2847 results about "Lanthanide" patented technology

A method for forming a metal compound film includes alternate irradiation of an organometal compound and oxygen or nitrogen radicals to deposit monoatomic layers of the metal compound. The organometal compound includes zirconium, hafnium, lanthanide compounds. The resultant film includes little residual carbon and has excellent film characteristic with respect to leakage current.

Phosphor compositions including those having the formulas A2-xEuxW1-yMoyO6, where A is selected from Y, Gd, Lu, La, and combinations thereof; and where 0.5≦x≦1.0, 0.01≦y≦1.0; MmOnX, wherein M is selected from the group of Sc, Y, a lanthanide, an alkali earth metal and mixtures thereof; X is a halogen; 1≦m≦3; and 1≦n≦4, and wherein the lanthanide doping level can range from 0.1 to 40% spectral weight; and Eu3+ activated phosphate or borate phosphors. Also disclosed are light emitting devices including a light source and at least one of the above phosphor compositions.

A method for preparing a functionalized polymer comprising the steps of preparing a pseudo-living polymer by polymerizing conjugated diene monomer with a lanthanide-based catalyst, and reacting the pseudo-living polymer with at least one functionalizing agent defined by the formula (I) where A is a substituent that will undergo an addition reaction with a pseudo-living polymer, R1 is a divalent organic group, R2 is a monovalent organic group, and each R4, which may be the same or different, is a monovalent organic group or a substituent defined by —OR5 where R5 is a monovalent organic group, with the proviso that A, R1, R2, R4, and R5 are substituents that will not protonate a pseudo-living polymer. Also, the functionalized polymer and a vulcanizable composition containing the polymer.

A method for preparing a functionalized polymer comprising the steps of preparing a pseudo-living polymer by polymerizing conjugated diene monomer with a lanthanide-based catalyst, where said pseudo-living polymer is characterized by having greater than about 85 percent of the polymer in the cis microstructure and less than about 3 percent of the polymer is in the 1,2- or 3,4-microstructure, and reacting the pseudo-living polymer with at least one functionalizing agent defined by the formula (I) or (II) where Z is a substituent that will react or interact with organic or inorganic fillers; R1 is a single bond or a divalent organic group; R2 is a monovalent organic group or a divalent organic group that forms a cyclic organic group with R13 or R14; R3 is a single bond, a divalent organic group, or a trivalent organic group that forms a cyclic organic group with R4 or R5; R13 is a single bond, a divalent organic group, or a trivalent organic group that forms a cyclic organic group with R2 or R14; R4 is a monovalent organic group or a divalent organic group that forms a cyclic organic group with R3 or R5; R14 is a monovalent organic group or a divalent organic group that forms a cyclic organic group with R2 or R13; and R5 is a monovalent organic group or a divalent organic group that forms a cyclic organic group with R3 or R4; with the proviso that each group attached to the imino carbon is attached via a carbon atom and R1, R2, R3, R4, R5, R13, R14 and Z are substituents that will not protonate a pseudo-living polymer.

Methods and compositions for depositing a film on one or more substrates include providing a reactor and at least one substrate disposed in the reactor. At least one lanthanide precursor is provided in vapor form and a lanthanide thin film layer is deposited onto the substrate.

A gate structure of a semiconductor device having a NFET and a PFET, includes a lower layer of a hafnium-based dielectric over the gates of the NFET and PFET, and an upper layer of a lanthanide dielectric. The dielectrics are annealed to mix them above the NFET resulting in a lowered work function, and corresponding threshold voltage reduction. An annealed, relatively thick titanium nitride cap over the mixed dielectric above the NFET gate also lowers the work function and threshold voltage. Above the TiN cap and the hafnium-based dielectric over the PFET gate, is another layer of titanium nitride that has not been annealed. A conducting layer of tungsten covers the structure.

A method for preparing a functionalized polymer comprising the steps of preparing a pseudo-living polymer by polymerizing conjugated diene monomer with a lanthanide-based catalyst, and reacting the pseudo-living polymer with at least one functionalizing agent defined by the formula (I) where A is a substituent that will undergo an addition reaction with a pseudo-living polymer, R1 is a divalent organic group, R2 is a monovalent organic group, and each R4, which may be the same or different, is a monovalent organic group or a substituent defined by —OR5 where R5 is a monovalent organic group, with the proviso that A, R1, R2, R4, and R5 are substituents that will not protonate a pseudo-living polymer. Also, the functionalized polymer and a vulcanizable composition containing the polymer.

A method for preparing a functionalized polymer comprising the steps of preparing a pseudo-living polymer by polymerizing conjugated diene monomer with a lanthanide-based catalyst, where said pseudo-living polymer is characterized by having greater than about 85 percent of the polymer in the cis microstructure and less than about 3 percent of the polymer is in the 1,2- or 3,4-microstructure, and reacting the pseudo-living polymer with at least one functionalizing agent defined by the formula (I) or (II) where Z is a substituent that will react or interact with organic or inorganic fillers; R1 is a single bond or a divalent organic group; R2 is a monovalent organic group or a divalent organic group that forms a cyclic organic group with R13 or R14; R3 is a single bond, a divalent organic group, or a trivalent organic group that forms a cyclic organic group with R4 or R5; R13 is a single bond, a divalent organic group, or a trivalent organic group that forms a cyclic organic group with R2 or R14; R4 is a monovalent organic group or a divalent organic group that forms a cyclic organic group with R3 or R5; R14 is a monovalent organic group or a divalent organic group that forms a cyclic organic group with R2 or R13; and R5 is a monovalent organic group or a divalent organic group that forms a cyclic organic group with R3 or R4; with the proviso that each group attached to the imino carbon is attached via a carbon atom and R1, R2 R3, R4, R5, R13, R14 and Z are substituents that will not protonate a pseudo-living polymer.

This invention relates to a method for producing functionalized cis-1,4-polydienes having a combination of a high cis-1,4-linkage content and a high functionality, the resulting polymers and the vulcanized products containing the polymers. The functionalized cis-1,4-polydienes of the present invention are produced by a method comprising the steps of: (1) preparing a reactive polymer by polymerizing conjugated diene monomer with a lanthanide-based catalyst in the presence of less than 20% by weight of organic solvent based on the total weight of monomer, organic solvent, and resulting polymer, where the lanthanide-based catalyst is the combination of or reaction product of (a) a lanthanide compound, (b) an aluminoxane, (c) an organoaluminum compound other than an aluminoxane, and (d) a halogen-containing compound; and (2) contacting the reactive polymer with a functionalizing agent.

The invention provides a laminated dielectric layer for semiconductor devices formed by a combination of ZrO2 and a lanthanide oxide on a semiconductor substrate and methods of making the same. In certain methods, the ZrO2 is deposited by multiple cycles of reaction sequence atomic layer deposition (RS-ALD) that includes depositing a ZrI4 precursor onto the surface of the substrate in a first pulse followed by exposure to H2O / H2O2 in a second pulse, thereby forming a thin ZrO2 layer on the surface. After depositing the ZrO2 layer, the lanthanide oxide layer is deposited by electron beam evaporation. The composite laminate zirconium oxide / lanthanide oxide dielectric layer has a relatively high dielectric constant and can be formed in layers of nanometer dimensions. It is useful for a variety of semiconductor applications, particularly for DRAM gate dielectric layers and DRAM capacitors.

A method for preparing a functionalized polymer, the method comprising the steps of (i) polymerizing conjugated diene monomer by employing a lanthanide-based catalyst to form a reactive polymer, and (ii) reacting the reactive polymer with a nitro compound.

A continuous process for producing conjugated diene polymers comprising the steps of contacting, within an hydrocarbon solvent and within a continuous reactor, conjugated diene monomer and a catalyst composition prepared by combining: (a) a lanthanide compound, (b) an alkylating agent, and (c) a halogen-containing compound, and maintaining a non-ideal flow pattern within the continuous reactor so that 10% of the reagents entering the reactor at a reference time t0 are still present within the continuous reactor at a time t0+xtrt, where trt is the residence time corresponding to ideal flow within the continuous reactor and x is a numeral greater than 1.5.

A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, or wherein M is Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, or Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from H, aryl, perfluoroaryl, C1-C8 alkyl, C1-C8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSiAy(NR1R2)4-x-y or wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, and C1-C8 perfluoroalkyl; and n is from 1-6. By comparison with the standard SiO2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.

A method of growing single-crystals of a cubic (zinc blende) form of gallium nitride, the method comprising the steps of: placing into a reaction tube or acid resistant vessel a gallium source, anhydrous ammonia, an acid mineralizer and a metal halide salt selected from the group consisting of alkali metal halides, copper halides, tin halides, lanthanide halides and combinations thereof; closing said reaction tube or vessel; heating said reaction tube; cooling said reaction tube or vessel; and collecting single-crystals of cubic (zinc blende) form of GaN; wherein said reaction tube or vessel has a temperature gradient with a hot zone of at least 250° C., wherein said reaction tube or vessel has a temperature gradient with a cool zone of at least 150° C., and wherein said acid mineralizer has a sufficient concentration to permit chemical transport of GaN in said reaction tube or vessel from said hot zone to said cool zone due to said temperature gradient within said reaction tube or vessel.

Optimal structures for high efficiency thin film silicon solar energy conversion devices and systems are disclosed. Thin film silicon active layer photoelectron conversion structures using ion implantation are disclosed. Thin film semiconductor devices optimized for exploiting the high energy and ultraviolet portion of the solar spectrum at the earths surface are also disclosed. Solar cell fabrication using high oxygen concentration single crystal silicon substrates formed using in preference the CZ method are used advantageously. Furthermore, the present invention discloses optical coatings for advantageous coupling of solar radiation into thin film solar cell devices via the use of rare-earth metal oxide (REOx), rare-earth metal oxynitride (REOxNy) and rare-earth metal oxy-phosphide (REOxPy) glasses and or crystalline material. The rare-earth metal is chosen from the group commonly known in the periodic table of elements as the lanthanide series.

Scintillator materials based on certain types of halide-lanthanide matrix materials are described. In one embodiment, the matrix material contains a mixture of lanthanide halides, i.e., a solid solution of at least two of the halides, such as lanthanum chloride and lanthanum bromide. In another embodiment, the matrix material is based on lanthanum iodide alone, which must be substantially free of lanthanum oxyiodide. The scintillator materials, which can be in monocrystalline or polycrystalline form, also include an activator for the matrix material, e.g., cerium. Radiation detectors that use the scintillators are also described, as are related methods for detecting high-energy radiation.

Phosphor compositions having the formulas (Tb1-x-y-z-wYxGdyLuzCew)3MrAls-rO12+δ, where M is selected from Sc, In, Ga, Zn, or Mg, and where 0<w≦0.3, 0≦x≦1, 0≦y≦0.4, 0≦z<1, 0≦r≦4.5, 4.5≦s≦6, and −1.5≦δ≦1.5; (RE1-xScxCey)2A3-pBpSiz-qGeqO12+δ, where RE is selected from a lanthanide ion or Y3+, A is selected from Mg, Ca, Sr, or Ba, B is selected from Mg and Zn, and where 0≦p≦3, 0≦q≦3, 2.5≦z≦3.5, 0≦x≦1, 0≦y≦0.3, −1.5≦δ≦1.5; and (Ca1-x-y-zSrxBayCez)3(Sc1-a-bLuaDc)2Sin-wGewO12+δ, where D is either Mg or Zn, 0≦x≦1, 0≦y<1, 0<z≦0.3, 0≦a<1, 0≦c≦1, 0≦w≦3, 2.5≦n≦3.5, and −1.5≦δ≦1.5. Also disclosed are light emitting devices including a light source and at least one of the above phosphor compositions.

Perovskite-type catalyst consists essentially of a metal oxide composition is provided. The metal oxide composition is represented by the general formula A.sub.1-x B.sub.x MO.sub.3, in which A is a mixture of elements originally in the form of single phase mixed lanthanides collected from bastnasite; B is a divalent or monovalent cation; M is at least one element selected from the group consisting of elements of an atomic number of from 22 to 30, 40 to 51, and 73 to 80; and x is a number defined by 0.ltoreq.x<0.5.

Disclosed is a titanium carbonitride based metal ceramic material based on a high-entropy alloy binder phase. The binder phase of the titanium carbonitride based metal ceramic material is high-entropy alloy, the hard phase of the titanium carbonitride based metal ceramic material is carbonitride solid solution, the high-entropy alloy binder phase includes at least four of ferrum, cobalt, nickel, chromium, aluminum, vanadium, titanium, copper, zirconium, molybdenum, manganese and rare earth elements, and the molar content ratio of each element ranges from 5% to 35%. In a preparation method, the titanium carbonitride based metal ceramic material based on the high-entropy alloy binder phase comprises raw materials including, in weight percent, 3-30% of the high-entropy alloy binder phase, 0-30% of second carbide powder and the balance carbonitride solid solution powder, the carbonitride solid solution powder includes at least one of Ti (Cx, N1-x), (Ti, M1...) and (Cx, N1-x), the M1 component of the (Ti, M1...) and (Cx, N1-x) includes at least one of W, Mo, Ta, Nb, V, Cr, Zr, Hf, Y and lanthanide, and 0<x<1 in the Ti (Cx, N1-x), (Ti, M1...) and (Cx, N1-x). The preparation method includes the process steps of (1) ball-milling mixing, (2) forming and (3) low-pressure sintering.

A catalyzed diesel particulate filter (CDPF) and a method for filtering particulates from diesel engine exhaust are provided, where the catalyzed diesel particulate filter includes a substrate and a catalyst composition, where the catalyst composition contains at least one first component, at least one second component, and at least one third component, where the first component is at least one first component selected from the group consisting of cerium and a lanthanide and mixtures thereof, the at least one second component is selected from the group consisting of cobalt, copper, manganese and mixtures thereof; and the third component comprises strontium, where the first component, the second component, and the third component are in an oxide form after calcination. The catalyst on the catalyzed diesel particulate filter lowers the temperature at which particulates are removed from the CDPF by oxidizing the particulates on the filter. The catalyzed diesel particulate filter may also include a washcoat. Washcoats prepared from colloidal aluminum oxide may have higher surface areas and pore volumes loadings than washcoats containing aluminum oxide prepared from aluminum nitrate.

One aspect of the present invention relates to a microsphere, comprising a hydrophilic polymer comprising a plurality of pendant anionic groups; a transition-metal, lanthanide or group 13-14 metal oxide, polyoxometalate or metal hydroxide or combination thereof; and a first radioisotope that emits a therapeutic β-particle. In certain embodiments, the microsphere further comprsies a second radioisotope that emits a diagnostic γ-ray; wherein the atomic number of the first radioisotope is not the same as the atomic number of the second radioisotope. In certain embodiments, the microsphere is composed of polymer impregnated with zirconia bound to 32p as the source of the therapeutic β-emissions and 67Ga as the source of the diagnostic γ-emissions. Another aspect of the present invention relates to the preparation of a microsphere impregnated with a radioisotope that emits therapeutic β-particles and a radioisotope that emits diagnostic β-emitting radioisotope and a γ-emitting radioistope; wherein the atomic number of the first radioisotope is not the same as the atomic number of the second radioisotope. In certain embodiments, said microspheres are administered to the patient through a catheter. In another embodiment, the microsphere is combined with the radioisotopes at the site of treatment.

A thermoelectric composition comprises a material represented by the general formula (AgaX1−a)1±x(SnbPb1−b)mM′1−yQ2+m wherein X is Na, K, or a combination of Na and K in any proportion; M′ is a trivalent element selected from the group consisting of Sb, Bi, lanthanide elements, and combinations thereof; Q is a chalcogenide element selected from the group consisting of S, Te, Se, and combinations thereof; a and b are independently >0 and ≦1; x and y are independently >0 and <1; and 2≦m≦30. The compositions exhibit a figure of merit ZT of up to about 1.4 or higher, and are useful as p-type semiconductors in thermoelectric devices.