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Ink-jet recording head with piezoelectric device and method for manufacturing the same

InactiveUS6142615AIncrease in piezoelectric constantIncrease the driving voltagePiezoelectric/electrostrictive device manufacture/assemblyPiezoelectric/electrostrictive device material selectionPiezoelectric actuatorsPiezoelectric coefficient

A piezoelectric device for an ink jet print head that has a greater displacement at a low drive voltage. The ink-jet recording head includes a vibration plate, on which is mounted one or more piezoelectric devices that change the volumes of pressure chambers upon application of a voltage. The device is mounted at least on one face of a pressure chamber substrate that is to be filled with ink. Such piezoelectric device includes a second piezoelectric layer having a piezoelectric constant g of a constant value or higher; and a first piezoelectric layer having a dielectric constant of a specific value or higher. Since the piezoelectric constant d of the piezoelectric device correlates with the product of the largest piezoelectric constant g and the largest dielectric device of the piezoelectric devices, a piezoelectric constant d larger than in the conventional case, i.e., having a greater displacement, can be obtained.

Ink-jet recording head with piezoelectric device and method for manufacturing the same

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Owner:SEIKO EPSON CORP

Unconnected Motor, Drive Control Device Thereof, And Electric Power Steering Device Using Drive Control Device Of Unconnected Motor

InactiveUS20080067960A1Constant gainIncreased current consumptionMotor/generator/converter stoppersSynchronous motors startersElectric power steeringControl signal

A drive control device of an unconnected motor capable of resolving power shortage and increasing motor output without using a boost circuit, and an electric power steering device using the unconnected motor. The drive control device comprises an unconnected motor (12) having a rotor in which permanent magnets are allocated and a stator opposing the rotor, in which armature winding Lu to Lw of a plurality (N number) of phases are independently arranged, a pair of inverter circuits (34a, 34b) individually connected to both ends of each armature winding, and a drive control circuit (15) which drives the pair of inverter circuits (34a, 34b) with a predetermined number (e.g. 2N) of PWM drive control signals.

Unconnected Motor, Drive Control Device Thereof, And Electric Power Steering Device Using Drive Control Device Of Unconnected Motor

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Owner:NSK LTD

Light-emitting element, lighting device, and electronic appliance

ActiveUS20170012232A1Element characteristicIncrease the driving voltageMechanical apparatusDomestic lightingAlkaline earth metalEngineering

A tandem light-emitting element employing an inverted-structure is provided. The light-emitting element includes a cathode, a first EL layer over the cathode, a second EL layer over the first EL layer, an anode over the second EL layer, and an intermediate layer. The intermediate layer is between the first EL layer and the second EL layer. The intermediate layer includes a first layer, a second layer over the first layer, and a third layer over the second layer. The first layer includes a hole-transport material and an electron acceptor. The third layer includes an alkali metal or an alkaline earth metal. The second layer includes an electron-transport material.

Light-emitting element, lighting device, and electronic appliance

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Owner:SEMICON ENERGY LAB CO LTD

Fluorescent filtered electrophosphorescence

ActiveUS20060279203A1Stable color balanceImprove stabilityDischarge tube luminescnet screensElectroluminescent light sourcesOrganic light emitting devicePhosphorescence

The present invention relates to organic light emitting devices (OLEDs), and more specifically to OLEDS that emit light using a combination of fluorescent emitters and phosphorescent emitters for the efficient utilization of all of the electrically generated excitons.

Fluorescent filtered electrophosphorescence

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Owner:UNIV OF SOUTHERN CALIFORNIA +1

Light-emitting device of gallium nitride compound semiconductor

InactiveUSRE36747E1High luminous intensityReduce the driving voltageSemiconductor/solid-state device detailsSolid-state devicesLuminous intensityCharge carrier

A light-emitting diode of GaN compound semiconductor emits a blue light from a plane rather than dots for improved luminous intensity. This diode includes a first electrode associated with a high-carrier density n+ layer and a second electrode associated with a high-impurity density [iH-layer] H-layer. These electrodes are made up of a first Ni layer (110 ANGSTROM thick), a second Ni layer (1000 ANGSTROM thick), an Al layer (1500 ANGSTROM thick), a Ti layer (1000 ANGSTROM thick), and a third Ni layer (2500 ANGSTROM thick). The Ni layers of dual structure permit a buffer layer to be formed between them. This buffer layer prevents the Ni layer from peeling. The direct contact of the Ni layer with GaN lowers a drive voltage for light emission and increases luminous intensity.

Light-emitting device of gallium nitride compound semiconductor

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Owner:TOYODA GOSEI CO LTD +1

Light-emitting element having hole generating layer

ActiveUS7462883B2High voltageResist long-term useDischarge tube luminescnet screensElectroluminescent light sourcesDisplay deviceEngineering

The present invention provides a light-emitting element having a structure in which the drive voltage is comparatively low and a light-emitting element in which the increase in the drive voltage over time is small. Further, the present invention provides a display device in which the drive voltage and the increase in the drive voltage over time are small and which can resist long-term use. A layer in contact with an electrode in a light-emitting element is a layer containing a P-type semiconductor or a hole-generating layer such as an organic compound layer containing a material having electron-accepting properties. The light-emitting layer is sandwiched between the hole-generating layers, and an electron-generating layer is sandwiched between the light-emitting layer and the hole-generating layer on a cathode side.

Light-emitting element having hole generating layer

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Owner:SEMICON ENERGY LAB CO LTD

Organic electroluminescent elements

InactiveUS6344283B1Improve film propertiesImprove hole injection efficiencyDischarge tube luminescnet screensLayered productsArylOrganic electroluminescence

An organic EL device comprising a cathode, an anode, and at least one organic compound layer containing an organic compound represented by formula (I):where L0 is any one of o-, p-, and m-phenylene groups which have two, three or four rings and which have a substituent with the proviso that when L0 is a phenylene group having four rings, the phenylene group may have an unsubstituted or substituted aminophenyl group somewhere therein, and at least one of R01, R02, R03 and R04 is any one of the following groups:where R1, R12, R13, R14, R15, R16 and R17 are each a substituted or unsubstituted aryl group, and r1, r2, r3 and r4 are each an integer of 0 to 5 with the proviso that r1+r2+r3+r4>=1.

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Owner:FUTABA CORPORATION

Light emitting element and light emitting device using the same

ActiveUS7893427B2Increase the driving voltageImprove reliabilitySolid-state devicesSemiconductor/solid-state device manufacturingLight emitting deviceElectron

An object of the prevent invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode.

Light emitting element and light emitting device using the same

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Owner:SEMICON ENERGY LAB CO LTD

Internal voltage generator for semiconductor integrated circuit capable of compensating for change in voltage level

InactiveUS20070236278A1Shorten the timeIncrease the driving voltageDigital storageElectric variable regulationVoltage generatorVoltage reference

The internal voltage generator includes a level detector for comparing an internal voltage with a reference voltage to output a level detecting signal; a pump controller for outputting a pump enable signal in response to a mode signal and the level detecting signal; and a voltage pump for generating the internal voltage in response to the pump enable signal.

Internal voltage generator for semiconductor integrated circuit capable of compensating for change in voltage level

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Owner:SK HYNIX INC

OLED electron-transporting layer

InactiveUS20060269782A1Improved LEL/ETL interfaceLower potentialDischarge tube luminescnet screensElectroluminescent light sourcesDopantOrganic light emitting device

An organic light-emitting device (OLED) includes an anode, a cathode, and a light-emitting layer disposed between the anode and the cathode, wherein the light-emitting layer includes a dominant host and a dopant. The device also includes an electron-transporting layer disposed in direct contact with the light-emitting layer on the cathode side, wherein the electron-transporting layer includes an electron-transporting material having the same chromophore as that of the dominant host in the light-emitting layer, wherein the electron-transporting material constitutes more than 50% by volume of the electron-transporting layer, and wherein the electron-transporting material has a greater reduction potential than that of the dominant host in the light-emitting layer.

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Owner:EASTMAN KODAK CO

Light-emitting semiconductor device

ActiveUS7291865B2Inhibit interface reactionReduce the driving voltageSolid-state devicesSemiconductor/solid-state device manufacturingContact layerLight emitting device

A flip-chip type of Group III nitride based compound semiconductor light-emitting device comprises a transparent conductive film 10 made of ITO on a p-type contact layer. On the transparent conductive film, an insulation protection film 20, a reflection film 30 which is made of silver (Ag) and aluminum (Al) and reflects light to a sapphire substrate side, and a metal layer 40 made of gold (Au) are deposited in sequence. Because the insulation protection film 20 exists between the transparent conductive film 10 and the reflection film 30, metal atoms comprised in the reflection film 30 can be prevented from diffusing in the transparent conductive film 10. That enables the transparent conductive film 10 to maintain high transmissivity. As a result, a light-emitting device having high external quantum efficienty can be provided.

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Owner:TOYODA GOSEI CO LTD

Light emitting element and light emitting device using the same

ActiveUS20070114512A1Increase the driving voltageImprove reliabilitySolid-state devicesOrganic semiconductor devicesLight emitting deviceElectron

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Owner:SEMICON ENERGY LAB CO LTD

Gas dischargeable panel

InactiveUS20040032215A1Illumination efficiency is highImprove reflectivityAddress electrodesSustain/scan electrodesElectrode pairElectrical and Electronics engineering

A gas discharge panel includes a first substrate and a second substrate. A plurality of display electrode pairs which are each made up of a sustain electrode and a scan electrode are formed on the first substrate, and the first substrate and the second substrate are set facing each other with a plurality of barrier ribs in between so as to form a plurality of cells. In this gas discharge panel, at least one of the sustain electrode and the scan electrode includes: a plurality of line parts; and a discharge developing part which makes a gap between adjacent line parts smaller in areas corresponding to channels between adjacent barrier ribs than in areas corresponding to the barrier ribs.

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Owner:PANASONIC CORP

Liquid crystal display device and electronic apparatus

InactiveUS20100091231A1High quality displayIncrease the driving voltageNon-linear opticsLiquid-crystal displayElectron

Provided is a liquid crystal display device including: first and second substrates with a liquid crystal layer interposed therebetween; a first electrode formed on the liquid crystal layer side of the first substrate and having linear portions; a second electrode having linear portions formed along the linear portions of the first electrode and adjacent to the linear portions of the first electrode at a gap in plan view; and a third electrode formed on the liquid crystal layer side of the second substrate and having linear portions overlapping with the linear portions of the second electrode in plan view, wherein electric fields having different directions are generated between the first electrode and the second electrode and between the first electrode and the third electrode.

Liquid crystal display device and electronic apparatus

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Owner:JAPAN DISPLAY INC

Group iii nitride semiconductor laser device

InactiveUS20130051418A1Increases threshold current densityIncrease the driving voltageLaser detailsNanoopticsOptical cavityPower flow

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Owner:SUMITOMO ELECTRIC IND LTD

Semiconductor device

InactiveUS20120293201A1Reduce power consumptionIncrease the driving voltageSolid-state devicesDigital storagePower semiconductor deviceEngineering

An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.

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Owner:SEMICON ENERGY LAB CO LTD

Light emitting element

ActiveUS7737626B2Withstand long-term useReduce the driving voltageDischarge tube luminescnet screensElectroluminescent light sourcesSimple Organic CompoundsDisplay device

It is an object of the present invention to provide a light-emitting element having a structure in which the drive voltage is relatively low. Further, it is an object of the invention to provide a highly reliable light emitting device by alleviating the stress to the light emitting layer. Further, it is another object of the invention to provide a light emitting element having a structure in which increase in the drive voltage over time is small. It is an object of the present invention to provide a display device in which the drive voltage is low and increase in the drive voltage over time is small and which can withstand long-term use. In a light emitting element, a layer in contact with an electrode serves as a hole generating layer such as an organic compound layer containing a P-type semiconductor or an electron accepting material, a light emitting layer is provided between hole generating layers, an electron generating layer is formed between the hole generation layer on the cathode side and the light emitting layer.

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Owner:SEMICON ENERGY LAB CO LTD

Electrostatic micro switch, production method thereof, and apparatus provided with electrostatic micro switch

InactiveUS20060208328A1High resistivityLow resistivityElectrostatic/electro-adhesion relaysElectrothermal relaysHigh resistivityEngineering

An electrostatic micro switch includes a fixed electrode disposed on a fixed substrate; a movable substrate elastically supported by the fixed substrate, the movable substrate including a movable electrode facing the fixed electrode. The movable substrate includes a semiconductor including a plurality of regions having different values of resistivity and a region of high resistivity is disposed near the movable electrode.

Electrostatic micro switch, production method thereof, and apparatus provided with electrostatic micro switch

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Owner:ORMON CORP

Semiconductor integrated circuit and operation method thereof

ActiveUS20120133291A1Reduce voltage dropIncrease the output voltageElectrical apparatusElectroluminescent light sourcesDigital dataDriving current

A DC-DC converter supplies an output voltage to a plurality of channels of a light emitting device array in common. A current driver has a plurality of driver units which drive the channels. Each of the driver units includes a drive transistor and a detector which detects an abnormality of a drive current. A logic unit generates digital data in response to a plurality of detection signals and supplies the same to a D / A converter. An analog reference voltage of the D / A converter is supplied to the DC-DC converter. The logic unit executes a calibration operation which determines digital data for setting the minimum output DC voltage at the normal operation of all the channels by sequential updating of the digital data.

Semiconductor integrated circuit and operation method thereof

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Owner:RENESAS ELECTRONICS CORP

Back light unit having a plurality of luminous elements and control method thereof

ActiveUS7795821B2Increase the driving voltageReduce the driving voltageElectrical apparatusStatic indicating devicesBrightness perceptionVoltage

A back light unit (BLU) having a plurality of luminous elements, and a control method thereof is provided. The BLU includes a temperature detector to detect a temperature of the BLU, brightness detectors to detect a brightness of the plurality of luminous elements, a voltage supplier to supply a driving voltage to the plurality of luminous elements, respectively, and a controller to perform a first adjustment to adjust the driving voltage supplied to the plurality of luminous elements according to the temperature detected at the temperature detector, and to perform a second adjustment to adjust the driving voltage supplied to the plurality of luminous elements according to the brightness detected at the brightness detectors. Accordingly, the temperature of the BLU can be maintained stable, and the brightness can be controlled uniformly.

Back light unit having a plurality of luminous elements and control method thereof

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Owner:SAMSUNG ELECTRONICS CO LTD

Light emitting element and light emitting device and method of manufacturing light emitting element

InactiveUS20060243967A1Solve low luminous efficiencyIncrease layer thicknessSolid-state devicesSemiconductor/solid-state device manufacturingHigh concentrationSimple Organic Compounds

It is an object of the present invention to provide a light emitting element with high luminous efficiency, less defects, and low voltage, and a light emitting device having such a light emitting element. It is another object of the invention to provide a method of manufacturing such a light emitting element in simpler manner compared with a conventional manner. A light emitting element of the present invention includes a pair of electrodes, a layer containing a composite material, and a light emitting region; wherein the layer containing a composite material contains an organic compound and an inorganic compound; the light emitting region contains a material having a high light emitting property and a material having a high carrier transporting property, and a region containing high concentration of the material having a high light emitting property and a region containing high concentration of the material having a high carrier transporting property are alternately stacked in the light emitting region.

Light emitting element and light emitting device and method of manufacturing light emitting element

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Owner:SEMICON ENERGY LAB CO LTD

Compound for organic optoelectronic device, organic light emitting diode and display device

ActiveCN102558121AImprove overall lifespanImprove efficiencyOrganic chemistryElectroluminescent light sourcesDisplay deviceThermal stability

The present invention relates to a compound for an organic optoelectronic device, organic light emitting diode and display device. The compound for an organic optoelectronic device may be represented by the following Chemical Formulas 1 to 4 and have excellent electrochemical and thermal stability and thus, provide an organic photoelectric device with excellent life-span characteristics and high luminous efficiency at a low driving voltage. The above Chemical Formulas 1 to 4 are the same as described in the specification.

Compound for organic optoelectronic device, organic light emitting diode and display device

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Owner:CHEIL IND INC

Material for organic electroluminescent device

ActiveUS20140175384A1Short half-lifeDrive voltage highOrganic chemistryOrganic compound preparationArylHydrogen atom

The present invention discloses a novel material is represented by the following formula (A), the organic EL device employing the material as blue emitting layer can lower driving voltage, prolong half-lifetime and increase the efficiency.

Wherein m represent an integer of 0 to 4, R₁and R₂are identical or different. R₁and R₂are independently selected from the group consisting of a hydrogen atom, alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted aralkyl group having 6 to 30 carbon atoms. R₃and R₄are identical or different, R₃and R₄are independently selected from the group consisting of hydrogen atom, a halide, a substituted or unsubstituted arylamine, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms.

Material for organic electroluminescent device

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Owner:NINGBO LUMILAN NEW MATERIAL CO LTD

Transflective liquid crystal displays

InactiveUS20080143939A1Increase contrastIncrease the driving voltageNon-linear opticsLiquid-crystal displayReflective layer

A transflective liquid crystal display includes a first substrate, a second substrate, and liquid crystal intercalated between the first and second substrates in which each pixel includes a reflection area and a transmission area. The second substrate includes pixel electrodes and common electrodes to drive the liquid crystal. In the reflection area, a reflective layer is arranged between the pixel and common electrodes and the second substrate, and a polarizing layer is disposed between the pixel and common electrodes and the reflective layer.

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Owner:PANASONIC LIQUID CRYSTAL DISPLAY CO LTD +1

LED current control circuit, current balancer and driving apparatus

ActiveUS20110109231A1High driving voltageEnhanced efficiencyElectrical apparatusElectroluminescent light sourcesVoltageEngineering

An LED current control circuit including a current adjusting unit, a detecting unit, and a current control unit is provided. The current adjusting unit has a current control end coupled to an LED string for determining an amount of current flowing through the LED string according to a current control signal. The detecting unit detects the current control end and determines whether to generate a protecting signal according to a protecting voltage value. The current control unit generates the current control signal to control the amount of current flowing through the LED string of and determines whether to stop the current flowing through the LED string according to the protecting signal.