20167 results about "Halogen" patented technology

The triazinewherein Ar1, Ar2, Ar3, and Ar4 are each independently an aryl; R1 and R2 are substituents selected from the group consisting of hydrogen, an alkyl, an aryl, an alkoxy, a halogen atom, and a cyano; R3 and R4 are each a divalent group L selected from the group consisting of -C(R'R'')-, alkylene, an oxygen atom, a sulfur atom, and -Si(R'R'')-, wherein R' and R'' are selected from the group consisting of hydrogen, alkyl, alkoxy, and aryl.

Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O2, and / or a halogen-containing gas, such as NF3. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.

A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: adsorbing a precursor on a surface of a substrate; supplying a reactant gas over the surface; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least one halogen attached to silicon in its molecule.

An apparatus for removing volatile residues from a substrate is provided. In one embodiment, an apparatus for removing halogen-containing residues from a substrate includes a chamber suitable for operating maintaining a vacuum therein and a heat module positioned to heat a substrate disposed in the chamber. The apparatus for removing halogen-containing residues from a substrate also includes at least one of A) a temperature controlled pedestal having a projection extending radially therefrom suitable for supporting the temperature control pedestal on a ledge of the chamber body, the projection thermally isolating the base from the chamber body; B) a pair of substrate holders that include two support flanges extending radially inward from an inner edge of an arc-shaped body, each support flange having a substrate support step that includes a sloped landing; or C) a domed window.

A red phosphorescent compound, includes a host material being capable of transporting an electron or a hole; and a dopant material represented by following Formula 1:wherein each of R1 to R4 is selected from the group consisting of hydrogen atom (H), C1 to C6 alkyl and C1 to C6 alkoxy, and at least one of R1 to R4 is C1 to C6 alkyl, and wherein each of R5 to R7 is selected from the group consisting of hydrogen, C1 to C6 alkyl and halogen atom, and at least one of R5 to R7 is halogen atom, and wherein each of X and Y is selected from the group consisting of H, non-substituted C1 to C6 alkyl and C1 to C6 alkyl substituted by fluorine.

The present invention relates to a heterocyclic compound of the following general formula (I):wherein X is sulfur atom, oxygen atom or -NR3- (R3 may form a heterocyclic ring or a substituted heterocyclic ring with R1 via the nitrogen atom),R1 is alkyl group, substituted alkyl group, aryl group, substituted aryl group, heterocyclic group or substituted heterocyclic group, andR2 is hydrogen atom, halogen atom etc.;or its pharmaceutically acceptable salt and interferon inducers, antiviral agents, anticancer agents and therapeutic agents for immunologic diseases comprising the compound (I) or its pharmaceutically acceptable salt as active ingredients.

A method for forming a conformal, homogeneous dielectric film includes: forming a conformal dielectric film in trenches and / or holes of a substrate by cyclic deposition using a gas containing a silicon and a carbon, nitrogen, halogen, hydrogen, and / or oxygen, in the absence of a porogen gas; and heat-treating the conformal dielectric film and continuing the heat-treatment beyond a point where substantially all unwanted carbons are removed from the film and further continuing the heat-treatment to render substantially homogeneous film properties of a portion of the film deposited on side walls of the trenches and / or holes and a portion of the film deposited on top and bottom surfaces of the trenches and / or holes.

A process for the removal of a substance from a substrate for etching and / or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.

A carbon nanotube hybrid system includes: a carbide-derived carbon prepared by reacting a carbide compound and a halogen group containing gas to extract elements of the carbide compound except carbons; metals supported on the carbide-derived carbon or remaining in the carbide-derived carbon; and carbon sources from which carbon nanotubes are grown from the carbide-derived carbon. A method of preparing the carbon nanotube hybrid system includes preparing the carbide-derived carbon, extracting elements therefrom, and growing carbon nanotubes from the carbide-derived carbon. The carbon nanotube hybrid system has excellent uniformity and a long lifetime. An electron emitter having improved electron emitting properties can be inexpensively prepared using the carbon nanotube hybrid system compared to conventional carbon nanotubes. An electron emission device having excellent electron emitting properties can be prepared using the electron emitter.

A charge-transporting material contains a compound represented by the following formula (1) in an organic layer, in which the contents of specific halogen-containing compounds are 0.1% or less to the compound represented by formula (1). In formula (1), each of A1 and A2 independently represents N, —CH or —CR; R represents a substituent; L represents a single bond, an arylene group, a cycloalkylene group or an aromatic heterocyclic group; each of R1 to R5 independently represents a substituent; each of n1, n2 and n3 independently represents an integer of 0 to 4; each of n4 and n5 independently represents an integer of 0 to 5; and each of p and q independently represents an integer of 1 to 4.

Provided is an organic thin film light emitting element which has achieved all of improved luminous efficiency, improved driving voltage and improved durability life. Specifically provided is a light emitting element which comprises a hole transport layer and an electron transport layer between a positive electrode and a negative electrode and emits light by means of electrical energy. The light emitting element is characterized in that: the hole transport layer of the light emitting element contains a compound represented by general formula (1); the electron transport layer contains a donor compound; and the donor compound is an alkali metal, an inorganic salt containing an alkali metal, a complex of an alkali metal and an organic substance, an alkaline earth metal, an inorganic salt containing an alkaline earth metal, or a complex of an alkaline earth metal and an organic substance. (In the formula, R1-R20 each represents one group selected from the group consisting of hydrogen, deuterium, an alkyl group, a cycloalkyl group, an amino group, an aryl group, a heterocyclic group, a heteroaryl group, an alkenyl group, a cycloalkenyl group, an alkynyl group, analkoxy group, an alkylthio group, an arylether group, an arylthioether group, a halogen, a cyano group, a —P(═O)R24R25 group and a silyl group; R24 and R25 each represents an aryl group or a heteroaryl group; and these substituents may be further substituted, or adjacent two substituents may combine together to form a ring. Meanwhile, R21-R23 may be the same or different and each represents one group selected from the group consisting of an alkyl group, a cycloalkyl group, an aryl group and a heteroaryl group; and these substituents maybe further substituted.)

A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: supplying a precursor in a pulse to adsorb the precursor on a surface of a substrate; supplying a reactant gas in a pulse over the surface without overlapping the supply of the precursor; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least two halogens attached to silicon in its molecule.

Reactive halogen-ion plasmas, having for example, generating chloride ions, generated from low-pressure halogen gases using a radio-frequency plasma are employed for producing low-friction carbon coatings, such as a pure carbon film, at or near room temperature on a bulk or thin film of a compound, such as titanium carbide.

A method for forming a silicon-containing dielectric film on a substrate by atomic layer deposition (ALD) includes: providing two precursors, one precursor containing a halogen in its molecule, another precursor containing a silicon but no halogen in its molecule, adsorbing a first precursor, which is one of the two precursors onto a substrate to deposit a monolayer of the first precursor; adsorbing a second precursor, which is the other of the two precursors onto the monolayer of the first precursor to deposit a monolayer of the second precursor; and exposing the monolayer of the second precursor to radicals of a reactant to cause surface reaction with the radicals to form a compound monolayer of a silicon-containing film.

A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: adsorbing a precursor on a surface of a substrate; supplying a reactant gas over the surface; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least one halogen attached to silicon in its molecule.

The invention relates to the use of thionyl chloride and related materials for dry etching of internal surfaces of metalorganic vapour phase epitaxy (MOVPE) reactors to remove deposits. The method is also useful for the dry etching of process substrates within such reactors for cleaning and processing of those substrates. The invention may be particularly adaptable to chemical vapor deposition reactors used in the manufacture of high brightness LED's based on III-V semiconductors such as GaN and related materials. Features of the process include thermal, UV, and plasma activated dry cleaning, and the use of etchant gases such as COCl2, COBr2, COl2, SOl2, SOCl2, SOBr2, SO2Cl2, SO2Br2, NOCI, NOBr, NOl, S2Cl2, S2Br2, SCI2, SBr2, SOClBr, SOClF and SOFBr, either formed from neat materials or combinations of constituent gases such as CO, SO, SO2 or NO with halogens, to achieve the desired effect.

There is provided a technique including: (a) forming a thin film containing a predetermined element, oxygen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a source gas containing the predetermined element, carbon and a halogen element having a chemical bond between the predetermined element and carbon to the substrate; (a-2) supplying an oxidizing gas to the substrate; and (a-3) supplying a catalytic gas to the substrate; (b) removing a first impurity from the thin film by thermally processing the thin film at a first temperature higher than a temperature of the substrate in (a); and (c) removing a second impurity different from the first impurity from the thin film by thermally processing the thin film at a second temperature equal to or higher than the first temperature after performing (b).

An oxide or nitride film containing carbon and at least one of silicon and metal is formed by ALD conducting one or more process cycles, each process cycle including: feeding a first precursor in a pulse to adsorb the first precursor on a substrate; feeding a second precursor in a pulse to adsorb the second precursor on the substrate; and forming a monolayer constituting an oxide or nitride film containing carbon and at least one of silicon and metal on the substrate by undergoing ligand substitution reaction between first and second functional groups included in the first and second precursors adsorbed on the substrate. The ligand may be a halogen group, —NR2, or —OR.

An electroluminescent device comprised of an anode, a hole transporting layer, a light emitting layer, and a cathode, wherein said light emitting layer contains a component of the formula wherein Ar1, Ar2, Ar3, and Ar4 are each independently aryl or optionally aliphatic; R1 and R2 are independently selected from the group consisting of hydrogen, aliphatic, halogen, and cyano; L is a suitable linking group; and n is a number of from 0 to about 3.

Precursor materials useful for making organic electroluminescent devices such as anthracene derivatives having the structure: R40-R43 and R44-R47 are selected independently from the group consisting of hydrogen, alkyl, aryl, heteroalkyl, heteroaralkyl, nitro, cyano, hydroxy, alkoxy, aryloxy, thio, alkylthio, arylthio, amino, halogen, dialkylamino, diarylamino, diaralkylamino, arylamino, alkylamino, arylalkylamino, carbonyloxy, carbonylalkoxy, carbonylalkyloxy, alkylcarbonyloxy, arylcarbonyloxy, alkoxylcarbonyloxy, sulfonyl, sulfonyloxy. R48 and R49 are selected independently from the group consisting of trialkoxysilyl, dialkoxysilyl, trichlorosilyl, dichlorosilyl, heptachlorotrisiloxy, and pentachlorodisiloxy.

A method for forming a SiN or SiCN film in a trench on a substrate by plasma-enhanced atomic layer deposition (PEALD) conducts one or more process cycles, each process cycle including: (i) feeding a precursor in a pulse to a reaction space where the substrate is place, said precursor having a Si—N—Si bond in its skeletal structure to which at least one halogen group is attached; and (ii) applying RF power to the reaction space in the presence of a reactant gas and in the absence of any precursor to form a monolayer constituting a SiN or SiCN film.

Disclosed is an oxime ester compound represented by the following general formula (I). (In the formula, R1, R2 and R3 independently represent R11, OR11, COR11, SR11, CONR12R13 or CN; R11, R12 and R13 Independently represent a hydrogen atom, an alkyl group having 1-20 carbon atoms, an aryl group having 6-30 carbon atoms, an arylalkyl group having 7-30 carbon atoms or a heterocyclic group having 2-20 carbon atoms; R4 and R5 independently represent R11, OR11, SR11, COR11, CONR12R13, NR12COR11, OCOR11, COOR11, SCOR11, OCSR11, COSR11, CSOR11, CN, a halogen atom or a hydroxy group; and a and b independently represent a number of 0-3.)

A method of treating a coal combustion flue gas, which includes injecting a molecular halogen or thermolabile molecular halogen precursor, such as calcium hypochlorite, able to decompose to form molecular halogen at flue gas temperature. The molecular halogen converts elemental mercury to mercuric halide, which is adsorbable by alkaline solids such as subbituminous or lignite coal ash, alkali fused bituminous coal ash, and dry flue gas desulphurization solids, capturable in whole or part by electrostatic precipitators (ESPs), baghouses (BHs), and fabric filters (FFs), with or without subsequent adsorption by a liquid such as a flue gas desulphurization scrubbing liquor.

Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.

There is provided a method of manufacturing a semiconductor device, which includes: forming a first seed layer containing silicon and germanium on a substrate by performing, a predetermined number of times, a cycle which includes supplying a first process gas containing silicon or germanium and containing a halogen element to the substrate, supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing germanium and not containing a halogen element to the substrate; and forming a germanium-containing film on the first seed layer by supplying a fourth process gas containing germanium and not containing a halogen element to the substrate.

In some embodiments, a method for integrated circuit fabrication includes removing oxide material from a surface of a substrate, where the surface includes silicon and germanium. Removing the oxide material includes depositing a halogen-containing pre-clean material on a silicon oxide-containing surface and sublimating a portion of the halogen-containing pre-clean material to expose the silicon on the surface. A passivation film is deposited on the exposed silicon. The passivation film may include chlorine. The passivation film may prevent contamination of the silicon surface by chemical species from the later sublimation, which may be at a higher temperature than the earlier sublimation. Subsequently, a remaining portion of the halogen-containing pre-clean material and the passivation film are sublimated. A target material, such as a conductive material, may subsequently be deposited on the substrate surface.

A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: supplying a precursor in a pulse to adsorb the precursor on a surface of a substrate; supplying a reactant gas in a pulse over the surface without overlapping the supply of the precursor; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least two halogens attached to silicon in its molecule.

Dehydrohalogenation processes for the preparation of fluoropropenes from corresponding halopropanes, in which the fluoropropenes have the formula CF3CY═CXNHP, wherein X and Y are independently hydrogen or a halogen selected from fluorine, chlorine, bromine and iodine; and N and P are independently integers equal to 0, 1 or 2, provided that (N+P)=2.