578results about How to "Light extraction efficiency" patented technology

The present invention relates to a vertical / horizontal light-emitting diode for a semiconductor. An exemplary embodiment of the present invention provides a semiconductor light-emitting diode comprising: a conductive substrate; a light-emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer sequentially formed over the conductive substrate; a second conductive electrode including a conductive via that passes through the first conductive semiconductor and active layers to be connected with the second conductive semiconductor layer therein, and an electrical connector that extends from the conductive via and is exposed outside the light-emitting structure; a passivation layer for covering a dielectric and at least the side surface of the active layer of the light-emitting structure, the dielectric serving to electrically isolate the second conductive electrode from the conductive substrate, the first conductive semiconductor layer and the active layer; and a surface relief structure formed on the pathway of light emitted from the active layer. According to the present invention, a semiconductor light-emitting diode exhibiting enhanced external light extraction efficiency, especially the diode's side light extraction efficiency, can be obtained.

Projections / depressions forming a two-dimensional periodic structure are formed in a surface of a semiconductor multilayer film opposing the principal surface thereof, while a metal electrode with a high reflectivity is formed on the other surface. By using the diffracting effect of the two-dimensional periodic structure, the efficiency of light extraction from the surface formed with the projections / depressions can be improved. By reflecting light emitted toward the metal electrode to the surface formed with the projections / depressions by using the metal electrode with the high reflectivity, the foregoing effect achieved by the two-dimensional periodic structure can be multiplied.

A light emitting device that can provide enhanced heat radiation as well as allowing light from a light emitting diode (LED) chip to be efficiently extracted out of the device. This light emitting device includes a metal plate (11) that is made of aluminum. The metal plate (11) has a projection (11a) projecting forward. The projection (11a) has a front side provided with a housing recess (11b). An LED chip (1) is mounted on the bottom of the housing recess (11b) so that it is thermally coupled to the metal plate (11), thus allowing heat to be radiated efficiently. A printed circuit board (12), having a grass epoxy substrate to be joined to the front surface of the metal plate (11), is provided with an insertion hole (13) into which the projection (11a) is inserted. The LED chip (1) and a bonding wire (W) are encapsulated in a transparent resin seal portion (50). The side wall of the housing recess (11b) that is part of the metal plate (11) functions as a reflector for reflecting forward light emitted from the LED chip (1). Thus, light from the LED chip (1) can be extracted efficiently.

A semiconductor sensor, solar cell or emitter or a precursor therefore having a substrate and textured semiconductor layer deposited onto the substrate. The layer can be textured as grown on the substrate or textured by replicating a textured substrate surface. The substrate or first layer is then a template for growing and texturing other semiconductor layers from the device. The textured layers are replicated to the surface from the substrate to enhance light extraction or light absorption. Multiple quantum wells, comprising several barrier and quantum well layers, are deposited as alternating textured layers. The texturing in the region of the quantum well layers greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. This is the case in nitride semiconductors grown along the polar [0001] or [000-1] directions.

An object of the prevent invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode.

A light emitting device includes a substrate, a light emitting element mounted on the substrate, a light transmissive member placed on an upper surface of the light emitting element, and a sealing member which seals the light emitting element and the light transmissive member. The light transmissive member is a plate-shaped member not containing a phosphor and is larger than the light emitting element when viewed from above. The sealing member includes a first sealing member which is formed of a light reflecting member for reflecting light emitted from the light emitting element and covers side surfaces of the light emitting element, and a second sealing member which contains a phosphor for converting the light emitted from the light emitting element into light having wavelength different from wavelength of the light emitted from the light emitting element and covers at least an upper surface of the light transmissive member.

Provided is a light-emitting apparatus which can improve the light extraction efficiency without adversely influencing a functional layer of a light-emitting device and which includes a substrate; a light-emitting device formed on the substrate, the light-emitting device including: a first electrode formed on the substrate; an insulating member covering a periphery of the first electrode; and a functional layer formed on an exposed portion of the first electrode and including an emission layer; and a second electrode formed on the functional layer and the insulating member, in which a periodic structure is formed on a surface of the insulating member opposite to a substrate side, and an optical waveguide is formed between a bottom portion of the periodic structure and the first electrode or between the bottom portion of the periodic structure and the substrate.

Disclosed is a semiconductor light-emitting device having improved light-extraction efficiency. Specifically disclosed is a semiconductor light-emitting device (1) comprising a semiconductor light-emitting element (10), a phosphor layer (11) which is so formed as to cover at least a part of the semiconductor light-emitting element (10), and an outer layer (12) which is so formed as to cover at least a part of the phosphor layer (11). The phosphor layer (11) contains a binder (17) and a phosphor (18) dispersed in the binder (17), and the outer layer (12) contains a porous material (19). Consequently, the semiconductor light-emitting device is improved in light-extraction efficiency.

An object of the prevent invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode.

A vertical GaN-based LED comprises an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having an irregular-surface structure which includes a first irregular-surface structure having irregularities formed at even intervals and a second irregular-surface structure having irregularities formed at uneven intervals, the second irregular-surface structure being formed on the first irregular-surface structure; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.