32 results about "Atmospheric pressure discharge" patented technology

The invention discloses a plasma-enhanced oxidation roasting device for synthesizing high-nickel positive electrode materials for lithium-ion batteries. The plasma-enhanced oxidation roasting device includes a quartz tube furnace and an atmospheric pressure discharge plasma generator; the quartz tube type The furnace includes a quartz tube, an inlet pipe at one end of the quartz tube, and an exhaust pipe at the other end of the quartz tube; the atmospheric pressure discharge plasma generator includes a high voltage power supply and an atmospheric pressure built in the quartz tube furnace A discharge plasma generator; the gas pressure in the quartz tube furnace is maintained at normal pressure during the reaction process. The device is of great significance for improving the comprehensive performance of high-nickel cathode materials, especially for reducing the cation mixing degree of high-nickel cathode materials, improving the cycle performance and rate performance of materials, reducing the alkalinity of materials and improving the processing performance of materials.

The invention relates to a method for improving the enzyme activity by utilizing an atmospheric pressure discharge plasma, belonging to the field of cold plasma technology application. The method is characterized by comprising the following steps in sequence: preparing enzyme solution, selecting the type of an atmospheric pressure discharge plasma generator and setting working parameters, and treating the enzyme solution by utilizing the atmospheric pressure discharge plasma. The invention has the advantages of high efficiency and convenient change of the enzyme activity.

The invention discloses a method for preparing black silicon through atmospheric pressure discharge plasma jet. The method comprises the steps that a silicon wafer is placed in a plasma jet dischargesolution, and the surface of the silicon wafer is oxidized; the silicon wafer is washed in HF and ethanol solutions in order, and then is put into a NaOH solution for polishing; the silicon wafer is put into the mixture of NaOH and ethanol for texturing, and then is washed; and the silicon wafer is put into a plasma jet discharge mixed solution to prepare black silicon, and then washing and dryingare carried out, wherein the mixed solution comprises a metal salt catalyst and HF. The method has the advantages of low reaction device requirement, simple operation, low cost, normal temperature reaction, convenient large-scale production, stable generated H2O2 content, high practicability, wide applicability and remarkable economy benefit.

The invention discloses an electromagnetic field constraint plasma enhanced oxidation roasting device for synthesizing a high-nickel positive electrode material of a lithium ion battery, wherein the plasma enhanced oxidation roasting device comprises a quartz tube furnace and an atmospheric pressure discharge plasma generation device; the quartz tube furnace comprises a quartz tube, an air inlet pipe positioned at one end of the quartz tube, and an exhaust pipe positioned at the other end of the quartz tube; a deflection electromagnetic field is arranged in the quartz tube, and a reactant delivery region is arranged in the quartz tube; the deflection electromagnetic field enables active oxygen to deflect in the direction of the reactant delivery region; the atmospheric pressure discharge plasma generation device comprises a high-voltage power supply and an atmospheric pressure discharge plasma generator arranged in the quartz tube. The electromagnetic field constraint plasma enhanced oxidation roasting device has important significance for improving the comprehensive performance of the high-nickel positive electrode material, and especially has remarkable effects of reducing the cation mixing and discharging degree of the high-nickel positive electrode material, improving the cycling performance and the rate performance of the material, lowering the material alkalinity and improving the material processing performance.