A process for fabricating an electronic device structure on or in a substrate. A storage and dispensing vessel is provided, containing a
solid-phase physical
sorbent medium having physically adsorbed thereon a fluid for fabrication of the electronic device structure, e.g., a source fluid for a material constituent of the electronic device structure, or a
reagent such as an etchant or
mask material which is utilized in the fabrication of the electronic device structure but does not compose or form a material constituent of the electronic device structure. In the process, the source fluid is desorbed from the physical
sorbent medium and dispensing source fluid from the storage and dispensing vessel, and contacted with the substrate, under conditions effective to utilize the material constituent on or in the substrate. The contacting step of the process may include process steps such as
ion implantation; epitaxial growth;
plasma etching;
reactive ion etching; metallization;
physical vapor deposition;
chemical vapor deposition; cleaning;
doping; etc. The process of the invention may be employed to fabricate electronic device structures such as transistors; capacitors; resistors; memory cells;
dielectric material; buried doped substrate regions; metallization
layers; channel stop
layers; source
layers; gate layers; drain layers;
oxide layers; field emitter elements;
passivation layers; interconnects; polycides; electrodes; trench structures;
ion implanted material layers; via plugs; precursor structures for the foregoing electronic device structures; and device assemblies comprising more than one of the foregoing electronic device structures. The electronic device structure fabricated by such process may in turn may be employed as a component of an electronic product such as a
telecommunications device or electronic appliance.