323results about How to "Lower work function" patented technology

A process for producing metal nitride thin films comprising doping the metal nitride thin films by atomic layer deposition (ALD) with silicon or boron or a combination thereof. The work function of metal nitride thin films, which are used in metal electrode applications, can efficiently be tuned.

A visible and infrared light powered retinal implant is disclosed that is implanted into the subretinal space for electrically inducing formed vision in the eye. The retinal implant includes a stacked microphotodetector arrangement having an image sensing pixel layer and a voltage and current gain adjustment layer for providing variable voltage and current gain to the implant so as to obtain better low light implant performance than the prior art, and to compensate for high retinal stimulation thresholds present in some retinal diseases. A first light filter is positioned on one of the microphotodetectors in each of the image sensing pixels of the implant, and a second light filter is positioned on the other of the microphotodetectors in the image sensing pixel of the implant, each of the microphotodetectors of the pixel to respond to a different wavelength of light to produce a sensation of darkness utilizing the first wavelength, and a sensation of light using the second wavelength, and a third light filter is positioned on a portion of the voltage and current gain adjustment layer that is exposed to light, to allow adjustment of the implant voltage and current gain of the device by use of a third wavelength of light.

An organic compound film is composed of a hole transporting region, a first mixed region, a light emitting region, a second mixed region, and an electron transporting region that are connected to one another. With the organic compound film thus structured, the blue organic light emitting device obtained is free from interfaces between layers which are present in the conventional laminate structure. When pigment doping is added to this device structure, a white organic light emitting device is obtained. A blue or white organic light emitting device having high light emission efficiency and long lifetime is provided by this method. When this organic light emitting device is combined with color conversion layers or color filters, a full color display device that consumes less power and lasts long can be obtained.

Apparatus and methods for providing displays based upon the principle of photoluminescent quenching are described. The invention includes a method of displaying information using photoluminescence quenching, the method comprising providing an optoelectronic display comprising a photoluminescent material between a pair of electrodes, providing illumination for the photoluminescent material to cause the photoluminescent material to photoluminescence, and biasing the electrodes to at least partially quench the photoluminescence.

The present invention provides a solid-state energy storage device having at least one quantum confinement species (QCS), where the QCS can include a quantum dot (QD), quantum well, or nanowire. The invention further includes at least one layer of a dielectric material with at least one QCS incorporated there to, and a first conductive electrode disposed on a top surface of the at least one layer of the dielectric material, and a second conductive electrode is disposed on a bottom surface of the at least one layer of dielectric material, where the first electrode and the second electrode are disposed to transfer a charge to the at least one QCS, where when an electrical circuit is disposed to provide an electric potential across the first electrode and the second electrode, the electric potential discharges the transferred charge from the at least one QCS to the electrical circuit.

A lower electrode (2) and surface electrode (7) composed of a layer-structured conductive carbide layer is formed on one principal surface side of the substrate (1) composed of an insulative substrate such as a glass or ceramic substrate. A non-doped polycrystalline silicon layer (3) is formed on the lower electrode (2), An electron transit layer (6) composed of an oxidized porous polycrystalline silicon is formed on the polycrystalline silicon layer (3). The electron transit layer (6) is composed of a composite nanocrystal layer including polycrystalline silicon and many nanocrystalline silicons residing adjacent to a grain boundary of the polycrystalline silicon. When voltage is applied between the lower electrode (2) and the surface electrode (7) such that the surface electrode (7) has a higher potential, electrons are injected from the lower electrode (2) toward the surface electrode (7), and emitted through the surface electrode (7) through the electron transit layer (6).

A method of manufacturing a triode field emission cold cathode device having randomly distributed field emission emitters comprising the steps of providing a substrate (10), depositing a first conductive layer (11) on the substrate, spraying the preceding layer with a random pattern of masking material (20), depositing an insulating layer (13) on the masked preceding layer, depositing a second conductive layer (14) on the insulting layer, and removing the masking material. A triode field emission cold cathode device having randomly distributed field emission emitters is also provided.

An organic light emitting display and a method of fabricating the same, and more particularly, an organic light emitting display in which the surface of a substrate contacted to a frit is made non-planar to improve an adhesive force and a method of fabricating the same are disclosed. The organic light emitting display includes a first substrate including a pixel region in which at least one organic light emitting diode (OLED) is formed and a non-pixel region formed on the outer circumference of the pixel region so that one region of the non-pixel region is made with one or more non-planar structures, a second substrate attached to the first substrate so that the OLED is encapsulated with a frit interposed between the first substrate and the second substrate and contacted to the non-planar structures.

A disposable gate structure and a gate spacer are formed on a semiconductor substrate. A disposable gate material portion is removed and a high dielectric constant (high-k) gate dielectric layer and a metal nitride layer are formed in a gate cavity and over a planarization dielectric layer. The exposed surface portion of the metal nitride layer is converted into a metal oxynitride by a surface oxidation process that employs exposure to ozonated water or an oxidant-including solution. A conductive gate fill material is deposited in the gate cavity and planarized to provide a metal gate structure. Oxygen in the metal oxynitride diffuses, during a subsequent anneal process, into a high-k gate dielectric underneath to lower and stabilize the work function of the metal gate without significant change in the effective oxide thickness (EOT) of the high-k gate dielectric.

A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor.

A non-volatile memory device having a control gate on top of the second dielectric (interpoly or blocking dielectric), at least a bottom layer of the control gate in contact with the second dielectric being constructed in a material having a predefined high work-function and showing a tendency to reduce its work-function when in contact with a group of certain high-k materials after full device fabrication. At least a top layer of the second dielectric, separating the bottom layer of the control gate from the rest of the second dielectric, is constructed in a predetermined high-k material, chosen outside the group for avoiding a reduction in the work-function of the material of the bottom layer of the control gate. In the manufacturing method, the top layer is created in the second dielectric before applying the control gate.

An energy generation system and method are presented for use in operating a heat engine. The energy generation method comprises: reducing a CO₂ gas into CO and O₂ gases; reacting said CO and O₂ gases, thus combusting the CO gas, and yielding a substantially pure CO₂ outlet gas; and supplying said CO₂ outlet gas to the heat engine as a working gas in its heat-to-work generation process.

Field emission properties may also be improved by coating the carbon materials with metal oxides. These metal oxides contribute to lowering the work function of the carbon material as well as improve the life of the field emission properties of the carbon materials, especially under high current density operation.

In a p channel MOS transistor and an n channel MOS transistor each having a gate electrode made of metal on a gate insulating film made of oxide whose relative dielectric constant is higher than that of silicon oxide, threshold voltage thereof is reduced. A gate insulating film of a p channel MOS transistor and an n channel MOS transistor is made of hafnium oxide, a gate electrode of the p channel MOS transistor is made of ruthenium, and a gate electrode of the n channel MOS transistor is made of alloy containing ruthenium as a base material and hafnium.

A semiconductor MOS device includes a semiconductor substrate; a gate oxide layer disposed on the semiconductor substrate; a fully silicided gate electrode disposed on the gate oxide layer; a composite thin film interposed between the fully silicided gate electrode and the gate oxide layer; a spacer on sidewall of the fully silicided gate electrode; and a source/drain region implanted into the semiconductor substrate next to the spacer. A method for forming the semiconductor MOS device is disclosed.

A UV-LED photoemission ionization source and process are disclosed that provide ionization of analytes including volatile molecular species and organic residues for detection with various ion analyzers. The UV-LED source produces low-energy UV light (200 nm to 400 nm) that yields photoemission electrons from various conducting surfaces. These photoemission electrons provide direct and indirect ionization of analytes including trace organic residues without need of high electric fields.