10697results about How to "Improve extraction efficiency" patented technology

A packaged light emitting device. The device has a substrate member comprising a surface region. The device has a substrate member comprising a surface region. The device also has two or more light emitting diode devices overlying the surface region according to a specific embodiment. At least a first of the light emitting diode device is fabricated on a semipolar GaN containing substrate and at least a second of the light emitting diode devices is fabricated on a nonpolar GaN containing substrate. In a preferred embodiment, the two or more light emitting diode devices emits substantially polarized emission. Of course, there can be other variations, modifications, and alternatives.

The present inventions is related to a superconducting or non-superconducting isochronous sector-focused cyclotron, comprising an electromagnet with an upper pole and a lower pole that constitute the magnetic circuit, the poles being made of at least three pair of sectors (3,4) called "hills" where the vertical gap between said sectors is small, these hill-sectors being separated by sector-formed spaces called "valleys" (5) where the vertical gap is large, said cyclotron being energized by at least one pair of main coils (6), characterised in that at least one pair of upper and lower hills is significantly longer than the remaining pair of hill sectors in order to have at least one pair of extended hill sectors (3) and at least one pair of non-extended hill sectors (4) in that a groove (7) or a "plateau" (7') which follows the shape of the extracted orbit is present in said pair of extended hill sectors (3) in order to produce a dip (200) in the magnetic field.

The present invention relates to a process for preparing a biomass, such as from a microbial fermentation, for an extraction process to separate desired chemicals, nutritional products, bioactive components, proteins, carbohydrates, and lipids, from the biomass. Particularly preferred substances to extract include docosahexaenoic acid, docosapentaenoic acid, and arachidonic acid. The present invention also includes extracting the prepared biomass. Biomasses to be treated in accordance with the methods of the invention include plant, animal, and microbial biomass, particularly a microorganism such as Crypthecodinium cohnii and a fungus such as Mortierella alpina.

The present invention generally relates to video and / or television projection systems, and more particularly, to LED based light source systems utilizing generally non-rotationally symmetric, preferably oblong or rectangular, non-imaging collection optics for providing improved projection systems relative to arc lamp and other LED based light source systems. The non-rotationally symmetric non-imaging collection optics are configured to operate with LEDs to provide preferred, generally, uniform light distributions whose étendues match those of downstream applications such as those encountered in projection systems. Also provided are various arrangements for coupling LED output to the entrance aperture of collection optics and for coupling the outputs from a plurality of collection optic outputs to form single beams of illumination of preferred patterns, intensities, and color.

The invention is a light emitting diode that exhibits high reflectivity to externally incident light and high extraction efficiency for internally generated light. The light emitting diode includes a first reflecting electrode that reflects both externally incident light and internally generated light. The first reflecting electrode can be a metal layer; or a transparent layer and a metal layer; or a transparent layer and a metal layer with a plurality of metal contacts extending from the reflecting metal layer through the transparent layer. A multi-layer semiconductor structure is in contact with the first reflecting layer and has an active region that emits the internally generated light in an emitting wavelength range. The multi-layer semiconductor structure has an absorption coefficient less than 50 cm−1. A second reflecting electrode underlies the multi-layer semiconductor structure and reflects both the externally incident light and the internally generated light. The second reflecting electrode can be a first transparent layer and a reflecting metal layer; or a second transparent layer, a first transparent layer and a reflecting metal layer; or a second transparent layer, a first transparent layer and a reflecting metal layer with a plurality of metal contacts extending from the reflecting metal layer through the first transparent layer to the second transparent layer. An array of light extracting elements extends at least part way through the multi-layer semiconductor structure and improves the extraction efficiency for the internally generated light.

A light emitting diode (LED) device is provided. The LED device includes a device substrate, a first doped layer of a first conductivity type, a light emitting layer, a second doped layer of a second conductivity type, a transparent conductive oxide layer, a reflecting layer and two electrodes. The first doped layer is deposited on the device substrate, the light emitting layer is deposited on a portion of the first doped layer, and the second doped layer is deposited on the light emitting layer. The first and the second doped layers are comprised of III-V semiconductor material respectively. The transparent conductive oxide layer is deposited on the second doped layer, and the reflecting layer is deposited on the transparent conductive oxide layer. The two electrodes are deposited on the reflecting layer and the first doped layer respectively.

There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer (passivation film) such as SiN provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. According to the present invention, a light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.

The invention discloses equipment and a method for extracting biologically active ingredients from subcritical fluid, aims to solve the problems of low extraction efficiency and the like existing in the aspects of biologically active ingredient separation technology in the prior art and provides a set of subcritical equipment which comprises an extracting agent supply system, an entrainer supply system, an extraction system, a separation system, a solvent recycling system, a desolvation system, a heat supply system, a computer control system and the like, has high automatic control degree and is used for extracting the biologically active ingredients. Simultaneously, the invention also provides a new technological method for extracting the biologically active ingredients by adopting a subcritical extraction process. The method has the advantage of relatively low cost on the conventional extraction of an organic solvent, and the equipment has the characteristics of no solvent residue, no pollution, high bioactivity and the like in a product obtained by supercritical CO2 extraction technology and has the advantages of low investment on production equipment, high production efficiency within unit time, low energy consumption, flexible operation, high degree of automation and the like.

A method for designing semiconductor light emitting devices is disclosed wherein the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active layer) to improve light extraction efficiency and increase total light output efficiency. Device designs are chosen to improve efficiency without resorting to excessive active area-yield loss due to shaping. As such, these designs are suitable for low-cost, high-volume manufacturing of semiconductor light-emitting devices with improved characteristics.

There are provided a method of manufacturing a nitride semiconductor light-emitting element in which a nitride semiconductor layer of a first conductivity type, an active layer, and a nitride semiconductor layer of a second conductivity type are stacked in this order, including the steps of forming unevenness at a surface of the nitride semiconductor layer of the first conductivity type, forming unevenness at a surface of the nitride semiconductor layer of the second conductivity type, and forming a first electrode on a side of the nitride semiconductor layer of the first conductivity type and a second electrode on a side of the nitride semiconductor layer of the second conductivity type such that the first and second electrodes are positioned to face each other with the active layer interposed therebetween, and the nitride semiconductor light-emitting element.

An integrated process for treating alkaline wash water effluent from nitroaromatic manufacture, principally containing nitro-hydroxy-aromatic compounds is described. The integrated process concentrates the alkaline wash water to recover chemicals and water prior to treating the concentrate through supercritical water oxidation. The supercritical water oxidation step consists of treating the concentrate in the presence of an oxygen source at conditions, which are supercritical for water to cause a substantial portion of the organic component of the concentrate to oxidize. The product effluent includes a gaseous component and a clean water component, and in the event that insoluble ash is formed, an ash component. The new integrated process results in reduced chemical and water consumption compared to existing processes. In addition, the treated wash water effluent can be recycled to process or directly discharged.

A light-emitting diode includes a substrate (110), a reflective layer (120), a second diffraction grating (130), a first semiconductor layer (142), an active layer (144), a second semiconductor layer (146), a transparent electrode layer (148), and a first diffraction grating (150), arranged in that order. The first diffraction grating and the second diffraction grating is composed of an array of parallel and equidistant grooves, and a inclined angle between the grooves of the first diffraction grating and the grooves of the second diffraction grating is equal to or more than 0° and equal to or less than 90°. One of the first semiconductor layer and the second semiconductor layer is an N-type semiconductor and the other thereof is a P-type semiconductor. The light-emitting diode has high light extraction efficiency and is easy to manufacture at a low cost.

A nitride-based semiconductor light-emitting device having an improved structure to enhance light extraction efficiency, and a method of manufacturing the same are provided. The method includes the operations of sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate; forming a plurality of masking dots on an upper surface of the p-clad layer; forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots; forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer; forming an n-electrode on the rough n-contact surface; and forming a p-electrode on the p-contact layer.

This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.