substrate is disclosed. The apparatus may have an additional processing station and a substrate handler for moving the substrate to the wet, and / or additional processing station and moving the substrate in a direction in and / or out of the substrate processing apparatus. The additional processing station comprises an infiltration device.

There is described a method of forming a fine pattern aimed at depositing a silicon-nitride-based anti-reflection film which is stable even at high temperature and involves small internal stress. The method is also intended to preventing occurrence of a footing pattern (a rounded corner) in a boundary surface between a photoresist and a substrate at the time of formation of a chemically-amplified positive resist pattern on the anti-reflection film. The method includes the steps of forming a silicon-nitride-based film directly on a substrate or on a substrate by way of another layer; and forming a photoresist directly on the silicon-nitride-based film or on the silicon-nitride-based film by way of another layer. The silicon-nitride-based film is deposited while the temperature at which the substrate is to be situated is set so as to fall within the range of 400 to 700° C., through use of a plasma CVD system. The method further includes a step of depositing a silicon-oxide-based film immediately below the photoresist. The silicon-oxide-based film is deposited while the temperature at which the substrate is to be situated is set so as to fall within the range of 400 to 700° C., through use of a plasma CVD system.

Methods and apparatus for performing an atomic layer deposition lithography process are provided in the present disclosure. In one embodiment, a method for forming features on a material layer in a device includes pulsing a first reactant gas mixture to a surface of a substrate disposed in a processing chamber to form a first monolayer of a material layer on the substrate surface, directing an energetic radiation to treat a first region of the first monolayer, and pulsing a second reactant gas mixture to the substrate surface to selectively form a second monolayer on a second region of the first monolayer.

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.

Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition. Surface properties of the photoresist underlayer can be manipulated using a treatment process.

A substrate processing method and apparatus to create a sacrificial masking layer is disclosed. The layer is created by providing a first precursor selected to react with one of a radiation modified and unmodified layer portion and to not react with the other one of the radiation modified and unmodified layer portion on a substrate in a reaction chamber to selectively grow the sacrificial masking layer.

The systems, methods and products of the invention include systems and methods for manufacturing servo tracks on a magnetic tape. In one aspect, the invention includes systems for manufacturing magnetic tapes having servo tracks thereon wherein the servo tracks are optically detectable and are capable of being processed by a servo control system for maintaining alignment of a magnetic recording head with the data tracks on the recording side of the magnetic tape. In one practice, the manufacturing systems described herein engrave the servo tracks onto the non-recording side of a magnetic tape by directing a laser beam at the non- recording side of the magnetic tape. In another practice, the manufacturing systems described herein engrave the servo tracks onto the magnetic side of a magnetic tape by directing a laser beam at the magnetic side of the magnetic tape. Such engraved patterns can act as optical servo tracks for maintaining alignment of the recording head with the data tracks on the magnetic tape.

A method for preparing a multilayer structure includes the following steps. A substrate having a patterned layer is disposed in a reactor. A first metal precursor is introduced into the reactor. A first excess metal precursor is purged from the reactor by pumping out the first excess metal precursor. A first reactant is introduced into the reactor, wherein the first reactant reacts with the first metal precursor to form a first metal-containing layer on the patterned layer. A first excess reactant is purged from the reactor by pumping out the first to excess reactant. A second metal precursor is introduced into the reactor, wherein the second metal precursor is adsorbed on the first metal-containing layer. A second excess metal precursor is purged from the reactor by pumping out the second excess metal precursor. A second reactant is introduced into the reactor, wherein the second reactant reacts with the second metal precursor to form a second metal-containing layer on the first metal-containing layer.

A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.

The disclosure provides methods and devices for rapidly assembling high density biomolecular arrays.

A method of forming a dual cure three-dimensional object by additive manufacturing may be carried out by mixing a first precursor liquid and a second precursor liquid to produce a polymerizable liquid comprising a mixture of (i) a light polymerizable liquid first component, and (ii) a second solidifiable component (e.g., a second reactive component) that is different from the first component (e.g., that does not contain a cationic photoinitiator, or is further solidified by a different physical mechanism, or further reacted, polymerized or chain extended by a different chemical reaction). In the foregoing: (i′) at least one reactant of the second solidifiable component is contained in the first precursor liquid, and (ii′) at least one reactant or catalyst of the second solidifiable component is contained in the second precursor liquid. Once mixed, the three-dimensional object may be formed from the resin by a dual cure additive manufacturing process.

A positive resist composition comprising: (A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid; (B) a compound which generates an acid upon irradiation with actinic rays or a radiation; (C) a fluorine-containing compound containing at least one group selected from the groups (x) to (z); and (F) a solvent, and a method of pattern formation with the composition: (x) an alkali-soluble group; (y) a group which decomposes by an action of an alkaline developing solution to enhance a solubility in an alkaline developing solution; and (z) a group which decomposes by an action of an acid.

An orthogonal process for photolithographic patterning organic structures is disclosed. The disclosed process utilizes fluorinated solvents or supercritical CO2 as the solvent so that the performance of the organic conductors and semiconductors would not be adversely affected by other aggressive solvent. One disclosed method may also utilize a fluorinated photoresist together with the HFE solvent, but other fluorinated solvents can be used. In one embodiment, the fluorinated photoresist is a resorcinarene, but various fluorinated polymer photoresists and fluorinated molecular glass photoresists can be used as well. For example, a copolymer perfluorodecyl methacrylate (FDMA) and 2-nitrobenzyl methacrylate (NBMA) is a suitable orthogonal fluorinated photoresist for use with fluorinated solvents and supercritical carbon dioxide in a photolithography process. The combination of the fluorinated photoresist and the fluorinated solvent provides a robust, orthogonal process that is yet to be achieved by methods or devices known in the art.

An irrigated balloon catheter for use in an ostium of a pulmonary vein, includes a flex circuit electrode assembly adapted for circumferential contact with the ostium when the balloon is inflated. Adapted for both diagnostic and therapeutic applications and procedures, the balloon catheter may be used with a lasso catheter or focal catheter. The flex circuit electrode assembly includes a substrate, a contact electrode on an outer surface of the substrate, the contact electrode having a “fishbone” configuration with a longitudinally elongated portion and a plurality of transversal fingers, and a wiring electrode on an inner surface of the substrate, and conductive vias extending through the substrate electrically coupling the contact electrode and the writing electrodes. Microelectrodes with exclusion zones are strategically positioned relative to the electrodes. The electrodes may also be split into electrode portions.

A method for exposing photo-sensitive printing plates comprises applying a patterned coating to the printing plate to form a mask. The coating may be sprayed onto the printing plate and patterned by laser ablation. The method avoids the need to stock printing plates with integral masking layers. In preferred implementations the printing plate is exposed to actinic radiation without dismounting it from the apparatus in which the coating is applied. This minimizes the likelihood that the coating could be damaged in handling. The coating may be a thin sprayed on layer of carbon in a suitable binder.

The present invention provides a method of coating a coating solution comprising: providing a web; providing a coating solution; coating the coating solution on at least one surface of the web; and drying the coating solution to form a coated layer, wherein a temperature of the web is maintained at 35° C. or more during coating. According to the coating method, a multi-layered planographic printing plate can be manufactured at low energy cost and running cost.

A method for replicating a nanopattern is disclosed. This method includes identifying a substrate; coating a surface of the substrate with a liquid layer; positioning a mold having a plurality of recesses defining a negative of the nanopattern in sufficient proximity with the coated liquid layer to cause the liquid layer to self-fill at least a portion of the plurality of recesses of the mold; and, chemically transforming the liquid layer to enable the transformed film to substantially retain the nanopattern.

According to an aspect of the invention, there is provided a method for forming a resist pattern by using a liquid immersion type exposing apparatus which executes exposure in a state in which a space between a resist film and an objective lens is filled with a liquid comprises forming a film to be processed on a substrate to be processed, forming the resist film on the substrate to be processed on which the film to be processed is formed, forming a resist protective film on the resist film and exposing the resist film after the formation of the resist protective film.

In a transferring region of a wafer transferring portion that transfers a wafer placed in a carrier loading and unloading portion, a pattern inspecting portion for inspecting a resist pattern and a carrier for accommodating a wafer determined as an unacceptable wafer are disposed. The carrier is conveyed to an external cleaning portion. Resist on the unacceptable wafer is cleaned and removed. The resultant wafer is loaded to the coating and developing unit. The film thickness of a monitor wafer is measured by a film thickness measuring portion disposed in the coating and developing unit. Thereafter, resist on the entire surface of the monitor wafer is removed with thinner supplied from a solvent nozzle. Thus, the monitor wafer is regenerated. Consequently, when the coating and developing unit is operated and a substrate and a monitor substrate that have been processes are inspected, the throughput of the coating and developing unit becomes high and the processes can be automatically performed.

We disclose targets for generating x-rays using electron beams, along with their method of fabrication. The targets comprise a number of microstructures fabricated from an x-ray target material arranged in close thermal contact with a substrate such that the heat is more efficiently drawn out of the x-ray target material. This in turn allows irradiation of the x-ray generating substance with higher electron density or higher energy electrons, which leads to greater x-ray brightness, without inducing damage or melting.The microstructures may comprise conventional x-ray target materials (such as tungsten) that are patterned at micron-scale dimensions on a thermally conducting substrate, such as diamond. The microstructures may have any number of geometric shapes to best generate x-rays of high brightness and efficiently disperse heat.In some embodiments, the target comprising microstructures may be incorporated into a rotating anode geometry, to enhance x-ray generation in such systems.

A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed. In this case, the absorber layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 25 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7.

The present invention is directed to methods for coating monolayer films of surface-active polymers onto substrates of arbitrary shape. The present invention also provides molecular-based methods and processes that can be used to control the chemical and physical nature of surfaces and interfaces. The present invention is directed to methods for modifying functional groups in a homogenous way and controlling the spatial distributions of surface functional groups. The invention is directed to methods for modifying a substrate having a surface comprising coating a macromolecular surfactant comprising a modifiable functional group onto the surface of the substrate, wherein the modifiable functional group assembles to the air-coating interface, thereby modifying the surface of the substrate; wherein if the substrate comprises a first polymer and the macromolecular surfactant comprises a second polymer having a modifiable functional group, then the group is not modifiable by an acid to functionally modify the surface of the substrate. The invention is directed to devices made by these methods.

Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention.