10709 results about "Dopant" patented technology

An OLED device comprises a cathode, an anode, and has therebetween a light emitting layer containing a host material and an emitting dopant material wherein the host includes a monoanthracene compound bearing aromatic groups in the 2-, 9-, and 10-positions and being further substituted or not with electron donating groups sufficient so as to provide an anthracene derivative that exhibits a measured oxidation potential of less than 1.28 V.

A silicon nitride film is formed on a substrate in a reaction chamber by introducing trisilane and a reactive nitrogen species into the chamber in separate pulses. A carbon precursor gas is also flowed into the chamber during introduction of the trisilane and / or during introduction of the reactive nitrogen species, or in pulses separate from the trisilane and reactive nitrogen species pulses. The carbon is used as a dopant in the silicon nitride film and advantageously allows a high stress silicon nitride film to be formed.

The invention relates to the use of an organic mesomeric compound as organic dopant for doping an organic semiconducting matrix material for varying the electrical properties thereof. In order to be able to handle organic semiconductors more easily in the production process and to be able to produce electronic components with doped organic semiconductors more reproducibly, a quinone or quinone derivative or a 1,3,2-dioxaborine or a 1,3,2-dioxaborine derivative may be used as a mesomeric compound, which under like evaporation conditions has a lower volatility than tetrafluorotetracyanoquinonedimethane (F4TCNQ).

Disclosed herein are red phosphorescent compounds of the following Formulas 1 to 4: wherein  is  R1, R2 and R3 are independently a C1-C4 alkyl group, R4, R5, R6 and R7 are independently selected from hydrogen, C1-C4 alkyl groups and C1-C4 alkoxy groups, and  is selected from 2,4-pentanedione, 2,2,6,6,-tetramethylheptane-3,5-dione, 1,3-propanedione, 1,3-butanedione, 3,5-heptanedione, 1,1,1-trifluoro-2,4-pentanedione, 1,1,1,5,5,5-hexafluoro-2,4-pentanedione, and 2,2-dimethyl-3,5-hexanedione; wherein  is  R1 and R2 are independently selected from C1-C4 alkyl groups and C1-C4 alkoxy groups, R3, R4, R5 and R6 are independently selected from hydrogen, C1-C4 alkyl groups and C1-C4 alkoxy groups, and  is selected from 2,4-pentanedione, 2,2,6,6,-tetramethylheptane-3,5-dione, 1,3-propanedione, 1,3-butanedione, 3,5-heptanedione, 1,1,1-trifluoro-2,4-pentanedione, 1,1,1,5,5,5-hexafluoro-2,4-pentanedione and 2,2-dimethyl-3,5-hexanedione; wherein  is  R1 and R2 are independently selected from C1-C4 alkyl groups and C1-C4 alkoxy groups, R3, R4, R5 and R6 are independently selected from hydrogen, C1-C4 alkyl groups and C1-C4 alkoxy groups, and  is selected from 2,4-pentanedione, 2,2,6,6,-tetramethylheptane-3,5-dione, 1,3-propanedione, 1,3-butanedione, 3,5-heptanedione, 1,1,1-trifluoro-2,4-pentanedione, 1,1,1,5,5,5-hexafluoro-2,4-pentanedione and 2,2-dimethyl-3,5-hexanedione; and wherein  is  R1 and R2 are independently selected from C1-C4 alkyl groups and C1-C4 alkoxy groups, R3, R4, R5 and R6 are independently selected from hydrogen, C1-C4 alkyl groups and C1-C4 alkoxy groups, and  is selected from 2,4-pentanedione, 2,2,6,6,-tetramethylheptane-3,5-dione, 1,3-propanedione, 1,3-butanedione, 3,5-heptanedione, 1,1,1-trifluoro-2,4-pentanedione, 1,1,1,5,5,5-hexafluoro-2,4-pentanedione and 2,2-dimethyl-3,5-hexanedione. Further disclosed herein is an organic electroluminescent (EL) device comprising an anode, a hole injecting layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injecting layer, and a cathode laminated in this order wherein one of the red phosphorescent compounds is used as a dopant of the light-emitting layer.

A method for forming and the structure of a vertical channel of a field effect transistor, a field effect transistor and CMOS circuitry are described incorporating a drain, body and source region on a sidewall of a vertical single crystal semiconductor structure wherein a hetero-junction is formed between the source and body of the transistor, wherein the source region and channel are independently lattice strained with respect the body region and wherein the drain region contains a carbon doped region to prevent the diffusion of dopants (i.e., B and P) into the body. The invention reduces the problem of short channel effects such as drain induced barrier lowering and the leakage current from the source to drain regions via the hetero-junction and while independently permitting lattice strain in the channel region for increased mobility via choice of the semiconductor materials. The problem of scalability of the gate length below 100 nm is overcome by the heterojunction between the source and body regions.

Disclosed herein is a red phosphorescent compound of the following Formula 1: wherein is R1 is a C1-C4 alkoxy group, R2, R3, R4 and R5 are independently selected from hydrogen, C1-C4 alkyl groups and C1-C4 alkoxy groups, and  is selected from 2,4-pentanedione, 2,2,6,6,-tetramethylheptane-3,5-dione, 1,3-propanedione, 1,3-butanedione, 3,5-heptanedione, 1,1,1-trifluoro-2,4-pentanedione, 1,1,1,5,5,5-hexafluoro-2,4-pentanedione, and 2,2-dimethyl-3,5-hexanedione. Further disclosed herein is an organic electroluminescent (EL) device comprising an anode, a hole injecting layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injecting layer, and a cathode laminated in this order wherein one of the red phosphorescent compounds is used as a dopant of the light-emitting layer.

Red phosphorescence compounds and organic electro-luminescence device using the same are disclosed. In an organic electroluminescence device including an anode, a hole injecting layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injecting layer, and a cathode serially deposited on one another, the organic electroluminescence device may use a compound as a dopant of the light emitting layer.

A solar cell that is readily manufactured using processing techniques which are less expensive than microelectronic circuit processing. In preferred embodiments, printing techniques are utilized in selectively forming masks for use in etching of silicon oxide and diffusing dopants and in forming metal contacts to diffused regions. In a preferred embodiment, p-doped regions and n-doped regions are alternately formed in a surface of the wafer in offset levels through use of masking and etching techniques. Metal contacts are made to the p-regions and n-regions by first forming a seed layer stack that comprises a first layer such as aluminum that contacts silicon and functions as an infrared reflector, second layer such titanium tungsten that acts as diffusion barrier, and a third layer functions as a plating base. A thick conductive layer such as copper is then plated over the seed layer, and the seed layer between plated lines is removed. A front surface of the wafer is preferably textured by etching or mechanical abrasion with an antireflection layer provided over the textured surface. A field layer can be provided in the textured surface with the combined effect being a very low surface recombination velocity.

A method of forming semiconductor junctions in a semiconductor material of a workpiece includes ion implanting dopant impurities in selected regions of the semiconductor material, introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and optically annealing the workpiece so as to activate dopant impurities in the semiconductor material.

An organic electroluminescent device 1 comprising, an emitting layer (50) and an electron-transporting layer (60) between a cathode (80) and an anode (20), the electron-transporting layer (60) comprising a compound represented by formula (1), the emitting layer (50) comprising a host material which is a compound with an energy gap of 2.8 eV or less represented by formula (2) and a dopant which is an indenoperylene derivative, A-B   (1) wherein A is an aromatic hydrocarbon group with three or more carbocycles and B is a substituted or unsubstituted heterocyclic group, X—(Y)n   (2) wherein X is a condensed aromatic ring group with three or more carbocycles, Y is a group selected from substituted or unsubstituted aryl, substituted or unsubstituted diarylamino, substituted or unsubstituted arylalkyl and substituted or unsubstituted alkyl groups, and n is an integer of 1 to 6, provided that Ys may be the same or different when n is 2 or more.

An organic EL material-containing solution contains an organic EL material, a solvent and a viscosity control agent. The organic EL material contains a host and a dopant.The host is a compound shown by Formula (1) below and has a solubility of 2 wt % or higher in the solvent. The solvent is an aromatic solvent, while the viscosity control agent is an alcohol type solution or an alkyl-substituted aromatic solution having 4 or more carbon atoms.

Methods for formation of epitaxial layers containing n-doped silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of the n-doped epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source, a carbon source and an n-dopant source. An epitaxial layer may have considerable tensile stress which may be created in a significant amount by a high concentration of n-dopant. A layer having n-dopant may also have substitutional carbon. Phosphorus as an n-dopant with a high concentration is provided. A substrate having an epitaxial layer with a high level of n-dopant is also disclosed.

A method for forming germanium tin layers and the resulting embodiments are described. A germanium precursor and a tin precursor are provided to a chamber, and an epitaxial layer of germanium tin is formed on the substrate. The germanium tin layer is selectively deposited on the semiconductor regions of the substrate and can include thickness regions of varying tin and dopant concentrations. The germanium tin layer can be selectively deposited by either alternating or concurrent flow of a halide gas to etch the surface of the substrate.

Methods of depositing epitaxial material using a repeated deposition and etch process. The deposition and etch processes can be repeated until a desired thickness of silicon-containing material is achieved. During the deposition process, a doped silicon film can be deposited. The doped silicon film can be selectively deposited in a trench on a substrate. The trench can have a liner comprising silicon and carbon prior to depositing the doped silicon film. The doped silicon film may also contain germanium. Germanium can promote uniform dopant distribution within the doped silicon film.

A bulk semiconductor substrate including a first semiconductor material is provided. A well trapping layer including a second semiconductor material and a dopant is formed on a top surface of the bulk semiconductor substrate. The combination of the second semiconductor material and the dopant within the well trapping layer is selected such that diffusion of the dopant is limited within the well trapping layer. A device semiconductor material layer including a third semiconductor material can be epitaxially grown on the top surface of the well trapping layer. The device semiconductor material layer, the well trapping layer, and an upper portion of the bulk semiconductor substrate are patterned to form at least one semiconductor fin. Semiconductor devices formed in each semiconductor fin can be electrically isolated from the bulk semiconductor substrate by the remaining portions of the well trapping layer.

Methods of forming p-type doped germanium-tin layers, systems for forming the p-type doped germanium-tin layers, and structures including the p-type doped germanium-tin layers are disclosed. The p-type doped germanium-tin layers include an n-type dopant, which allows relatively high levels of tin and / or p-type dopant to be included into the p-type doped germanium-tin layers.

Disclosed herein are methods of doping a patterned substrate in a reaction chamber. The methods may include forming a first conformal film layer which has a dopant source including a dopant, and driving some of the dopant into the substrate to form a conformal doping profile. In some embodiments, forming the first film layer may include introducing a dopant precursor into the reaction chamber, adsorbing the dopant precursor under conditions whereby it forms an adsorption-limited layer, and reacting the adsorbed dopant precursor to form the dopant source. Also disclosed herein are apparatuses for doping a substrate which may include a reaction chamber, a gas inlet, and a controller having machine readable code including instructions for operating the gas inlet to introduce dopant precursor into the reaction chamber so that it is adsorbed, and instructions for reacting the adsorbed dopant precursor to form a film layer containing a dopant source.

Disclosed are a semiconductor device and a manufacturing method thereof. According to the semiconductor device and the manufacturing method thereof according to exemplary embodiments of the present invention, after the dopant source layer is uniformly deposited on a channel layer of the device with the 3-demensional vertical structure by the plasma-enhanced atomic layer deposition (PEALD) method, the deposited dopant source layer is heat-treated so that the dopants are diffused into the channel layer to function as charge carriers, thereby preventing the charges in the channel layer from being reduced. According to the exemplary embodiments of the present invention, the diffusion speed and concentration of the dopant may be controlled by forming the barrier layer between the channel layer and the dopant source layer.

The present invention addresses the key challenges in FinFET fabrication, that is, the fabrications of thin, uniform fins and also reducing the source / drain series resistance. More particularly, this application relates to FinFET fabrication techniques utilizing tetrasilane to enable conformal deposition with high doping using phosphate, arsenic and boron as dopants thereby creating thin fins having uniform thickness (uniformity across devices) as well as smooth, vertical sidewalls, while simultaneously reducing the parasitic series resistance.

A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.

Methods of forming p-type doped germanium-tin layers, systems for forming the p-type doped germanium-tin layers, and structures including the p-type doped germanium-tin layers are disclosed. The p-type doped germanium-tin layers include an n-type dopant, which allows relatively high levels of tin and / or p-type dopant to be included into the p-type doped germanium-tin layers.

The invention generally teaches a method for depositing a silicon film or silicon germanium film on a substrate comprising placing the substrate within a process chamber and heating the substrate surface to a temperature in the range from about 600° C. to about 900° C. while maintaining a pressure in the range from about 0.1 Torr to about 200 Torr. A deposition gas is provided to the process chamber and includes SiH4, an optional germanium source gas, an etchant, a carrier gas and optionally at least one dopant gas. The silicon film or the silicon germanium film is selectively and epitaxially grown on the substrate. One embodiment teaches a method for depositing a silicon-containing film with an inert gas as the carrier gas. Methods may include the fabrication of electronic devices utilizing selective silicon germanium epitaxial films.

A method for forming semiconductor transistor. The method comprises providing a structure including (a) a semiconductor region, and (b) first and second dopant source regions on and in direct physical contact with the semiconductor region, wherein each region of the first and second dopant source regions comprises a dielectric material which contains dopants; causing the dopants to diffuse from the first and second dopant source regions into the semiconductor region so as to form first and second source / drain extension regions, respectively, wherein the first and second source / drain extension regions define a channel region disposed between; forming a gate dielectric region on a channel region; and forming a gate region on the gate dielectric region, wherein the gate dielectric region electrically insulates the gate region from the channel region.

An OLED includes a wide gap inert host material doped with two dopants. One of the dopants is an emissive phosphorescent material that can transport either electrons or holes. The other dopant is a charge carrying material that can transport whichever of the electrons and holes that is not transported by the phosphorescent dopant. The materials are selected so that the lowest triplet energy level of the host material and the lowest triplet energy level of the charge carrying dopant material are each at a higher energy level than the lowest triplet state energy level of the phosphorescent dopant material. The device is capable, in particular, of efficiently emitting light in the blue region of the visible spectrum.