104results about How to "Improve plasma resistance" patented technology

Specialty ceramic materials which resist corrosion / erosion under semiconductor processing conditions which employ a corrosive / erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential.

Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas. The specialty ceramic materials contain at least one yttrium oxide-comprising solid solution. Some embodiments of the specialty ceramic materials have been modified to provide a resistivity which reduces the possibility of arcing within a semiconductor processing chamber.

A resist resin comprising a copolymer in which a (meth)acrylic structure having a side chain group decomposable with an acid and a polyorganosilsesquioxane structure represented by formula (1) are present in one molecule or a mixture of polymers in which these structures are each present in different molecules as well as a method of forming a pattern using the resist resin:wherein a reference character or numeral represents the same meaning as recited in the specification.The resist resin of the present invention has high sensitivity to a radiation having a short wavelength of 220 nm or less and is capable of forming a fine pattern of 0.15 mum or less.

A gas diffusion plate has an alumina or an aluminum base material provided with one or more through holes and an yttria body shrink-fitted to one of the through holes and provided with one or more gas discharge holes.

An anodized aluminum alloy material is formed of an aluminum alloy having a Mg content between 0.1 and 2.0% by mass, a Si content between 0.1 and 2.0% by mass, a Mn content between 0.1 and 2.0% by mass, and an Fe, a Cr and a Cu content of 0.03% by mass or below and containing Al and unavoidable impurities as other components, and is coated with an anodic oxide film. Parts of the anodic oxide film at different positions with respect to thickness of the anodic oxide film have different hardnesses, respectively, and the difference in Vickers hardness between a part having the highest hardness and a part having the lowest hardness is Hv 5 or above.

A method of fabricating doped quartz component is provided herein. In one embodiment, the doped quartz component is a yttrium doped quartz ring configured to support a substrate. In another embodiment, the doped quartz component is a yttrium and aluminum doped cover ring. In yet another embodiment, the doped quartz component is a yttrium, aluminum and nitrogen containing cover ring.

In quartz glass parts and ceramic parts that are used in film-deposition devices and pre-cleaning devices in the production of semiconductors, etc., there are problems such as peeling off of the parts themselves during the use, peeling off of film-like substances adhered to the part surfaces, contamination of the products and short life time of the parts caused by corrosion of the part surfaces by plasma, and reduction in the productivity by frequent exchange of the parts. In quartz glass parts and ceramic parts that are used in film-deposition devices and pre-cleaning devices in the production of semiconductors, etc., with respect to parts, the surface of which is constituted of a ceramic thermal sprayed coating, ones having the ceramic thermal sprayed coating having a surface roughness Ra of from 5 to 20 mum are high in adherence of a film-like adherence, ones having the ceramic thermal sprayed coating having a surface roughness Ra of from 1 to 5 mum are high in plasma resistance, and ones in which grooves having a large anchor effect to the thermal sprayed coating is formed on a substrate on which the ceramic thermal sprayed coating is formed are free from peeling off of the ceramic thermal sprayed coating from the substrate and are high in durability.

In quartz glass parts and ceramic parts that are used in film-deposition devices and pre-cleaning devices in the production of semiconductors, etc., there are problems such as peeling off of the parts themselves during the use, peeling off of film-like substances adhered to the part surfaces, contamination of the products and short life time of the parts caused by corrosion of the part surfaces by plasma, and reduction in the productivity by frequent exchange of the parts. In quartz glass parts and ceramic parts that are used in film-deposition devices and pre-cleaning devices in the production of semiconductors, etc., with respect to parts, the surface of which is constituted of a ceramic thermal sprayed coating, ones having the ceramic thermal sprayed coating having a surface roughness Ra of from 5 to 20 μm are high in adherence of a film-like adherence, ones having the ceramic thermal sprayed coating having a surface roughness Ra of from 1 to 5 μm are high in plasma resistance, and ones in which grooves having a large anchor effect to the thermal sprayed coating is formed on a substrate on which the ceramic thermal sprayed coating is formed are free from peeling off of the ceramic thermal sprayed coating from the substrate and are high in durability.

There is provided a plasma etching device for generating plasma as a processing gas between an upper electrode (34) and a lower electrode (16) and subjecting a wafer (W) to plasma etching. The upper electrode (34) includes a variable DC power source (50) for applying DC voltage so that the absolute value of the self bias voltage Vdc on the surface of the upper electrode (34) becomes large enough to obtain an appropriate sputter effect to the surface and the thickness of the plasma sheath on the upper electrode (34) becomes thick enough to form a desired miniaturization plasma.

A bulk, sintered solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The bulk, sintered solid solution-comprising article is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

The present invention provides: a first sealing material for semiconductor device which sealing material is excellent in plasma resistance and inexpensive; and a second sealing material for semiconductor device and a method of manufacturing this sealing material wherein the sealing material has a good surface smoothness and a good dimensional precision. The first sealing material contains a fluororubber as a rubber component wherein the fluororubber inevitably contains a cured product of a fluorine-based elastic copolymer of a specific composition. The second sealing material is obtained by crosslinking, with ionizing radiation, a fluororubber preform containing a fluororubber component (a) (comprising a specific fluorine-based elastic copolymer) and a non-elastic fluororesin component (b) (comprising a vinylidene fluoride (co)polymer) in a specific ratio.

A solid solution-comprising ceramic article useful in semiconductor processing, which article may be in the form of a solid, bulk ceramic, or may be in the form of a substrate having a ceramic coating of the same composition as the bulk ceramic material on at least one outer surface. The ceramic article is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The ceramic-comprising article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 91 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 9 mole %.

There is provided a plasma etching device for generating plasma as a processing gas between an upper electrode (34) and a lower electrode (16) and subjecting a wafer (W) to plasma etching. The upper electrode (34) includes a variable DC power source (50) for applying DC voltage so that the absolute value of the self bias voltage Vdc on the surface of the upper electrode (34) becomes large enough to obtain an appropriate sputter effect to the surface and the thickness of the plasma sheath on the upper electrode (34) becomes thick enough to form a desired miniaturization plasma.

An electrostatic chuck of the invention comprising; a first insulating member whose upper surface serves as a mounting surface on which a plate specimen is mounted, a second insulating member which is positioned facing a lower surface side of the first insulating member, and an internal electrode located between the first insulating member and the second insulating member, wherein the first insulating member is a composite ceramic having as its main constituents 1 wt % to 4 wt % of silicon carbide, and aluminum oxide, with a volume resistivity value in a temperature range of −200° C. to 200° C., of 1×1014 Ωcm to 1×1016 Ωcm.

The present invention provides a rubber / resin composite seal material comprising: a base material comprising a rubbery elastomer; and a fluororesin film bonded to the base material with an adhesive.

A method for manufacturing a semiconductor device including: a process of applying a sealing composition for a semiconductor to a semiconductor substrate, to form a sealing layer for a semiconductor on at least the bottom face and the side face of a recess portion of an interlayer insulating layer, the sealing composition including a polymer having a cationic functional group and a weight average molecular weight of from 2,000 to 1,000,000, each of the content of sodium and the content of potassium in the sealing composition being 10 ppb by mass or less on an elemental basis; and a process of subjecting a surface of the semiconductor substrate at a side at which the sealing layer has been formed to heat treatment of from 200° C. to 425° C., to remove at least a part of the sealing layer.

There is provided a fluorine-containing elastomer molded article which is obtained by irradiating the fluorine-containing elastomer molded article with a plasma and has a center line average roughness of not less than 0.65 mum or a fluorine-containing elastomer molded article which is obtained by applying a resin coating layer on a fluorine-containing elastomer substrate, has a small peeling strength and a small etching rate at the irradiation of plasma and is excellent in detachability and whiteness. There is provided particularly a molded article suitable as various sealing materials for semiconductor production apparatuses.

The object of the present invention is to provide an electrostatic chuck in which the surface can be kept smooth after being exposed to plasma, so as to protect a material to be clamped such as a silicon wafer from being contaminated with particles, and which is excellent in clamping and releasing a material to be clamped. According to the present invention, there is provided an electrostatic chuck comprising a dielectric material in which alumina is 99.4 wt % or more, titanium oxide is more than 0.2 wt % and equal to or less than 0.6 wt %, whose average particle diameter is 2 μm or less, and whose volume resistivity is 108-1011 Ωcm in room temperature, wherein the electrostatic chuck is used in a low temperature of 100° C. or less.

The present invention provides a focus ring having favorable plasma resistance. In addition, the present invention provides a method for producing a focus ring which enables the easy production of focus rings having favorable plasma resistance. The focus ring of the present invention is a focus ring made of a sintered body of silicon carbide, in which the sintered body includes a plurality of first crystal grains having an α-SiC-type crystal structure and a plurality of second crystal grains having a β-SiC-type crystal structure, a content of the first crystal grains is 70% by volume or more of a total of the first crystal grains and the second crystal grains, and a volume-average crystallite diameter of the first crystal grains is 10 μm or less.

The present invention provides: a first sealing material for semiconductor device which sealing material is excellent in plasma resistance and inexpensive; and a second sealing material for semiconductor device and a method of manufacturing this sealing material wherein the sealing material has a good surface smoothness and a good dimensional precision. The first sealing material contains a fluororubber as a rubber component wherein the fluororubber inevitably contains a cured product of a fluorine-based elastic copolymer of a specific composition. The second sealing material is obtained by crosslinking, with ionizing radiation, a fluororubber preform containing a fluororubber component (a) (comprising a specific fluorine-based elastic copolymer) and a non-elastic fluororesin component (b) (comprising a vinylidene fluoride (co)polymer) in a specific ratio.

Provided herein is a fluorine-containing elastomer composition having a first curable perfluoropolymer comprising tetrafluoroethylene, at least one perfluoroalkylvinyl ether and at least one cure site monomer having a functional group to permit crosslinking of the perfluoropolymer; and barium titanate.

This wiring layer structure includes: an underlying substrate of a semiconductor substrate or a glass substrate; an oxygen-containing Cu layer or an oxygen-containing Cu alloy layer which is formed on the underlying substrate; an oxide layer containing at least one of Al, Zr, and Ti which is formed on the oxygen-containing Cu layer or the oxygen-containing Cu alloy layer; and a Cu alloy layer containing at least one of Al, Zr, and Ti which is formed on the oxide layer.

A rubber composition includes (a) a cross linkable fluoro elastomer, (b) a reactive fluorine-containing compound (excluding the cross linkable fluoro elastomer (a)) having a divalent perfluoropolyether structure or divalent perfluoroalkylene structure and containing, in the terminal or a side chain thereof, two or more of alkenyl groups capable of conducting an addition reaction at least with a hydroxyl group in the following organosilicon compound (c), and (c) a reactive organosilicon compound having two or more of hydroxyl groups in the molecule thereof and being capable of conducting an addition reaction with an alkenyl group in the above compound (b), in such amounts wherein the total amount of (b) and (c) is 1 to 10 parts by weight relative to 100 parts by weight of said rubber (a), and further includes a vulcanizing agent and optionally a crosslinking agent; and a sealing agent for a plasma treatment device, which is produced by subjecting said composition to a primary vulcanization and forming, and then subjecting unreached components in the resultant formed article to a secondary vulcanization in a vacuum oven, to thereby reduce the amount of a gas which is an unreacted component and may be discharged.