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1277 results about "Gas composition" patented technology

The Gas composition of any gas can be characterised by listing the pure substances it contains, and stating for each substance its proportion of the gas mixture's molecule count.

Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone

A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.
Owner:APPLIED MATERIALS INC

Method and system for performing different deposition processes within a single chamber

A method, computer readable medium, and system for vapor deposition on a substrate that introduce a first process gas composition to a process space according to a first vapor deposition process, deposit a first film on the substrate, introduce a second process gas composition into a second process space different in size than the first process space, and deposit a second film on the substrate from the second process gas composition. As such, the system includes a process chamber including a first process space having a first volume. The process chamber further includes a second process space that includes at least a part of the first process space and that has a second volume different from the first volume. The first process space is configured for a first chemical vapor deposition, and the second process space is configured for a second chemical vapor deposition.
Owner:TOKYO ELECTRON LTD

Method for etching a trench having rounded top and bottom corners in a silicon substrate

The present invention provides straight forward methods for plasma etching a trench having rounded top corners, or rounded bottom corners, or both in a silicon substrate. A first method for creating a rounded top corner on the etched silicon trench comprises etching both an overlying silicon oxide layer and an upper portion of the silicon substrate during a "break-through" step which immediately precedes the step in which the silicon trench is etched. The plasma feed gas for the break-through step comprises carbon and fluorine. In this method, the photoresist layer used to pattern the etch stack is preferably not removed prior to the break-through etching step. Subsequent to the break-through step, a trench is etched to a desired depth in the silicon substrate using a different plasma feed gas composition. A second method for creating a rounded top corner on the etched silicon trench comprises formation of a built-up extension on the sidewall of an overlying patterned silicon nitride hard mask during etch (break-through) of a silicon oxide adhesion layer which lies between the hard mask and a silicone substrate. The built-up extension upon the silicon nitride sidewall acts as a sacrificial masking material during etch of the silicon trench, delaying etching of the silicon at the outer edges of the top of the trench. This permits completion of trench etching with delayed etching of the top corner of the trench and provides a more gentle rounding (increased radius) at the top corners of the trench. During the etching of the silicon trench to its final dimensions, it is desirable to round the bottom corners of the finished silicon trench. We have discovered that a more rounded bottom trench corner is obtained using a two-step silicon etch process where the second step of the process is carried out at a higher process chamber pressure than the first step.
Owner:APPLIED MATERIALS INC

Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone

A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.
Owner:APPLIED MATERIALS INC

Method of transporting or storing perishable produce

The invention allows cool rooms or sea containers designed for frozen goods to handle produce requiring more precisely controlled temperatures and conditions, e.g., vegetables and fruits requiring temperatures in the chilling range and often also needing control or modification of the atmosphere. Each load of produce (100) (e.g. of pallet size) is held in the sea container or cool room but is sealed from the air of the refrigerated environment by, for example, a plastics bag (56). The atmosphere within the bag is then circulated by a fan (12) (or by convection currents from a heating element) so as to pass through the load and around it via ducts (30) provided adjacent the bag (56). Heat exchange (50) between the circulating gas and the refrigerated environment, via the plastics film, serves to cool the load. However, if cooling is excessive a heating element can be used to raise the temperature of the circulating atmosphere. Gas composition of the atmosphere can be controlled by scrubbing, flushing, etc. via pipes from a central unit or at each load individually or by choosing semi-permeable plastic for the sealing bags.
Owner:TRANSPHERE SYST

Gas component sensor for gas oxides

InactiveUS7001495B2Additional sensorExcellent chemical stability and thermal compatibilityWeather/light/corrosion resistanceElectrolytic capacitorsElectrochemical responseGas composition
The present invention is a gas component sensor comprising novel electrolyte compositions. The electrolyte compositions in bulk, sintered or thin film embodiments are capable of forming with different-metal sensing and reference electrodes a highly stable gas oxide sensors. The novel electrolyte composition changes electrochemical reactions at the sensing and reference electrodes and the overall reaction of the electrodes and electrolyte. The novel electrolyte compositions have: (1) excellent chemical stability and thermal compatibility as to the electrodes and a preferred ceramic substrate, (2) excellent chemical stability with the environment as to the reference and sensing electrodes, which need not be sealed against the atmosphere to be sensed, (3) effective adherence to the substrate and electrode metals.
Owner:AIR Q

Composite hard mask for the etching of nanometer size magnetic multilayer based device

A composite hard mask is disclosed that enables sub-100 nm sized MTJ cells to be formed for advanced devices such as spin torque MRAMs. The hard mask has a lower non-magnetic metallic layer such as Ru to magnetically isolate an overlying middle metallic spacer such as MnPt from an underlying free layer. The middle metallic spacer provides a height margin during subsequent processing to avoid shorting between a bit line and the MTJ cell in the final device. An upper conductive layer may be made of Ta and is thin enough to allow a MTJ pattern in a thin overlying photoresist layer to be transferred through the Ta during a fluorocarbon etch without consuming all of the photoresist. The MTJ pattern is transferred through the remaining hard mask layers and underlying MTJ stack of layers with a second etch step using a C, H, and O etch gas composition.
Owner:TAIWAN SEMICON MFG CO LTD

Device with culture relics exhibiting and protecting function

The invention provides a device which can exhibit and protect cultural relics. The device is characterized in that the device comprises a base; a base plate is arranged at the top of the base; the bottom of a glass cover is fixed on the base plate through a safety lock reed, and a safety alarm is arranged on the safety lock reed; a gland bush is arranged at the butt joint of the glass cover and the base plate; a rotating bushing is arranged at the middle part of the base plate and a gland bush is arranged on the rotating bushing; rotating shafts are arranged inside the rotating bushing and the base; showcase stands are arranged at the top parts of the rotating shafts, and step motors are arranged at the tail ends of the rotating shafts; a temperature sensor, a pressure sensor, a humidity sensor and a gas composition sensor are arranged at two sides of the base plate; and a cavity refrigerating / heating device is arranged at the bottom of the base plate. The device has the advantages that the device can well exhibit the cultural relics and can create a manual protecting environment without damages. The device prevents oxidation, photodegradation, overheating volatilization, mould development and microorganisms and has the function of protecting the cultural relics and the precious article inside the cavity.
Owner:DONGHUA UNIV

Ultracapacitor pressure control system

An ultracapacitor design minimizes the internal pressure of the cell package by using gas getters, either alone or in combination with a resealable vent in the package. Reducing pressure extends the life of the ultracapacitor. The primary gas types generated within a particular ultracapacitor are measured under multiple possible application conditions. Such conditions may include variables of temperature, application voltage, electrolyte type, length of use, and cycles of use. The primary gas components may be determined and suitable gas getters for different conditions may be formulated. The gas getters may be packed within the ultracapacitor packages, formulated as a negative electrode, doped into the negative current collector, or layered with the negative current collector.
Owner:UCAP POWER INC
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