11605results about How to "Inhibition formation" patented technology

A perfume encapsulate comprises an aminoplast capsule, the capsule shell comprising urea-formaldehyde or melamine-formaldehyde polymer and a second polymer comprising a polymer or copolymer of one or more anhydrides, preferably ethylene/maleic anhydride copolymer. The second polymer improves the stability of the capsules with respect to surfactant, thus improving perfume retention properties and enabling use of the capsules in aqueous surfactant-containing products in a way that has not hitherto been possible.

Semiconductor processing equipment that has increased efficiency, throughput, and stability, as well as reduced operating cost, footprint, and faceprint is provided. Other than during deposition, the atmosphere of both the reaction chamber and the transfer chamber are evacuated using the transfer chamber exhaust port, which is located below the surface of the semiconductor wafer. This configuration prevents particles generated during wafer transfer or during deposition from adhering to the surface of the semiconductor wafer. Additionally, by introducing a purge gas into the transfer chamber during deposition, and by using an insulation separating plate 34, the atmospheres of the transfer and reaction chambers can be effectively isolated from each other, thereby preventing deposition on the walls and components of the transfer chamber. Finally, the configuration described herein permits a wafer buffer mechanism to be used with the semiconductor processing equipment, thereby further increasing throughput and efficiency.

The present invention provides a conductive adhesive agent capable of being diluted with a solvent to give good coating workability and allowing formation of a conductive joint excellent in both thermal conductivity and electrical conductivity by inhibiting a gas generated when a binder resin is heat-cured after attachment of a part. The conductive adhesive agent according to the present invention is a conductive adhesive agent wherein, based on 100 parts by weight of silver powder having an average particle diameter of micrometers, which is used for a conductive medium, e.g. as a main component, 1 to 10 parts by weight of silver fine particles having an average particle diameter of nanometers is used in combination therewith and 5 to 15 parts by weight of thermosetting resin as a binder resin component and 10 parts or less by weight of solvent for adjustment of a fluid viscosity are blended therein as essential components, and by selection of such a blending ratio, generation of a gas component during heating and curing of the thermosetting resin to prevent formation of voids, and at the same time, fabrication of a conductive joint excellent in thermal conductivity and electrical conductivity is achieved.

A method of cleaning a substrate processing chamber that enables formation of an oxide film on a surface of a processing chamber inside component to be prevented. A substrate processing chamber 11 has therein a processing space S into which a wafer W is transferred and carries out reactive ion etching on the wafer W in the processing space S. The substrate processing chamber 11 has an upper electrode plate 38 that comprises silicon and a lower surface of which is exposed to the processing space S. A dry cleaning is carried out on the upper electrode plate 38 using oxygen radicals produced from oxygen gas introduced into the processing space S. An oxide removal processing is carried out on the upper electrode plate 38 using fluorine ions and fluorine radicals produced from carbon tetrafluoride gas introduced into the processing space S.

A system for monitoring medical conditions including pressure ulcers, pressure-induced ischemia and related medical conditions comprises at least one sensor adapted to detect one or more patient characteristic including at least position, orientation, temperature, acceleration, moisture, resistance, stress, heart rate, respiration rate, and blood oxygenation, a host for processing the data received from the sensors together with historical patient data to develop an assessment of patient condition and suggested course of treatment. In some embodiments, the system can further include a support surface having one or more sensors incorporated therein either in addition to sensors affixed to the patient or as an alternative thereof. The support surface is, in some embodiments, capable of responding to commands from the host for assisting in implementing a course of action for patient treatment. The sensor can include bi-axial or tri-axial accelerometers, as well as resistive, inductive, capactive, magnetic and other sensing devices, depending on whether the sensor is located on the patient or the support surface, and for what purpose.

The invention provides methods for stabilizing a nucleic acid sequencing reaction. Generally, methods of the invention include exposing a target nucleic acid to a single-stranded nucleic acid binding protein and performing a sequencing reaction.

A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(In_XGa_1-x)Se₂) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described. The machine is adapted to incorporate dual cylindrical rotary magnetron technology to manufacture the improved solar cell material in a single pass.

A gas processing apparatus 1 includes a processing container 2 for applying a processing to a wafer W while using a processing gas, a mount table 5 arranged in the processing container 2 to mount the wafer W, a shower head 22 arranged corresponding to the wafer W on the mount table 5 to discharge the processing gas into the processing container 2 and exhausting means 132 for exhausting the interior of the processing container 2. The shower head 22 has first gas discharging holes 46 arranged corresponding to the wafer W mounted on the mount table 5 and second gas discharging holes 47 arranged around the first gas discharging holes 46 independently to discharge the processing gas to the peripheral part of the wafer W. Thus, with a uniform gas supply to a substrate, it is possible to perform a uniform gas processing.

This invention is a system for the treatment of body passageways; in particular, vessels with vascular disease. The system includes an endovascular graft with a low-profile delivery configuration and a deployed configuration in which it conforms to the morphology of the vessel or body passageway to be treated as well as various connector members and stents. The graft is made from an inflatable graft body section and may be bifurcated. One or more inflatable cuffs may be disposed at either end of the graft body section. At least one inflatable channel is disposed between and in fluid communication with the inflatable cuffs.

The present invention concerns methods and compositions for stably tethered structures of defined compositions, which may have multiple functionalities and/or binding specificities. Preferred embodiments concern hexameric stably tethered structures comprising one or more IgG antibody fragments and which may be monospecific or bispecific. The disclosed methods and compositions provide a facile and general way to obtain stably tethered structures of virtually any functionality and/or binding specificity. The stably tethered structures may be administered to subjects for diagnostic and/or therapeutic use, for example for treatment of cancer or autoimmune disease. The stably tethered structures may bind to and/or be conjugated to a variety of known effectors, such as drugs, enzymes, radionuclides, therapeutic agents and/or diagnostic agents.

The invention relates to a process for making a thin film starting from a substrate (1) of a solid material with a plane face (2) comprising:the implantation of gaseous compounds in the substrate (1) to make a layer of micro-cavities (4) at a depth from the said plane face (2) corresponding to the thickness of the required thin film, the gaseous compounds being implanted under conditions that could weaken the substrate at the layer of micro-cavities,partial or total separation of the thin film from the rest of the substrate (1), this separation comprising a step in which thermal energy is added and pressure is applied to the said plane face (2).

An integrated circuit, and manufacturing method therefor, is provided. A gate dielectric and a gate are provided respectively on and over a semiconductor substrate. A junction is formed adjacent the gate dielectric and a shaped spacer is formed around the gate. A spacer is formed under the shaped spacer and a liner is formed under the spacer. A first dielectric layer is formed over the semiconductor substrate, the shaped spacer, the spacer, the liner, and the gate. A second dielectric layer is formed over the first dielectric layer. A local interconnect opening is formed in the second dielectric layer down to the first dielectric layer. The local interconnect opening in the first dielectric layer is opened to expose the junction in the semiconductor substrate and the first gate. The local interconnect openings in the first and second dielectric layers are filled with a conductive material.

A CVD apparatus produces plasma to generate radicals and uses the radicals, silane, and the like so as to deposit films on substrates in a vacuum vessel 12. The vacuum vessel has a partitioning wall section 14 for separating the inside thereof into a plasma-generating space 15 and a film deposition process space 16. The partitioning wall section has a plurality of through-holes 25 and diffusion holes 26. An interior space 24 receives the silane or the like fed into the film deposition process space through diffusion holes 16. The radicals produced in the plasma-generating space are fed into the plasma-generating space through the through-holes. The through-holes satisfy the condition of uL/D>1, where u represents the gas flow velocity in the through-holes, L represents the effective length of the through-holes, and D represents the inter-diffusion coefficient.