100results about How to "Improve light emission efficiency" patented technology

The present invention provides a stable new condensed polycyclic compound which is not likely to form a molecular association. In addition, the present invention also provides an organic light-emitting element having a high light-emitting efficiency and a low drive voltage. In the condensed polycyclic compound in Claim 1 represented by the general formula [1], R1, R2 and R5 are each independently selected from a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an aryl group, and a heterocyclic group. R3 and R4 each represent an alkyl group having 1 to 4 carbon atoms. The aryl group and the heterocyclic group each may have at least one of an alkyl group, an aralkyl group, an aryl group, a heterocyclic group, an amino group, and an alkoxy group as a substituent.

A light emitting device includes a nitride semiconductor substrate with a resistivity of 0.5 Ω·cm or less, an n-type nitride semiconductor layer and a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at a first main surface side of the nitride semiconductor substrate, and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, wherein one of the nitride semiconductor substrate and the p-type nitride semiconductor layer is mounted at the top side which emits light and the other is placed at the down side, and a single electrode is placed at the top side. Therefore, there is provided a light emitting device which has a simple configuration thereby making it easy to fabricate, can provide a high light emission efficiency for a long time period, and can be easily miniaturized.

The present invention provides an organic electroluminescence device including an organic layer comprising an emissive layer; a pair of electrodes comprising an anode and a cathode, and sandwiching the organic layer, wherein at least one of the electrodes is transparent; a transparent layer provided adjacent to a light extracting surface of the transparent electrode; and a region substantially disturbing reflection and retraction angle of light provided adjacent to a light extracting surface of the transparent layer or in an interior of the transparent layer, wherein the transparent layer has a refractive index substantially equal to or more than the refractive index of the emissive layer.

A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located over at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, a frame located on the base board, the chip mounted on the base board, a transparent material layer located between the wavelength converting layer and a side surface of the chip so as to extend toward the wavelength converting layer, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the transparent material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency of the chip by using the reflective material layer as a reflector, and therefore can emit a wavelength-converted light having a high light-emitting efficiency from a small light-emitting surface.

A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer in order to emit various colored lights including white light. The device can include a board, a frame located on the board, at least one light-emitting chip mounted on the board, the wavelength converting layer located between an optical plate and an outside surface of the chips so that a density of a peripheral region is lower than that of a middle region, and a reflective material layer disposed at least between the frame and a side surface of the wavelength-converting layer. The device can have the reflective material layer form each reflector and can use a wavelength converting layer having different densities, and therefore can emit a wavelength-converted light having a high light-emitting efficiency and a uniform color tone from various small light-emitting surfaces.

An LED chap lamp apparatus has a heat sink with a reflector, an LED lamp module and a heat pipe. The LED lamp module is assembled on an inside of the reflector for reflecting light of the LED lamp module. The two ends of the heat pipe each connect to the LED lamp module and the heat sink to conduct and disperse the heat produced form the LED chips to increase the lifetime and the light-emitting efficiency of the LED chap lamp apparatus.

Conventional light emitting diode designs combined with blue light emitting diodes tend to lack in decorativeness and warmness. The present invention aims at providing a white light emitting diode for emitting white light with warmness at a higher luminance, and an intermediate color light emitting diode satisfying light emission in diversified color tones at a higher luminance. The solving means resides in adoption of a fluorescent material which is configured to emit yellowish red or red light and which comprises a CaAlSiN3 crystal phase including, dissolved therein in a solid state, one kind or two or more kinds of element(s) selected from Mn, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, in a manner that the fluorescent material is mixed with another fluorescent material configured to emit green, yellowish green, or yellow light, and that the mixedly obtained phosphor is combined with a semiconductor light emitting element configured to emit bluish purple or blue light, to thereby fabricate a white light emitting diode for emitting white light with warmness at a high efficiency.

A method for making a light-emitting diode, which including the steps of: providing a substrate having at least one recessed portion on one main surface and growing a first nitride-based III-V group compound semiconductor layer through a state of making a triangle in section having a bottom surface of the recessed portion as a base thereby burying the recessed portion; laterally growing a second nitride-based III-V group compound semiconductor layer from the first nitride-based III-V group compound semiconductor layer over the substrate; and successively growing a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type on the second nitride-based III-V group compound semiconductor layer.

A vertical organic thin film transistor is provided along with an organic light-emitting transistor, which is characterized in that an active layer is formed of a p-type organic semiconductor compound having a dielectric constant of 3.5 or more, and work function values of an anode and a cathode are different from each other. The vertical organic thin film transistor is advantageous because it exhibits excellent current-voltage properties due to a short channel length, and has simple fabrication processes. Also, in the vertical organic thin film transistor, current properties in response to the gate voltage are of an enhancement type. Therefore, the vertical organic thin film transistor may be fabricated into the organic light-emitting transistor through a simple process.

An object of the present invention is to provide a nano-particle light emitting material having a specific ligand and an electric field light emitting diode having high light emitting efficiency. The nano-particle light emitting material includes: a core portion formed of a nano-particle; and a shell portion formed of at least two kinds of ligands localized on a surface of the core portion, in which at least one kind of the ligands includes a hole transportable ligand, and at least one kind of the ligands includes an electron transportable ligand.

The present invention discloses a high CRI white LED and a lamp comprising the white LED. The white LED includes a base, a reflector for mixing light, protrusions on the inner wall surface of the reflector, at least 6 LED chips emitting lights at different wavelengths, which are fixed and electrically combined on the heat conducting base, and a lead frame which has a shape and a size matched well with the bottom of the reflector and which is fixed outside the reflector and on the top surface of the base. Electrodes of the LED chips are electrically connected with leads on the lead frame. A transparent optical material covers the chips. The multi-wavelengths lights are mixed uniformly by diffuse reflection of the reflecting walls of the reflector to achieve a white LED with high CRI and high efficiency. A white LED lamp or a white LED plane light source comprising the white LED can avoid energy loss in optical conversion in which phosphors are used. With the configuration, the efficiency in electro-to-optic conversion and working lifetime of the lamps are improved. The lamp is also suitable for mass production.

An object of the present invention is to provide a film forming method for forming a film with reduced defect and to provide a film forming method for forming a film with a uniform quality. In addition, another object is to provide a manufacturing method of a light emitting element which can be driven with low voltage. Further, another object is to provide a manufacturing method of a light emitting element with high light emission efficiency. A film with reduced defect and a uniform quality can be formed by fixing a substrate to a substrate holding unit so that at least a part of a surface of the substrate is exposed, evaporating a vapor deposition material from an evaporation source filled with the vapor deposition material, irradiating the vapor deposition material which is evaporated with a laser beam, and depositing the vapor deposition material on the surface of the substrate.

An LED package having an anodized insulation layer which increases heat radiation effect to prolong the lifetime LEDs and maintains high luminance and high output, and a method therefor. The LED package includes an Al substrate having a reflecting region and a light source mounted on the substrate and connected to patterned electrodes. The package also includes an anodized insulation layer formed between the patterned electrodes and the substrate and a lens covering over the light source of the substrate. The Al substrate provides superior heat radiation effect of the LED, thereby significantly increasing the lifetime and light emission efficiency of the LED.

An oxadiazole derivative represented by the following general formula (G1) is synthesized and applied to the light emitting element, wherein Am is a substituent represented by a general formula (Am1), (Am2), or (Am3); each of α, β1, and β2 represents an arylene group having 6 to 25 carbon atoms; each of Ar1 to Ar6 represents an aryl group having 6 to 25 carbon atoms; each of R1 to R3 represents hydrogen, an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 25 carbon atoms; and R4 represents an alkyl group having 1 to 4 carbon atoms or an aryl group having 6 to 25 carbon atoms.

A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer in order to emit various colored lights including white light. The semiconductor light-emitting device can include a base board, a frame located on the base board, at least one light-emitting chip mounted on the base board, the wavelength converting layer located between an optical plate and each outside surface of the chips so as to extend toward the optical plate using a meniscus control structure, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the optical plate. The semiconductor light-emitting device can be configured to improve light-emitting efficiency and color variability between the light-emitting chips by using the reflective material layer as each reflector, and therefore can emit a wavelength-converted light having a high light-emitting efficiency from various small light-emitting surfaces.

An organic electroluminescent element in which at least one organic layer including a light emitting layer is sandwiched between an anode and a cathode,wherein the at least one organic layer includes an iridium complex compound represented by a following general formula (1).

A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method comprises the steps of: sequentially forming a refraction dielectric layer, a bonding layer, an epitaxy structure and a first electrode on a permanent substrate, wherein the epitaxy structure comprises a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer stacked in sequence; and forming a second electrode on the portion surface of the second conductivity type semiconductor layer. Therefore the light-emitting diode is achieved.

Disclosed is an electroluminescence element, wherein at least a first electrode, a light-emitting layer, and a second electrode may be laminated on a substrate in said order. In said element, the light-emitting layer may contain quantum dots, and an intermediate layer formed from a polymer containing nitrogen atoms may be formed between the first electrode and the light-emitting layer.

A main object of the present invention is to provide: fine particles whose excitation light is not the one such as UV light or the like which has negative effects on a subject to be analyzed, emit light stably, and has excellent light emitting efficiency, and a fluorescent probe labeled with the fine particles. In order to achieve the aforementioned object, the present invention provides a fluorescent probe comprising: fine particles containing a rare earth element characterized in that they are excited by light having a wavelength in a range of 500 nm to 2000 nm and thereby emit up-conversion emission; and a specific binding substance which binds to the fine particles containing a rare earth element.

An organic light emitting device includes a first electrode; a second electrode; an emissive layer disposed between the first electrode and the second electrode; a first hole injection layer disposed between the first electrode and the emissive layer; and a first electron transport layer disposed between the emissive layer and the second electrode. The hole injection layer includes a hole injecting material and a first compound made up of an element selected from the group consisting of Mo, Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, and B and an element selected from the group consisting of O, F, S, Cl, Se, Br, and I. The electron transport layer comprises an electron transporting material and a second compound, which is Li2O, MoO3, BaO, or B2O3.

For realizing an organic luminescence device of a high efficiency, the present invention provides an organic luminescence device having an anti-reflection film on a transparent electrode or on a moisture prevention layer.

Disclosed is an organic electroluminescent element having high luminous efficiency and long life. Also disclosed are a display device and an illuminating device respectively using such an organic electroluminescent element. Specifically disclosed is an organic electroluminescent element comprising an electrode and at least one or more organic layers on a substrate. This organic electroluminescent element is characterized in that at least one of the organic layers is a light-emitting layer containing a phosphorescent compound and a host compound, the phosphorescent compound has a HOMO of −5.15 to −3.50 eV and a LUMO of from −1.25 to +1.00 eV, and the host compound has a 0-0 band of the phosphorescence spectrum at not more than 460 nm and a glass transition temperature of not less than 60° C.

There is provided a light emitting module including: a circuit board; at least one light source part disposed on the circuit board; a wavelength conversion part coupled with the circuit board, the wavelength conversion part covering alight emitting surface of the light source part and converting a wavelength of light; and a coupling part coupling the wavelength conversion part to the circuit board.

An organic light emitting diode device includes an organic layer formed of a hole transport material or a hole injection material having a photocurable group. Therefore, the organic light emitting diode device can be formed using a wet process that is simple and can be used for a large substrate. Furthermore, the organic layer and an organic light emitting layer are less affected by a solvent,. Thus, the lifespan of the organic light emitting diode device is increased and there is more freedom in selecting materials for the organic layer and the organic light emitting layer. A method of manufacturing the organic light emitting diode device is also disclosed.

The present disclosure provides various embodiments of light emitting chips and packages with improved current spreading structures, such as non-uniform via structures or varied via structures. In some embodiments, these structures may be used to regulate current flow and current crowding in order to improve emitter efficiency and uniformity. Some embodiments of this disclosure may also refer to contact pad placement to improve current flow. In some embodiments of non-uniform via structures, the size of the vias may vary, whereas in other embodiments, the shape or spacing between the vias may vary.

A projection display apparatus 100 including a plurality of solid state light sources 11 includes: a sensor 70 detecting an amount of light emitted from the plurality of solid state light sources 11; a degradation rate calculating unit 250 acquiring, from the amount of light detected by the sensor 70, an amount of light emitted from a measurement target light source which is any one of the plurality of solid state light sources: and a light source controlling unit 240 controlling, for each of the plurality of state light sources 11, emission periods in which the plurality of solid state light sources 11 emit light so that the degradation rate calculating unit 250 acquires the amount of light emitted from the measurement target light

The invention discloses a silicon-based light-emitting device and a preparation method thereof. The device includes a silicon substrate, the front of the substrate is etched to form a nano-column photonic crystal array, and a film layer containing a silicon nanocrystal quantum dot structure is conformally deposited on the array, and the film layer is covered with a transparent conformal electrode. Ohmic contact electrodes are deposited on the bottom and back; the method is as follows: using microsphere mask etching technology on the front of the substrate to obtain a silicon nanocolumn photonic crystal array through deep reactive ion etching, and then co-existing on the silicon nanocolumn photonic crystal array. Formally grow a thin film layer containing a nano-silicon quantum dot structure and a transparent conformal electrode, and deposit an ohmic contact electrode on the back of the substrate to obtain the target product. The silicon-based light-emitting device of the present invention adopts photonic crystal nano-column array and silicon nano-crystal quantum dot structure at the same time, which effectively improves the light extraction efficiency and carrier injection efficiency, thereby improving the luminous intensity and light emission efficiency of the device, and the device structure is simple, The process is simple and the cost is low.

A carbazole derivative represented by the following General Formula (1) where at least one aromatic ring has one to three substituents each represented by the following General Formula (2):in General Formula (1), Ar1 and Ar2 each independently represent a substituted or unsubstituted aryl group which may form a ring with a benzene ring, a substituted or unsubstituted heterocyclic group, a substituted or unsubstituted arylsilyl group, or a hydrogen atom, and Ar3 represents a substituted or unsubstituted aryl group,—X—Y—Z  (2)in General Formula (2), X represents a methylene group, a carbonyloxy group, an oxycarbonyl group, a carbonyl group, an oxygen atom or a sulfur atom, Y represents a substituted or unsubstituted alkylene group, and Z represents a carboxyl group, a hydroxyl group or a thiol group.

A light emitting diode (LED) substrate including a sapphire substrate is provided. The sapphire substrate has a surface consisting of a plurality of upper trigonal and lower hexagonal tapers, wherein each of the upper trigonal and lower hexagonal tapers is consisted of a hexagonal taper and a trigonal taper on the hexagonal taper, and a pitch of the upper trigonal and lower hexagonal tapers is less than 10 μm. This LED substrate has high light-emitting efficiency.

An organic EL display includes: lower electrodes arranged on a substrate so as to correspond to red, green and blue organic EL elements, respectively; hole injection / transport layers arranged on the lower electrodes so as to correspond to the red, green and blue organic EL elements, respectively, the hole injection / transport layers having one or both of hole injection and hole transport properties; red and green organic light-emitting layers arranged on the hole injection / transport layers for the red and green organic EL elements, respectively, and including a low-molecular material; a blue organic light-emitting layer arranged on whole surfaces of the red and green organic light-emitting layers and the hole injection / transport layer for the blue organic EL element; and an electron injection / transport layer and an upper electrode arranged on a whole surface of the blue light-emitting layer, the electron injection / transport layer having one or both of electron injection properties and electron transport properties.