Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches

a technology of silicon nitride and selective forming, which is applied in the direction of coating, chemical vapor deposition coating, coating, etc., can solve the problems of reducing affecting so as to improve the quality of the film, reduce the density of the film, and improve the effect of plasma-enhanced chemical vapor deposition

Active Publication Date: 2017-08-24
ASM IP HLDG BV
View PDF3 Cites 305 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent text describes a technique for controlling the properties of a silicon nitride film during deposition and treatment. By using a plasma generated with a parallel plate electrode configuration, the direction of ion bombardment can be controlled, resulting in improved film quality with reduced wet etching rates and increased density. This technique can be applied to various substrates and can also be used to treat films to provide directionality of properties.

Problems solved by technology

However, when such a formation method is used, over-etching is required in order to remove footing of sidewalls in which the thickness of the sidewalls increases near and at the bottom, forming a slope.
Over-etching causes etching of an underlying layer and causes damage to a layer structure.
That is, when ion bombardment is exerted on a silicon nitride film during deposition of the film or after the deposition of the film, impurities can be removed from the film, thereby causing densification of the film and improving the film quality; however, when ion bombardment is intensified and asymmetrically exerted on the dielectric film in a direction perpendicular to the film, the film quality is degraded, thereby dissociating Si—N bonds, decreasing the density of the film, and increasing wet etching rates.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
  • Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
  • Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0078]A SiN film was formed on a Si substrate (Φ300 mm) having trenches by PEALD, one cycle of which was conducted under the conditions shown in Table 4 (deposition cycle) below using the PEALD apparatus illustrated in FIG. 1A and a gas supply system (FPS) illustrated in FIG. 1B.

[0079]After taking out the substrate from the reaction chamber, the substrate was subjected to wet etching under the conditions shown in Table 4 below.

TABLE 4(numbers are approximate)Conditions for Deposition CycleSubstrate temperature400° C.Pressure350 PaPrecursorSiI2H2Precursor pulse0.3 secPrecursor purge0.5 secReactantN2Flow rate of reactant (continuous)2000 sccmFlow rate of carrier gas (continuous)2000 sccm N2Flow rate of dilution gas (continuous)0 sccmRF power (13.56 MHz) for aVariable (see Fig. 7)300-mm waferRF power pulse3.3 secPurge0.1 secGrowth rate per cycle (on top surface)0.05 nm / cycleNumber of cycles (thickness of film on200 times (10 nm)top surface)Step coverage (side / top; side / bottom)100%; 100...

example 2

[0082]The SiN films were deposited under the conditions shown in Table 5, where the threshold RF power was determined to be approximately 400 W in the same manner as in Example 1. The SiN films were then subjected to wet etching under the conditions shown in Table 5. FIG. 8 shows Scanning Transmission Electron Microscope (STEM) photographs of cross-sectional views of the silicon nitride films. As can be seen from FIG. 8, when RF power was 700 W, the top / bottom portions of the film were selectively removed by wet etching, and substantially no film remained (no residual film was observed) on the top surface and at the bottom of the trench. When RF power was 500 W, the top / bottom portions of the film were more predominantly removed than was the sidewall portion of the film by wet etching, but residual film remained on the top surface and at the bottom of the trench, whereas the sidewall portion of the film mostly remained. When RF power was 300 W, the sidewall portion of the film was m...

example 3

[0083]The SiN film was deposited in the same manner as in Example 1 except that RF power was 880W. The SiN film was then subjected to wet etching under the same conditions as in Example 1. FIG. 9 shows a Scanning Transmission Electron Microscope (STEM) photograph of a cross-sectional view of the SiN film after the wet etching. As can be seen from FIG. 9, substantially no film remained (no residual film was observed) on the top surface and at the bottom of the trench.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Temperatureaaaaaaaaaa
Fractionaaaaaaaaaa
Login to View More

Abstract

A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top / bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top / bottom portion and the sidewall portion of the film by wet etching which removes the one of the top / bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.

Description

BACKGROUND[0001]Field of the Invention[0002]The present invention relates generally to a method for fabricating a layer structure constituted by a dielectric film containing a Si—N bond in a trench formed in an upper surface of a substrate.[0003]Related Art[0004]In manufacturing processes of large-scale integrated circuits (LSIs), there are several processes for forming sidewalls in trenches. The sidewalls are used as spacers or used for blocking etching of a structure from side surfaces of trenches. Conventionally, the sidewalls were formed by forming a conformal film on surfaces of trenches, and then removing portions thereof formed on an upper surface in which the trenches were formed and portions formed on bottom surfaces of the trenches by asymmetrical etching. However, when such a formation method is used, over-etching is required in order to remove footing of sidewalls in which the thickness of the sidewalls increases near and at the bottom, forming a slope. Over-etching caus...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/02H01L21/311
CPCH01L21/0217H01L21/02274H01L21/02211H01L21/0228H01L21/31111H01L21/0234C23C16/045C23C16/345C23C16/45536C23C16/505C23C16/56H01L21/3105H01L21/76831H01L21/3211H01L21/0214H01L21/0254H05H1/46H01J37/32174H01J37/32091H01L21/30604H01L21/76837
Inventor ISHIKAWA, DAIFUKAZAWA, ATSUKI
Owner ASM IP HLDG BV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com