Silicon-based light-emitting device and preparation method thereof

Abstract

The invention discloses a silicon-based light-emitting device and a preparation method thereof. The device includes a silicon substrate, the front of the substrate is etched to form a nano-column photonic crystal array, and a film layer containing a silicon nanocrystal quantum dot structure is conformally deposited on the array, and the film layer is covered with a transparent conformal electrode. Ohmic contact electrodes are deposited on the bottom and back; the method is as follows: using microsphere mask etching technology on the front of the substrate to obtain a silicon nanocolumn photonic crystal array through deep reactive ion etching, and then co-existing on the silicon nanocolumn photonic crystal array. Formally grow a thin film layer containing a nano-silicon quantum dot structure and a transparent conformal electrode, and deposit an ohmic contact electrode on the back of the substrate to obtain the target product. The silicon-based light-emitting device of the present invention adopts photonic crystal nano-column array and silicon nano-crystal quantum dot structure at the same time, which effectively improves the light extraction efficiency and carrier injection efficiency, thereby improving the luminous intensity and light emission efficiency of the device, and the device structure is simple, The process is simple and the cost is low.

Description

technical field [0001] The invention particularly relates to a silicon-based light-emitting device and a preparation method thereof, belonging to the technical field of semiconductor optoelectronic devices. Background technique [0002] The realization of optical gain and even lasing in silicon materials has always been a goal that the microelectronics industry has been paying close attention to and trying to achieve. From the silicon laser developed by Intel Corporation using the Raman effect to the lasing behavior observed by Brown University on the introduction of A-center defects on SOI chips, many scientific research institutions are committed to the research of silicon-based light sources and lasers. However, due to the indirect bandgap structure of the silicon material itself, its luminous efficiency is still relatively low. Most of the current semiconductor light-emitting devices are made of non-silicon-based materials, which are not compatible with the current matu...

AI Technical Summary

Problems solved by technology

The invention patent intends to enhance the field emission effect with the rough surface of silicon cones in an array, but because the etching resistance of polystyrene microspheres is not strong, and plasma etching is used, the length of the obtained silicon cones is very large. Limitation, the lateral scattering of light cannot be well restricted, so that the injection efficiency of carriers and the light extraction efficiency of the device still need to be improved

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