1945 results about "Inductively coupled plasma" patented technology

A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using inductively coupled plasma chemical vapor deposition (ICP-CVD). After the ICP-CVD, excimer laser annealing (ELA) is performed while increasing energy by predetermined steps. A poly-Si active layer and a SiO2 gate insulating layer are deposited at a temperature of about 150° C. using ICP-CVD. The poly-Si has a large grain size of about 3000 Å or more. An interface trap density of the SiO2 can be as high as 1011 / cm2. A transistor having good electrical characteristics can be fabricated at a low temperature and thus can be formed on a heat tolerant plastic substrate.

Improvements have been made for collection and focusing of ions generated from atmospheric pressure sources such as electrospray, atmospheric pressure chemical ionization, inductively coupled plasma, discharge, photoionization and atmospheric pressure matrix assisted laser desorption ionization. A high transmission electro-optical surface is placed between the source regions and the focusing regions to optimize the field geometries and strengths in each respective region. Compression ratios of greater than 5000 are capable of transferring virtually all ions from large volume dispersive ion regions into ion beam cross-sections of less than 1 mm. Embodiments of this invention are methods and devices for improving sensitivity of mass spectrometry when coupled to atmospheric pressure ionization sources.

Disclosed herein is a high-frequency induction plasma reactor apparatus for producing nano-powder, which is configured to continuously manufacture nano-powder in large quantities using solid-phase powder as a starting raw material and to manufacture high-purity nano-powder by completely vaporizing the material powder. The high-frequency induction plasma reactor apparatus comprises an upper body and a cover. The upper body is provided with a reaction pipe receiving a reactor extending vertically inside thereof, a high-frequency coil surrounding the outer periphery of the reaction pipe and a ceramic inner wall provided inside the reaction pipe. The ceramic inner wall is formed with a plurality of gas passing bores and defines a gas movement passage with the inner side wall of the reaction pipe therebetween for allowing the inflow of argon gas from the outside into the reactor. The cover is mounted to the upper end of the reactor and adapted to seal the reactor. The cover is provided with a powder injection tube communicating with the reactor.

Improvements have been made for collecting, focusing, and directing of ions and / or charged particles generated at atmospheric or near atmospheric pressure sources, such as but not limited to, electrospray; atmospheric pressure discharge ionization, chemical ionization, photoionization, and matrix assisted laser desorption ionization; and inductively coupled plasma ionization. A multiple-aperture laminated structure is place at the interface of two pressure regions. Electric fields geometries and strengths across the laminated structure and diameters of the apertures; all of which act to optimize the transfer of the ions from the higher pressure region into the lower pressure region while reducing the gas-load on the lower pressure region. Embodiments of this invention are methods and devices for improving sensitivity of mass spectrometry when coupled to atmospheric, near atmospheric, or higher pressure ionization sources by reducing the gas-load on the vacuum system.

A method and apparatus for plasma waste disposal of hazardous waste material, where the hazardous material is volatilized under vacuum inside a containment chamber to produce a pre-processed gas as input to a plasma furnace including a plasma-forming region in which a plasma-forming magnetic field is produced. The pre-processed gas is passed at low pressure and without circumvention through the plasma-forming region and is directly energized to an inductively coupled plasma state such that hazardous waste reactants included in the pre-processed gas are completely dissociated in transit through the plasma-forming region. Preferably, the plasma-forming region is shaped as a vacuum annulus and is dimensioned such that there is no bypass by which hazardous waste reactants in the pre-processed gas can circumvent the plasma-forming region. The plasma furnace is powered by a high frequency power supply outputting power at a fundamental frequency. The power supply contains parasitic power dissipation mechanisms to prevent non-fundamental, parasitic frequencies from destabilizing the fundamental frequency output power. These power loss mechanisms use either distributed resistance or frequency-selective power-loss devices to prevent parasitic oscillations from instantaneously turning on the high frequency power oscillator at non-fundamental frequencies.