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44303 results about "Nitrogen gas" patented technology

Thin film transistor and organic light-emitting display device having the thin film transistor

Disclosed is a thin film transistor including a P-type semiconductor layer, and an organic light-emitting display device having the thin film transistor. The present invention provides a thin film transistor including a substrate, a semiconductor layer, and a gate electrode and a source / drain electrode formed on the substrate, wherein the semiconductor layer is composed of P-type ZnO:N layers through a reaction of a mono-nitrogen gas with a zinc precursor, and the ZnO:N layer includes an un-reacted impurity element at a content of 3 at % or less.
Owner:SAMSUNG MOBILE DISPLAY CO LTD

Method for Depositing Conformal Amorphous Carbon Film by Plasma-Enhanced Chemical Vapor Deposition (PECVD)

Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate.
Owner:APPLIED MATERIALS INC

Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone

A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.
Owner:APPLIED MATERIALS INC

Apparatus, system, and method for generating a gas from solid reactant pouches

An apparatus, system, and method are disclosed for generating a gas. One or more liquid permeable pouches each define a cavity that contains a solid anhydrous reactant, such as a chemical hydride. A reaction chamber made of a heat, chemical and / or pressure resistant material receives the one or more pouches from a pouch feeder that transfers the one or more pouches into the reaction chamber successively at a feed rate. One or more liquid sources inject a liquid reactant into the reaction chamber so that the liquid reactant contacts a portion of the one or more pouches. The one or more liquid sources inject the liquid reactant at an injection rate that corresponds to the feed rate. A gas outlet releases a gas, such as hydrogen, oxygen, ammonia, borazine, nitrogen, or a hydrocarbon, that is produced by a reaction between the solid reactant and the liquid reactant.
Owner:TRULITE INC

Method of cleaning a chemical vapor deposition chamber

After a processing chamber is used to deposit a refractory metal film on a substrate, the chamber is plasma-treated with a gas including either nitrogen and / or hydrogen and in-situ cleaned. By plasma-treating the chamber with a gas including nitrogen, the refractory metal film that forms on interior surfaces of the chamber during substrate processing is nitrided. The nitrided refractory metal film can be removed from the chamber during the in-situ cleaning. By plasma-treating the chamber with a gas including hydrogen, reaction by-products generated in the chamber is diluted and removed. The chamber may be plasma-treated in a gas ambient including both nitrogen and hydrogen. Also, the plasma treatment may be performed before and after the in-situ cleaning.
Owner:SAMSUNG ELECTRONICS CO LTD

Front end of line plasma mediated ashing processes and apparatus

Front end of line (FEOL) plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and / or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and / or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.
Owner:LAM RES CORP

Method of forming a layer and method of forming a capacitor of a semiconductor device having the same

In a method of forming a layer using an atomic layer deposition process, after a substrate is loaded into a chamber, a reactant is provided onto the substrate to form a preliminary layer. Atoms in the preliminary layer are partially removed from the preliminary layer using plasma formed from an inert gas such as an argon gas, a xenon gas or a krypton gas, or an inactive gas such as an oxygen gas, a nitrogen gas or a nitrous oxide gas to form a desired layer. Processes for forming the desired layer may be simplified. A highly integrated semiconductor device having improved reliability may be economically manufactured so that time and costs required for the manufacturing of the semiconductor device may be reduced.
Owner:SAMSUNG ELECTRONICS CO LTD

Minimum contact area wafer clamping with gas flow for rapid wafer cooling

Apparatuses and methods for cooling and transferring wafers from low pressure environment to high pressure environment are provided. An apparatus may include a cooling pedestal and a set of supports for holding the wafer above the cooling pedestal. The average gap between the wafer and the cooling pedestal may be no greater than about 0.010 inches. Venting gases may be used to increase the pressure inside the apparatus during the transfer. In certain embodiment, venting gases comprise nitrogen.
Owner:NOVELLUS SYSTEMS

Method for producing material of electronic device

A process for producing electronic device (for example, high-performance MOS-type semiconductor device) structure having a good electric characteristic, wherein an SiO2 film or SiON film is used as an insulating film having an extremely thin (2.5 nm or less, for example) film thickness, and poly-silicon, amorphous-silicon, or SiGe is used as an electrode. In the presence of process gas comprising oxygen and an inert gas, plasma including oxygen and the inert gas (or plasma comprising nitrogen and an inert gas, or plasma comprising nitrogen, an inert gas and hydrogen) is generated by irradiating a wafer W including Si as a main component with microwave via a plane antenna member SPA. An oxide film (or oxynitride film) is formed on the wafer surface by using the thus generated plasma, and as desired, an electrode of poly-silicon, amorphous-silicon, or SiGe is formed, to thereby form an electronic device structure.
Owner:TOKYO ELECTRON LTD

Apparatus and method for generating nitrogen oxides

A combustion analyzer apparatus and method for combustion analysing a sample, the analyzer comprising a combustion chamber (82) for receiving a sample for combustion therein to form combustion products, and a fluid supply apparatus for supplying fluid(s) into the chamber. The fluid supply apparatus (130-140) comprises a nitrogen oxides (NOx) generating apparatus (140,190,210,240) and is arranged to supply NOx into the combustion chamber. A yield of sulphur dioxide in the combustion products may thereby be improved. The NOx generating apparatus may be operated at a raised working temperature. The NOx generating apparatus may be provided by an ozonator with a supply of nitrogen and oxygen. A Venturi tube arrangement (246) may draw the generated NOx into a (carrier or oxygen) gas line to the combustion chamber. Ozone may be supplied to the combustion products to convert nitrogen monoxide therein to nitrogen dioxide. The NOx and ozone may be supplied by a single device (210,240).
Owner:THERMO ELECTRON MFG

[method for forming an oxide/ nitride/oxide stacked layer]

A method for fabricating a silicon oxide / silicon nitride / silicon oxide stacked layer structure is described. A bottom oxide layer is formed over a substrate. A surface treatment is then performed on the first silicon oxide layer to form an interface layer over the bottom oxide layer. The surface treatment is conducted in a nitrogen ambient. Thereafter, a silicon nitride layer is formed over the interface layer, followed by forming an upper silicon oxide layer over the silicon nitride layer.
Owner:MACRONIX INT CO LTD

Deposition apparatus and method of depositing thin film using the same

A deposition apparatus and a method of depositing a thin film using the same are provided. By maintaining pressure of an external chamber between a reaction space and an outer wall slightly lower than pressure of the reaction space by supplying a charge gas to an external chamber of a space between the reaction space and an outer wall, parasitic plasma can be prevented from being generated within the external chamber. When loading or unloading a substrate, a charge gas of the external chamber can be prevented from flowing backward to the reaction space, and by supplying nitrogen gas as a charge gas, even if high plasma power is supplied, parasitic plasma can be effectively prevented from being generated in the external chamber.
Owner:ASM IP HLDG BV

Film forming method and film forming device

A plasma 10 is generated within a film formation chamber 2, and mainly a nitrogen gas 11 is excited within the film formation chamber 2. Then, the excited nitrogen gas 11 is reacted with a diborane gas 13 diluted with a hydrogen gas, thereby forming a boron nitride film 15 on a substrate 4. Thus, the boron nitride film 15 excellent in mechanical and chemical resistance, high in thermal conductivity, and having a low relative dielectric constant κ can be formed speedily.
Owner:M WATANABE CO LTD

Compositions and methods for depositing silicon nitride films

Described herein are compositions, silicon nitride films and methods for forming silicon nitride films using at least on cyclodisilazane precursor. In one aspect, there is provided a method of forming a silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one cyclodisilazane comprising a hydrocarbon leaving group and two Si—H groups wherein the at least one cyclodisilazane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W / cm2.
Owner:VERSUM MATERIALS US LLC

Ultraviolet ray generator, ultraviolet ray irradiation processing apparatus, and semiconductor manufacturing system

The present invention relates to an ultraviolet ray generator 101, and the generator 101 has an ultraviolet ray lamp 1, a protective tube 2 being made of a material which is transparent with respect to ultraviolet ray and housing the ultraviolet ray lamp 1, and gas introduction port 6a introducing nitrogen gas or inert gas into the protective tube 2.
Owner:NAT INST OF ADVANCED IND SCI & TECH +1

Methods for Depositing Silicon Nitride Films

Described herein are methods for forming silicon nitride films. In one aspect, there is provided a method of forming a silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one organoaminosilane having a least one SiH3 group described herein wherein the at least one organoaminosilane reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W / cm2.
Owner:VERSUM MATERIALS US LLC

Method for operating a gas phase polymerization reactor

Disclosed herein is a method of operating a polymerization reactor for a polymerization reaction comprising modifying a recycle gas composition to increase the heat capacity of the recycle gas wherein the recycle gas composition is modified by reducing or eliminating the nitrogen concentration in the recycle gas. In an embodiment, the nitrogen concentration is reduced or eliminated by reducing or eliminating one or more nitrogen input sources to the polymerization reactor and replacing the nitrogen with an alternate inert fluid (a gas or liquid that is inert to the catalyst and reactants). The alternate inert fluid has a higher heat capacity and a higher molecular weight than nitrogen. In an embodiment, the nitrogen utilized to convey a catalyst into the polymerization reactor is replaced with an alternate inert fluid. In an embodiment, the alternate inert fluid is ethane, propane, isobutane, or combinations thereof.
Owner:CHEVRON PHILLIPS CHEMICAL CO LP

Method for depositing oxide film by peald using nitrogen

A method of depositing an oxide film on a template for patterning in semiconductor fabrication, includes: (i) providing a template having patterned structures thereon in a reaction space; and (ii) depositing an oxide film on the template by plasma-enhanced atomic layer deposition (PEALD) using nitrogen gas as a carrier gas and also as a dilution gas, thereby entirely covering with the oxide film an exposed top surface of the template and the patterned structures.
Owner:ASM IP HLDG BV

Plasma for patterning advanced gate stacks

A plasma composition and its use in a method for the dry etching of a stack of at least one material chemically too reactive towards the use of a Cl-based plasma are provided. Small amounts of nitrogen (5% up to 10%) can be added to a BCl3 comprising plasma and used in an anisotropical dry etching method whereby a passivation film is deposited onto the vertical sidewalls of stack etched for protecting the vertical sidewalls from lateral attack such that straight profiles can be obtained.
Owner:INTERUNIVERSITAIR MICRO ELECTRONICS CENT (IMEC VZW)

Minimum contact area wafer clamping with gas flow for rapid wafer cooling

Apparatuses and methods for cooling and transferring wafers from low pressure environment to high pressure environment are provided. An apparatus may include a cooling pedestal and a set of supports for holding the wafer above the cooling pedestal. The average gap between the wafer and the cooling pedestal may be no greater than about 0.010 inches. Venting gases may be used to increase the pressure inside the apparatus during the transfer. In certain embodiment, venting gases comprise nitrogen.
Owner:NOVELLUS SYSTEMS

Chamber recovery after opening barrier over copper

A chamber dry cleaning process particularly useful after a dielectric plasma etch process which exposes an underlying copper metallization. After the dielectric etch process, the production wafer is removed from the chamber and a cleaning gas is excited into a plasma to clean the chamber walls and recover the dielectric etching characteristic of the chamber. Preferably, the cleaning gas is reducing such as hydrogen gas with the addition of nitrogen gas. Alternatively, the cleaning gas may an oxidizing gas. If the wafer pedestal is vacant during the cleaning, it is not electrically biased. If a dummy wafer is placed on the pedestal during cleaning, the pedestal is biased. The cleaning process is advantageously performed every wafer cycle.
Owner:APPLIED MATERIALS INC

Well Servicing Rig and Manifold Assembly

A well servicing rig for communicating with a fluid source and an effluent reservoir (such as a flow back tank) has an apparatus for holding and dispensing coiled tubing. A manifold assembly is advantageously located on the rig for routing the pressurized fluid (such as nitrogen gas mixed with proppant) from the fluid source between the coiled tubing apparatus, the well and the effluent reservoir. The manifold assembly controls the flow of the fluid to perform fracturing operations, for reverse fluid circulation, for a common coiled tubing operation, for pressure testing, and the like. The assembly includes remotely controlled valves and pressure transducers for controlling the fluid flow, and chokes for diffusing fluid energy prior to entering the effluent reservoir. The rig, fluid source, effluent reservoir and a fluid pumper provide a novel method of servicing an underground formation (such as a coal bed) for natural gas.
Owner:FRAC SOURCE

Microstructured optical fibers and methods

Microstructured optical fiber and method of making. Glass soot is deposited and then consolidated under conditions which are effective to trap a portion of the consolidation gases in the glass to thereby produce a non-periodic array of voids which may then be used to form a void containing cladding region in an optical fiber. Preferred void producing consolidation gases include nitrogen, argon, CO2, oxygen, chlorine, CF4, CO, SO2 and mixtures thereof.
Owner:CORNING INC

Phosphor, light source and LED

InactiveUS20050189863A1Improve luminance of light lightImprove of visible light lightDischarge tube luminescnet screensLamp detailsPhosphorUltraviolet lights
A phosphor with high efficiency having an excitation band corresponding to light of the ultraviolet-visible (300 to 550 nm) wavelength region emitted from a light emitting portion which emits blue or ultraviolet light is provided. A nitride of Ca, a nitride of Al, a nitride QfSi, and an oxide of Eu are prepared, and respective raw materials are weighed so that a mol ratio of respective elements becomes Ca:Al:Si:Eu=0.985:3:1:0.015, mixed under a nitrogen atmosphere, and thereafter fired at 1500° C. in a nitrogen atmosphere to thereby produce a phosphor having a composition formula Ca0.985SiAlN3:Eu0.015.
Owner:NICHIA CORP

Microstructured optical fibers and methods

Microstructured optical fiber and method of making. Glass soot is deposited and then consolidated under conditions which are effective to trap a portion of the consolidation gases in the glass to thereby produce a non-periodic array of voids which may then be used to form a void containing cladding region in an optical fiber. Preferred void producing consolidation gases include nitrogen, argon, CO2, oxygen, chlorine, CF4, CO, SO2 and mixtures thereof.
Owner:CORNING INC

Heat and corrosion resistant cast CF8C stainless steel with improved high temperature strength and ductility

A CF8C type stainless steel alloy and articles formed therefrom containing about 18.0 weight percent to about 22.0 weight percent chromium and 11.0 weight percent to about 14.0 weight percent nickel; from about 0.05 weight percent to about 0.15 weight percent carbon; from about 2.0 weight percent to about 10.0 weight percent manganese; and from about 0.3 weight percent to about 1.5 weight percent niobium. The present alloys further include less than 0.15 weight percent sulfur which provides high temperature strength both in the matrix and at the grain boundaries without reducing ductility due to cracking along boundaries with continuous or nearly-continuous carbides. The disclosed alloys also have increased nitrogen solubility thereby enhancing strength at all temperatures because nitride precipitates or nitrogen porosity during casting are not observed. The solubility of nitrogen is dramatically enhanced by the presence of manganese, which also retains or improves the solubility of carbon thereby providing additional solid solution strengthening due to the presence of manganese and nitrogen, and combined carbon.
Owner:UT BATTELLE LLC

Preparation method of phenolic hydroxyl group containing polyimide powder

The preparation process of phenolic hydroxyl group-containing polyimide powder includes the following steps: 1. reaction of phenolic hydroxyl group-containing aromatic diamine compound or its mixture with other diamine compound and aromatic binary anhydride in the molar ratio of 1 to 1 in strong polar non-protonic organic solvent under protection of nitrogen at 0-30 deg.c for 3-12 hr to obtain transparent ropy polyhydroxy amido acid solution; and 2. adding azeotropic dewatering agent in nitrogen atmosphere and heating to 120-160 deg.c to reflux, azeotropically dewater and imidize for 5-18 hr, cooling to room temperature, washing and vacuum drying to obtain phenolic hydroxyl group-containing polyimide powder. The industrial production process has environment friendship, simple operation, low cost and easy solvent recovery.
Owner:DONGHUA UNIV

Silicon etching apparatus using XeF2

The silicon etching apparatus using XeF2 includes: a basic structure composed of a loading chamber tot loading XeF2, an expansion chamber for collecting sublimated XeF2 gas, and an etching chamber for performing an etching process; and a means for injecting nitrogen prior to the etching process to eliminate air moisture in the apparatus and thus preventing the formation of HF. The silicon etching apparatus using XeF2 further includes: an injector having a predefined shape provided in the etching chamber for uniformly injecting the XeF2 gas downward on to surface of a wafer; a feedback controller for feedback controlling the internal pressure of the loading chamber in order to prevent sublimation of the residual XeF2 in the loading chamber; and a weight scale for measuring the weight of XeF2 in the loading chamber.
Owner:TECHBANK
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