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72359 results about "High voltage" patented technology

The term high voltage usually means electrical energy at voltages high enough to inflict harm on living organisms. Equipment and conductors that carry high voltage warrant particular safety requirements and procedures. In certain industries, high voltage means voltage above a particular threshold (see below). High voltage is used in electrical power distribution, in cathode ray tubes, to generate X-rays and particle beams, to demonstrate arcing, for ignition, in photomultiplier tubes, and in high power amplifier vacuum tubes and other industrial, military and scientific applications.

Power semiconductor devices and methods of manufacture

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.
Owner:SEMICON COMPONENTS IND LLC

Power semiconductor devices and methods of manufacture

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.
Owner:SEMICON COMPONENTS IND LLC

High voltage overhead transmission line line-inspection unmanned aerial vehicle photoelectric detection device

The invention relates to a high voltage overhead transmission line line-inspection unmanned aerial vehicle photoelectric detection device belonging to the technical field of power line inspection. The invention aims at solving the problem of single technology of the existing overhead transmission line line-inspection. The high voltage overhead transmission line line-inspection unmanned aerial vehicle photoelectric detection device mainly comprises an unmanned aerial vehicle, a GPS (global position system) inertial integrated attitude azimuth detection device, a damping device, a rotation detection nacelle, a ground data receiving processor and a controller. The high voltage overhead transmission line line-inspection unmanned aerial vehicle photoelectric detection device is characterized in that the GPS inertial integrated attitude azimuth detection device is arranged at the inner part of the unmanned aerial vehicle; the rotation detection nacelle is hung below the unmanned aerial vehicle by the damping device; a photoelectric stabilized platform is installed in the rotation detection nacelle; flexible combination of any two or more of a visible light camera, an ultraviolet ray imager and a full-digital dynamic thermal infrared imager and a laser ranging device are borne on the photoelectric stabilized platform; and the rotation detection nacelle is provided with a visible window. With the adoption of the high voltage overhead transmission line line-inspection unmanned aerial vehicle photoelectric detection device, a high voltage transmission line can be monitored, and a comprehensive and precise high voltage overhead transmission line line-inspection task is realized by combining interchange among a plurality of sensors.
Owner:CHANGCHUN UNIV OF SCI & TECH +1

Micro-LED based high voltage AC/DC indicator lamp

An AC / DC indicator lamp based on an array of micro-LEDs may be powered by a standard high voltage AC or DC power source. The indicator lamp has a low power consumption. The micro-LEDs are serially connected on a substrate with the total device area and power consumption compatible with a standard DC low voltage LED. A plurality of indicator lamps may be connected together in parallel to present a string of indicator lamps.
Owner:LED LIGHTING

Power semiconductor devices and methods of manufacture

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.
Owner:SEMICON COMPONENTS IND LLC

Intra-Bundle Power Line Carrier Current System

A system including associated equipment for transmitting radio-frequency power line carrier signals on high voltage ac or dc transmission lines within a multi-conductor bundle, one path for which is provided by one or more conductors located at the center of the bundle, and the other by the remaining conductors connected in electrical parallel and arrayed in a generally circular pattern around the center. Insulated conductor spacers hold the conductors in their symmetrical configuration and insulate the center conductor, allowing it to serve as a radio frequency path similar to that in a conventional coaxial cable. The system provides low attention, low vulnerability to external noise and low radiation of the carrier signal while providing redundant channels—three for ac transmission lines and two for bipolar dc transmission lines.
Owner:BARTHOLD LIONEL O +1

Photovoltaic power plant with distributed DC-to-DC power converters

A solar photovoltaic plant is disclosed where a number of distributed DC-to-DC converters are used in conjunction with a central DC-to-AC converter. Each DC-to-DC converter is dedicated to a portion of the photovoltaic array and tracks the maximum power point voltage thereof. The DC-to-DC converters also boost the photovoltaic voltage and regulate a DC output current for transmission to the central DC-to-AC converter. Five distinct advantages are had over the prior art. First, efficiencies in intra-field power collection are greatly improved by transferring power at higher DC voltages. Second, the number of independent photovoltaic maximum power point trackers in the power plant can be increased, in a cost effective manner, to optimize the overall photovoltaic array energy harvest. Third, each DC-to-DC converter output “looks” like a current source at the input of the DC-to-AC converter and therefore can be easily paralleled. Fourth, the current source nature of the DC-to-DC converter outputs enables the DC-to-AC converter to operate with a minimum, fixed DC bus voltage to provide maximum DC-to-AC power conversion efficiencies. And fifth, each distributed DC-to-DC converter can isolate a faulted portion of the photovoltaic array while the remainder of the array continues producing power.
Owner:PARKER INTANGIBLES LLC

Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structures

Device structures for a metal-oxide-semiconductor field effect transistor (MOSFET) that is suitable for operation at relatively high voltages and methods of forming same. The MOSFET, which is formed using a semiconductor-on-insulator (SOI) substrate, includes a channel in a semiconductor body that is self-aligned with a gate electrode. The gate electrode and semiconductor body, which are both formed from the monocrystalline SOI layer of the SOI substrate, are separated by a gap that is filled by a gate dielectric layer. The gate dielectric layer may be composed of thermal oxide layers grown on adjacent sidewalls of the semiconductor body and gate electrode, in combination with an optional deposited dielectric material that fills the remaining gap between the thermal oxide layers.
Owner:GLOBALFOUNDRIES INC
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