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1110 results about "Noble gas" patented technology

The noble gases (historically also the inert gases; sometimes referred to as aerogens) make up a group of chemical elements with similar properties; under standard conditions, they are all odorless, colorless, monatomic gases with very low chemical reactivity. The six naturally occurring noble gases are helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), and the radioactive radon (Rn). Oganesson (Og) is variously predicted to be a noble gas as well or to break the trend due to relativistic effects; its chemistry has not yet been investigated.

Plasma process with photoresist mask pretreatment

A method for etching features in a dielectric layer through a photoresist (PR) mask is provided. The PR mask is patterned using laser light having a wavelength not more than 193 nm. The PR mask is pre-treated with a noble gas plasma, and then a plurality of cycles of a plasma process is provided. Each cycle includes a deposition phase that deposits a deposition layer over the PR mask, the deposition layer covering a top and sidewalls of mask features of the PR mask, and a shaping phase that shapes the deposition layer deposited over the PR mask.
Owner:LAM RES CORP

METHOD OF DEPOSITING DIELECTRIC FILM HAVING Si-N BONDS BY MODIFIED PEALD METHOD

A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the silicon precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.
Owner:ASM JAPAN

Method of depositing dielectric film having Si-N bonds by modified peald method

A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the silicon precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.
Owner:ASM JAPAN

Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond

A method of forming a dielectric film having Si—C bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: (i) adsorbing a precursor on a surface of a substrate; (ii) reacting the adsorbed precursor and a reactant gas on the surface; and (iii) repeating steps (i) and (ii) to form a dielectric film having at least Si—C bonds on the substrate. The precursor has a Si—C—Si bond in its molecule, and the reactant gas is oxygen-free and halogen-free and is constituted by at least a rare gas.
Owner:ASM IP HLDG BV

Method of depositing dielectric film by modified peald method

A method of forming a film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.
Owner:ASM JAPAN

Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control

A method of forming a dielectric film having Si—C bonds and / or Si—N bonds on a semiconductor substrate by cyclic deposition, includes: (i) conducting one or more cycles of cyclic deposition in a reaction space wherein a semiconductor substrate is placed, using a Si-containing precursor and a reactant gas; and (ii) before or after step (i), applying a pulse of RF power to the reaction space while supplying a rare gas and a treatment gas without supplying a Si-containing precursor, whereby a dielectric film having Si—C bonds and / or Si—N bonds is formed on the semiconductor substrate.
Owner:ASM IP HLDG BV

Method for forming dielectric film in trenches by PEALD using H-containing gas

A method for forming a dielectric film in a trench on a substrate by plasma-enhanced atomic layer deposition (PEALD) performs one or more process cycles, each process cycle including: (i) feeding a silicon-containing precursor in a pulse; (ii) supplying a hydrogen-containing reactant gas at a flow rate of more than about 30 sccm but less than about 800 sccm in the absence of nitrogen-containing gas; (iii) supplying a noble gas to the reaction space; and (iv) applying RF power in the presence of the reactant gas and the noble gas and in the absence of any precursor in the reaction space, to form a monolayer constituting a dielectric film on a substrate at a growth rate of less than one atomic layer thickness per cycle.
Owner:ASM IP HLDG BV

Method For Depositing an Amorphous Carbon Film with Improved Density and Step Coverage

A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
Owner:APPLIED MATERIALS INC

Method of depositing dielectric film by modified PEALD method

A method of forming a film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration.
Owner:ASM JAPAN

Film-forming method, method of manufacturing semiconductor device, semiconductor device, method of manufacturing display device, and display device

Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%≦Pr<100%, and generating a plasma within the plasma processing chamber so as to form a film of silicon oxide on a substrate to be processed.
Owner:ADVANCED LCD TECH DEVMENT CENT

Plasma processing apparatus and plasma processing method

A plasma processing apparatus includes a beam-shaped spacer 7 which is placed at an upper opening of a chamber 3 opposed to a substrate 2 to support a dielectric plate 8. The dielectric plate 8 is supported by the beam-shaped spacer 7. In the beam-shaped spacer 7 are provided a plurality of process gas introducing ports 31, 36 which have a depression angle θd and which are provided downward and directed toward the substrate 2, as well as a plurality of rare gas introducing ports 41 having a elevation angle θe directed toward the dielectric plate 8. Improvement of processing rates such as etching rate as well as effective suppression of wear of the dielectric plate 8 can be achieved.
Owner:PANASONIC CORP

Process for producing nano-scaled platelets and nanocompsites

Disclosed is a process for exfoliating a layered material to produce nano-scaled platelets having a thickness smaller than 100 nm, typically smaller than 10 nm, and often between 0.34 nm and 1.02 nm. The process comprises: (a) subjecting a layered material to a gaseous environment at a first temperature and first pressure sufficient to cause gas species to penetrate between layers of the layered material, forming a gas-intercalated layered material; and (b) subjecting the gas-intercalated layered material to a second pressure, or a second pressure and a second temperature, allowing gas species to partially or completely escape from the layered material and thereby exfoliating the layered material to produce partially delaminated or totally separated platelets. The gaseous environment preferably contains only environmentally benign gases that are reactive (e.g., oxygen) or non-reactive (e.g., noble gases) with the layered material. The process can also include dispersing the platelets in a matrix material to form a nanocomposite.
Owner:GLOBAL GRAPHENE GRP INC

Substrate processing apparatus and method of processing substrate

A substrate processing apparatus includes a stage provided in a chamber, a shower head in which a plurality of slits are formed and which is opposed to the stage, a first gas supply part which supplies a first gas to a space between the stage and the shower head via the plurality of slits, and a second gas supply part which supplies a second gas which is not a noble gas to a region below the stage, wherein the second gas is the same gas as one of a plurality of kinds of gases constituting the first gas in a case where the first gas is a mixture gas constituted of the plurality of kinds of gases, and the second gas is the same gas as the first gas in a case where the first gas is a single kind of gas.
Owner:ASM IP HLDG BV

Method For Trimming Carbon-Containing Film At Reduced Trimming Rate

ActiveUS20150118846A1Reduce trimming rateReducing trimming rateElectric discharge tubesSemiconductor/solid-state device manufacturingNoble gasNitrogen
A method for trimming a carbon-containing film includes: (i) providing a substrate having a carbon-containing film formed thereon; (ii) supplying a trimming gas and a rare gas to the reaction space, which trimming gas includes an oxygen-containing gas; and (iii) applying RF power between the electrodes to generate a plasma using the trimming gas and the rare gas and to thereby trim the carbon-containing film while controlling a trimming rate at 55 nm / min or less as a function of at least one parameter selected from the group consisting of a flow rate of an oxygen-containing gas, a flow rate of nitrogen-containing gas to be added to the oxygen-containing gas, pressure in the reaction space, RF power, a duty cycle of RF power, a distance between the electrodes, and a temperature of a susceptor on which the substrate is placed.
Owner:ASM IP HLDG BV

Method to generate a plasma stream for performing electrosurgery

An electrosurgical device to generate a plasma stream and method to perform endoscopic or laparoscopic surgery within a patient's body comprising an electrosurgical generator coupled to a electrical power source to supply power to the electrosurgical device and a plasma generator including an electrode operatively coupled to the electrosurgical generator to receive electrical energy therefrom and concentrically disposed within an inner noble gas conduit to form a plasma channel coupled to a noble gas source to feed noble gas to the inner noble gas conduit and an outer electronegative gas conduit disposed in surrounding coaxial relation relative to the inner noble gas conduit to cooperatively form an electronegative gas channel therebetween coupled to a gas source to feed electronegative gas to the electronegative gas channel or an outer aspiration conduit disposed in surrounding coaxial relation relative to the inner noble gas conduit to cooperatively form an aspiration channel therebetween coupled to a negative pressure source such that the electrode heats the noble gas to at least partially ionize the noble gas to generate the plasma stream to be directed to the surgical site to perform the surgical procedure while the electronegative gas sustains the plasma stream at the surgical site and dilutes the noble gas adjacent the surgical site or the negative pressure source removes fluid and solid debris from the surgical site respectively.
Owner:BOVIE MEDICAL CORP

Dry etching method for metal film

A method for performing dry etching on a metal film containing Pt via a mask layer includes performing dry etching on the metal film by generating a plasma of an etching gas including a gaseous mixture of H2 gas, CO2 gas, methane gas and rare gas. With the dry etching method, it is possible to make a vertical sidewall of a hole or trench more vertical without using a halogen gas.
Owner:TOKYO ELECTRON LTD

Microelectronic mechanical system and methods

The current invention provides for encapsulated release structures, intermediates thereof and methods for their fabrication. The multi-layer structure has a capping layer, that preferably comprises silicon oxide and / or silicon nitride, and which is formed over an etch resistant substrate. A patterned device layer, preferably comprising silicon nitride, is embedded in a sacrificial material, preferably comprising polysilicon, and is disposed between the etch resistant substrate and the capping layer. Access trenches or holes are formed in to capping layer and the sacrificial material are selectively etched through the access trenches, such that portions of the device layer are release from sacrificial material. The etchant preferably comprises a noble gas fluoride NGF2x (wherein Ng=Xe, Kr or Ar: and where x=1, 2 or 3). After etching that sacrificial material, the access trenches are sealed to encapsulate released portions the device layer between the etch resistant substrate and the capping layer. The current invention is particularly useful for fabricating MEMS devices, multiple cavity devices and devices with multiple release features.
Owner:SILICON LIGHT MACHINES CORP

Method of fabricating an SOI wafer and SOI wafer fabricated thereby

In a method of fabricating an SOI wafer, an oxide film is formed on the surface of at least one of two silicon wafers; hydrogen ions or rare gas ions are implanted into the upper surface of one of the two silicon wafers in order to form a fine bubble layer (enclosed layer) within the wafer; the ion-implanted silicon wafer is superposed on the other silicon wafer such that the ion-implanted surface comes into close contact with the surface of the other silicon wafer via the oxide film; heat treatment is performed in order to delaminate a portion of the ion-implanted wafer while the fine bubble layer is used as a delaminating plane, in order to form a thin film to thereby obtain an SOI wafer. In the method, a defect layer at the delaminated surface of the thus-obtained SOI wafer is removed to a depth of 200 nm or more through vapor-phase etching, and then mirror polishing is performed. Therefore, the obtained SOI wafer has an extremely low level of defects and a high thickness uniformity.
Owner:SHIN-ETSU HANDOTAI CO LTD

Low-field MRI

A method of imaging using magnetic resonance includes administering hyperpolarized noble gas to a subject in a region to be imaged, applying a magnetic field of a magnitude between about 0.0001 Tesla and about 0.1 Tesla to the subject at least in the region of the subject to be imaged, detecting a spatial distribution of magnetic resonance signals of the hyperpolarized noble gas in the subject, and producing a representation of the spatial distribution.
Owner:THE BRIGHAM & WOMEN S HOSPITAL INC

Electrosurgical device to generate a plasma stream

An electrosurgical device to generate a plasma stream for performing electrosurgery on a surgical site on a patient comprising an electrosurgical generator coupled to a electrical power source to supply power to the electrosurgical device and a plasma generator including an electrode operatively coupled to the electrosurgical generator to receive electrical energy therefrom and concentrically disposed within an inner noble gas conduit to form a plasma channel coupled to a noble gas source to feed noble gas to the inner noble gas conduct, an intermediate electronegative gas conduit disposed in surrounding coaxial relation relative to the noble gas conduit to cooperatively form an electronegative gas channel therebetween coupled to a gas source to feed electronegative gas to the electronegative gas channel and an outer aspiration conduit disposed in surrounding coaxial relation relative to the intermediate electronegative gas conduit to cooperatively form an aspiration channel therebetween coupled to a negative pressure source such that the electrode heats the noble gas to at least partially ionize the noble gas to generate the plasma stream to be directed to the surgical site to perform the surgical procedure while the electronegative gas maintains or sustains the plasma stream and the negative pressure source removes fluid and solid debris from the surgical site.
Owner:BOVIE MEDICAL CORPORATION

Low emission energy source

A power generator provides power with minimal CO2, NOx, CO, CH4, and particulate emissions and substantially greater efficiency as compared to traditional power generation techniques. Specifically nitrogen is removed from the combustion cycle, either being replaced by a noble gas as a working gas in a combustion engine. The noble gas is supplemented with oxygen and fuel, to provide a combustion environment substantially free of nitrogen or alternatively working in 100% oxygen-fuel combustion environments. Upon combustion, Very little to no nitrogen is present, and thus there is little production of NOx compounds. Additionally, the exhaust constituents are used in the production of power through work exerted upon expansion of the exhaust products, and the exhaust products are separated into their constituents of noble gas, water and carbon dioxide. The carbon dioxide may be used in conjunction with a biomass to accelerate the biomass growth and to recover the oxygen enriched air resulting from algae photosynthesis for enhancing the operation of the power generator using the as Biomass for processing into methanol / ethanol and biological oils as fuel for the power generator. The biomass fuel is seen as a solar fuel and may be used in conjunctions with other solar fuels like heated thermal oil and others, as well as clean fossil fuels to optimize to clean, and efficient operation of the power generator in various regulatory contexts.
Owner:BRIGHTSOURCE ENERGY

Automotive discharge bulb and automotive headlamp

An automotive discharge bulb having a light emitting tube includes a ceramic tube with paired electrodes oppositely placed, and contains a light emitting material and starting rare gas. A transversal section of the ceramic tube is longitudinally elongated. Because the capacity of an enclosed space of the ceramic tube is small, after discharging begins, the enclosed space temperature increases. Consequently, the ceramic tube has a good luminous flux rising characteristic. Because of the small surface area of the ceramic tube, the load imposed on the wall surface increases. Consequently, the ceramic tube has good luminous efficiency. In the ceramic tube having a longitudinally elongated transversal section, an arc generated into an upwardly convex shape and the tube wall do not make contact. Thermal shock resistance required of the ceramic tube is alleviated, durability is enhanced, and the ceramic tube is made of a ceramic material hitherto unusable.
Owner:KOITO MFG CO LTD

Mass production of nano-scaled platelets and products

ActiveUS7785492B1Reduce necessary intercalation timeSmall thicknessMaterial nanotechnologyGraphiteNoble gasGraphite
Disclosed is a process for exfoliating a layered material to produce nano-scaled platelets having a thickness smaller than 100 nm, typically smaller than 10 nm, and often between 0.34 nm and 1.02 nm. The process comprises: (a) charging a layered material to an intercalation chamber comprising a gaseous environment at a first temperature and a first pressure sufficient to cause gas species to penetrate into the interstitial space between layers of the layered material, forming a gas-intercalated layered material; and (b) operating a discharge valve to rapidly eject the gas-intercalated layered material through a nozzle into an exfoliation zone at a second pressure and a second temperature, allowing gas species residing in the interstitial space to exfoliate the layered material to produce the platelets. The gaseous environment preferably contains only environmentally benign gases that are reactive (e.g., oxygen) or non-reactive (e.g., noble gases) with the layered material. The process can additionally include dispersing the platelets in a matrix material to form a nanocomposite. The process also can include an additional process of re-compressing the nana-scaled platelets into a product such as a flexible graphite sheet.
Owner:GLOBAL GRAPHENE GRP INC

Method for manufacturing semiconductor device

After a gate insulating film is formed over a gate electrode, in order to improve the quality of a microcrystalline semiconductor film which is formed in an early stage of deposition, a film near an interface with the gate insulating film is formed under a first deposition condition in which a deposition rate is low but the quality of a film to be formed is high, and then, a film is further deposited under a second deposition condition in which a deposition rate is high. Then, a buffer layer is formed to be in contact with the microcrystalline semiconductor film. Further, plasma treatment with a rare gas such as argon or hydrogen plasma treatment is performed before formation of the film under the first deposition condition for removing adsorbed water on a substrate.
Owner:SEMICON ENERGY LAB CO LTD
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