The invention discloses a method for preparing a
raw material for vapor-method aluminum
nitride crystal growth. The method comprises the specific steps of soaking a
tungsten crucible and a
crucible cover which are required to be used in
aqua regia for 30-120 minutes, taking out the
tungsten crucible and the crucible cover, cleanly flushing, and
drying for later use; adding aluminum
nitride powder into the
tungsten crucible, and carrying out multi-layer compacting treatment; covering the tungsten crucible with the crucible cover, putting in a tungsten-mesh
heating furnace, vacuumizing until the pressure is 1*10<-3>Pa, inflating with high-purity
nitrogen gas until the pressure is 30kPa, heating to the temperature of 300 DEG C, keeping the temperature constant for 1 hour, heating to the temperature of 800 DEG C, and keeping the temperature constant for 1 hour; inflating the tungsten-mesh
heating furnace with high-purity
nitrogen gas until the pressure is 50kPa, heating to the temperature of 1800 DEG C, keeping the temperature constant for 5 hours, heating to the temperature of 2,050 DEG C, and keeping the temperature constant for 8 hours; cooling to
room temperature, thereby obtaining an aluminum
nitride sinter cake which serves as the
raw material for vapor-method aluminum nitride
crystal growth. According to the method, a compact sintered body is prepared from the aluminum nitride
powder, so as to control vapor-
phase reaction, thus the requirements of RVT (Physical Vapor Transport)-method aluminum nitride
crystal material growth for raw materials are met.