6082results about How to "Reduce rate" patented technology

A method and device for controlling the compression of tissue include clamping tissue between a first clamping member and a second clamping member by driving at least one of the clamping members with an electric motor toward a predetermined tissue gap between the clamping members and, during the clamping, monitoring a parameter of the electric motor indicative of a clamping force exerted to the tissue by the clamping members. The method and device include, during the clamping, controlling the electric motor, based on the monitored parameter, to limit the clamping force to a predetermined maximum limit.

Systems and methods for delivering digital content to a mobile device from a digital content provider are disclosed. Digital content is selected using a selection interface on the mobile device. The selected content is then transferred to a computing device by the digital content provider and subsequently transferred to the mobile device by the computing device. In some embodiments, the digital content is reformatted before being transferred to the mobile device. The digital content may be streamed from the computer system to the mobile device. A service provider of a network through which the mobile device connects to the digital content provider may bill a user of the mobile device on behalf of the digital content provider. The digital content provider may bill the user of the mobile device using a Premium SMS service.

The present invention relates to a method of producing particles having a particle size of less than 100 nm and surface areas of at least 20 m2 / g where the particles are free from agglomeration. The method involves synthesizing the particles within an emulsion having a 1-40% water content to form reverse micelles. In particular, the particles formed are metal oxide particles. The particles can be used to oxidize hydrocarbons, particularly methane.

A method of navigating through television programs is disclosed. A television receiver displays a mosaic image with sub-images representing the available programs. The receiver further receives an electronic program guide with program descriptions. Upon activating a "theme" button (42), the viewer can enter a desired program type, e.g. "movie". In response thereto, the brightness of the sub-images representing programs that are not desired is reduced. The user is thus assisted in navigating through programs he is interested in, while maintaining the mosaic structure he is familiar with, and without losing the association between channels and their positions on the mosaic screen.

A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top / bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top / bottom portion and the sidewall portion of the film by wet etching which removes the one of the top / bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.

A method for trimming a carbon-containing film includes: (i) providing a substrate having a carbon-containing film formed thereon; (ii) supplying a trimming gas and a rare gas to the reaction space, which trimming gas includes an oxygen-containing gas; and (iii) applying RF power between the electrodes to generate a plasma using the trimming gas and the rare gas and to thereby trim the carbon-containing film while controlling a trimming rate at 55 nm / min or less as a function of at least one parameter selected from the group consisting of a flow rate of an oxygen-containing gas, a flow rate of nitrogen-containing gas to be added to the oxygen-containing gas, pressure in the reaction space, RF power, a duty cycle of RF power, a distance between the electrodes, and a temperature of a susceptor on which the substrate is placed.

A method of manufacturing a semiconductor device includes forming a first insulating film over an underlying film by plasma polymerization of cyclic siloxane, and forming a second insulating film on the first insulating film by plasma polymerization of the cyclic siloxane continuously, after forming the first insulating film. The deposition rate of the first insulating film is slower than the deposition rate of the second insulating film.

A secure medical records maintenance system including a first server that stores patient identification information indexed by patient identification numbers (PINs) and a second server that stores patient medical data indexed by medical record identification numbers. For security purposes, the medical data maintained in the second remote server cannot be correlated to the associated patient identification information maintained in the first server based on the information contained in the servers. A correlation table uniquely associating each medical record identification number with a particular one of the patient identification numbers is used to allow correlation of the databases. The correlation table for a particular patient typically resides on a patient's removable memory storage device (smartcard). The correlation table for a practaioner's patients may also reside on the practitioner's computer, which is associated with the licensed medical practitioner having an assigned professional registration number

A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top / bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top / bottom portion according to the different chemical resistance properties.

A method for deploying interactive applications over a network containing host computers and group messaging servers is disclosed. The method operates in a conventional unicast network architecture comprised of conventional network links and unicast gateways and routers. The hosts send messages containing destination group addresses by unicast to the group messaging servers. The group addresses select message groups maintained by the group messaging servers. For each message group, the group messaging servers also maintain a list of all of the hosts that are members of the particular group. In its most simple implementation, the method consists of the group server receiving a message from a host containing a destination group address. Using the group address, the group messaging server then selects a message group which lists all of the host members of the group which are the targets of messages to the group. The group messaging server then forwards the message to each of the target hosts. In an interactive application, many messages will be arriving at the group server close to one another in time. Rather than simply forward each message to its targeted hosts, the group messaging server aggregates the contents of each of messages received during a specified time period and then sends an aggregated message to the targeted hosts. The time period can be defined in a number of ways. This method reduces the message traffic between hosts in a networked interactive application and contributes to reducing the latency in the communications between the hosts.

A plasma processing device includes a processing chamber defining a plasma processing space and a stage for mounting thereon a target substrate in the processing chamber. The plasma processing device further includes a gas supply mechanism for introducing a processing gas into the plasma processing space, a plasma generation mechanism for supplying electromagnetic energy into the plasma processing space, and a control unit configured to, if a command to start a plasma process for the target substrate mounted on a substrate carry-in stage is issued, perform a warm-up process for supplying the processing gas into the plasma processing space by the gas supply mechanism and supplying the electromagnetic energy by the plasma generation mechanism in a state where no target substrate is mounted on the stage.

A manufacturing method for a silicon carbide semiconductor device is disclosed. It includes an etching method in which an Al film and Ni film are laid on an SiC wafer in this order and wet-etched, whereby a two-layer etching mask is formed in which Ni film portions overhang Al film portions. Mesa grooves are formed by dry etching by using this etching mask.

In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has a first region at an inner side on a surface thereof, in which an average surface roughness is small such that a reaction product produced during an etching processing is not captured to be deposited, and a second region at an outer side from the first region, in which an average surface roughness is large such that a reaction product produced during the etching process is captured to be deposited. A boundary between the first and the second region is a part where an etching amount is relatively significantly changed compared to other parts while the focus ring is equipped in the plasma etching apparatus and the plasma etching is performed on the substrate.