18663 results about "Silicate" patented technology

An alkali aluminosilicate glass that is chemically strengthened and has a down-drawable composition. The glass has a melting temperature less than about 1650° C. and a liquidus viscosity of at least 130 kpoise and, in one embodiment, greater than 250 kpoise. The glass undergoes ion exchange at relatively low temperatures to a depth of at least 30 μm.

The invention provides long-persistent phosphors, methods for their manufacture and phosphorescent articles. The invention also provides a method for generating a long-persistent phosphorescence at a selected color. The phosphors of the invention may be alkaline earth aluminates, alkaline earth silicates, and alkaline earth aluminosilicates. The phosphors include those activated by cerium. The phosphors also include those in which persistent energy transfer occurs from a donor ion to an acceptor ion, producing persistent emission largely characteristic of the acceptor ion.

By conducting a high temperature annealing in a nitrogen atmosphere at a temperature at which a hafnium silicate film undergoes no phase separation, hydrogen contained in the film is removed and prevention of boron penetration is made possible. The present invention provides a method for forming a thin film including a step of forming a hafnium silicate film on a substrate by an atomic layer deposition method and a step of carrying out thermal treatment on the hafnium silicate film at a thermal treatment temperature equal to or higher than a temperature at which hydrogen contained in the hafnium silicate film is removed and lower than a temperature at which the hafnium silicate film undergoes no phase separation, and a method for fabricating a semiconductor device for forming a gate dielectric film using the method for forming a thin film.

A method for depositing a thin film onto a substrate is disclosed. In particular, the method forms a transitional metal silicate onto the substrate. The transitional metal silicate may comprise a lanthanum silicate or yttrium silicate, for example. The transitional metal silicate indicates reliability as well as good electrical characteristics for use in a gate dielectric material.

Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a metal source chemical, a silicon source chemical and an oxidizing agent. In preferred embodiments, an alkyl amide metal compound and a silicon halide compound are used. Methods according to preferred embodiments can be used to form hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surfaces comprising high aspect ratio features (e.g., vias and / or trenches).

The invention relates to a light source comprising a light-emitting element, which emits light in a first spectral region, and comprising a luminophore, which comes from the group of alkaline-earth orthosilicates and which absorbs a portion of the light emitted by the light source and emits light in another spectral region. According to the invention, the luminophore is an alkaline-earth orthosilicate, which is activated with bivalent europium and whose composition consists of: (2-x-y)SrOx(Ba, Ca)O(1-a-b-c-d)SiO2aP2O5bAl2O3cB2O3dGeO2:yEu<2+> and / or (2-x-y)BaOx((Sr, Ca)O(1-a-b-c-d)SiO2aP2O5bAl2O3cB2O3dGeO2:yEu<2+>. The desired color (color temperature) can be easily adjusted by using a luminophore of the aforementioned type. The light source can contain an additional luminophore selected from the group of alkaline-earth aluminates, activated with bivalent europium and / or manganese, and / or can contain an additional red-emitting luminophore selected from the group Y(V, P, Si)O4:Eu or can contain alkaline-earth magnesium disilicate.

A method is described for selectively etching a high k dielectric layer that is preferably a hafnium or zirconium oxide, silicate, nitride, or oxynitride with a selectivity of greater than 2:1 relative to silicon oxide, polysilicon, or silicon. The plasma etch chemistry is comprised of one or more halogen containing gases such as CF4, CHF3, CH2F2, CH3F, C4F8, C4F6, C5F6, BCl3, Br2, HF, HCl, HBr, HI, and NF3 and leaves no etch residues. An inert gas or an inert gas and oxidant gas may be added to the halogen containing gas. In one embodiment, a high k gate dielectric layer is removed on portions of an active area in a MOS transistor. Alternatively, the high k dielectric layer is used in a capacitor between two conducting layers and is selectively removed from portions of an ILD layer.

A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow / yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow / yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1−a1−b1−xBaa1Cab1Eux)2SiO4 (0≦a1≦0.3, 0≦b1≦0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Novel orange phosphors are disclosed having the comprise silicate-based compounds having the formula (Sr,A1)x,(Si,A2)(O,A3)2+x:Eu2+, where A1 is at least one divalent cation (a 2+ ion) including Mg, Ca, Ba, or Zn, or a combination of 1+ and 3+ cations; A2 is a 3+, 4+, or 5+ cation, including at least one of B, Al, Ga, C, Ge, P; A3 is a 1−, 2−, or 3− anion, including F, Cl, and Br; and x is any value between 2.5 and 3.5, inclusive. The formula is written to indicate that the A1 cation replaces Sr; the A2 cation replaces Si, and the A3 anion replaces O. These orange phosphors are configured to emit visible light having a peak emission wavelength greater than about 565 nm. They have applications in white LED illumination systems, plasma display panels, and in orange and other colored LED systems.

Sealant compositions comprising an alkali swellable latex and a pH increasing material and methods of using the same to service a wellbore are provided. In one embodiment, the sealant composition can be used in a wellbore and includes an alkali swellable latex and a pH increasing material. The sealant composition can have a pH of from about 7 to about 14. In other embodiments, the pH increasing material includes a base-producing material. The base-producing material can include alkali and alkali earth metal carbonates, alkali and alkali earth metal bicarbonates, alkali and alkali earth metal hydroxides, alkali and alkali earth metal oxides, alkali and alkali earth metal phosphates, alkali and alkali earth metal hydrogen phosphates, alkali and alkaline earth metal sulphides, alkali and alkaline earth metal salts of silicates, alkali and alkaline earth metal salts of aluminates, water soluble or water dispersible organic amines, polymeric amine, amino alcohols, or combinations thereof.

Tunable dielectric materials including an electronically tunable dielectric ceramic and a low loss glass additive are disclosed. The tunable dielectric may comprise a ferroelectric perskovite material such as barium strontium titanate. The glass additive may comprise boron, barium, calcium, lithium, manganese, silicon, zinc and / or aluminum-containing glasses having dielectric losses of less than 0.003 at 2 GHz. The materials may further include other additives such as non-tunable metal oxides and silicates. The low loss glass additive enables the materials to be sintered at relatively low temperatures while providing improved properties such as low microwave losses and high breakdown strengths.

A process for sequestering carbon dioxide, which includes reacting a silicate based material with an acid to form a suspension, and combining the suspension with carbon dioxide to create active carbonation of the silicate-based material, and thereafter producing a metal salt, silica and regenerating the acid in the liquid phase of the suspension.

The invention discloses a masonry cement with high strength and water retention. According to the weight percentage, the masonry cement consists of 21-98.99 percent of porland cement clinker, 0-50 percent of blending materials, 1-12 percent of gypsum, 0.01-2 percent of cellulose ether and 0-15 percent of other additives. With the cellulose ether of high water retention material added, the water retention of the masonry cement is greatly improved. At the same time, through breaking through the limitation that the using amount of the blending materials in the original masonry cement is not less than 50 percent, the using amount of the blending materials is lowered to be 50 percent below to improve the strength of novel masonry cement. The strength of the prepared masonry cement is high, and the masonry cement with the strength grades of 12.5, 22.5, 52.5R, 62.5, 62.5R, etc. can be made. The hard problems of using low-grade blending materials to produce masonry cement with high water retention and using low- grade strength masonry cement of 12.5 and 22.5 to produce high-grade strength building mortar are solved.

A low dielectric constant, patterned, nanoporous material and a method of forming the material. The material is formed by depositing a layer onto a substrate, said layer comprising a reactive organosilicate material, a porogen, an initiator, and a solvent; exposing portions of the layer to energy (e.g., thermal energy or electromagnetic radiation) to change the solubility of portions of the organosilicate material with respect to the solvent; selectively removing more soluble portions of the layer to generate a relief pattern; and decomposing the porogen to thereby generate a nanoporous organosilicate layer.