421 results about "Self limiting" patented technology

Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Preferred embodiments are directed to providing conformal lining over openings formed in porous materials. Trenches are formed in, preferably, insulating layers. The layers are then adequately treated with a particular plasma process. Following this plasma treatment a self-limiting, self-saturating atomic layer deposition (ALD) reaction can occur without significantly filling the pores forming improved interconnects.

Methods for accurate and conformal removal of atomic layers of materials make use of the self-limiting nature of adsorption of at least one reactant on the substrate surface. In certain embodiments, a first reactant is introduced to the substrate in step (a) and is adsorbed on the substrate surface until the surface is partially or fully saturated. A second reactant is then added in step (b), reacting with the adsorbed layer of the first reactant to form an etchant. The amount of an etchant, and, consequently, the amount of etched material is limited by the amount of adsorbed first reactant. By repeating steps (a) and (b), controlled atomic-scale etching of material is achieved. These methods may be used in interconnect pre-clean applications, gate dielectric processing, manufacturing of memory devices, or any other applications where removal of one or multiple atomic layers of material is desired.

By forming an aluminum nitride layer by a self-limiting process sequence, the interface characteristics of a copper-based metallization layer may be significantly enhanced while nevertheless maintaining the overall permittivity of the layer stack at a lower level.

A wireless system and method for implementing call controls (such as parental controls) for wireless telephones via a call-intercept platform (including a soft switch and / or an SS7 interconnection node, and SQL database), and a conventional mobile phone that makes and receives all outgoing calls through the call intercept platform. The call intercept platform includes secure web server to provide a secure website point of entry for allowing parents to specify a ruleset of parental controls that is stored in the SQL database. Every outgoing call from the mobile phone is routed into the call-intercept platform, which logs the call, crosschecks the mobile phone and outgoing call number against the stored ruleset for that phone / user, and selectively screens te calls. Incoming calls are automatically forwarded from the wireless carrier to the call intercept platform and are logged, cross-checked and selectively screened. The secure web portal allows parents and guardians or other individuals who desire to self-limit call usage to thoroughly manage their dependent's or their own phone, inclusive of viewing calls, activating and deactivating controls, customizing controls, as well as purchasing prepaid minutes and managing their accounts.

A method of treating vulnerable plaque comprising intentionally damaging or rupturing the vulnerable plaque using a wingless balloon which is inflated from a wingless unexpanded diameter to a limited expanded diameter. This process produces significant increase in ECM synthesis at the site of the damage or rupture. As a result, the method strengthens the vulnerable plaque while minimizing or avoiding damage to the surrounding wall of the body lumen or damaging a stable plaque mistakenly believed to be a vulnerable plaque. The method of the invention is particularly useful in treating a fibroatheroma type of vulnerable plaque. In one embodiment, the balloon is self-limiting such that it expands compliantly at initial inflation pressures, and above nominal pressure it expands noncompliantly. In an alternative embodiment, the balloon is inflated using a diameter-limiting device, such as a device which limits the inflation pressure or the volume of inflation fluid in the balloon.

An electronic system for selectively detecting and identifying a plurality of chemical species, which comprises an array of nanostructure sensing devices, is disclosed. Within the array, there are at least two different selectivities for sensing among the nanostructure sensing devices. Methods for fabricating the electronic system are also disclosed. The methods involve modifiying nanostructures within the devices to have different selectivity for sensing chemical species. Modification can involve chemical, electrochemical, and self-limiting point defect reactions. Reactants for these reactions can be supplied using a bath method or a chemical jet method. Methods for using the arrays of nanostructure sensing devices to detect and identify a plurality of chemical species are also provided. The methods involve comparing signals from nanostructure sensing devices that have not been exposed to the chemical species of interest with signals from nanostructure sensing devices that have been exposed to the chemical species of interest. Nanostructure sensing device array structures that can measure and subtract out environmental factors are also disclosed.

Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g., in separate pulses, and the copper source pulses can gradually increase in frequency, forming a transition region, until pure copper is formed at the upper surface. Advantageously, graded compositions in these and a variety of other contexts help to avoid such problems as etch rate control, electromigration and non-ohmic electrical contact that can occur at sharp material interfaces. In some embodiments additional seed layers or additional transition layers are provided.

An improved method is provided to enhance skin appearance and health, in which skin is cleaned (or exfoliated) and conditioned by use of microelements affixed to a base element or hand-held patch. For the microstructure used in the improved method, the dimensions of the microelements are controlled so as to remove a certain number of layers of skin cells and to accumulate and retain those skin cells, along with other foreign substances, into areas between the microelements. In another embodiment of the improved method, a conditioning compound or therapeutic active can be applied to the exfoliated skin to enhance the skin. Moreover, the amount of skin cells accumulated using the improved method represents a self-limiting maximum quantity that cannot be substantially exceeded regardless of the number of attempts by a user to re-use the microstructure apparatus associated with the improved method. Some of the microelement shapes are purposefully designed with distal ends that exhibit sharp edges rather than sharp tips to reduce skin irritation resulting from use of the improved method.

A catalyst composition for the polymerization of propylene comprising one or more Ziegler-Natta procatalyst compositions comprising one or more transition metal compounds and one or more esters of aromatic dicarboxylic acid internal electron donors; one or more aluminum containing cocatalysts; a selectivity control agent (SCA) comprising at least one silicon containing compound containing at least one C1-10 alkoxy group bonded to a silicon atom, and one or more activity limiting agent (ALA) compounds comprising one or more aliphatic or cycloaliphatic carboxylic acids; alkyl-, cycloalkyl- or alkyl(poly)(oxyalkyl)-(poly)ester derivatives thereof; or inertly substituted derivatives of the foregoing.