The invention discloses an inverted mounting LED
chip based on double-faced shrinkage
pool substrate and component gradual change buffer layer, wherein the
chip comprises a
sapphire substrate distributed with 102-104 shrinkage pools at upper and lower surfaces, an AlxGa1-xN component gradual change buffer layer composed of an unit layer formed by k non-
doping AlxGa1-xN epitaxial materials, a n-type GaN epitaxial layer, an InGaN / GaN multi-
quantum well, a p-type GaN layer, a transparent ITO (
indium tin oxide) conductive film, an inverted mounting
welding electrode and a
silicon substrate from upper to lower. The LED
chip disclosed by the invention uses the shrinkage
pool structure for improving the emergent probability of LED emergent lights, and increasing the heat
radiation area and growth stress acting range of the substrate, so that the GaB epitaxial quality and the
radiation composite luminous efficiency are improved; the buffer layer of the n-type GaN epitaxial layer is manufactured by the AlxGa1-xN with gradually reduced Al component, so that the light-emitting efficiency and the internal
quantum efficiency of the LED are improved, and a relatively high light output power is obtained.