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5522 results about "Metal catalyst" patented technology

Metal catalysts are often based on bismuth, tin, mercury, zinc or potassium chemicals. Metal catalysts can be used in conjunction with amine catalysts to help get the reaction going.

Process for producing single wall nanotubes using unsupported metal catalysts

A process for producing hollow, single-walled carbon nanotubes by catalytic decomposition of one or more gaseous carbon compounds by first forming a gas phase mixture carbon feed stock gas comprising one or more gaseous carbon compounds, each having one to six carbon atoms and only H, O, N, S or Cl as hetero atoms, optionally admixed with hydrogen, and a gas phase metal containing compound which is unstable under reaction conditions for said decomposition, and which forms a metal containing catalyst which acts as a decomposition catalyst under reaction conditions; and then conducting said decomposition reaction under decomposition reaction conditions, thereby producing said nanotubes.
Owner:HYPERION CATALYSIS INT

Process for the continuous production of aligned carbon nanotubes

Novel methods and apparati for continuous production of aligned carbon nanotubes are disclosed. In one aspect, the method comprises dispersion of a metal catalyst in a liquid hydrocarbon to form a feed solution, and volatilizing the feed solution in a reactor through which a substrate is continuously passed to allow growth of nanotubes thereon. In another aspect, the apparatus comprises a reactor, a tube-within-a-tube injector, and a conveyor belt for passing a substrate through the reactor. The present invention further discloses a method for restricting the external diameter of carbon nanotubes produced thereby comprising passing the feed solution through injector tubing of a specified diameter, followed by passing the feed solution through an inert, porous medium. The method and apparati of this invention provide a means for producing aligned carbon nanotubes of a particular external diameter which is suitable for large scale production in an industrial setting.
Owner:UNIV OF KENTUCKY RES FOUND

Halogen free syntheses of aminosilanes by catalytic dehydrogenative coupling

Compounds and method of preparation of Si—X and Ge—X compounds (X═N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X═N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.
Owner:LAIR LIQUIDE SA POUR LETUDE & LEXPLOITATION DES PROCEDES GEORGES CLAUDE

Method and apparatus for forming capping film

A capping film serving as an interconnect protective film formed on a surface of interconnect metal on a semiconductor substrate is formed after forming a catalyst layer for electroless plating under low oxygen concentration condition. A method for forming a capping film for protecting a surface of interconnect metal includes preparing a metal catalyst solution containing a metal element nobler than interconnect metal and having dissolved oxygen concentration of 7 ppm or less, bringing said metal catalyst solution into contact with a surface of interconnect metal to form a metal catalyst layer on the surface of the interconnect metal, and performing electroless plating to form a capping film on the surface of the interconnect metal.
Owner:EBARA CORP

Single-Walled Carbon Nanotube and Aligned Single-Walled Carbon Nanotube Bulk Structure, and Their Production Process, Production Apparatus and Application Use

This invention provides an aligned single-layer carbon nanotube bulk structure, which comprises an assembly of a plurality of aligned single-layer carbon nanotube and has a height of not less than 10 μm, and an aligned single-layer carbon nanotube bulk structure which comprises an assembly of a plurality of aligned single-layer carbon nanotubes and has been patterned in a predetermined form. This structure is produced by chemical vapor deposition (CVD) of carbon nanotubes in the presence of a metal catalyst in a reaction atmosphere with an oxidizing agent, preferably water, added thereto. An aligned single-layer carbon nanotube bulk structure, which has realized high purify and significantly large scaled length or height, its production process and apparatus, and its applied products are provided.
Owner:NAT INST OF ADVANCED IND SCI & TECH

Method of Growing Uniform Semiconductor Nanowires without Foreign Metal Catalyst and Devices Thereof

Amongst the candidates for very high efficiency solid state lights sources and full solar spectrum solar cells are devices based upon InGaN nanowires. Additionally these nanowires typically require heterostructures, quantum dots, etc which all place requirements for these structures to be grown with relatively few defects. Further manufacturing requirements demand reproducible nanowire diameter, length etc to allow these nanowires to be embedded within device structures. Additionally flexibility according to the device design requires that the nanowire at the substrate may be either InN or GaN. According to the invention a method of growing relatively defect free nanowires and associated structures for group III—nitrides is presented without the requirement for foreign metal catalysts and overcoming the non-uniform growth of prior art non-catalyst growth techniques. The technique also allows for unique dot-within-a-dot nanowire structures.
Owner:MCGILL UNIV
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