72results about How to "Desired thickness" patented technology

A thermal barrier liner is preferably spray coated onto the internal surface of a container. The liner is provided in embodiments including a closed cell substrate, a base layer having gas or liquid filled microcapsules, a base layer having microencapsulated solid-liquid phase change material, or combinations thereof. For the closed cell substrate embodiment, when the liner is under pressure within the container prior to the container being opened, the liner maintains a minimum thickness. When the container is opened and as pressure is released within the container, the liner expands to achieve equilibrium. The liner can be supplemented with a foaming agent to create cellular structures. Voids created by the microcapsules enhance the thermal barrier characteristics of the liner. The phase change material changes phase from a solid to a liquid state upon absorbing heat.

In a method of manufacturing a hollow stabilizer, a pipe compressing step of compressing an electroseamed pipe in a temperature range of a hot state or a warm state so as to make a rate of a thickness with respect to an outer diameter between 18 and 35% is performed, and a forming step of forming the compressed electroseamed pipe in a stabilizer shape in a cold state is executed. Next, a step of applying a heat treatment to a half-finished stabilizer is performed, a shot peening step of impacting a shot on the half-finished stabilizer is performed, and a step of coating the half-finished stabilizer is performed.

In manufacturing thinned semiconductor chips by grinding a semiconductor wafer supported on a rigid support substrate, in order to remove the semiconductor wafer or semiconductor chips from the support substrate without damage to the semiconductor wafer or semiconductor chips, a semiconductor wafer at its surface is bonded on a light-transmissive support substrate through an adhesive layer having an adhesion force that is reduced upon exposure to light radiation, thereby exposing the back surface of the semiconductor wafer. A tape is bonded to the backside of the semiconductor wafer integrated with the support substrate after grinding, wherein the tape is supported at the periphery. Before or after bonding of the tape, light radiation is applied to the adhesive layer at a side close to the support substrate to reduce the adhesion force in the adhesion layer. Thereafter, the support substrate and adhesive layer is removed from the surface of the semiconductor wafer, leaving the semiconductor wafer held by the tape and frame. The semiconductor wafer supported by the tape and frame is cut at streets into individual semiconductor chips.

A method for processing an object containing moisture is provided to efficiently remove the moisture and to prevent re-adsorption of the moisture. In particular, the method has a step of removing the moisture contained in the object in an atmosphere containing excited hydrogen, deuterium, deuterated hydrogen, or tritium.