7292 results about "Dislocation" patented technology

Described herein are semiconductor structures comprising (i) a Si substrate; (ii) a buffer region formed directly over the Si substrate, wherein the buffer region comprises (a) a Ge layer having a threading dislocation density below about 105 cm−2; or (b) a Ge1-xSnx layer formed directly over the Si substrate and a Ge1-x-ySixSny layer formed over the Ge1-xSnx layer; and (iii) a plurality of III-V active blocks formed over the buffer region, wherein the first III-V active block formed over the buffer region is lattice matched or pseudomorphically strained to the buffer region. Further, methods for forming the semiconductor structures are provided and novel Ge1-x-ySixSny, alloys are provided that are lattice matched or pseudomorphically strained to Ge and have tunable band gaps ranging from about 0.80 eV to about 1.4O eV.

The present invention provides a wafer support tool for heat treatment easy in working and capable of realizing reduction in cost without generating damages or slip dislocations that would be otherwise caused by high temperature heat treatment and a heat treatment apparatus. The present invention is directed to a wafer support tool for heat treatment comprising: a plurality of wafer support members for supporting a wafer to be heat treated; and a support member holder for holding the wafer support members, wherein the wafer support members each has a contact portion with the wafer, at least one of the contact portions being movable relative to the support member holder.

Implantable occlusion devices that include one or more flanges extending from a tubular body are disclosed. The flange or flanges may assist in retention of the device within a vessel, cavity, appendage, etc. At least one flange on the occlusion device may include a concave surface proximate one end of a body. Because of the shape of the flange, e.g., its concavity, the occlusion device may resist dislocation due to e.g., the forces generated within the left atrial appendage during atrial filbrillation.

A process for forming a thick defect-free epitaxial layer is disclosed. The process may comprise forming a buffer layer and a sacrificial layer prior to forming the thick defect-free epitaxial layer. The sacrificial layer and the thick defect-free epitaxial layer may be formed of the same material and at the same process conditions.

Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

The present invention provides a delivery device for self-expanding stent. The delivery device includes pipe head, inner pipe, near end controller, medium pipe, texturing tube, external protection apparatus, at least one locked coil and at least one stayguy. The external protection apparatus is a tearable external protection apparatus or a flexible connects collar hold-down mechanism or a stayguy hold-down mechanism. The present invention has a plenty of following advantages: to locate the stent rotarily, to fix the expanded stent effectively, to reduce the valvular abrasion of artificial cardiac stent, to reduce the abrasion of stayguy, to avoid the dislocation of stayguy and so on.

The present invention provides a method of forming a strained semiconductor layer. The method comprises growing a strained first semiconductor layer, having a graded dopant profile, on a wafer, having a first lattice constant. The dopant imparts a second lattice constant to the first semiconductor layer. The method further comprises growing a strained boxed second semiconductor layer having the second lattice constant on the first semiconductor layer and growing a sacrificial third semiconductor layer having the first lattice constant on the second semiconductor layer. The method further comprises etch annealing the third and second semiconductor layer, wherein the third semiconductor layer is removed and the second semiconductor layer is relaxed. The method may further comprises growing a fourth semiconductor layer having the second lattice constant on the second semiconductor layer, wherein the fourth semiconductor layer is relaxed, and growing a strained fifth semiconductor layer having the first semiconductor lattice constant on the fourth semiconductor layer. The method controls the surface roughness of the semiconductor layers. The method also has the unexpected benefit of reducing dislocations in the semiconductor layers.

A cervical intervertebral prosthesis includes lower and upper anchoring plates with a prosthesis core arranged between them to create an articulated connection. The anchoring plates are designed to bear with their anchoring plate surfaces on adjacent vertebral bodies. At least one anchoring plate surface has a rib-like projection thereon which can be used to engage in the vertebral body with a form fit. In order to produce a corresponding recess in the vertebral body, an instrument having a handle, a stem, a head part and an excavating element that can be retracted into the head part may be used. This permits considerably improved securing of the cervical intervertebral prosthesis against unintended movement. The medullary canal running along the posterior margin of the vertebral column is in this way protected from damage.

The surgical device according to the invention comprises both means for per-operative measurement and for memorization of a plurality of positions of a given femoral prosthetic direction and means for per-operative comparison of these positions with the cone of mobility of the prosthesis to be implanted, the position of the axis of revolution of this cone being, during the implantation of the prosthesis, adjustable with respect to the zone of the pelvis where the implantation of an acetabulum of the prosthesis is provided. By using this device, the surgeon can easily and rapidly determine, in the course of the surgical operation, a preferential direction for implanting the prosthetic acetabulum in order to reduce the subsequent risks of dislocations of the implanted prosthesis.

A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.

An acetabular shell liner having a variable rim surface geometry, which improves range of motion of the femoral component within the liner and decreases the incidence of dislocation and subluxation, and methods of making and using the acetabular shell liner. Prosthetic devices, more particularly hip joint prostheses, containing the acetabular shell liner having a variable rim surface geometry are also provided.

A susceptor for use in a deposition apparatus includes a recess in which a wafer is received, and a stress-reducing bumper disposed along the side of the recess. The stress-reducing bumper is of material having ductility at a relatively high temperature. Therefore, when the wafer contacts the stress-reducing bumper, such as may occur due to thermal expansion of the wafer during processing, the force of the impact on the wafer is minimized by an elastic deformation of the stress-reducing bumper. As a result, defects, such as slip dislocations at the outer peripheral edge of the wafer, are prevented.

Devices, systems and methods are disclosed for repairing soft tissue. The surgical system allows for the creation of tissue repair by grasping, aligning and sewing or fixing tissue. For example, this system may be used for clipping together excessive capsular tissue and reducing the overall capsular volume. The deployment device includes a central grasping mechanism and an outer clip delivery system. The clip embodiments may be single or multi-component (penetration and locking base components) that penetrate tissue layers and deploy or lock to clip the tissue together. An example of the system is used to reduce the joint capsule tissue laxity and reduces the potential for subluxation or dislocation of the joint by either restricting inferior laxity (anterior or posterior) and resolving or eliminating pathologic anterior or posterior translation.

In accordance with the present invention, improved methods for reducing the dislocation density of nitride epitaxial films are provided. Specifically, an in-situ etch treatment is provided to preferentially etch the dislocations of the nitride epitaxial layer to prevent threading of the dislocations through the nitride epitaxial layer. Subsequent to etching of the dislocations, an epitaxial layer overgrowth is performed. In certain embodiments, the etching of the dislocations occurs simultaneously with growth of the epitaxial layer. In other embodiments, a dielectric mask is deposited within the etch pits formed at the dislocations prior to the epitaxial layer overgrowth.

A GaN substrate comprises a GaN single crystal substrate, an AlxGa1-xN intermediate layer (0<x<=1) epitaxially grown on the substrate, and an GaN epitaxial layer grown on the intermediate layer. The intermediate layer is made of AlGaN and this AlGaN grows over the entire surface of the substrate with contaminants thereon and high dislocation regions therein. Thus, the intermediate layer is normally grown on the substrate, and a growth surface of the intermediate layer can be made flat. Since the growth surface is flat, a growth surface of the GaN epitaxial layer epitaxially grown on the intermediate layer is also flat.

A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.

A knee prosthesis is provided that allows for increased flexion. The knee prosthesis includes (a) a femoral component adapted to fit on a distal end of the femur which includes a lateral condylar structure and a medial condylar structure and (b) an intermediate structure configured to cooperate with a femoral component of a knee prosthesis. The intermediate structure includes at least one surface for contacting the femoral component and a transition of a sagittal curvature of the at least one contact surface from a concave surface into a convex surface at the contact interface of the femoral component and the intermediate structure when the knee is flexed at approximately 120° to 140°. The knee prosthesis minimizes impingement on the femoral posterior cortex in deep flexion, increases the dislocation safety factor and allows for easier reengagement of the articular surface should the femoral component externally rotate off of the tibial plateau.

A single crystalline ternary nanostructure having the formula AxByOz, wherein x ranges from 0.25 to 24, and y ranges from 1.5 to 40, and wherein A and B are independently selected from the group consisting of Ag, Al, As, Au, B, Ba, Br, Ca, Cd, Ce, Cl, Cm, Co, Cr, Cs, Cu, Dy, Er, Eu, F, Fe, Ga, Gd, Ge, Hf, Ho, I, In, Ir, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Os, P, Pb, Pd, Pr, Pt, Rb, Re, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Tc, Te, Ti, Ti, Tm, U, V, W, Y, Yb, and Zn, wherein the nanostructure is at least 95% free of defects and / or dislocations.

There are provided a GaN field effect transistor (FET) exhibiting an excellent breakdown voltage owing to the high quality of GaN crystal in a region where the electric lines of force concentrate during operation of the same, and a method of manufacturing the same. The FET has a layer structure formed of a plurality of GaN epitaxial layers. A gate electrode and a source electrode are disposed on the surface of the layer structure, and a drain electrode is disposed on the reverse surface of the same. A region of the layer structure in which the electric lines of force concentrate during operation of the FET has a reduced dislocation density compared with the other regions in the layer structure. The GaN FET is manufactured by forming, on a crystal-growing substrate having a surface formed with a plane pattern of a material other than a GaN-based material in an identical design to a plane pattern of an electrode determining the region in which the electric lines of force concentrate, a plurality of GaN epitaxial layers, one upon another, by using the epitaxial lateral overgrowth technique, thereby forming a layer structure, and then forming operational electrodes on the surface of the layer structure.