The invention belongs to the technical field of polysilicon purification, in particular to a method for removing impurities through directional solidification by adopting the technology of electron beam inducing. The method comprises the following steps of selecting, washing and drying metallurgical grade polysilicon with high aluminum content and high calcium content, placing the polysilicon in a crucible, vacuumizing the polysilicon, starting an electron gun to bombard the polysilicon at a beam flow of 400-700 mA till the polysilicon is totally dissolved to form into a molten pool, and continuously smelting the molten pool for 30-60 min; and then reducing the beam flow of the electron beam by adopting a way of logarithmic beam drop, after the beam flow of the electron beam is reduced to 100-150 mA, stopping droping the beam, the melt slowly freezes to form into an ingot, closing the beam flow to obtain a polysilicon ingot with low aluminum and low calcium contents. According to the method provided by the invention, as the evaporation effect and segregation effect of impurities in the silicon are fully utilized, the complementary advantages of two impurity removing ways of electron beam smelting evaporation and directional solidification can be realized; the aluminum and calcium impurities can be ensured to be removed after one step of smelting so as to meet the performance requirements of a solar cell; the process section is reduced, the energy consumption is reduced, and the method can be in favor of the large-scale promotion and application.