3812results about How to "Improve light extraction efficiency" patented technology

A light emitting unit has a chamber. The light emitting unit includes at least one substrate, a plurality of light emitting diode (LED) dies and a gel or a fluid. The LED dies are disposed on the substrate and in the chamber. At least two LED dies are electrically connected to each other in series or in parallel. The gel or the fluid is filled in the chamber.

The invention provides a method for separating semiconductor light-emitting devices formed on a substrate. In the method, a pulse laser beam having a pulse width less than 10 ps in a substrate is focused on the substrate, to thereby cause multi-photon absorption in the substrate. Through multi-photon absorption, a groove is formed through the pulse laser beam along a split line predetermined on a surface of the substrate, the groove being substantially continuous in the direction of the predetermined split line. In addition, internal structurally changed portions are formed through the pulse laser beam at a predetermined depth of the substrate on a predetermined split face, the structurally changed portions being discontinuous in the direction of the predetermined split line. Subsequently, an external force is applied to thereby form a split face along the continuous groove and the discontinuous internal structurally changed portions, whereby the semiconductor light-emitting devices are separated from one another

The invention discloses an LED (Light Emitting Diode) lamp tube, which comprises a glass tube, lamp caps arranged at two ends of the glass tube as well as an LED lamp strip arranged in the glass tube, wherein the inner wall of the glass tube is coated with a light increasing and heat radiating film; and the LED lamp strip is fixedly adhered to the inner wall of the glass tube through a high heat conduction bonding adhesive. The light increasing and heat radiating film is an aluminum-coated layer, or a frosted heat conduction light increasing adhesive layer or a nano adhesive layer capable of increasing light and radiating heat. The LED lamp strip comprises a substrate, wherein a plurality of LED light sources are welded on the substrate, or an integrated light source consisting of an LED chip is packaged on the substrate; and a driving power supply module is also arranged on the LED lamp strip. According to the LED lamp tube disclosed by the invention, the light emitting efficiency, the light emitting angle and the illumination area of the LED lamp tube are increased; the problems of glare and point light existing in the LED lamp tube are solved; heat generated by an LED is transmitted to the whole glass tube through the substrate of the LED, so that the heat radiating area is greatly increased and the heat increasing speed of the LED lamp tube is increased; the LED lamp tube can be applied to a lamp holder of a traditional fluorescent lamp, and thus the generality of the LED lamp tube is greatly improved; and the replacement and use costs are reduced.

An organic EL device (1) comprises: a light-transmissive substrate (2); a transparent electrode (4); an organic emitting layer (5); and an opposing electrode (6). A light-extraction layer (3) provided by layering a high refractive index layer (31) adjoining the transparent electrode (4) and a low refractive index layer (32) adjoining the light-transmissive substrate (2) includes recess-protrusion units (31A) each provided by a protrusion (311) and a recess (312) at an interface between the high refractive index layer (31) and the low refractive index layer (32). In at least one of the recess-protrusion units (31A), a distance d₁ from the interface between the high refractive index layer (31) and the low refractive index layer (32) to an interface between the transparent electrode (4) and the high refractive index layer (31) is equal to or more than an optical coherence length and a height d₂ of the protrusion (311), a width d₃ of the protrusion (311) and a gap d4 between the protrusion (311) and another protrusion (311) adjoining the protrusion across the recess (312) is 1 μm or more.

An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed terminal structure with the first terminal, which can be formed in a variety of patterns.

The invention relates to the field of LED lighting, and particularly provides an LED lighting device. The LED lighting device comprises a transparent outer shell, an LED luminescent device and a support, wherein the transparent outer shell and the support form a closed cavity and the LED luminescent device is located inside the cavity and fixed onto the support. The LED lighting device is characterized in that the cavity is filled with inert gas which is used for transmitting heat generated by the LED luminescent device to the outer portion of the transparent outer shell. According to the LED lighting device, through the inert gas arranged in the cavity in a filled mode, the heat generated by the LED luminescent device can be transmitted to the outer portion of the LED lighting device without adopting a heat dissipation body, and therefore the shape, the size and the weight of the LED lighting device cannot be limited by the heat dissipating body. Thus, the attractiveness, the safety and the installation convenience of the LED lighting device can be improved.

The invention provides an LED (Light Emitting Diode) lamp filament and a manufacturing method thereof. An LED chip is encapsulated on the edge top surface of a thin and long sheet metal support of the LED filament innovatively, meanwhile the sheet metal is inserted into a preformed transparent plastic model frame to produce a light source, and accordingly the automated continuous production of the LED lamp filament is implemented and the problem of the facing direction strength caused by the too thin and too long metal support is solved due to the transparent plastic model frame; meanwhile the lateral direction strength of the metal support is effectively utilized and accordingly the integral mechanical strength of the LED lamp filament is ensured; the heat dissipation characteristics of the metal is directly utilized, meanwhile the heat dissipation efficiency of the LED chip is maximized through the innovative encapsulation of thermal conductive coatings, and accordingly the problem of a heat dissipation bottleneck of the LED lamp filament is effectively solved, the LED lamp filament can work at the rated power for a long time, and the cost is reduced; the LED light extraction efficiency is improved, the light attenuation is reduced, the high lighting effect and ambient light of lamp filament light emission is implemented, and the market vacancy of the existing LED lamp filament is filled through innovative fluorescence encapsulation materials.

A solid-state element device having: a solid-state element having a pad electrode smaller than a contact electrode, the solid-state element being flip-mounted; a power receiving/supplying portion for receiving/supplying a power, the power receiving/supplying portion being bonded to the solid-state element such that an element mounting surface thereof is nearly flush with a mounting surface of the solid-state element; and an inorganic sealing portion for sealing the solid-state element formed of an inorganic sealing material and a thermal expansion coefficient equal to that of the power receiving/supplying portion. The inorganic sealing portion defines an air layer between the solid-state element and the power receiving/supplying portion.

The light-emitting apparatus comprises a substrate, a first semiconductor layer formed on the substrate, a light-emitting layer formed on the first semiconductor layer, a second semiconductor layer formed on the light-emitting layer, a first transparent conductive oxide layer formed on the second semiconductor layer, a reflective metal layer form on the transparent conductive oxide layer, and a first electrode formed on the reflective metal layer; characterized in that the first transparent conductive oxide layer is formed with a plurality of cavities on the interface between the first transparent conductive oxide layer and the reflective metal layer for improving the adhesion strength therebetween.

The invention provides a method which uses a graphic substrate to improve the illumination efficiency of a GaN-based efficiency, comprising the steps as follows: a silicon dioxide film is deposited on a sapphire substrate; a photoresist graphic array is optically etched; the photoresist graphic array is taken as a mask so as to etch the silicon dioxide film with the graphic structure; the silicon dioxide film with the graphic structure is taken as a mask so as to etch the sapphire substrate and the graphics is etched onto the sapphire substrate; the sapphire substrate is thoroughly cleaned so as to form a pyramid structure with triangular sections; a low-temperature nucleation layer grows on the graphic sapphire substrate; temperature is continuously increased on the low-temperature nucleation layer so as to grow an n-typed mixed GaN layer and an array structure which has low dislocation density and V-shaped holes on the surface; a multiple quantum well layer and a p-typed material layer required when the LED structure material grows continue to grow; furthermore, the final surface is led to still have the array structure with V-shaped holes.

The invention discloses an organic compound based on heteroaryl amine structure and application thereof to an OLED (Organic Light Emitting Diode). The compound structurally contains heteroaryl and benzo-heteroaryl amine structures at the same time, has relatively shallow LUMO energy stage, relatively high glass transition temperature and molecular thermal stability; the absorption in the visible light field is low; the refractive index is high; after the organic compound is applied to the CPL layer of the OLED device, the light extraction efficiency of the OLED device can be effectively improved.

The invention discloses a method for preparing a two-dimensional photonic crystal structure GaN (gallium nitride) based LED (light emitting diode). The method comprises: firstly, spinning a layer of ultraviolet optical resist on a target; copying the two-dimensional photonic crystal structure of a template to the surface of the optical resist by utilizing ultraviolet soft nanoimprinting, and etching to remove the residual resist; evaporating a layer of SiO2 or Cr film on a photonic crystal ultraviolet resist, thus a photonic crystal image is obtained on a target sheet through etching; and theobtained GaN is subjected to removing of photoresist, cleaning and drying, thus a photonic crystal target sheet is obtained, and carrying out subsequent process treatment on the obtained target sheet, thus the manufacturing of a device is finished, and the photonic crystal GaN based LED with high light extracting efficiency is obtained. Through the method provided by the invention, the selection ratio of etching can be improved, the duty ratio of the photonic crystal can be regulated in a certain range, the uneven problem of the surface of the LED chip can be overcome, the photonic crystal image can be prepared better through the nanoimprinting technology, and the method is suitable for the preparation of the GaN based photonic crystal LED in industrial production.