1784 results about "Susceptor" patented technology

A chemical vapor deposition reactor including a wafer boat with a vertical stack of horizontally oriented susceptors serving as thermal plates and each having pins extending upward for suspending a wafer between a pair of susceptors. Reactant gas injector and exhaust apparatus are positioned to concentrate a forceful supply of reactant gas across each wafer at a speed in excess of 10 cm / sec. The pressure is held in the range of 0.1 to 5,000 mTorr. The forceful gas flow avoids gas depletion effects, thinning the boundary layer and resulting in faster delivery of reactants to substrate surfaces, resulting in surface rate reaction limited operation. A plurality of individually controllable heaters are spaced vertically around the sides of the boat. Temperature sensors monitor the temperature along the boat height and provide input to a controller for adjusting the heater drive to optimize the temperature uniformity.

In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.

Metal organic chemical vapor deposition equipment is metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, and includes a susceptor heating the substrate and having a holding surface for holding the substrate, and a flow channel for introducing the reactant gas to the substrate. The susceptor is rotatable with the holding surface kept facing an inner portion of the flow channel, and a height of the flow channel along a flow direction of the reactant gas is kept constant from a position to a position, and is monotonically decreased from the position to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness.

A susceptor at least a surface thereof being coated with SiC, includes a recess where an wafer is mounted, the recess having an round portion disposed on a lower portion of an outer circumferential portion of the recess, a ring-shaped SiC crystal growth surface portion provided within the round portion in a range of 0.05 mm or more and 0.3 mm or less defined from an outer circumference vertical portion of the recess and a contact portion, where the susceptor contacts with the wafer on the recess, having a surface roughness Ra in a range of 0.5 μm or more and 3 μm or less.

A processing apparatus includes a processing vessel; a susceptor installed in the processing vessel and having an electrostatic chuck for attracting and holding an object to be processed; lifter pins, elevatably installed with respect to the susceptor, for separating the object from the susceptor; and a jump-up detection device for detecting whether or not the object jumps up from the susceptor when the object is lifted up to be separated therefrom by the lifter pins, wherein the jump-up detection device has a discharge detection unit for detecting at least one of a discharge current and a discharge voltage generated between the object and the susceptor when the object is separated from the susceptor; and a judging unit for judging whether or not the object jumps up based on a detection result of the discharge detection unit.

A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.

An apparatus used for an epitaxial vapor growing arrangement and for detecting whether a wafer is properly seated within a susceptor contained therein. The apparatus includes a semiconductor laser element that generates a laser beam which irradiates the wafer's surface. The apparatus, further, includes a combination of a stop mechanism, a condenser lens and a photo diode, which detects the laser beam reflected from the wafer surface and an operation circuit, which determines the wafer's posture on the susceptor. During operation, the reflected laser beam focuses on a receiving surface of the photo diode through the condenser lens. The operation circuit then compares the output signal from the photo diode with a preset reference value for discriminating the slope of the wafer.

A method for positioning wafers in dual wafer transport, includes: simultaneously moving first and second wafers placed on first and second end-effectors to positions over lift pins protruding from first and second susceptors, respectively; and correcting the positions of the first and second wafers without moving any of the lift pins relative to the respective susceptors or without moving the lift pins relative to each other, wherein when the first and second wafers are moved to the respective positions, the distance between the first wafer and tips of the lift pins of the first susceptor is substantially smaller than the distance between the second wafer and tips of the lift pins of the second susceptor.

A method of depositing a silicon oxide film on a resist pattern or etched lines formed on a substrate by plasma enhanced atomic layer deposition (PEALD) includes: providing a substrate on which a resist pattern or etched lines are formed in a PEALD reactor; controlling a temperature of a susceptor on which the substrate is placed at less than 50° C. as a deposition temperature; introducing a silicon-containing precursor and an oxygen-supplying reactant to the PEALD reactor and applying RF power therein in a cycle, while the deposition temperature is controlled substantially or nearly at a constant temperature of less than 50° C., thereby depositing a silicon oxide atomic layer on the resist pattern or etched lines; and repeating the cycle multiple times substantially or nearly at the constant temperature to deposit a silicon oxide atomic film on the resist pattern or etched lines.

A susceptor of an apparatus for manufacturing a semiconductor device includes a first part having a first lift pin hole, a second part combined with the first part and forming a space with the first part, wherein the second part has a second lift pin hole corresponding to the first lift pin hole, a heater disposed in the space, wherein the heater has a third lift pin hole corresponding to the first and second lift pin holes, a lift pin tube inserted in the first, second and third lift pin holes, wherein the lift pin tube is combined with the first and second part thereby preventing air from going into the space, and a lift pin passing through the lift pin tube.

A plasma CVD apparatus includes: a cooling susceptor for placing a substrate thereon and serving as an electrode; and a shower plate for introducing gas toward the susceptor via multiple throughholes formed therein. The shower plate serves as an electrode and is disposed in parallel to the susceptor. The cooling susceptor is made of a ceramic material provided with a cooling fluid flow path for passing a cooling fluid therethrough.

A shower plate is adapted to be attached to the showerhead and includes a front surface adapted to face the susceptor; and a rear surface opposite to the front surface. The shower plate has multiple apertures each extending from the rear surface to the front surface for passing gas therethrough in this direction, and the shower plate has at least one quadrant section defined by radii, wherein the one quadrant section has an opening ratio of a total volume of openings of all the apertures distributed in the section to a total volume of the one quadrant section, which opening ratio is substantially smaller than an opening ratio of another quadrant section of the shower plate.

A plasma processing system has a susceptor, provided in a processing vessel, for supporting thereon a substrate. A process gas is supplied into the processing vessel to produce the plasma of the process gas. The susceptor has a dielectric film formed on a base, and a plurality of protrusions formed on the film. The protrusions of the susceptor are formed by thermal-spraying a ceramic onto the dielectric film via an aperture plate having a plurality of circular apertures.

Disclosed is a susceptor which achieves uniform temperature distribution of a wafer placed on the susceptor, and also disclosed is a substrate processing apparatus provided with the susceptor. An annular recess 12a is formed in an intermediate portion between the central portion and the peripheral portion of a wafer support surface of the susceptor 12. Due to the provision of the recess, the substrate heating effect by thermal radiation from the susceptor is suppressed in the intermediate portion. The geometrical dimension of the recess is determined taking the chamber internal pressure into consideration.

A semiconductor wafer support pin assembly. A susceptor has at least three support pins configured to raise a wafer above the top surface of the susceptor. Each support pin includes and upper pin and a lower pin, which lock together by means of a quick-release mechanism in the form of a bayonet mount. The upper pin is made of a non-metallic material, such as polybenzimidazole. The susceptor is driven up and down by a lifting mechanism, driven by an electric motor or pneumatic cylinder. The susceptor moves up and down, relative to the support pins.

A plasma CVD apparatus for forming a thin film on a substrate includes: a vacuum chamber; an upper electrode; a susceptor as a lower electrode; and a ring-shaped insulation plate disposed in a gap between the susceptor and an inner wall of the chamber in the vicinity of or in contact with the susceptor to minimize a floating potential charged on the substrate while processing the substrate.

A method for processing a substrate by plasma CVD includes: (i) forming a film on a substrate placed on a susceptor by applying RF power between the susceptor and a shower plate in the presence of a film-forming gas in a reactor; and (ii) upon completion of step (i), without unloading the substrate, applying amplitude-modulated RF power between the susceptor and the shower plate in the absence of a film-forming gas but in the presence of a non-film-forming gas to reduce a floating potential of the substrate.

A coated susceptor of electromagnetic energy for chemical processing made of a matrix material that surrounds a non-matrix material that is made from a material that is different from the matrix material, in which the matrix material is constructed of material having lower dielectric losses compared to the non-matrix material, the non-matrix material initially absorbs electromagnetic energy applied to the electromagnetic susceptor to a greater extent than the matrix material, the non-matrix material produces subsequent heat in the matrix material, and the surface of the susceptor is coated with a material that interacts with applied electromagnetic energy of at least one frequency and initially absorbs electromagnetic energy and produces heat.

The ceiling surface (12b) of a chamber (12) is substantially entirely formed with a gas supply port (19). Further, the gas supply port (19) has shower head (20) fitted therein. The peripheral edge of the ceiling surface (12b) has connected thereto a second side wall (12d) forming an angle greater than 90 degrees with ceiling surface (12b). Further, the side surface of a susceptor (16) is formed such that it forms an angle greater than 90 degrees with a mounting surface for a wafer (W) and is substantially parallel with the second side wall (12d) of the chamber (12). Further, the susceptor (16) is disposed such that the distance (L2) between its side surface and the second side wall (12d) is greater than the distance (L1) between the shower head (20) and the wafer (W).

A substrate processing apparatus includes a chamber, a susceptor to receive a substrate and provided in the chamber, a gas supply source to supply a predetermined gas into the chamber, and a high frequency power source to treat the substrate by plasma. The susceptor includes a first ceramics base member including a flow passage to let a coolant pass through, a first conductive layer formed on a principal surface and a side surface on a substrate receiving side of the first ceramics base member, and an electrostatic chuck stacked on the first conductive layer and configured to electrostatically attract the wafer received thereon. A volume of the flow passage is equal to or more than a volume of the first ceramics base member. The high frequency power source is configured to supply high frequency power to the first conductive layer.

An object of the invention is to calibrate an upper pyrometer for indirectly measuring a substrate temperature at the time of epitaxial growth in a comparatively short time and with accuracy to thereby improve the quality of an epitaxial substrate. After calibrating an upper pyrometer by a thermocouple mounted to a temperature calibrating susceptor, a measured value of a lower pyrometer is adjusted to a calibrated value of the upper pyrometer. Then, a correlation line between substrate temperature indirectly measured by the upper pyrometer at the time of epitaxial growth onto a sample substrate and haze of a sample substrate measured immediately after epitaxial growth is set to indirectly measure a substrate temperature by the upper pyrometer at the time of epitaxial growth onto a mass-production substrate. Moreover, substrate temperature at the time of epitaxial growth onto the mass-production substrate is estimated by applying the haze of the mass-production substrate measured immediately after epitaxial growth to the correlation line and then a measured temperature of the upper pyrometer is adjusted to the estimated temperature.

A method for manufacturing a susceptor includes: forming a concave pattern in a surface of a substrate to be processed; applying a SiC paste containing a SiC powder and a sintering agent to the surface of the substrate to be processed to fill the concave pattern to form a SiC coating layer; laminating a SiC substrate on the SiC coating layer; and firing the SiC coating layer to form a SiC layer having at least one convex section on the surface of the SiC substrate.

Provided is a susceptor 13 for manufacturing an epitaxial wafer, comprising a mesh-like groove 13b on a mount face on which a silicon substrate W is to be mounted, wherein a coating H of silicon carbide is formed on the mount face, and the coating has a surface roughness of 1 μm or more in centerline average roughness Ra and a maximum height of a protrusion 13p generated in forming the coating H of 5 μm or less. Thus, defects such as warping and slip as well as adhesion of the silicon substrate to the susceptor are prevented.