71results about How to "Desired thickness" patented technology

A thermal barrier liner is preferably spray coated onto the internal surface of a container. The liner is provided in embodiments including a closed cell substrate, a base layer having gas or liquid filled microcapsules, a base layer having microencapsulated solid-liquid phase change material, or combinations thereof. For the closed cell substrate embodiment, when the liner is under pressure within the container prior to the container being opened, the liner maintains a minimum thickness. When the container is opened and as pressure is released within the container, the liner expands to achieve equilibrium. The liner can be supplemented with a foaming agent to create cellular structures. Voids created by the microcapsules enhance the thermal barrier characteristics of the liner. The phase change material changes phase from a solid to a liquid state upon absorbing heat.

There is provided a method for producing a cushion material composed of a resin molded article with a spring structure which is so moldable as to allow the mold take any shape and size, is cheap, and resistant to collapsing, does not cause fatigue even after prolonged use, and has high shock absorbing capability and load capacity, and thus suitably used as a material of any supports on which one can sit, rest or mount such as seats of automotive vehicles, motor cycles, bicycles, electric trains, and aircraft, saddles for horse riding, chairs, sofas and beds, and a method for producing a cushion material requiring only a low cost for its disposal.

Disclosed is a method for modifying an insulating film with plasma using a plasma processing apparatus which introduces a microwave into a processing chamber through a plane antenna having a plurality of holes. Processing gas containing a noble gas and oxygen is introduced into the processing chamber and microwave is introduced into the processing chamber through the plane antenna. Plasma composed mainly of O2+ ions and O(1D2) radicals is generated in a pressure condition within a range of 6.7 Pa to 267 Pa to modify the insulating film with the plasma.

A chip microphone implemented as a single silicon-based chip includes a diaphragm which includes a vibration portion that vibrates in response to sound pressures, a support block which is formed on the diaphragm, excluding at least the vibration portion to provide a vibration space, and a back plate which is formed on the support block and over the vibration space, thereby facing the vibration portion of the diaphragm across the vibration space.

A liquid crystalline coating solution which comprises: an azo compound represented by the following general formula (I); and a solvent to dissolve the azo compound:wherein Q1 is a phenyl group or a naphthyl group (these groups may have any substituent groups); Q2 is a pheylene group or a naphtylene group (these groups may have any substituent groups); m is an integer from 1 to 5; and M is a counter ion.

In a method of manufacturing a hollow stabilizer, a pipe compressing step of compressing an electroseamed pipe in a temperature range of a hot state or a warm state so as to make a rate of a thickness with respect to an outer diameter between 18 and 35% is performed, and a forming step of forming the compressed electroseamed pipe in a stabilizer shape in a cold state is executed. Next, a step of applying a heat treatment to a half-finished stabilizer is performed, a shot peening step of impacting a shot on the half-finished stabilizer is performed, and a step of coating the half-finished stabilizer is performed.

A method for growing epitaxial diamond is provided here. A metallic layer is deposited on a diamond substrate and is followed by an epitaxial diamond film deposited on top of the metallic layer. As a buffer layer, the metallic layer relieves stress accumulated in the thin film of the epitaxial diamond to prevent cracks. In consequence, diamond epitaxial layers with desired thickness and good quality can be obtained.

In manufacturing thinned semiconductor chips by grinding a semiconductor wafer supported on a rigid support substrate, in order to remove the semiconductor wafer or semiconductor chips from the support substrate without damage to the semiconductor wafer or semiconductor chips, a semiconductor wafer at its surface is bonded on a light-transmissive support substrate through an adhesive layer having an adhesion force that is reduced upon exposure to light radiation, thereby exposing the back surface of the semiconductor wafer. A tape is bonded to the backside of the semiconductor wafer integrated with the support substrate after grinding, wherein the tape is supported at the periphery. Before or after bonding of the tape, light radiation is applied to the adhesive layer at a side close to the support substrate to reduce the adhesion force in the adhesion layer. Thereafter, the support substrate and adhesive layer is removed from the surface of the semiconductor wafer, leaving the semiconductor wafer held by the tape and frame. The semiconductor wafer supported by the tape and frame is cut at streets into individual semiconductor chips.

A curved touch panel and a method for fabricating the same are disclosed. The curved touch panel with a predetermined curvature, includes a curved substrate having a curved upper surface and a curved lower surface, the upper surface being chemically strengthened and the lower surface being acid-etched, an adhesive layer disposed on one of the curved upper surface and the curved upper surface of the curved substrate, and a curved touch sensor plate with flexibility having a curved upper surface and curved lower surface disposed on the adhesive layer opposite to the curved substrate, wherein the curved upper surface and the curved lower surface are acid-etched, and the curved substrate, the adhesive layer, and the curved touch sensor plate are attached together.

A method for processing an object containing moisture is provided to efficiently remove the moisture and to prevent re-adsorption of the moisture. In particular, the method has a step of removing the moisture contained in the object in an atmosphere containing excited hydrogen, deuterium, deuterated hydrogen, or tritium.

A coated chewing gum comprising a core of chewing gum and a coating comprising a coating material and one or more active substance(s) in solid form. The use of an active substance in solid form in the coating of a coated chewing gum provides a fast onset of the effect, a better stability of the active substance, and an increased effect thereof in al chewing phases.

A semiconductor device includes an element isolation film, which exhibits less variations in the height dimension from the surface of the substrate and has a desired height dimension from the surface of the substrate. A process for manufacturing a semiconductor device includes: providing a predetermined pattern of a silicon nitride film and a protective film which covers the silicon nitride film, on a semiconductor substrate; selectively etching the semiconductor substrate using the protective film as a mask to form a trenched portion; removing the protective film to expose the silicon nitride film; depositing an element isolation film, so as to fill the trenched portion therewith and cover the silicon nitride film; removing the element isolation film formed on the silicon nitride film by polishing thereof until the silicon nitride film is exposed; and removing the silicon nitride film.

A wafer is produced from an ingot by confirming whether or not an inclined c-axis of the ingot and a second orientation flat of the ingot are perpendicular to each other, and detecting a processing feed direction perpendicular to the direction in which the c-axis is inclined. The method includes performing sampling irradiation of the ingot with a laser beam, along a direction parallel to the second orientation flat and a plurality of directions inclined clockwise and counterclockwise by respective predetermined angles from the second orientation flat, thereby forming a plurality of sampled reduced strength areas in the ingot; measuring the number of nodes which exist per unit length on each of the sampled reduced strength areas, and determining a direction in which the sampled reduced strength area where the measured number of nodes is zero extends as a processing feed direction.

A method for processing an object containing moisture is provided to efficiently remove the moisture and to prevent re-adsorption of the moisture. In particular, the method has a step of removing the moisture contained in the object in an atmosphere containing excited hydrogen, deuterium, deuterated hydrogen, or tritium.

The present teaching provides a nonaqueous electrolytic solution secondary battery in which both a satisfactory high-rate characteristic and a high cycle characteristic (prevention of decrease in capacity) are realized. The nonaqueous electrolytic solution secondary battery of the present teaching includes a positive electrode provided with a positive electrode active material layer, a negative electrode provided with a negative electrode active material layer, and a nonaqueous electrolytic solution. The negative electrode active material layer includes a negative electrode active material and carbon black. A coating film made of a lithium transition metal composite oxide having lithium ion conductivity is formed on at least part of a surface of the carbon black.