102results about How to "Improve plasma resistance" patented technology

A resist resin comprising a copolymer in which a (meth)acrylic structure having a side chain group decomposable with an acid and a polyorganosilsesquioxane structure represented by formula (1) are present in one molecule or a mixture of polymers in which these structures are each present in different molecules as well as a method of forming a pattern using the resist resin:wherein a reference character or numeral represents the same meaning as recited in the specification.The resist resin of the present invention has high sensitivity to a radiation having a short wavelength of 220 nm or less and is capable of forming a fine pattern of 0.15 mum or less.

In quartz glass parts and ceramic parts that are used in film-deposition devices and pre-cleaning devices in the production of semiconductors, etc., there are problems such as peeling off of the parts themselves during the use, peeling off of film-like substances adhered to the part surfaces, contamination of the products and short life time of the parts caused by corrosion of the part surfaces by plasma, and reduction in the productivity by frequent exchange of the parts. In quartz glass parts and ceramic parts that are used in film-deposition devices and pre-cleaning devices in the production of semiconductors, etc., with respect to parts, the surface of which is constituted of a ceramic thermal sprayed coating, ones having the ceramic thermal sprayed coating having a surface roughness Ra of from 5 to 20 mum are high in adherence of a film-like adherence, ones having the ceramic thermal sprayed coating having a surface roughness Ra of from 1 to 5 mum are high in plasma resistance, and ones in which grooves having a large anchor effect to the thermal sprayed coating is formed on a substrate on which the ceramic thermal sprayed coating is formed are free from peeling off of the ceramic thermal sprayed coating from the substrate and are high in durability.

There is provided a plasma etching device for generating plasma as a processing gas between an upper electrode (34) and a lower electrode (16) and subjecting a wafer (W) to plasma etching. The upper electrode (34) includes a variable DC power source (50) for applying DC voltage so that the absolute value of the self bias voltage Vdc on the surface of the upper electrode (34) becomes large enough to obtain an appropriate sputter effect to the surface and the thickness of the plasma sheath on the upper electrode (34) becomes thick enough to form a desired miniaturization plasma.

A solid solution-comprising ceramic article useful in semiconductor processing, which article may be in the form of a solid, bulk ceramic, or may be in the form of a substrate having a ceramic coating of the same composition as the bulk ceramic material on at least one outer surface. The ceramic article is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The ceramic-comprising article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 91 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 9 mole %.

There is provided a plasma etching device for generating plasma as a processing gas between an upper electrode (34) and a lower electrode (16) and subjecting a wafer (W) to plasma etching. The upper electrode (34) includes a variable DC power source (50) for applying DC voltage so that the absolute value of the self bias voltage Vdc on the surface of the upper electrode (34) becomes large enough to obtain an appropriate sputter effect to the surface and the thickness of the plasma sheath on the upper electrode (34) becomes thick enough to form a desired miniaturization plasma.

An electrostatic chuck of the invention comprising; a first insulating member whose upper surface serves as a mounting surface on which a plate specimen is mounted, a second insulating member which is positioned facing a lower surface side of the first insulating member, and an internal electrode located between the first insulating member and the second insulating member, wherein the first insulating member is a composite ceramic having as its main constituents 1 wt % to 4 wt % of silicon carbide, and aluminum oxide, with a volume resistivity value in a temperature range of −200° C. to 200° C., of 1×10¹⁴ Ωcm to 1×10¹⁶ Ωcm.

The object of the present invention is to provide an electrostatic chuck in which the surface can be kept smooth after being exposed to plasma, so as to protect a material to be clamped such as a silicon wafer from being contaminated with particles, and which is excellent in clamping and releasing a material to be clamped. According to the present invention, there is provided an electrostatic chuck comprising a dielectric material in which alumina is 99.4 wt % or more, titanium oxide is more than 0.2 wt % and equal to or less than 0.6 wt %, whose average particle diameter is 2 μm or less, and whose volume resistivity is 10⁸-10¹¹ Ωcm in room temperature, wherein the electrostatic chuck is used in a low temperature of 100° C. or less.

The present invention provides a focus ring having favorable plasma resistance. In addition, the present invention provides a method for producing a focus ring which enables the easy production of focus rings having favorable plasma resistance. The focus ring of the present invention is a focus ring made of a sintered body of silicon carbide, in which the sintered body includes a plurality of first crystal grains having an α-SiC-type crystal structure and a plurality of second crystal grains having a β-SiC-type crystal structure, a content of the first crystal grains is 70% by volume or more of a total of the first crystal grains and the second crystal grains, and a volume-average crystallite diameter of the first crystal grains is 10 μm or less.

The present invention provides: a first sealing material for semiconductor device which sealing material is excellent in plasma resistance and inexpensive; and a second sealing material for semiconductor device and a method of manufacturing this sealing material wherein the sealing material has a good surface smoothness and a good dimensional precision. The first sealing material contains a fluororubber as a rubber component wherein the fluororubber inevitably contains a cured product of a fluorine-based elastic copolymer of a specific composition. The second sealing material is obtained by crosslinking, with ionizing radiation, a fluororubber preform containing a fluororubber component (a) (comprising a specific fluorine-based elastic copolymer) and a non-elastic fluororesin component (b) (comprising a vinylidene fluoride (co)polymer) in a specific ratio.

Provided herein is a fluorine-containing elastomer composition having a first curable perfluoropolymer comprising tetrafluoroethylene, at least one perfluoroalkylvinyl ether and at least one cure site monomer having a functional group to permit crosslinking of the perfluoropolymer; and barium titanate.

This wiring layer structure includes: an underlying substrate of a semiconductor substrate or a glass substrate; an oxygen-containing Cu layer or an oxygen-containing Cu alloy layer which is formed on the underlying substrate; an oxide layer containing at least one of Al, Zr, and Ti which is formed on the oxygen-containing Cu layer or the oxygen-containing Cu alloy layer; and a Cu alloy layer containing at least one of Al, Zr, and Ti which is formed on the oxide layer.