The invention is embodied in a method of
processing a
semiconductor workpiece in a
plasma reactor chamber, including supplying a
polymer and etchant precursor gas containing at least carbon and
fluorine into the chamber at a first flow rate sufficient of itself to maintain a
gas pressure in the chamber in a low
pressure range below about 20 mT, supplying a relatively non-
reactive gas into the chamber at second flow rate sufficient about one half or more of the total gas flow rate into the chamber, in combination with the first flow rate of the precursor gas, to maintain the
gas pressure in the chamber in a
high pressure range above 20 mT, and applying
plasma source power into the chamber to form a high
ion density
plasma having an
ion density in excess of 1010 ions per cubic
centimeter. In one application of the invention, the workpiece includes an
oxygen-containing
overlayer to be etched by the process and a non-
oxygen-containing underlayer to be protected from
etching, the precursor gas dissociating in the plasma into
fluorine-containing etchant species which etch the
oxygen-containing layer and carbon-containing
polymer species which accumulate on the non-oxygen-containing underlayer. Alternatively, the
high pressure range may be defined as a pressure at which the
skin depth of the inductive field exceeds {fraction (1 / 10)} of the gap between the inductive antenna and the workpiece.