113775 results about "Capacitor" patented technology

A pixel structure of an active matrix organic light-emitting diode (AMOLED) includes an organic light-emitting diode (OLED), a data line, at least one scan line, at least one switch thin film transistor (TFT), at least one driving TFT and at least one storage capacitor with two transparent electrodes. Since both the electrodes of the transparent storage capacitor are formed by transparent material, the aperture ratio of the pixel and the area of the capacitor largely increase and can reach 50%˜95% of a pixel area. Thus, the display quality of an AMOLED panel can be improved.

According to the invention, a finger-operated switch for activating and operating an ultrasonic surgical handpiece is provided. The power output of the surgical handpiece is responsive and proportional to the pressure applied to the finger-operated switch. The finger-operated switch includes, but not limited to, force sensitive resistors whose resistance is proportional to the force applied by the finger of the human operator of the surgical handpiece, force sensitive capacitors whose capacitance is proportional to the pressure, deflection or compression of the insulation layer between two electrodes or is proportional to the spacing between the two conductive layers, strain gauges mounted underneath or integral to the housing of the surgical handpiece such that the pressure applied thereto results in an output change in the strain gauges, magnets or ferromagnets encased or embedded in an elastomer with a sensor inside the surgical handpiece that detects the field strength of the magnet and monitors changes relative to the force applied to the handpiece housing, and piezo film or piezo ceramic whose charge or voltage is proportional to the force applied.

An electrosurgical generator for supplying RF power to an electrosurgical instrument for cutting or vaporising tissue has an RF output stage with RF output devices, a series-resonant output network and an RF output. The generator offers improved cutting and vaporising performance, especially in relation to the reliability with which an arc can be struck when presented with an initial load impedance load. This is achieved by virtue of the output stage being capable of maintaining output pulses of at least 1 kW peak by supplying the RF output devices from a large reservoir capacitor. An appropriate combination of cutting performance and haemostasis is provided by allowing for pulsed or continuous wave operation once an arc has been established, according to whether or not a surplus energy condition exists, as indicated by the voltage across the reservoir capacitor.

An electrosurgical system includes a generator for generating radio frequency (RF) power, and an electrosurgical instrument including at least three electrodes. The generator comprises an RF output stage having at least a pair of RF output lines, a power supply coupled to the output stage for supplying power to the output stage, and a controller capable of varying the RF power signal supplied to the output lines. The system also includes a selection circuit having at least three output connections each in electrical connection with a respective one of the at least three electrodes. This selection circuit operates to vary the coupling between the RF output stage and the three or more output connections. A switching device operable by the user causes the selection circuit to vary the electrode or electrodes to which RF power is supplied, and also causes the RF power signal supplied to at least one of the at least three output connections to vary depending on the electrode or electrodes to which RF power is supplied. In one arrangement of the selection circuit, one of the electrodes has no direct connection to the output stage of the generator and is connected via a capacitor to another of the electrodes.

A secondary power source system, includes a first unit receiving a primary power input and restricting a current used for charging to a predetermined amount, a second unit including a device providing capacitance, receiving a first output from the first unit with restricted current, a third unit generating a second output of a certain voltage, and a fourth unit performing a logical OR operation with the primary power input, first output from the first unit and second output from the second unit, to generate a single third output of a certain voltage.

An apparatus for controlling the speed of an AC motor comprising a switch adapted to be coupled in parallel with power terminals for the AC motor; a capacitor coupled in series with the parallel combination of the switch and the motor; the capacitor adapted to provide an AC supply voltage from an AC source to the parallel circuit comprising the motor and the switch; and a control circuit for controlling the conduction time of the switch in order to vary the speed of the motor. The switch is preferably pulse-width modulated at a frequency twice the line frequency of the AC supply voltage, and the switch is turned on when the voltage across the AC motor is zero volts. The apparatus is operable to provide for continuously variable control of the motor speed while minimizing acoustic noise in the motor.

An energy-reclamation apparatus of the present invention including at least a supercapacitor element connected with a charging source and a controlled circuit. After the supercapacitor element is charged to the potential of the charging source, the supercapacitor element and the charging source will work in series to conduct a repetitive polarity reversal of the supercapacitor element through a controlled circuit. As the supercapacitor element discharges, it is reversely charged concurrently. In other words, while the voltage of the supercapacitor element is decreasing on the side, a negative potential is complementarily developing on the other side. By repeatedly reversing the polarity of the supercapacitor element, more energy from the serially connected charging source can be reclaimed and reused.

According to the invention, a finger-operated switch for activating and operating an ultrasonic surgical handpiece is provided. The power output of the surgical handpiece is responsive and proportional to the pressure applied to the finger-operated switch. The finger-operated switch includes, but not limited to, force sensitive resistors whose resistance is proportional to the force applied by the finger of the human operator of the surgical handpiece, force sensitive capacitors whose capacitance is proportional to the pressure, deflection or compression of the insulation layer between two electrodes or is proportional to the spacing between the two conductive layers, strain gauges mounted underneath or integral to the housing of the surgical handpiece such that the pressure applied thereto results in an output change in the strain gauges, magnets or ferromagnets encased or embedded in an elastomer with a sensor inside the surgical handpiece that detects the field strength of the magnet and monitors changes relative to the force applied to the handpiece housing, and piezo film or piezo ceramic whose charge or voltage is proportional to the force applied.

A method of forming a metal layer having excellent thermal and oxidation resistant characteristics using atomic layer deposition is provided. The metal layer includes a reactive metal (A), an element (B) for the amorphous combination between the reactive metal (A) and nitrogen (N), and nitrogen (N). The reactive metal (A) may be titanium (Ti), tantalum (Ta), tungsten (W), zirconium (Zr), hafnium (Hf), molybdenum (Mo) or niobium (Nb). The amorphous combination element (B) may be aluminum (Al), silicon (Si) or boron (B). The metal layer is formed by alternately injecting pulsed source gases for the elements (A, B and N) into a chamber according to atomic layer deposition to thereby alternately stack atomic layers. Accordingly, the composition ratio of a nitrogen compound (A-B-N) of the metal layer can be desirably adjusted just by appropriately determining the number of injection pulses of each source gas. According to the composition ratio, a desirable electrical conductivity and resistance of the metal layer can be accurately obtained. The atomic layers are individually deposited, thereby realizing excellent step coverage even in a complex and compact region. A metal layer formed by atomic layer deposition can be employed as a barrier metal layer, a lower electrode or an upper electrode in a semiconductor device.

An arrangement is provided for charging a charge storage device by placing the charge storage device in an RF or microwave radiation field. One or more antennas which receive the radiated RF electromagnetic field are placed on the charge storage device. Rectifiers connected to the antennas rectify the received RF electromagnetic field an produce a DC output current which is used to charge the charge storage device. The charge storage device may be a battery or a capacitor and may form an integral part of an electronic device. The same RF field that charges the charge storage device can also be employed to communicate data to transponders which may be associated with computing devices.

A network of collection, charging and distribution machines collect, charge and distribute portable electrical energy storage devices (e.g., batteries, supercapacitors or ultracapacitors). To avoid theft and tampering of the portable electrical energy storage devices, by default, each portable electrical energy storage device is locked in and operably connected to the vehicle to which it provides power unless the vehicle comes within the vicinity of a collection, charging and distribution machine or other authorized external device such as that in a service center. Once within the vicinity of a collection, charging and distribution machine or other authorized external device a locking mechanism in the vehicle or within the portable electrical energy storage device unlocks and allows the portable electrical energy storage device to be exchanged or serviced.

A display including a current drive circuit capable of supplying a desired current to a light-emitting element in each pixel stably and accurately irrespective of the characteristic variations of active elements in the pixel, thereby providing a high-definition image. Each pixel is composed of a receiving transistor (TFT3) for receiving a signal current (1w) from a data ine (data) when a scanning line (scanA) is selected, a converting transistor (TFT1) for converting the current level of the received signal current (1w) to a voltage level and holding the voltage level, and a driving transistor (TFT3) for allowing a drive current having a current level corresponding to the held voltage level to flow through light-emitting element (OLED). The converting thin film transistor (TFT1) generates the converted voltage level at its gate by allowing the signal current (Iw) through its channel, and a capacitor (C) holds the voltage level at the gate of the transistor (TFT1). The transistor (TFT2) allows the drive current having a current level corresponding to the voltage level held by the capacitor (C) to flow through the light-emitting element (OLED).

Method and apparatus for providing a leak detection circuit for data monitoring and management system using the guard trace of a glucose sensor by applying a leak detection test signal to determine whether a leakage current is present is provided. The leak detection circuit may includes an interface circuit such as a capacitor coupled to the guard trace to detect the leakage current when the leak detection test signal is applied to the guard trace, such that the user or patient using the data monitoring and management system such as glucose monitoring systems may be promptly and accurately notified of a failed sensor, and to alert the user to replace the sensor.

A drive unit for driving a corresponding one of organic EL elements of an active matrix EL display device includes a blanking switch for blanking the video signal stored in a storage capacitor in each frame period before the start of the next frame period. A drive transistor drives a corresponding EL element based on the correct current supplied for this If the video signal is a current signal, a transistor operating as a current-voltage converter is provided

A process for depositing a silicon-based material on a substrate uses the technology of plasma-enhanced atomic layer deposition. The process is carried out over several cycles, wherein each cycle includes: exposing the substrate to a first precursor, which is an organometallic silicon precursor; and applying a plasma of at least a second precursor, different from the first precursor. Semiconductor products such as 3D capacitors, vertical transistor gate spacers, and conformal transistor stressors are made from the process.

A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor comprises a chalcogenide with Group IB or Group IIB metals, the anode comprises silver, and the cathode comprises aluminum or other conductor. When a voltage is applied to the anode and the cathode, a non-volatile metal dendrite grows from the cathode along the surface of the fast ion conductor towards the anode. The growth rate of the dendrite is a function of the applied voltage and time. The growth of the dendrite may be stopped by removing the voltage and the dendrite may be retracted by reversing the voltage polarity at the anode and cathode. Changes in the length of the dendrite affect the resistance and capacitance of the PMC. The PMC may be incorporated into a variety of technologies such as memory devices, programmable resistor / capacitor devices, optical devices, sensors, and the like. Electrodes additional to the cathode and anode can be provided to serve as outputs or additional outputs of the devices in sensing electrical characteristics which are dependent upon the extent of the dendrite.

Implantable medical devices (IMDs) having sense amplifiers for sensing physiologic signals and parameters, RF telemetry capabilities for uplink transmitting patient data and downlink receiving programming and interrogation commands to and from an external programmer or other medical device are disclosed. At least one IC chip and discrete components have a volume and dimensions that are optimally minimized to reduce its volumetric form factor. Miniaturization techniques include forming notch filters of MEMS structures or forming discrete circuit notch filters by one or more of: (1) IC fabricating inductors into one or more IC chips mounted to the RF module substrate; (2) mounting each IC chip into a well of the RF module substrate and using short bonding wires to electrically connect bond pads of the RF module substrate and the IC chip; and (3) surface mounting discrete capacitors over IC chips to reduce space taken up on the RF module substrate. The IC fabricated inductors are preferably fabricated as planar spiral wound conductive traces formed of high conductive metals to reduce trace height and width while maintaining low resistance, thereby reducing parasitic capacitances between adjacent trace side walls and with a ground plane of the IC chip. The spiral winding preferably is square or rectangular, but having truncated turns to eliminate 90° angles that cause point-to-point parasitic capacitances. The planar spiral wound conductive traces are further preferably suspended over the ground plane of the IC chip substrate by micromachining underlying substrate material away to thereby reduce parasitic capacitances.

An image display apparatus comprises a pixel having a drive transistor and a pixel display element which are connected in series between a first power line and a second power line, a holding capacitor connected to a gate electrode of the drive transistor, and a selection transistor connected between a signal line and the gate electrode of the drive transistor. When the selection transistor is turned on, gradation pixel data is written in the holding capacitor from the signal line. The charge of gradation pixel data written in the holding capacitor is discharged for a certain period through the drive transistor, thereafter the charge of the gradation pixel data stored in the holding capacitor is held by floating the gate electrode of the drive transistor.

The present invention provides wireless power supply systems that wirelessly supply power to a remote device for rapidly charging a charge storage capacitor, which charges a battery with the power stored in the charge storage capacitor. This allows the remote device to be positioned near the inductive power supply for rapid charging of the charge storage capacitor and allows battery charging to continue even after the remote device is removed from the inductive power supply.

In a method of forming a layer using an atomic layer deposition process, after a substrate is loaded into a chamber, a first reactant is provided onto the substrate. The first reactant is partially chemisorbed on the substrate. A second reactant is introduced into the chamber to form a preliminary layer on the substrate by chemically reacting the second reactant with the chemisorbed first reactant. Impurities in the preliminary layer and unreacted reactants are simultaneously removed using a plasma for removing impurities to thereby form the layer on the substrate. The impurities in the layer may be effectively removed so that the layer may have reduced leakage current.

A write-caching RAID controller is disclosed. The controller includes a CPU that manages transfers of posted-write data from host computers to a volatile memory and transfers of the posted-write data from the volatile memory to storage devices when a main power source is supplying power to the RAID controller. A memory controller flushes the posted-write data from the volatile memory to the non-volatile memory when main power fails, during which time capacitors provide power to the memory controller, volatile memory, and non-volatile memory, but not to the CPU, in order to reduce the energy storage requirements of the capacitors. During main power provision, the CPU programs the memory controller with information needed to perform the flush operation, such as the location and size of the posted-write data in the volatile memory and various flush operation characteristics.

A solid-state image sensor of a charge sorting method used in a time-of-flight measurement method, in which noise derived from background light, which is caused by the reflection light from the subject derived from background light is eliminated, reflection light from the subject derived from a predetermined light source, which is previously set in the solid-state image sensor, is effectively extracted as a signal component to achieve high sensitivity and low noise, which is a solid-state image sensor that is equipped with a plurality of charge-storage sections, discriminates photoelectrons generated by incoming light on the incoming timing and sort to the above-described plurality of charge-storage sections, and measures the timing of the incoming light, in which the sensor has: a plurality of capacitors that capable of conducting to the plurality of charge-storage sections; and a control section that controls a conducted state between the above-described plurality of charge-storage sections and the above-described plurality of capacitors, in which by selectively conducting the above-described plurality of charge-storage sections and the above-described plurality of capacitors by the control of the above-described control section, the difference component of charge stored in the above-described plurality of charge-storage sections is extracted.

A composite, layered, integrated circuit formed by bonding of insulator layers on wafers provides for combination of otherwise incompatible technologies such as trench capacitor DRAM arrays and high performance, low power, low voltage silicon on insulator (SOI) switching transistors and short signal propagation paths between devices formed on respective wafer layers of a chip. In preferred embodiments, an SOI wafer is formed by hydrophilic bonding of a wafer over an integrated circuit device and then cleaving a layer of the second wafer away using implanted hydrogen and low temperature heat treatment. Further wafers of various structures and compositions may be bonded thereover and connections between circuit elements and connection pads in respective wafers made using short vias that provide fast signal propagation as well as providing more numerous connections than can be provided on chip edges.

A hybrid film, comprising a first polymer film having a plasma-treated surface and a second polymer film having first and second surfaces, with the first surface of the second polymer film being disposed along the first plasma-treated surface of the first polymer film, has superior thermal and mechanical properties that improve performance in a number of applications, including food packaging, thin film metallized and foil capacitors, metal evaporated magnetic tapes, flexible electrical cables, and decorative and optically variable films. One or more metal layers may be deposited on either the plasma-treated surface of the substrate and / or the radiation-cured acrylate polymer A ceramic layer may be deposited on the radiation-cured acrylate polymer to provide an oxygen and moisture barrier film. The hybrid film is produced using a high speed, vacuum polymer deposition process that is capable of forming thin, uniform, high temperature, cross-liked acrylate polymers on specific thermoplastic or thermoset films. Radiation curing is employed to cross-link the acrylate monomer. The hybrid film can be produced in-line with the metallization or ceramic coating process, in the same vacuum chamber and with minimal additional cost.

A pixel circuit having a function of compensating for characteristic variation of an electro-optical element and threshold voltage variation of a transistor is formed from a reduced number of component elements. The pixel circuit includes an electro-optical element, a holding capacitor, and five N-channel thin film transistors including a sampling transistor, a drive transistor, a switching transistor, and first and second detection transistors. The sampling transistor samples and supplies an input signal from a signal line so as to be held into the holding capacitor. The driving transistor drives the electro-optical element with current in response to the held signal potential. The first and second detection transistors detect a threshold voltage of the drive transistor and supply the detected voltage into the holding capacitor in order to cancel an influence of the threshold voltage in advance.

Provided is a method of producing a light-emitting apparatus having a field effect transistor for driving an organic EL device, the field effect transistor including an oxide semiconductor containing at least one element selected from In and Zn, the method including the steps of: forming a field effect transistor on a substrate; forming an insulating layer; forming a lower electrode on the insulating layer; forming an organic layer for constituting an organic EL device on the lower electrode; forming an upper electrode on the organic layer; and after the step of forming the semiconductor layer of the field effect transistor and before the step of forming the organic layer, performing heat treatment such that an amount of a component that is desorbable as H2O from the field effect transistor during the step of forming the organic layer is less than 10−5 g / m2.

The present invention discloses methods for depositing a material, particularly a conductive material, in cavities of a substrate and forming bonding contacts or pads thereon. An intracavity structure may be utilized in conjunction with embodiments of the present invention to provide efficient filling of diverse cavities within the substrate. Also provided are embodiments for interconnection structures using filled cavities, along with electrically conductive or reactive structures which may include capacitors fabricated within a substrate.