The invention belongs to the technical field of
semiconductor devices and particularly relates to a flexible charge trap storage based on oxidized
graphene and a preparation method thereof. According to the flexible charge trap storage and the preparation method, the storage relies on the three-layer structure of an existing charge trap storage, namely, the tunneling layer / charge trap layer / control
gate dielectric layer structure, a flexible substrate is utilized as a substrate, and the oxidized
graphene is adopted to replace the traditional charge trap layer. The method comprises the specific preparation steps of using a low-temperature
atomic layer deposition method, firstly, depositing the
dielectric tunneling layer on the flexible substrate,
coating the flexible substrate with the oxidized
graphene in a rotating mode under the indoor temperature situation, and then, similarly adopting the low-temperature
atomic layer deposition technology to grow and control the gate dielectrics. The flexible charge trap storage and the preparation method have the advantages that the low-temperature
atomic layer deposition technology and the process of
coating the flexible substrate with the oxidized graphene at the indoor temperature in the rotating mode are used, the characteristics of the oxidized graphene is utilized, window erasing is ensured, meanwhile, the process thermal budget is greatly reduced, and practical and reliable schemes are provided for flexible electronic devices in future.