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7507 results about "Yttrium" patented technology
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Yttrium is a chemical element with the symbol Y and atomic number 39. It is a silvery-metallic transition metal chemically similar to the lanthanides and has often been classified as a "rare-earth element". Yttrium is almost always found in combination with lanthanide elements in rare-earth minerals, and is never found in nature as a free element. Y is the only stable isotope, and the only isotope found in the Earth's crust.
Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
InactiveUS20050056218A1Extended service lifePromote resultsAfter-treatment apparatusElectric discharge tubesVolumetric Mass DensityYttrium
Disclosed herein is a gas distribution plate for use in a gas distribution assembly for a processing chamber, where the gas distribution plate is fabricated from a solid yttrium oxide-comprising substrate, which may also include aluminum oxide. The gas distribution plate includes a plurality of through-holes, which are typically crescent-shaped. Through-holes which have been formed in the solid yttrium oxide-comprising substrate by ultrasonic drilling perform particularly well. The solid yttrium oxide-comprising substrate-typically comprises at least 99.9% yttrium oxide, and has a density of at least 4.92 g / cm3, a water absorbency of about 0.02% or less, and an average grain size within the range of about 10 μm to about 25 μm. Also disclosed herein are methods for fabricating and cleaning the yttrium oxide-comprising gas distribution plate.
Owner:APPLIED MATERIALS INC
Component for semicondutor processing apparatus and manufacturing method thereof
InactiveUS20090194233A1Increased durabilityLiquid surface applicatorsSemiconductor/solid-state device manufacturingTectorial membranePorosity
A component (10) for a semiconductor processing apparatus includes a matrix (10a) defining a shape of the component, and a protection film (10c) covering a predetermined surface of the matrix. The protection film (10c) consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium. The protection film (10c) has a porosity of less than 1% and a thickness of 1 nm to 10 μm.
Owner:TOKYO ELECTRON LTD
Light source having an LED and a luminescence conversion body and method for producing the luminescence conversion body
ActiveUS20040145308A1Efficient luminescence conversionDischarge tube luminescnet screensLamp detailsDopantSecondary radiation
The invention relates to a light source (1), having at least one LED (2) for emitting a primary radiation (4) and at least one luminescence conversion body (3) having at least one luminescent material for converting the primary radiation (4) into a secondary radiation (5). The luminescence conversion body is a polycrystalline ceramic body. The LED is based on GaInN and emits blue primary radiation. The ceramic body comprises for example a luminescent material based on a cerium-doped yttrium aluminum garnet. This luminescent material emits yellow secondary radiation. Blue primary radiation and yellow secondary radiation penetrate through the luminescence conversion body and are perceived as white light by the observer. In order to produce the luminescence conversion body, provision is made of a polycrystalline ceramic body which is united with a solution of a dopant. By means of a thermal treatment, the dopant (activator) diffuses into the ceramic body, the luminescent material being formed.
Owner:OSRAM OPTO SEMICONDUCTORS GMBH
Phosphors containing boron and metals of Group IIIA and IIIB
Owner:GENERAL ELECTRIC CO
Gate oxides
InactiveUS6844203B2Improve surface roughnessSmooth surface roughnessSemiconductor/solid-state device manufacturingSemiconductor devicesEquivalent oxide thicknessGadolinium
A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Also shown is a gate oxide with a conduction band offset of 2 eV or greater. Gate oxides formed from elements such as yttrium and gadolinium are thermodynamically stable such that the gate oxides formed will have minimal reactions with a silicon substrate or other structures during any later high temperature processing stages. The process shown is performed at lower temperatures than the prior art, which further inhibits reactions with the silicon substrate or other structures. Using a thermal evaporation technique to deposit the layer to be oxidized, the underlying substrate surface smoothness is preserved, thus providing improved and more consistent electrical properties in the resulting gate oxide.
Owner:HEWLETT PACKARD CO +1
Corrosion control for chamber components
Owner:APPLIED MATERIALS INC
Ceramic material resistant to halogen plasma and member utilizing the same
InactiveUS6916559B2Improve the immunityRecord information storageLight beam reproducingPorosityHalogen
A member used within a plasma processing apparatus and exposed to a plasma of a halogen gas such as BCl3 or Cl2 is formed from a sintered body of metals of Group IIIa of Periodic Table such as Y, La, Ce, Nd and Dy, and Al and / or Si, for example, 3Y2O3.5Al2O3, 2Y2O3.Al2O3, Y2O3.Al2O3 or disilicate or monosilicate, and in particular, in this sintered body, the content of impurity metals of Group IIa of Periodic Table contained in the sintered body is controlled to be 0.15 wt % or more in total. Specifically, for this member, an yttrium-aluminum-garnet sintered body having a porosity of 3% or less and also having a surface roughness of 1 μm or less in center line average roughness Ra is utilized.
Owner:KYOCERA CORP
Corrosion control for chamber components
ActiveUS20170152968A1Protection cleanSpindle sealingsElectric discharge tubesParyleneDiamond-like carbon
Implementations described herein protect a chamber components from corrosive cleaning gases used at high temperatures. In one embodiment, a chamber component includes at least a bellows that includes a top mounting flange coupled to a bottom mounting flange by a tubular accordion structure. A coating is disposed on an exterior surface of at least the tubular accordion structure. The coating includes of at least one of polytetrafluoroethylene, parylene C, parylene D, diamond-like carbon (DLC), yttria stabilized zirconia, nickel, alumina, or aluminum silicon magnesium yttrium oxygen compound. In one embodiment, the chamber component is a valve having an internal bellows.
Owner:APPLIED MATERIALS INC
Method of coating semiconductor processing apparatus with protective yttrium-containing coatings
InactiveUS20080213496A1Improve plasma resistanceTailored mechanical propertiesMolten spray coatingVacuum evaporation coatingSolid solutionYttrium
Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas. The specialty ceramic materials contain at least one yttrium oxide-comprising solid solution. Some embodiments of the specialty ceramic materials have been modified to provide a resistivity which reduces the possibility of arcing within a semiconductor processing chamber.
Owner:APPLIED MATERIALS INC
Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas
ActiveUS20080264565A1Improve plasma resistanceImprove corrosion resistanceElectric discharge tubesSemiconductor/solid-state device manufacturingYTTERBIUM OXIDEErosion rate
A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing. The ceramic article includes ceramic which is multi-phased, typically including two phase to three phases. The ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 mole %.
Owner:APPLIED MATERIALS INC
Crystalline or amorphous medium-K gate oxides, Y2O3 and Gd2O3
InactiveUS20050032292A1Semiconductor/solid-state device manufacturingSemiconductor devicesEquivalent oxide thicknessGadolinium
A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Also shown is a gate oxide with a conduction band offset of 2 eV or greater. Gate oxides formed from elements such as yttrium and gadolinium are thermodynamically stable such that the gate oxides formed will have minimal reactions with a silicon substrate or other structures during any later high temperature processing stages. The process shown is performed at lower temperatures than the prior art, which further inhibits reactions with the silicon substrate or other structures. Using a thermal evaporation technique to deposit the layer to be oxidized, the underlying substrate surface smoothness is preserved, thus providing improved and more consistent electrical properties in the resulting gate oxide.
Owner:MICRON TECH INC
Clean, dense yttrium oxide coating protecting semiconductor processing apparatus
ActiveUS20050037193A1Extended service lifeExcellent plasma corrosion-resistanceLiquid surface applicatorsMolten spray coatingPlasma coatingChemical vapor deposition
Disclosed herein is a method for applying plasma-resistant coatings for use in semiconductor processing apparatus. The coatings are applied over a substrate which typically comprises an aluminum alloy of the 2000 series or the 5000 through 7000 series. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al2O3. The coatings are typically applied to a surface of an aluminum alloy substrate or an anodized aluminum alloy substrate using a technique selected from the group consisting of thermal / flame spraying, plasma spraying, sputtering, and chemical vapor deposition (CVD). To provide the desired corrosion resistance, it is necessary to place the coating in compression. This is accomplished by controlling deposition conditions during application of the coating.
Owner:APPLIED MATERIALS INC
Substrate Processing System and Ceramic Coating Method Therefor
InactiveUS20160307740A1Reduce failureElectric discharge tubesSemiconductor/solid-state device manufacturingMetallurgyCeramic coating
Owner:SAMSUNG ELECTRONICS CO LTD
Magnetoresistive structure having a novel specular and barrier layer combination
InactiveUS7684160B1Magnetic-field-controlled resistorsConductive/insulating/magnetic material on magnetic film applicationYttriumTitanium oxide
A method and system for providing a magnetoresistive structure is disclosed. The magnetoresistive structure includes a pinned layer, a nonmagnetic spacer layer, a free layer, a specular layer, a barrier layer, and a capping layer. The spacer layer resides between the pinned layer and the free layer. The free layer is electrically conductive and resides between the specular layer and the nonmagnetic spacer layer. The specular layer is adjacent to the free layer and includes at least one of titanium oxide, yttrium oxide, hafnium oxide, magnesium oxide, aluminum oxide, nickel oxide, iron oxide, zirconium oxide, niobium oxide, and tantalum oxide. The barrier layer resides between the specular layer and the capping layer. The barrier layer is nonmagnetic and includes a first material. The capping layer includes a second material different from the first material.
Owner:WESTERN DIGITAL TECH INC
Chemical conversion of yttria into yttrium fluoride and yttrium oxyfluoride to develop pre-seasoned corossion resistive coating for plasma components
Embodiments of the disclosure provide a chamber component for use in a plasma processing chamber apparatus. The chamber component may include a coating layer that provides a fluorine-rich surface. In one embodiment, a chamber component, for use in a plasma processing apparatus, includes a body having an outer layer comprising yttria having a coating layer formed thereon, wherein the coating layer comprises a yttrium fluoride containing material.
Owner:APPLIED MATERIALS INC
Polymer nanocomposite implants with enhanced transparency and mechanical properties for administration within humans or animals
Polymer nanocomposite implants with nanofillers and additives are described. The nanofillers described can be any composition with the preferred composition being those composing barium, bismuth, cerium, dysprosium, europium, gadolinium, hafnium, indium, lanthanum, neodymium, niobium, praseodymium, strontium, tantalum, tin, tungsten, ytterbium, yttrium, zinc, and zirconium. The additives can be of any composition with the preferred form being inorganic nanopowders comprising aluminum, calcium, gallium, iron, lithium, magnesium, silicon, sodium, strontium, titanium. Such nanocomposites are particularly useful as materials for biological use in applications such as drug delivery, biomed devices, bone or dental implants.
Owner:PPG IND OHIO INC
Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas
ActiveUS7696117B2Reduce erosion rateImprove mechanical propertiesElectric discharge tubesSemiconductor/solid-state device manufacturingErosion rateYttrium
Owner:APPLIED MATERIALS INC
Iron nitride magnetic powder and magnetic recording medium comprising the same
InactiveUS20100035086A1Magnetic interactionIncreasing magnetic interactionRecord information storageInorganic material magnetismIron nitrideYttrium
A spherical or ellipsoidal iron nitride magnetic powder having a core comprising iron nitride including a Fe16N2 phase as a primary phase and an outer layer containing yttrium (Y) and aluminum (Al), in which an average particle size r of the iron nitride magnetic powder is 20 nm or less, an average diameter d of the core is 4 to 10 nm, and a ratio of r to d (r / d) is 2 to 3, and average content of yttrium and aluminum in the outer layer are from 0.9 to 5 atomic % and from 30 to 50 atomic %, respectively, each based on the total number of iron atoms in the iron nitride magnetic powder, and standard deviations of the contents of yttrium and aluminum are 0.6 atomic % or less and 17 atomic % or less, respectively.
Owner:HITACHT MAXELL LTD
Endoprosthesis comprising a magnesium alloy
InactiveUS20060052863A1Improve mechanical stabilityLong degradation timeStentsSurgeryMischmetalInsertion stent
An endoprosthesis, in particular an intraluminal endoprosthesis such as a stent, comprises a carrier structure, which includes at least one component comprising a magnesium alloy of the following composition: Magnesium: between about 60.0 and about 88.0% by weight Rare earth metals: between about 2.0 and about 30.0% by weight Yttrium: between about 2.0% and about 20.0% by weight Zirconium: between about 0.5% and about 5.0% by weight Balance: between 0 and about 10.0% by weight wherein the alloy components add up to 100% by weight.
Owner:BIOTRONIK AG
Method of reducing the erosion rate of semiconductor processing apparatus exposed to halogen-containing plasmas
InactiveUS20080264564A1Improve plasma resistanceImprove corrosion resistanceElectric discharge tubesSemiconductor/solid-state device manufacturingErosion rateYttrium
A ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.
Owner:APPLIED MATERIALS INC
High temperature aluminum alloys
High temperature aluminum alloys that can be used at temperatures from about −420° F. (−251° C.) up to about 650° F. (343° C.) are described herein. These alloys comprise aluminum; scandium; at least one of nickel, iron, chromium, manganese and cobalt; and at least one of zirconium, gadolinium, hafnium, yttrium, niobium and vanadiuim. These alloys comprise an aluminum solid solution matrix and a mixture of various dispersoids. These alloys are substantially free of magnesium.
Owner:RTX CORP
Endoprosthesis comprising a magnesium alloy
An endoprosthesis, in particular an intraluminal endoprosthesis such as a stent, comprises a carrier structure, which includes at least one component comprising a magnesium alloy of the following composition: Rare earth metals: between about 2.0 and about 5.0% by weight, with neodymium between about 1.5 and about 3.0% by weight Yttrium: between about 3.5% and about 4.5% by weight Zirconium: between about 0.3% and about 1.0% by weight Balance: between 0 and about 0.5% by weight wherein magnesium occupies the proportion by weight that remains to 100% by weight in the alloy.
Owner:BIOTRONIK VI PATENT
Illumination apparatus having adjustable color temperature and method for adjusting the color temperature
InactiveUS20060164005A1Discharge tube luminescnet screensPoint-like light sourceYttriumColor temperature
An illumination apparatus having adjustable color temperature and a method for adjusting the color temperature. The apparatus and the method can adjust the color temperature for different purposes. The illumination apparatus comprises: a blue-light source; a transparent filter lens set on the top of the blue-light source; a fluorescence layer of cerium-doped yttrium aluminum garnet (YAG) phosphor is spread onto the transparent filter lens. Replacing the yttrium and the aluminum in the cerium-doped yttrium aluminum garnet phosphor with gadolinium (Gd) and gallium (Ga) respectively can produce yellow lights of different wavelengths. Different yellow lights can then be mixed with the blue light to produce white lights of different color temperature.
Owner:SUN CHUAN SHENG
Method of depositing rare earth oxide thin films
InactiveUS6858546B2Increase probabilityIncrease ratingsPolycrystalline material growthSemiconductor/solid-state device manufacturingDeposition temperatureGadolinium
The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds of rare earth metals, especially those of yttrium, lanthanum and gadolinium. Suitable deposition temperatures for yttrium oxide are between 200 and 400° C. when the deposition pressure is between 1 and 50 mbar. Most suitable deposition temperatures for lanthanum oxide are between 160 and 165° C. when the deposition pressure is between 1 and 50 mbar.
Owner:ASM INTERNATIONAL
Surface acoustic wave device with KNb03 piezoelectric thin film, frequency filter, oscillator, electronic circuit, and electronic apparatus
InactiveUS6720846B2Polycrystalline material growthPiezoelectric/electrostriction/magnetostriction machinesTectorial membraneFrequency filtering
Owner:SEIKO EPSON CORP
Magnetic recording medium and process for producing the same
InactiveUS20070231606A1Improve the overall coefficientHead contaminationMaterials with cobaltRecord information storageMetal powderCobalt
A magnetic recording medium comprising a substrate and a magnetic layer containing ferromagnetic metal powder and a binder, wherein the ferromagnetic metal powder contains iron, cobalt and form 2 to 20 atom % of yttrium based on a total of iron and cobalt contained in the ferromagnetic metal powder and has an average length of 50 nm or smaller, and the magnetic recording medium has a test value of at least 100 passes in a magnetoresistive head resistance reduction test performed as defined herein.
Owner:FUJIFILM CORP
Process for welding
InactiveUS7170032B2Long electrode lifeEvacuating shieldingWelding/cutting media/materialsElastomerShielding gas
A welding process for non-stainless steel workpieces using GTAW equipment and hydrogen containing shield gas on a first root pass is improved by using a shield gas delivery system comprising hoses or conduits made of elastomeric material having a moisture permeability coefficient of less that 275, preferably less than 100, and using a tungsten electrode composition comprising at least tungsten and lanthanum oxide, and preferably tungsten, lanthanum oxide, yttrium oxide and zirconium oxide. Preventing moisture permeation through the elastomeric hoses delivering hydrogen containing shield gas eliminates expulsion of fused weld metal during second pass filler welding over the root pass weld. Electrode life is enhanced using the tungsten compounds.
Owner:JV IND CO LLC
Process for welding
InactiveUS20050109735A1Long electrode lifeEvacuating shieldingWelding/cutting media/materialsElastomerShielding gas
A welding process for non-stainless steel workpieces using GTAW equipment and hydrogen containing shield gas on a first root pass is improved by using a shield gas delivery system comprising hoses or conduits made of elastomeric material having a moisture permeability coefficient of less that 275, preferably less than 100, and using a tungsten electrode composition comprising at least tungsten and lanthanum oxide, and preferably tungsten, lanthanum oxide, yttrium oxide and zirconium oxide. Preventing moisture permeation through the elastomeric hoses delivering hydrogen containing shield gas eliminates expulsion of fused weld metal during second pass filler welding over the root pass weld. Electrode life is enhanced using the tungsten compounds.
Owner:JV IND CO LLC
Nitrogen oxide storage material and nitrogen oxide storing catalyst prepared therefrom
InactiveUS6350421B1Determine efficiencyNitrogen compoundsExhaust apparatusAlkaline earth metalCuprate
A nitrogen oxide storage material is disclosed which contains at least one storage component for nitrogen oxides in the form of an oxide, mixed oxide, carbonate or hydroxide of the alkaline earth metals magnesium, calcium, strontium and barium and the alkali metals potassium and caesium on a high surface area support material. The support material can be doped cerium oxide, cerium / zirconium mixed oxide, calcium titanate, strontium titanate, barium titanate, barium stannate, barium zirconate, magnesium oxide, lanthanum oxide, praseodymium oxide, samarium oxide, neodymium oxide, yttrium oxide, zirconium silicate, yttrium barium cuprate, lead titanate, tin titanate, bismuth titanate, lanthanum cobaltate, lanthanum manganate and barium cuprate or mixtures thereof.
Owner:DMC2 DEGUSSA METALS +1
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